JP5979739B2 - 炭化珪素単結晶の成長装置およびその方法 - Google Patents
炭化珪素単結晶の成長装置およびその方法 Download PDFInfo
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- JP5979739B2 JP5979739B2 JP2014518793A JP2014518793A JP5979739B2 JP 5979739 B2 JP5979739 B2 JP 5979739B2 JP 2014518793 A JP2014518793 A JP 2014518793A JP 2014518793 A JP2014518793 A JP 2014518793A JP 5979739 B2 JP5979739 B2 JP 5979739B2
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- Prior art keywords
- silicon carbide
- crucible
- single crystal
- carbide single
- growth apparatus
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- 239000013078 crystal Substances 0.000 title claims description 85
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 73
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 66
- 238000000034 method Methods 0.000 title description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 46
- 238000010438 heat treatment Methods 0.000 claims description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 229910002804 graphite Inorganic materials 0.000 claims description 19
- 239000010439 graphite Substances 0.000 claims description 19
- 239000012530 fluid Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 230000006698 induction Effects 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 239000000155 melt Substances 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 description 27
- 230000001965 increasing effect Effects 0.000 description 15
- 239000007770 graphite material Substances 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005092 sublimation method Methods 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000000815 Acheson method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/06—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using as solvent a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
30 (黒鉛材質の)ルツボ
32 炭化珪素種結晶
34 種結晶連結棒
38 突出段部
50 発熱体
90 翼状補助具
Claims (10)
- 所定の圧力状態の反応室と、
前記反応室の内部に設けられ、内部にシリコン(Si)または炭化珪素(SiC)粉末またはこれらの混合物が装入され、内側上部に炭化珪素が成長する炭化珪素種結晶および前記炭化珪素種結晶から延長して形成された種結晶連結棒を有する黒鉛材質のルツボと、
前記ルツボを加熱するための発熱体と、を含み、
前記ルツボの内部には、前記ルツボの内周面に沿って黒鉛材質の突出段部が、前記ルツボの上下方向に複数個設けられており、前記突出段部の少なくとも1つ以上が、前記SiまたはSiC粉末またはこれらの混合物である融液の液面よりも下側に設けられていることを特徴とする炭化珪素単結晶の成長装置。 - 前記突出段部の各々が、多数の突起または気孔を有する、請求項1に記載の炭化珪素単結晶の成長装置。
- 所定の方向に流体の流れを誘導するために前記突出段部の下部に設けられた黒鉛材質の翼状補助具をさらに含む、請求項1または2に記載の炭化珪素単結晶の成長装置。
- 前記突出段部の少なくとも一部がドーナツ状の形状を有することを特徴とする、請求項1または2に記載の炭化珪素単結晶の成長装置。
- 前記炭化珪素種結晶が、前記種結晶連結棒により前記ルツボに対して回転自在に設けられていることを特徴とする、請求項1または2に記載の炭化珪素単結晶の成長装置。
- 前記ルツボの下部に配置されて、前記ルツボを回転させるために設けられた回転支持体をさらに含む、請求項1または2に記載の炭化珪素単結晶の成長装置。
- 前記発熱体が、前記ルツボの外周面に配置されていることを特徴とする、請求項1または2に記載の炭化珪素単結晶の成長装置。
- 前記発熱体が、抵抗式発熱体または誘導加熱式発熱体であることを特徴とする、請求項7に記載の炭化珪素単結晶の成長装置。
- 前記発熱体によるルツボの内部における温度勾配が、上下方向に5℃/cm以上であることを特徴とする、請求項1または2に記載の炭化珪素単結晶の成長装置。
- 前記反応室の内部にアルゴンまたはヘリウムガスが充填されており、前記反応室の内部の真空度が0.3〜50kgf/cm2であることを特徴とする、請求項1または2に記載の炭化珪素単結晶の成長装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2011-0063669 | 2011-06-29 | ||
KR1020110063669A KR20130002616A (ko) | 2011-06-29 | 2011-06-29 | 탄화규소 단결정 성장 장치 및 그 방법 |
PCT/KR2012/005045 WO2013002539A2 (en) | 2011-06-29 | 2012-06-26 | Apparatus and method for growing silicon carbide single crystal |
Publications (2)
Publication Number | Publication Date |
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JP2014518194A JP2014518194A (ja) | 2014-07-28 |
JP5979739B2 true JP5979739B2 (ja) | 2016-08-31 |
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Application Number | Title | Priority Date | Filing Date |
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JP2014518793A Expired - Fee Related JP5979739B2 (ja) | 2011-06-29 | 2012-06-26 | 炭化珪素単結晶の成長装置およびその方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5979739B2 (ja) |
KR (1) | KR20130002616A (ja) |
WO (1) | WO2013002539A2 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5828810B2 (ja) * | 2012-07-18 | 2015-12-09 | 新日鐵住金株式会社 | 溶液成長法に用いられるSiC単結晶の製造装置、当該製造装置に用いられる坩堝及び当該製造装置を用いたSiC単結晶の製造方法 |
WO2014017648A1 (ja) * | 2012-07-27 | 2014-01-30 | 京セラ株式会社 | 坩堝、結晶成長装置および結晶成長方法 |
KR101636435B1 (ko) * | 2014-10-22 | 2016-07-06 | 한국세라믹기술원 | 다공성 흑연도가니 및 이를 이용한 탄화규소 단결정의 용액성장 제조방법 |
JP2017119594A (ja) * | 2015-12-28 | 2017-07-06 | 東洋炭素株式会社 | 単結晶SiCの製造方法及び収容容器 |
KR102049021B1 (ko) * | 2016-03-09 | 2019-11-26 | 주식회사 엘지화학 | 실리콘 카바이드 단결정 성장 장치 |
WO2017183747A1 (ko) * | 2016-04-21 | 2017-10-26 | 한국세라믹기술원 | 용액성장용 도가니 및 도가니 내의 용액성장 방법 |
KR102122739B1 (ko) * | 2017-12-19 | 2020-06-16 | 한국세라믹기술원 | 단결정 성장을 위하여 용액에 침잠되는 돌설부를 구비하는 도가니 |
DE102018129492B4 (de) | 2018-11-22 | 2022-04-28 | Ebner Industrieofenbau Gmbh | Vorrichtung und Verfahren zum Züchten von Kristallen |
KR102643619B1 (ko) * | 2019-06-28 | 2024-03-04 | 주식회사 엘지화학 | 단결정 성장 장치 |
CN111676519A (zh) * | 2020-08-05 | 2020-09-18 | 郑红军 | 碳化硅晶体熔体生长装置 |
CN113816382B (zh) * | 2021-11-17 | 2023-05-12 | 哈尔滨工业大学 | 一种高效低成本制备超长SiC纳米线的方法 |
CN114481317A (zh) * | 2022-01-27 | 2022-05-13 | 北京青禾晶元半导体科技有限责任公司 | 一种制造碳化硅晶体的装置及制造碳化硅晶体的方法 |
CN115467027B (zh) * | 2022-08-15 | 2024-02-06 | 上海汉虹精密机械有限公司 | 一种碳化硅炉腔内用导电结构 |
CN117230530B (zh) * | 2023-11-15 | 2024-01-30 | 常州臻晶半导体有限公司 | 一种晶体生长加热系统及其工作方法 |
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JPS5795893A (en) * | 1980-12-03 | 1982-06-14 | Fujitsu Ltd | Liquid phase epitaxially growing method |
US4866005A (en) * | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
JPH02221187A (ja) * | 1989-02-20 | 1990-09-04 | Sumitomo Electric Ind Ltd | 液相エピタキシャル成長方法 |
JP3893012B2 (ja) * | 1999-05-22 | 2007-03-14 | 独立行政法人科学技術振興機構 | Clbo単結晶の育成方法 |
JP4225296B2 (ja) * | 2005-06-20 | 2009-02-18 | トヨタ自動車株式会社 | 炭化珪素単結晶の製造方法 |
KR100749860B1 (ko) * | 2006-01-02 | 2007-08-21 | 학교법인 동의학원 | 단결정 성장 장치 및 단결정 성장 방법 |
JP2008037729A (ja) * | 2006-08-10 | 2008-02-21 | Shin Etsu Chem Co Ltd | 単結晶炭化珪素及びその製造方法 |
KR101028116B1 (ko) * | 2008-12-09 | 2011-04-08 | 한국전기연구원 | 다수의 탄화규소 단결정 성장을 위한 장치 |
JP5304600B2 (ja) * | 2009-11-09 | 2013-10-02 | トヨタ自動車株式会社 | SiC単結晶の製造装置及び製造方法 |
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2011
- 2011-06-29 KR KR1020110063669A patent/KR20130002616A/ko not_active Application Discontinuation
-
2012
- 2012-06-26 WO PCT/KR2012/005045 patent/WO2013002539A2/en active Application Filing
- 2012-06-26 JP JP2014518793A patent/JP5979739B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2014518194A (ja) | 2014-07-28 |
WO2013002539A3 (en) | 2013-03-14 |
KR20130002616A (ko) | 2013-01-08 |
WO2013002539A2 (en) | 2013-01-03 |
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