JP5949935B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 118
- 239000011347 resin Substances 0.000 claims description 68
- 229920005989 resin Polymers 0.000 claims description 68
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 230000005855 radiation Effects 0.000 claims description 16
- 238000009413 insulation Methods 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000001721 transfer moulding Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Description
図1は、本発明の実施の形態1に係る半導体装置の断面図である。半導体装置10は、例えばIGBTで形成された半導体素子12を備えている。半導体素子12は上面と下面を有している。上面にはゲート12aとエミッタ12bが形成されている。下面にはコレクタ12cが形成されている。
本発明の実施の形態2に係る半導体装置は、実施の形態1に係る半導体装置と一致する点が多いので、実施の形態1に係る半導体装置との相違点を中心に説明する。図3は、本発明の実施の形態2に係る半導体装置の断面図である。この半導体装置は、半導体素子12の直上部でシールド板24が樹脂40から外部へ露出することを特徴とする。なお、図3以降の断面図では制御基板は省略する。
本発明の実施の形態3に係る半導体装置は、実施の形態2に係る半導体装置と一致する点が多いので、実施の形態2に係る半導体装置との相違点を中心に説明する。図5は、本発明の実施の形態3に係る半導体装置の断面図である。この半導体装置は、シールド板24のうち樹脂40から外部へ露出する部分に凸部24bを形成したことを特徴とする。
本発明の実施の形態4に係る半導体装置は、実施の形態1に係る半導体装置と一致する点が多いので、実施の形態1に係る半導体装置との相違点を中心に説明する。図7は、本発明の実施の形態4に係る半導体装置の断面図である。この半導体装置は、シールド板50で半導体素子の側面を囲むことを特徴とする。
本発明の実施の形態5に係る半導体装置は、実施の形態1に係る半導体装置と一致する点が多いので、実施の形態1に係る半導体装置との相違点を中心に説明する。図10は、本発明の実施の形態5に係る半導体装置の断面図である。この半導体装置は、金属板70で半導体素子12の側面を囲むことを特徴とする。
本発明の実施の形態6に係る半導体装置は、実施の形態4に係る半導体装置と一致する点が多いので、実施の形態4に係る半導体装置との相違点を中心に説明する。図13は、本発明の実施の形態6に係る半導体装置の断面図である。この半導体装置は、シールド板90を、導電性金属を添加した樹脂で形成したことを特徴とする。
Claims (8)
- 上面と下面を有する半導体素子と、
前記下面に熱接続された金属板と、
前記上面にはんだ付けされた上面電極と、
前記上面電極の上に、前記上面電極と面接触するように形成された絶縁シートと、
前記絶縁シートの上に前記絶縁シートと面接触するように形成され、放射ノイズを遮蔽するシールド板と、
前記上面電極の一部、前記シールド板の一部、及び前記金属板の下面を外部に露出させつつ前記半導体素子を覆う樹脂と、
前記シールド板の上方に位置するように前記樹脂に固定された制御基板と、を備え、
前記絶縁シートの熱伝導率は前記樹脂の熱伝導率よりも高いことを特徴とする半導体装置。 - 前記シールド板は、前記半導体素子の直上部で前記樹脂から外部へ露出することを特徴とする請求項1に記載の半導体装置。
- 前記シールド板のうち前記樹脂から外部へ露出する部分には凸部が形成されたことを特徴とする請求項1又は2に記載の半導体装置。
- 上面と下面を有する半導体素子と、
前記下面に熱接続された金属板と、
前記上面にはんだ付けされた上面電極と、
前記上面電極の上に、前記上面電極と面接触するように形成された絶縁シートと、
前記絶縁シートの上に前記絶縁シートと面接触するように形成され、放射ノイズを遮蔽するシールド板と、
前記上面電極の一部、前記シールド板の一部、及び前記金属板の下面を外部に露出させつつ前記半導体素子を覆う樹脂と、を備え、
前記絶縁シートの熱伝導率は前記樹脂の熱伝導率よりも高く、
前記シールド板は、
前記絶縁シートと接する天板部分と、
前記天板部分と接続され、前記半導体素子の側面を囲み、前記上面電極を通すための空隙を有する第1包囲部分と、を備えたことを特徴とする半導体装置。 - 上面と下面を有する半導体素子と、
前記下面に熱接続された金属板と、
前記上面にはんだ付けされた上面電極と、
前記上面電極の上に、前記上面電極と面接触するように形成された絶縁シートと、
前記絶縁シートの上に前記絶縁シートと面接触するように形成され、放射ノイズを遮蔽するシールド板と、
前記上面電極の一部、前記シールド板の一部、及び前記金属板の下面を外部に露出させつつ前記半導体素子を覆う樹脂と、を備え、
前記絶縁シートの熱伝導率は前記樹脂の熱伝導率よりも高く、
前記金属板は、
下面が前記樹脂の外に露出する底板部分と、
前記底板部分と接続され、前記半導体素子の側面を囲み、前記上面電極を通すための空隙を有する第2包囲部分と、を備え、
前記シールド板の前記絶縁シートに面接触する面は前記第2包囲部分の上面と接することを特徴とする半導体装置。 - 前記シールド板は、導電性金属を添加した樹脂で形成されたことを特徴とする請求項1乃至5のいずれか1項に記載の半導体装置。
- 前記制御基板のグランド端子と前記シールド板を電気的に接続したことを特徴とする請求項1〜3のいずれか1項に記載の半導体装置。
- 前記シールド板は前記樹脂の側面から外部に露出することを特徴とする請求項1〜7のいずれか1項に記載の半導体装置。
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PCT/JP2012/077626 WO2014064806A1 (ja) | 2012-10-25 | 2012-10-25 | 半導体装置 |
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JP5949935B2 true JP5949935B2 (ja) | 2016-07-13 |
JPWO2014064806A1 JPWO2014064806A1 (ja) | 2016-09-05 |
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JP (1) | JP5949935B2 (ja) |
CN (1) | CN104756248B (ja) |
DE (1) | DE112012007051B4 (ja) |
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JP7270024B2 (ja) | 2018-07-12 | 2023-05-09 | ギャズトランスポルト エ テクニギャズ | 液化ガス移送システム |
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JP6577374B2 (ja) * | 2016-01-19 | 2019-09-18 | 三菱電機株式会社 | 半導体装置 |
JP2021061263A (ja) * | 2018-02-07 | 2021-04-15 | 株式会社東芝 | 半導体ユニット及び半導体装置 |
JP6922002B2 (ja) * | 2018-02-07 | 2021-08-18 | 株式会社東芝 | 半導体装置 |
JP2021082617A (ja) * | 2018-03-12 | 2021-05-27 | 株式会社東芝 | 半導体装置 |
WO2021019613A1 (ja) * | 2019-07-26 | 2021-02-04 | 株式会社 東芝 | 半導体ユニット及び半導体装置 |
JP7280208B2 (ja) * | 2020-01-22 | 2023-05-23 | 日立Astemo株式会社 | 電子制御装置 |
EP3872851A1 (en) * | 2020-02-27 | 2021-09-01 | Infineon Technologies Austria AG | Protector cap for package with thermal interface material |
JP2022099475A (ja) * | 2020-12-23 | 2022-07-05 | 株式会社オートネットワーク技術研究所 | 回路構成体 |
JP2022099476A (ja) * | 2020-12-23 | 2022-07-05 | 株式会社オートネットワーク技術研究所 | 回路構成体 |
DE102022205466B3 (de) | 2022-05-31 | 2023-10-26 | Volkswagen Aktiengesellschaft | Leistungsmodul und Baugruppe |
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DE112012007051T5 (de) | 2015-08-06 |
CN104756248A (zh) | 2015-07-01 |
DE112012007051B4 (de) | 2020-06-10 |
CN104756248B (zh) | 2017-09-22 |
JPWO2014064806A1 (ja) | 2016-09-05 |
US9601408B2 (en) | 2017-03-21 |
WO2014064806A1 (ja) | 2014-05-01 |
US20150340325A1 (en) | 2015-11-26 |
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