JP5956793B2 - 磁気抵抗効果素子、磁気ヘッドアセンブリ、磁気記録再生装置及び磁気メモリ - Google Patents

磁気抵抗効果素子、磁気ヘッドアセンブリ、磁気記録再生装置及び磁気メモリ Download PDF

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Publication number
JP5956793B2
JP5956793B2 JP2012061104A JP2012061104A JP5956793B2 JP 5956793 B2 JP5956793 B2 JP 5956793B2 JP 2012061104 A JP2012061104 A JP 2012061104A JP 2012061104 A JP2012061104 A JP 2012061104A JP 5956793 B2 JP5956793 B2 JP 5956793B2
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Japan
Prior art keywords
layer
magnetic
electrode
effect element
magnetoresistive effect
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JP2012061104A
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Japanese (ja)
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JP2013197205A (ja
JP2013197205A5 (https=
Inventor
慶彦 藤
慶彦 藤
通子 原
通子 原
福澤　英明
英明 福澤
湯浅　裕美
裕美 湯浅
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Toshiba Corp
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Toshiba Corp
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Priority to JP2012061104A priority Critical patent/JP5956793B2/ja
Priority to US13/728,281 priority patent/US8824108B2/en
Publication of JP2013197205A publication Critical patent/JP2013197205A/ja
Publication of JP2013197205A5 publication Critical patent/JP2013197205A5/ja
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/1274—Structure or manufacture of heads, e.g. inductive with "composite" cores, i.e. cores composed in some parts of magnetic particles and in some other parts of magnetic metal layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/398—Specially shaped layers
    • G11B5/3983—Specially shaped layers with current confined paths in the spacer layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
JP2012061104A 2012-03-16 2012-03-16 磁気抵抗効果素子、磁気ヘッドアセンブリ、磁気記録再生装置及び磁気メモリ Expired - Fee Related JP5956793B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012061104A JP5956793B2 (ja) 2012-03-16 2012-03-16 磁気抵抗効果素子、磁気ヘッドアセンブリ、磁気記録再生装置及び磁気メモリ
US13/728,281 US8824108B2 (en) 2012-03-16 2012-12-27 Magneto-resistance effect element, magnetic head assembly, magnetic recording and reproducing apparatus, and magnetic memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012061104A JP5956793B2 (ja) 2012-03-16 2012-03-16 磁気抵抗効果素子、磁気ヘッドアセンブリ、磁気記録再生装置及び磁気メモリ

Publications (3)

Publication Number Publication Date
JP2013197205A JP2013197205A (ja) 2013-09-30
JP2013197205A5 JP2013197205A5 (https=) 2015-04-09
JP5956793B2 true JP5956793B2 (ja) 2016-07-27

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Country Status (2)

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US (1) US8824108B2 (https=)
JP (1) JP5956793B2 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9368176B2 (en) * 2012-04-20 2016-06-14 Alexander Mikhailovich Shukh Scalable magnetoresistive element
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US9236564B2 (en) 2013-12-11 2016-01-12 Samsung Electronics Co., Ltd. Method and system for providing an engineered magnetic layer including Heusler layers and an amorphous insertion layer
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9269888B2 (en) * 2014-04-18 2016-02-23 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US10014013B2 (en) 2014-10-02 2018-07-03 Carnegie Mellon University L10-ordered MnAl thin films with high perpendicular magnetic anisotropy, and structures and devices made therewith
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
JP6097344B2 (ja) 2015-07-06 2017-03-15 株式会社東芝 磁気抵抗効果素子、磁気抵抗効果素子の製造方法、磁気ヘッド、および磁気記録再生装置
US9825216B2 (en) 2015-10-16 2017-11-21 Samsung Electronics Co., Ltd. Semiconductor memory device
JP6969751B2 (ja) * 2017-01-24 2021-11-24 国立大学法人東北大学 トンネル磁気抵抗素子及び磁化方向補正回路
JP6625083B2 (ja) 2017-03-21 2019-12-25 株式会社東芝 磁気センサ、生体細胞検出装置及び診断装置
JP6943019B2 (ja) 2017-05-26 2021-09-29 Tdk株式会社 磁気抵抗効果素子、磁気ヘッド、センサ、高周波フィルタ及び発振素子
JP2019054054A (ja) * 2017-09-13 2019-04-04 東芝メモリ株式会社 磁気装置
JP2020043134A (ja) * 2018-09-06 2020-03-19 キオクシア株式会社 磁気記憶装置
JP2020043224A (ja) * 2018-09-11 2020-03-19 キオクシア株式会社 磁気装置
JP6806939B1 (ja) 2019-08-08 2021-01-06 Tdk株式会社 磁気抵抗効果素子およびホイスラー合金
CN118632614A (zh) * 2019-12-17 2024-09-10 Tdk株式会社 磁阻效应元件
WO2023079762A1 (ja) 2021-11-08 2023-05-11 Tdk株式会社 磁気抵抗効果素子
JP2024049776A (ja) 2022-09-29 2024-04-10 Tdk株式会社 磁気抵抗効果素子
KR20240069458A (ko) * 2022-11-11 2024-05-20 삼성전자주식회사 반도체 소자 및 이를 포함하는 전자 장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3833512B2 (ja) 2000-10-20 2006-10-11 株式会社東芝 磁気抵抗効果素子
JP4198900B2 (ja) * 2001-07-19 2008-12-17 アルプス電気株式会社 交換結合膜及び前記交換結合膜を用いた磁気検出素子
JP4382333B2 (ja) 2002-03-28 2009-12-09 株式会社東芝 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置
WO2003092083A1 (fr) * 2002-04-24 2003-11-06 Matsushita Electric Industrial Co., Ltd. Element magnetoresistant
JP2009283499A (ja) * 2008-05-19 2009-12-03 Toshiba Corp 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置および磁気メモリ
JP5518896B2 (ja) * 2009-11-27 2014-06-11 株式会社東芝 磁気抵抗効果素子、及び磁気記録再生装置
JP5739685B2 (ja) 2011-02-14 2015-06-24 株式会社東芝 磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5356431B2 (ja) 2011-02-17 2013-12-04 株式会社東芝 磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録装置
JP5629608B2 (ja) 2011-02-25 2014-11-26 株式会社東芝 磁気抵抗効果素子、磁気ヘッドアセンブリ、磁気記録再生装置、メモリセルアレイ、及び磁気抵抗効果素子の製造方法

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US8824108B2 (en) 2014-09-02
US20130242435A1 (en) 2013-09-19

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