JP5945553B2 - 被覆装置および被覆方法 - Google Patents

被覆装置および被覆方法 Download PDF

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Publication number
JP5945553B2
JP5945553B2 JP2013553970A JP2013553970A JP5945553B2 JP 5945553 B2 JP5945553 B2 JP 5945553B2 JP 2013553970 A JP2013553970 A JP 2013553970A JP 2013553970 A JP2013553970 A JP 2013553970A JP 5945553 B2 JP5945553 B2 JP 5945553B2
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JP
Japan
Prior art keywords
chamber
layer
transport
processing
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013553970A
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English (en)
Japanese (ja)
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JP2014507565A (ja
JP2014507565A5 (enExample
Inventor
エルカン コパラル，
エルカン コパラル，
アンドレアス クルッペル，
アンドレアス クルッペル，
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Applied Materials Inc
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Applied Materials Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C13/00—Means for manipulating or holding work, e.g. for separate articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/50—Multilayers
    • B05D7/56—Three layers or more
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H10P72/0456—
    • H10P72/3206—
    • H10P72/3314—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2013553970A 2011-02-21 2012-02-21 被覆装置および被覆方法 Expired - Fee Related JP5945553B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP11155238.6A EP2489759B1 (en) 2011-02-21 2011-02-21 System for utilization improvement of process chambers and method of operating thereof
EP11155238.6 2011-02-21
PCT/EP2012/052935 WO2012113792A1 (en) 2011-02-21 2012-02-21 Coating apparatus and method.

Publications (3)

Publication Number Publication Date
JP2014507565A JP2014507565A (ja) 2014-03-27
JP2014507565A5 JP2014507565A5 (enExample) 2015-04-09
JP5945553B2 true JP5945553B2 (ja) 2016-07-05

Family

ID=44243134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013553970A Expired - Fee Related JP5945553B2 (ja) 2011-02-21 2012-02-21 被覆装置および被覆方法

Country Status (7)

Country Link
US (2) US20120213938A1 (enExample)
EP (2) EP2489759B1 (enExample)
JP (1) JP5945553B2 (enExample)
KR (2) KR102095717B1 (enExample)
CN (1) CN102803551B (enExample)
TW (1) TWI579952B (enExample)
WO (1) WO2012113792A1 (enExample)

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TWI468538B (zh) * 2011-10-14 2015-01-11 晟銘電子科技股份有限公司 屏蔽層製造方法
US20150303090A1 (en) * 2012-09-10 2015-10-22 Applied Materials, Inc. Substrate transfer device and method of moving substrates
TWI582256B (zh) 2013-02-04 2017-05-11 愛發科股份有限公司 薄型基板處理裝置
JP2017513221A (ja) * 2014-04-02 2017-05-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板処理のためのシステム、基板処理のためのシステム用の真空回転モジュール、及び基板処理システムを操作する方法
TWI557837B (zh) * 2014-04-10 2016-11-11 Uvat Technology Co Ltd Vacuum equipment multi-vehicle simultaneous multi-processing process
TWI732285B (zh) * 2015-01-23 2021-07-01 美商應用材料股份有限公司 半導體處理設備
WO2016188550A1 (en) * 2015-05-22 2016-12-01 Applied Materials, Inc. Lock chamber, inline substrate processing system and method of operating an inline substrate processing system
US9972740B2 (en) * 2015-06-07 2018-05-15 Tesla, Inc. Chemical vapor deposition tool and process for fabrication of photovoltaic structures
DE102015013799A1 (de) * 2015-10-26 2017-04-27 Grenzebach Maschinenbau Gmbh Vorrichtung und Verfahren zum Beschichten überlanger flächenhafter Substrate, insbesondere Glasscheiben, in einer Vakuum-Beschichtungsanlage
CN105239051B (zh) * 2015-11-17 2018-11-30 广东腾胜真空技术工程有限公司 双向进出交替镀膜装置及方法
US9748434B1 (en) 2016-05-24 2017-08-29 Tesla, Inc. Systems, method and apparatus for curing conductive paste
US9954136B2 (en) 2016-08-03 2018-04-24 Tesla, Inc. Cassette optimized for an inline annealing system
JP6830772B2 (ja) * 2016-08-04 2021-02-17 株式会社ジャパンディスプレイ 積層膜の製造装置、及び積層膜の製造方法
US10115856B2 (en) 2016-10-31 2018-10-30 Tesla, Inc. System and method for curing conductive paste using induction heating
KR20180086715A (ko) * 2017-01-23 2018-08-01 어플라이드 머티어리얼스, 인코포레이티드 반송챔버, 이를 포함하는 기판처리시스템 및 이를 이용한 기판처리시스템의 기판처리방법
US10043693B1 (en) * 2017-06-06 2018-08-07 Applied Materials, Inc. Method and apparatus for handling substrates in a processing system having a buffer chamber
CN114127331A (zh) * 2019-07-25 2022-03-01 应用材料公司 用于处理多个基板的基板处理系统和在直列基板处理系统中处理基板的方法
US11856833B2 (en) 2020-01-22 2023-12-26 Applied Materials, Inc. In-line monitoring of OLED layer thickness and dopant concentration
WO2021150525A1 (en) * 2020-01-22 2021-07-29 Applied Materials, Inc. In-line monitoring of oled layer thickness and dopant concentration
KR102866529B1 (ko) 2020-10-28 2025-09-30 삼성전자주식회사 반도체 소자의 제조 장치
CN118742669A (zh) * 2022-03-14 2024-10-01 应用材料公司 真空沉积系统和在真空沉积系统中涂覆基板的方法
TWI843196B (zh) * 2022-09-08 2024-05-21 凌嘉科技股份有限公司 旋轉移載式立式鍍膜設備及雙面多層膜的鍍膜方法

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Also Published As

Publication number Publication date
WO2012113792A1 (en) 2012-08-30
EP2678462A1 (en) 2014-01-01
KR102095717B1 (ko) 2020-04-01
EP2489759A1 (en) 2012-08-22
JP2014507565A (ja) 2014-03-27
EP2678462B1 (en) 2017-07-26
CN102803551B (zh) 2016-03-16
US20120213938A1 (en) 2012-08-23
CN102803551A (zh) 2012-11-28
TWI579952B (zh) 2017-04-21
TW201248760A (en) 2012-12-01
KR20140015372A (ko) 2014-02-06
KR20190053293A (ko) 2019-05-17
US20140044880A1 (en) 2014-02-13
US9211563B2 (en) 2015-12-15
EP2489759B1 (en) 2014-12-10

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