JP5936310B2 - パワー半導体モジュール及びその取り付け構造 - Google Patents

パワー半導体モジュール及びその取り付け構造 Download PDF

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Publication number
JP5936310B2
JP5936310B2 JP2011059259A JP2011059259A JP5936310B2 JP 5936310 B2 JP5936310 B2 JP 5936310B2 JP 2011059259 A JP2011059259 A JP 2011059259A JP 2011059259 A JP2011059259 A JP 2011059259A JP 5936310 B2 JP5936310 B2 JP 5936310B2
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JP
Japan
Prior art keywords
metal substrate
power semiconductor
semiconductor module
electrically insulating
resin package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011059259A
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English (en)
Japanese (ja)
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JP2012195492A (ja
JP2012195492A5 (enExample
Inventor
晋助 浅田
晋助 浅田
雄悦 渡邊
雄悦 渡邊
浅尾　淑人
淑人 浅尾
健二郎 長尾
健二郎 長尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2011059259A priority Critical patent/JP5936310B2/ja
Priority to US13/204,226 priority patent/US8749977B2/en
Priority to EP11177061.6A priority patent/EP2500939B2/en
Priority to EP17187208.8A priority patent/EP3288075B1/en
Publication of JP2012195492A publication Critical patent/JP2012195492A/ja
Publication of JP2012195492A5 publication Critical patent/JP2012195492A5/ja
Application granted granted Critical
Publication of JP5936310B2 publication Critical patent/JP5936310B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
    • H01L2224/4101—Structure
    • H01L2224/4103—Connectors having different sizes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for individual devices of subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2011059259A 2011-03-17 2011-03-17 パワー半導体モジュール及びその取り付け構造 Expired - Fee Related JP5936310B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011059259A JP5936310B2 (ja) 2011-03-17 2011-03-17 パワー半導体モジュール及びその取り付け構造
US13/204,226 US8749977B2 (en) 2011-03-17 2011-08-05 Power semiconductor module and its attachment structure
EP11177061.6A EP2500939B2 (en) 2011-03-17 2011-08-10 Power semiconductor module attachment structure
EP17187208.8A EP3288075B1 (en) 2011-03-17 2011-08-10 Power semiconductor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011059259A JP5936310B2 (ja) 2011-03-17 2011-03-17 パワー半導体モジュール及びその取り付け構造

Publications (3)

Publication Number Publication Date
JP2012195492A JP2012195492A (ja) 2012-10-11
JP2012195492A5 JP2012195492A5 (enExample) 2014-02-20
JP5936310B2 true JP5936310B2 (ja) 2016-06-22

Family

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JP2011059259A Expired - Fee Related JP5936310B2 (ja) 2011-03-17 2011-03-17 パワー半導体モジュール及びその取り付け構造

Country Status (3)

Country Link
US (1) US8749977B2 (enExample)
EP (2) EP2500939B2 (enExample)
JP (1) JP5936310B2 (enExample)

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JP2013070026A (ja) 2011-09-08 2013-04-18 Rohm Co Ltd 半導体装置、半導体装置の製造方法、半導体装置の実装構造、およびパワー用半導体装置
JP6365322B2 (ja) * 2015-01-23 2018-08-01 三菱電機株式会社 半導体装置
JP6382784B2 (ja) * 2015-11-26 2018-08-29 株式会社Ｓｏｋｅｎ 半導体装置の製造方法
DE102015223599A1 (de) * 2015-11-27 2017-06-01 Robert Bosch Gmbh Leistungsmodul für einen Elektromotor
WO2017175612A1 (ja) * 2016-04-04 2017-10-12 三菱電機株式会社 パワーモジュール、パワー半導体装置及びパワーモジュール製造方法
JP6920790B2 (ja) * 2016-05-24 2021-08-18 ローム株式会社 インテリジェントパワーモジュール、電気自動車またはハイブリッドカー、およびインテリジェントパワーモジュールの組み立て方法
DE102016220553A1 (de) 2016-10-20 2018-04-26 Robert Bosch Gmbh Leistungsmodul
JP2019012767A (ja) 2017-06-30 2019-01-24 ルネサスエレクトロニクス株式会社 半導体モジュールの製造方法および半導体モジュール
CN111602239B (zh) * 2018-01-11 2023-10-24 阿莫善斯有限公司 功率半导体模块
JP6737306B2 (ja) * 2018-06-27 2020-08-05 三菱電機株式会社 半導体装置
JP7052689B2 (ja) * 2018-11-21 2022-04-12 株式会社オートネットワーク技術研究所 回路構成体
JP7309553B2 (ja) * 2019-09-20 2023-07-18 スタンレー電気株式会社 光源ユニット、光源ユニットの製造方法及び車両用灯具
CN113013106B (zh) * 2019-12-19 2023-08-11 广东美的白色家电技术创新中心有限公司 智能功率模块及其制备方法、包含该智能功率模块的电器
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US11791238B2 (en) 2021-06-23 2023-10-17 Infineon Technologies Austria Ag Semiconductor package with releasable isolation layer protection
US20230005822A1 (en) * 2021-07-01 2023-01-05 Hamilton Sundstrand Corporation Polyimide bonded bus bar for power device
CN114664766B (zh) * 2022-03-15 2025-10-03 广东汇芯半导体有限公司 一种功率模块
FR3158011A1 (fr) * 2023-12-31 2025-07-04 Valeo Eautomotive Germany Gmbh Système électrique avec un radiateur de refroidissement d’un dispositif électrique

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Also Published As

Publication number Publication date
EP2500939B2 (en) 2025-05-07
EP2500939A2 (en) 2012-09-19
EP3288075B1 (en) 2019-06-26
EP3288075A1 (en) 2018-02-28
EP2500939A3 (en) 2013-05-15
US20120236503A1 (en) 2012-09-20
JP2012195492A (ja) 2012-10-11
US8749977B2 (en) 2014-06-10
EP2500939B1 (en) 2018-12-26

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