JP5950523B2 - 面発光レーザ、面発光レーザアレイ、画像形成装置 - Google Patents

面発光レーザ、面発光レーザアレイ、画像形成装置 Download PDF

Info

Publication number
JP5950523B2
JP5950523B2 JP2011199434A JP2011199434A JP5950523B2 JP 5950523 B2 JP5950523 B2 JP 5950523B2 JP 2011199434 A JP2011199434 A JP 2011199434A JP 2011199434 A JP2011199434 A JP 2011199434A JP 5950523 B2 JP5950523 B2 JP 5950523B2
Authority
JP
Japan
Prior art keywords
region
emitting laser
surface emitting
step structure
path length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011199434A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012104805A (ja
JP2012104805A5 (enrdf_load_stackoverflow
Inventor
光弘 井久田
光弘 井久田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2011199434A priority Critical patent/JP5950523B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to CN201180049069.8A priority patent/CN103168402B/zh
Priority to KR1020137011893A priority patent/KR101463704B1/ko
Priority to EP11782690.9A priority patent/EP2628219B1/en
Priority to PCT/JP2011/073467 priority patent/WO2012050146A1/en
Priority to US13/824,710 priority patent/US8897330B2/en
Priority to CN201510153386.4A priority patent/CN104767121B/zh
Publication of JP2012104805A publication Critical patent/JP2012104805A/ja
Priority to US14/519,609 priority patent/US9281660B2/en
Publication of JP2012104805A5 publication Critical patent/JP2012104805A5/ja
Application granted granted Critical
Publication of JP5950523B2 publication Critical patent/JP5950523B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
    • B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
    • B41J2/455—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using laser arrays, the laser array being smaller than the medium to be recorded
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
    • B41J2/47—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using the combination of scanning and modulation of light
    • B41J2/471—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using the combination of scanning and modulation of light using dot sequential main scanning by means of a light deflector, e.g. a rotating polygonal mirror
    • B41J2/473—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using the combination of scanning and modulation of light using dot sequential main scanning by means of a light deflector, e.g. a rotating polygonal mirror using multiple light beams, wavelengths or colours
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Facsimile Scanning Arrangements (AREA)
JP2011199434A 2010-10-16 2011-09-13 面発光レーザ、面発光レーザアレイ、画像形成装置 Active JP5950523B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2011199434A JP5950523B2 (ja) 2010-10-16 2011-09-13 面発光レーザ、面発光レーザアレイ、画像形成装置
KR1020137011893A KR101463704B1 (ko) 2010-10-16 2011-10-05 면 발광 레이저, 면 발광 레이저 어레이, 및 화상 형성 장치
EP11782690.9A EP2628219B1 (en) 2010-10-16 2011-10-05 Surface emitting laser, surface-emitting-laser array, and image forming apparatus
PCT/JP2011/073467 WO2012050146A1 (en) 2010-10-16 2011-10-05 Surface emitting laser, surface-emitting-laser array, and image forming apparatus
CN201180049069.8A CN103168402B (zh) 2010-10-16 2011-10-05 表面发射激光器、表面发射激光器阵列和图像形成装置
US13/824,710 US8897330B2 (en) 2010-10-16 2011-10-05 Surface emitting laser, surface-emitting-laser array, and image forming apparatus
CN201510153386.4A CN104767121B (zh) 2010-10-16 2011-10-05 表面发射激光器、表面发射激光器阵列和图像形成装置
US14/519,609 US9281660B2 (en) 2010-10-16 2014-10-21 Surface emitting laser, surface-emitting-laser array, and image forming apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010233164 2010-10-16
JP2010233164 2010-10-16
JP2011199434A JP5950523B2 (ja) 2010-10-16 2011-09-13 面発光レーザ、面発光レーザアレイ、画像形成装置

Publications (3)

Publication Number Publication Date
JP2012104805A JP2012104805A (ja) 2012-05-31
JP2012104805A5 JP2012104805A5 (enrdf_load_stackoverflow) 2015-07-09
JP5950523B2 true JP5950523B2 (ja) 2016-07-13

Family

ID=44983687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011199434A Active JP5950523B2 (ja) 2010-10-16 2011-09-13 面発光レーザ、面発光レーザアレイ、画像形成装置

Country Status (6)

Country Link
US (2) US8897330B2 (enrdf_load_stackoverflow)
EP (1) EP2628219B1 (enrdf_load_stackoverflow)
JP (1) JP5950523B2 (enrdf_load_stackoverflow)
KR (1) KR101463704B1 (enrdf_load_stackoverflow)
CN (2) CN103168402B (enrdf_load_stackoverflow)
WO (1) WO2012050146A1 (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5950523B2 (ja) * 2010-10-16 2016-07-13 キヤノン株式会社 面発光レーザ、面発光レーザアレイ、画像形成装置
CN104078844A (zh) * 2013-03-29 2014-10-01 新科实业有限公司 具有窄激光发射角度的多模垂直腔面发射激光器
WO2016048268A1 (en) * 2014-09-22 2016-03-31 Hewlett Packard Enterprise Development Lp Single mode vertical-cavity surface-emitting laser
US10447011B2 (en) 2014-09-22 2019-10-15 Hewlett Packard Enterprise Development Lp Single mode vertical-cavity surface-emitting laser
JP2018527755A (ja) * 2015-09-16 2018-09-20 ホアウェイ・テクノロジーズ・カンパニー・リミテッド 半導体レーザおよび半導体レーザの加工方法
JP6918540B2 (ja) * 2017-03-27 2021-08-11 スタンレー電気株式会社 発光装置
FR3078834B1 (fr) * 2018-03-08 2020-03-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif d’emission lumineuse comportant au moins un vcsel et une lentille de diffusion
US10892601B2 (en) * 2018-05-24 2021-01-12 Stanley Electric Co., Ltd. Vertical cavity light-emitting element
TWI805824B (zh) * 2018-08-13 2023-06-21 新加坡商Ａｍｓ傳感器亞洲私人有限公司 低發散垂直空腔表面發射雷射及結合其之模組及主裝置
JP7288360B2 (ja) * 2019-07-01 2023-06-07 スタンレー電気株式会社 垂直共振器型発光素子
US12362541B2 (en) * 2021-04-30 2025-07-15 Lumentum Operations Llc Methods for incorporating a control structure within a vertical cavity surface emitting laser device cavity
WO2023162488A1 (ja) * 2022-02-25 2023-08-31 ソニーグループ株式会社 面発光レーザ、光源装置及び測距装置

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5727014A (en) * 1995-10-31 1998-03-10 Hewlett-Packard Company Vertical-cavity surface-emitting laser generating light with a defined direction of polarization
JP3697903B2 (ja) 1998-07-06 2005-09-21 富士ゼロックス株式会社 面発光レーザおよび面発光レーザアレイ
JP2001284722A (ja) 2000-03-29 2001-10-12 Seiko Epson Corp 面発光型半導体レーザおよびその製造方法
JP2003115634A (ja) * 2001-08-02 2003-04-18 Furukawa Electric Co Ltd:The 面発光レーザ素子
JP3729263B2 (ja) * 2002-09-25 2005-12-21 セイコーエプソン株式会社 面発光型半導体レーザおよびその製造方法、光モジュール、光伝達装置
JP2006019470A (ja) 2004-07-01 2006-01-19 Sony Corp 面発光半導体レーザおよび光モジュール
JP4919639B2 (ja) * 2004-10-13 2012-04-18 株式会社リコー 面発光レーザ素子および面発光レーザアレイおよび面発光レーザ素子の製造方法および面発光レーザモジュールおよび電子写真システムおよび光通信システムおよび光インターコネクションシステム
US7693203B2 (en) * 2004-11-29 2010-04-06 Alight Photonics Aps Single-mode photonic-crystal VCSELs
JP2006210429A (ja) 2005-01-25 2006-08-10 Sony Corp 面発光型半導体レーザ
JP5376104B2 (ja) * 2005-07-04 2013-12-25 ソニー株式会社 面発光型半導体レーザ
JP2007093770A (ja) * 2005-09-27 2007-04-12 Canon Inc 走査光学装置及びそれを用いた画像形成装置
JP4878322B2 (ja) * 2007-03-29 2012-02-15 古河電気工業株式会社 面発光レーザ素子および面発光レーザ素子の製造方法
JP4350774B2 (ja) 2007-07-31 2009-10-21 キヤノン株式会社 面発光レーザ
CN102664348B (zh) * 2007-11-14 2014-12-31 株式会社理光 表面发射激光器及阵列、光学扫描装置、成像设备、光学传输模块和系统
US8077752B2 (en) 2008-01-10 2011-12-13 Sony Corporation Vertical cavity surface emitting laser
JP4639249B2 (ja) 2008-07-31 2011-02-23 キヤノン株式会社 面発光レーザの製造方法及び面発光レーザアレイの製造方法、面発光レーザ及び面発光レーザアレイ、面発光レーザアレイを備えている光学機器
JP5279393B2 (ja) 2008-07-31 2013-09-04 キヤノン株式会社 面発光レーザおよびその製造方法、面発光レーザアレイの製造方法、および面発光レーザアレイを備えている光学機器
JP5038371B2 (ja) * 2008-09-26 2012-10-03 キヤノン株式会社 面発光レーザの製造方法
JP5261754B2 (ja) * 2008-11-27 2013-08-14 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JP5434201B2 (ja) 2009-03-23 2014-03-05 ソニー株式会社 半導体レーザ
JP5313005B2 (ja) 2009-03-30 2013-10-09 株式会社ビデオリサーチ 調査システム及び調査方法
JP5515767B2 (ja) 2009-05-28 2014-06-11 株式会社リコー 面発光レーザ素子の製造方法、面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JP5510899B2 (ja) * 2009-09-18 2014-06-04 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置、及び画像形成装置
JP2011199434A (ja) 2010-03-17 2011-10-06 Konica Minolta Business Technologies Inc 画像処理装置、同装置による画像処理方法及び画像処理プログラム
JP5585940B2 (ja) 2010-04-22 2014-09-10 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び面発光レーザ素子の製造方法
JP2012009727A (ja) * 2010-06-28 2012-01-12 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
JP5950523B2 (ja) * 2010-10-16 2016-07-13 キヤノン株式会社 面発光レーザ、面発光レーザアレイ、画像形成装置

Also Published As

Publication number Publication date
US20130177336A1 (en) 2013-07-11
EP2628219B1 (en) 2017-01-25
WO2012050146A1 (en) 2012-04-19
CN103168402B (zh) 2015-04-15
CN104767121B (zh) 2018-05-08
KR20130063034A (ko) 2013-06-13
JP2012104805A (ja) 2012-05-31
KR101463704B1 (ko) 2014-11-19
US8897330B2 (en) 2014-11-25
EP2628219A1 (en) 2013-08-21
CN103168402A (zh) 2013-06-19
US20150036711A1 (en) 2015-02-05
CN104767121A (zh) 2015-07-08
US9281660B2 (en) 2016-03-08

Similar Documents

Publication Publication Date Title
JP5950523B2 (ja) 面発光レーザ、面発光レーザアレイ、画像形成装置
JP5058939B2 (ja) 面発光レーザ、該面発光レーザによって構成される光学機器
JP4974981B2 (ja) 垂直共振器型面発光レーザ素子、及び該垂直共振器型面発光レーザ素子を用いた画像形成装置
US9042421B2 (en) Surface emitting laser, surface emitting laser array, and optical apparatus having surface emitting laser array
US20060245464A1 (en) Vertical cavity surface emitting laser device
US8900902B2 (en) Process for producing surface-emitting laser and process for producing surface-emitting laser array
JP4117499B2 (ja) 面発光型半導体レーザ
JP2010040605A (ja) 面発光レーザおよびその製造方法、面発光レーザアレイ、面発光レーザアレイの製造方法、および面発光レーザアレイを備えている光学機器
JP2009188155A (ja) 垂直共振器型面発光レーザの製造方法とレーザアレイの製造方法、垂直共振器型面発光レーザとレーザアレイ、及びそれらを備えている画像形成装置
JP5279392B2 (ja) 面発光レーザおよびその製造方法、面発光レーザアレイの製造方法、および面発光レーザアレイを備えている光学機器
US9929538B2 (en) Surface emitting laser and image forming apparatus
US6833958B2 (en) Optical cavities for optical devices
US8625649B2 (en) Surface emitting laser and image forming apparatus
JP5743520B2 (ja) 面発光レーザ及び画像形成装置
JP2013157473A (ja) 面発光レーザ
JP2014127511A (ja) 面発光レーザ素子及びその製造方法、面発光レーザアレイ、光走査装置、及び画像形成装置
JP5087320B2 (ja) 光走査装置及び画像形成装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140916

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150520

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150915

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160510

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160607

R151 Written notification of patent or utility model registration

Ref document number: 5950523

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151