JP5948148B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP5948148B2
JP5948148B2 JP2012118188A JP2012118188A JP5948148B2 JP 5948148 B2 JP5948148 B2 JP 5948148B2 JP 2012118188 A JP2012118188 A JP 2012118188A JP 2012118188 A JP2012118188 A JP 2012118188A JP 5948148 B2 JP5948148 B2 JP 5948148B2
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Japan
Prior art keywords
semiconductor layer
silicon semiconductor
silicon
single crystal
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012118188A
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English (en)
Japanese (ja)
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JP2013008960A5 (enExample
JP2013008960A (ja
Inventor
山崎　舜平
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2012118188A priority Critical patent/JP5948148B2/ja
Publication of JP2013008960A publication Critical patent/JP2013008960A/ja
Publication of JP2013008960A5 publication Critical patent/JP2013008960A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
JP2012118188A 2011-05-25 2012-05-24 光電変換装置 Expired - Fee Related JP5948148B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012118188A JP5948148B2 (ja) 2011-05-25 2012-05-24 光電変換装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011116489 2011-05-25
JP2011116489 2011-05-25
JP2012118188A JP5948148B2 (ja) 2011-05-25 2012-05-24 光電変換装置

Publications (3)

Publication Number Publication Date
JP2013008960A JP2013008960A (ja) 2013-01-10
JP2013008960A5 JP2013008960A5 (enExample) 2015-05-28
JP5948148B2 true JP5948148B2 (ja) 2016-07-06

Family

ID=47218409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012118188A Expired - Fee Related JP5948148B2 (ja) 2011-05-25 2012-05-24 光電変換装置

Country Status (2)

Country Link
US (1) US9012769B2 (enExample)
JP (1) JP5948148B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013077685A (ja) 2011-09-30 2013-04-25 Semiconductor Energy Lab Co Ltd 光電変換装置
JP5927027B2 (ja) 2011-10-05 2016-05-25 株式会社半導体エネルギー研究所 光電変換装置
JP5917082B2 (ja) 2011-10-20 2016-05-11 株式会社半導体エネルギー研究所 光電変換装置の作製方法
KR101925929B1 (ko) * 2013-01-16 2018-12-06 엘지전자 주식회사 태양 전지 및 그의 제조 방법
KR101925928B1 (ko) * 2013-01-21 2018-12-06 엘지전자 주식회사 태양 전지 및 그의 제조 방법
JP7206660B2 (ja) * 2018-07-17 2023-01-18 セイコーエプソン株式会社 光電変換素子、光電変換モジュールおよび電子機器
CN117293194A (zh) * 2023-09-06 2023-12-26 天合光能股份有限公司 太阳能电池及光伏组件
CN119008712A (zh) 2023-10-13 2024-11-22 浙江晶科能源有限公司 太阳能电池及光伏组件
CN119008711A (zh) * 2023-10-13 2024-11-22 浙江晶科能源有限公司 太阳能电池及其制备方法、光伏组件

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5213628A (en) 1990-09-20 1993-05-25 Sanyo Electric Co., Ltd. Photovoltaic device
JPH0795603B2 (ja) 1990-09-20 1995-10-11 三洋電機株式会社 光起電力装置
JP3469729B2 (ja) 1996-10-31 2003-11-25 三洋電機株式会社 太陽電池素子
US6222117B1 (en) * 1998-01-05 2001-04-24 Canon Kabushiki Kaisha Photovoltaic device, manufacturing method of photovoltaic device, photovoltaic device integrated with building material and power-generating apparatus
JP2003031831A (ja) * 2001-07-13 2003-01-31 Sanyo Electric Co Ltd 光起電力素子及びその製造方法
JP2005175160A (ja) * 2003-12-10 2005-06-30 Sanyo Electric Co Ltd 光起電力装置
US8816191B2 (en) * 2005-11-29 2014-08-26 Banpil Photonics, Inc. High efficiency photovoltaic cells and manufacturing thereof
EP2416373B1 (en) * 2009-03-30 2019-12-25 Panasonic Intellectual Property Management Co., Ltd. Solar cell
US20110041910A1 (en) 2009-08-18 2011-02-24 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof

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Publication number Publication date
JP2013008960A (ja) 2013-01-10
US9012769B2 (en) 2015-04-21
US20120298191A1 (en) 2012-11-29

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