JP5936568B2 - 酸化物半導体薄膜トランジスタ用基板およびその基板を用いた半導体装置 - Google Patents

酸化物半導体薄膜トランジスタ用基板およびその基板を用いた半導体装置 Download PDF

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Publication number
JP5936568B2
JP5936568B2 JP2013046827A JP2013046827A JP5936568B2 JP 5936568 B2 JP5936568 B2 JP 5936568B2 JP 2013046827 A JP2013046827 A JP 2013046827A JP 2013046827 A JP2013046827 A JP 2013046827A JP 5936568 B2 JP5936568 B2 JP 5936568B2
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JP
Japan
Prior art keywords
protective insulating
insulating layer
layer
oxide semiconductor
substrate
Prior art date
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Active
Application number
JP2013046827A
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English (en)
Japanese (ja)
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JP2014175464A5 (enExample
JP2014175464A (ja
Inventor
昌哉 中山
昌哉 中山
文彦 望月
文彦 望月
重徳 祐谷
重徳 祐谷
田中　淳
淳 田中
鈴木　真之
真之 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
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Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2013046827A priority Critical patent/JP5936568B2/ja
Priority to KR1020157027464A priority patent/KR101778874B1/ko
Priority to PCT/JP2014/000354 priority patent/WO2014136375A1/ja
Publication of JP2014175464A publication Critical patent/JP2014175464A/ja
Publication of JP2014175464A5 publication Critical patent/JP2014175464A5/ja
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Publication of JP5936568B2 publication Critical patent/JP5936568B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Thin Film Transistor (AREA)
JP2013046827A 2013-03-08 2013-03-08 酸化物半導体薄膜トランジスタ用基板およびその基板を用いた半導体装置 Active JP5936568B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013046827A JP5936568B2 (ja) 2013-03-08 2013-03-08 酸化物半導体薄膜トランジスタ用基板およびその基板を用いた半導体装置
KR1020157027464A KR101778874B1 (ko) 2013-03-08 2014-01-24 산화물 반도체 박막 트랜지스터용 기판
PCT/JP2014/000354 WO2014136375A1 (ja) 2013-03-08 2014-01-24 酸化物半導体薄膜トランジスタ用基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013046827A JP5936568B2 (ja) 2013-03-08 2013-03-08 酸化物半導体薄膜トランジスタ用基板およびその基板を用いた半導体装置

Publications (3)

Publication Number Publication Date
JP2014175464A JP2014175464A (ja) 2014-09-22
JP2014175464A5 JP2014175464A5 (enExample) 2015-07-09
JP5936568B2 true JP5936568B2 (ja) 2016-06-22

Family

ID=51490914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013046827A Active JP5936568B2 (ja) 2013-03-08 2013-03-08 酸化物半導体薄膜トランジスタ用基板およびその基板を用いた半導体装置

Country Status (3)

Country Link
JP (1) JP5936568B2 (enExample)
KR (1) KR101778874B1 (enExample)
WO (1) WO2014136375A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240090913A (ko) * 2018-03-30 2024-06-21 아모르픽스, 인크 비정질 금속 박막 트랜지스터
KR102299087B1 (ko) 2019-08-09 2021-09-08 김 철 환 광섬유사가 내장되어서 발광하는 혈관 및 피하용 카테터
CN112114460B (zh) * 2020-09-23 2022-12-23 北海惠科光电技术有限公司 基于阵列基板的绝缘单元及其制备方法、阵列基板及其制备方法、显示机构

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006196851A (ja) 2004-12-16 2006-07-27 Toppan Printing Co Ltd 薄膜トランジスタ及びその製造方法
KR20120039638A (ko) 2009-06-16 2012-04-25 바스프 에스이 반도체 금속 산화물 입자 층에서 미립자간 접촉 부위를 개선하고 간극을 충전하기 위한 열 불안정성 전구체 화합물
JP5394867B2 (ja) * 2009-09-17 2014-01-22 富士フイルム株式会社 ガスバリア膜およびガスバリアフィルム
JP4700130B1 (ja) * 2010-02-01 2011-06-15 富士フイルム株式会社 絶縁性金属基板および半導体装置
JP5473885B2 (ja) * 2010-02-08 2014-04-16 富士フイルム株式会社 絶縁層付金属基板およびその製造方法、半導体装置およびその製造方法ならびに太陽電池およびその製造方法
JP2011249674A (ja) * 2010-05-28 2011-12-08 Fujifilm Corp 薄膜トランジスタおよびその製造方法
JP5647860B2 (ja) * 2010-10-28 2015-01-07 富士フイルム株式会社 薄膜トランジスタおよびその製造方法
JP2013044000A (ja) * 2011-08-22 2013-03-04 Fujifilm Corp 絶縁層付金属基板およびその製造方法、半導体装置およびその製造方法、太陽電池およびその製造方法、電子回路およびその製造方法、ならびに発光素子およびその製造方法

Also Published As

Publication number Publication date
KR20150129767A (ko) 2015-11-20
WO2014136375A1 (ja) 2014-09-12
JP2014175464A (ja) 2014-09-22
KR101778874B1 (ko) 2017-09-14

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