JP5935643B2 - 半導体発光装置 - Google Patents

半導体発光装置 Download PDF

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Publication number
JP5935643B2
JP5935643B2 JP2012224681A JP2012224681A JP5935643B2 JP 5935643 B2 JP5935643 B2 JP 5935643B2 JP 2012224681 A JP2012224681 A JP 2012224681A JP 2012224681 A JP2012224681 A JP 2012224681A JP 5935643 B2 JP5935643 B2 JP 5935643B2
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Japan
Prior art keywords
light emitting
region
emitting device
semiconductor light
semiconductor
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Active
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JP2012224681A
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English (en)
Japanese (ja)
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JP2014078575A (ja
Inventor
暢尚 杉森
暢尚 杉森
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Sanken Electric Co Ltd
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Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP2012224681A priority Critical patent/JP5935643B2/ja
Priority to KR20130114286A priority patent/KR101493377B1/ko
Priority to CN201310464248.9A priority patent/CN103730478B/zh
Priority to TW102136497A priority patent/TWI542043B/zh
Publication of JP2014078575A publication Critical patent/JP2014078575A/ja
Application granted granted Critical
Publication of JP5935643B2 publication Critical patent/JP5935643B2/ja
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/42Transparent materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
JP2012224681A 2012-10-10 2012-10-10 半導体発光装置 Active JP5935643B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012224681A JP5935643B2 (ja) 2012-10-10 2012-10-10 半導体発光装置
KR20130114286A KR101493377B1 (ko) 2012-10-10 2013-09-26 반도체 발광장치
CN201310464248.9A CN103730478B (zh) 2012-10-10 2013-10-08 半导体发光装置
TW102136497A TWI542043B (zh) 2012-10-10 2013-10-09 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012224681A JP5935643B2 (ja) 2012-10-10 2012-10-10 半導体発光装置

Publications (2)

Publication Number Publication Date
JP2014078575A JP2014078575A (ja) 2014-05-01
JP5935643B2 true JP5935643B2 (ja) 2016-06-15

Family

ID=50454492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012224681A Active JP5935643B2 (ja) 2012-10-10 2012-10-10 半導体発光装置

Country Status (4)

Country Link
JP (1) JP5935643B2 (zh)
KR (1) KR101493377B1 (zh)
CN (1) CN103730478B (zh)
TW (1) TWI542043B (zh)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6612119B2 (ja) * 2015-02-16 2019-11-27 株式会社東芝 半導体発光装置
KR102385327B1 (ko) * 2015-04-06 2022-04-12 삼성디스플레이 주식회사 플렉서블 표시 장치 및 이의 제조 방법
KR102520536B1 (ko) * 2016-03-30 2023-04-12 엘지이노텍 주식회사 반도체 소자, 이를 포함하는 표시패널, 표시장치, 통신장치
KR102539668B1 (ko) * 2016-06-30 2023-06-02 엘지이노텍 주식회사 반도체 소자, 이를 포함하는 표시패널, 표시장치, 통신장치
WO2017171337A1 (ko) * 2016-03-30 2017-10-05 엘지이노텍 주식회사 반도체 소자
US10237929B2 (en) * 2016-04-27 2019-03-19 Sensor Electronic Technology, Inc. Solid-state lighting source with integrated electronic modulator
KR102573586B1 (ko) * 2016-06-16 2023-09-01 엘지이노텍 주식회사 표시 장치 및 이의 제조 방법
KR102566787B1 (ko) * 2016-06-27 2023-08-11 엘지디스플레이 주식회사 발광 다이오드 칩 및 이를 포함하는 디스플레이 장치와 이의 제조 방법
KR102648970B1 (ko) * 2016-06-30 2024-03-19 엘지디스플레이 주식회사 디스플레이 장치와 이의 제조 방법
KR101878666B1 (ko) * 2016-11-11 2018-08-16 순천대학교 산학협력단 마이크로 픽셀 어레이 발광다이오드 및 이를 포함하는 조명 장치
KR20180078941A (ko) * 2016-12-30 2018-07-10 (재)한국나노기술원 액티브 매트릭스 디스플레이용 led 소자 및 그의 제조방법
KR102041270B1 (ko) * 2018-04-04 2019-11-06 한국광기술원 미세 led 칩 및 패키지에 대한 제조방법
KR102022310B1 (ko) * 2018-04-04 2019-09-18 한국광기술원 능동소자 집적형 미세 led 칩 및 이에 대한 제조방법
KR102550415B1 (ko) 2018-05-09 2023-07-05 삼성전자주식회사 Led 장치 및 이를 이용한 led 램프
TW202005076A (zh) * 2018-05-29 2020-01-16 美商康寧公司 結合高溫與低溫元件形成的系統與方法
KR102609672B1 (ko) * 2018-07-17 2023-12-05 이 잉크 코포레이션 전기 광학 디스플레이들 및 구동 방법들
CN111627949A (zh) * 2019-02-27 2020-09-04 昆山工研院新型平板显示技术中心有限公司 微发光二极管像素单元器件结构、制备方法及显示面板
KR102243109B1 (ko) * 2019-07-02 2021-04-22 한국과학기술원 웨이퍼 레벨 전사를 이용한 중/소형 디스플레이의 대량 제조방법 및 대형 디스플레이 제조 방법
CN110649060B (zh) * 2019-11-01 2022-04-26 京东方科技集团股份有限公司 微发光二极管芯片及制作方法、显示面板制作方法
KR20210111920A (ko) * 2020-03-03 2021-09-14 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
CN116134630A (zh) * 2020-09-17 2023-05-16 日亚化学工业株式会社 图像显示装置的制造方法及图像显示装置
WO2022113949A1 (ja) * 2020-11-25 2022-06-02 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
CN116420240A (zh) * 2020-11-25 2023-07-11 日亚化学工业株式会社 图像显示装置的制造方法以及图像显示装置
JPWO2022209748A1 (zh) * 2021-03-29 2022-10-06
JPWO2022209823A1 (zh) * 2021-03-30 2022-10-06
JP7508697B2 (ja) 2021-03-31 2024-07-01 株式会社ジャパンディスプレイ 表示装置
KR102578744B1 (ko) * 2022-09-23 2023-09-14 엔스펙트라 주식회사 반사형 맞춤 컬러 표시장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100234350B1 (ko) 1992-03-28 1999-12-15 윤종용 화합물 반도체 장치의 제조방법
US6333522B1 (en) * 1997-01-31 2001-12-25 Matsushita Electric Industrial Co., Ltd. Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor
JPH10270753A (ja) * 1997-03-21 1998-10-09 Sanyo Electric Co Ltd 半導体発光素子および表示装置
JP2001127278A (ja) * 1999-10-25 2001-05-11 Rohm Co Ltd 複合半導体装置
CN100468766C (zh) * 2003-09-24 2009-03-11 三垦电气株式会社 氮化物类半导体元件
JP4916859B2 (ja) * 2005-12-20 2012-04-18 株式会社半導体エネルギー研究所 半導体装置、表示装置、電子機器、及び半導体装置の製造方法
JP4871344B2 (ja) * 2008-11-25 2012-02-08 株式会社東芝 発光装置及びその製造方法
JP5849388B2 (ja) * 2010-11-04 2016-01-27 サンケン電気株式会社 半導体発光装置

Also Published As

Publication number Publication date
CN103730478A (zh) 2014-04-16
TW201429004A (zh) 2014-07-16
KR20140046372A (ko) 2014-04-18
JP2014078575A (ja) 2014-05-01
KR101493377B1 (ko) 2015-02-13
CN103730478B (zh) 2016-05-04
TWI542043B (zh) 2016-07-11

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