KR101493377B1 - 반도체 발광장치 - Google Patents

반도체 발광장치 Download PDF

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Publication number
KR101493377B1
KR101493377B1 KR20130114286A KR20130114286A KR101493377B1 KR 101493377 B1 KR101493377 B1 KR 101493377B1 KR 20130114286 A KR20130114286 A KR 20130114286A KR 20130114286 A KR20130114286 A KR 20130114286A KR 101493377 B1 KR101493377 B1 KR 101493377B1
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KR
South Korea
Prior art keywords
light emitting
region
insulating film
interlayer insulating
control transistor
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KR20130114286A
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English (en)
Korean (ko)
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KR20140046372A (ko
Inventor
노부히사 스기모리
Original Assignee
산켄덴키 가부시키가이샤
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Publication of KR20140046372A publication Critical patent/KR20140046372A/ko
Application granted granted Critical
Publication of KR101493377B1 publication Critical patent/KR101493377B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
KR20130114286A 2012-10-10 2013-09-26 반도체 발광장치 KR101493377B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-224681 2012-10-10
JP2012224681A JP5935643B2 (ja) 2012-10-10 2012-10-10 半導体発光装置

Publications (2)

Publication Number Publication Date
KR20140046372A KR20140046372A (ko) 2014-04-18
KR101493377B1 true KR101493377B1 (ko) 2015-02-13

Family

ID=50454492

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20130114286A KR101493377B1 (ko) 2012-10-10 2013-09-26 반도체 발광장치

Country Status (4)

Country Link
JP (1) JP5935643B2 (zh)
KR (1) KR101493377B1 (zh)
CN (1) CN103730478B (zh)
TW (1) TWI542043B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180052977A (ko) * 2016-11-11 2018-05-21 순천대학교 산학협력단 마이크로 픽셀 어레이 발광다이오드 및 이를 포함하는 조명 장치

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6612119B2 (ja) * 2015-02-16 2019-11-27 株式会社東芝 半導体発光装置
KR102385327B1 (ko) * 2015-04-06 2022-04-12 삼성디스플레이 주식회사 플렉서블 표시 장치 및 이의 제조 방법
KR102520536B1 (ko) * 2016-03-30 2023-04-12 엘지이노텍 주식회사 반도체 소자, 이를 포함하는 표시패널, 표시장치, 통신장치
KR102539668B1 (ko) * 2016-06-30 2023-06-02 엘지이노텍 주식회사 반도체 소자, 이를 포함하는 표시패널, 표시장치, 통신장치
WO2017171337A1 (ko) * 2016-03-30 2017-10-05 엘지이노텍 주식회사 반도체 소자
US10237929B2 (en) * 2016-04-27 2019-03-19 Sensor Electronic Technology, Inc. Solid-state lighting source with integrated electronic modulator
KR102573586B1 (ko) * 2016-06-16 2023-09-01 엘지이노텍 주식회사 표시 장치 및 이의 제조 방법
KR102566787B1 (ko) * 2016-06-27 2023-08-11 엘지디스플레이 주식회사 발광 다이오드 칩 및 이를 포함하는 디스플레이 장치와 이의 제조 방법
KR102648970B1 (ko) * 2016-06-30 2024-03-19 엘지디스플레이 주식회사 디스플레이 장치와 이의 제조 방법
KR20180078941A (ko) * 2016-12-30 2018-07-10 (재)한국나노기술원 액티브 매트릭스 디스플레이용 led 소자 및 그의 제조방법
KR102041270B1 (ko) * 2018-04-04 2019-11-06 한국광기술원 미세 led 칩 및 패키지에 대한 제조방법
KR102022310B1 (ko) * 2018-04-04 2019-09-18 한국광기술원 능동소자 집적형 미세 led 칩 및 이에 대한 제조방법
KR102550415B1 (ko) 2018-05-09 2023-07-05 삼성전자주식회사 Led 장치 및 이를 이용한 led 램프
TW202005076A (zh) * 2018-05-29 2020-01-16 美商康寧公司 結合高溫與低溫元件形成的系統與方法
KR102609672B1 (ko) * 2018-07-17 2023-12-05 이 잉크 코포레이션 전기 광학 디스플레이들 및 구동 방법들
CN111627949A (zh) * 2019-02-27 2020-09-04 昆山工研院新型平板显示技术中心有限公司 微发光二极管像素单元器件结构、制备方法及显示面板
KR102243109B1 (ko) * 2019-07-02 2021-04-22 한국과학기술원 웨이퍼 레벨 전사를 이용한 중/소형 디스플레이의 대량 제조방법 및 대형 디스플레이 제조 방법
CN110649060B (zh) * 2019-11-01 2022-04-26 京东方科技集团股份有限公司 微发光二极管芯片及制作方法、显示面板制作方法
KR20210111920A (ko) * 2020-03-03 2021-09-14 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
CN116134630A (zh) * 2020-09-17 2023-05-16 日亚化学工业株式会社 图像显示装置的制造方法及图像显示装置
WO2022113949A1 (ja) * 2020-11-25 2022-06-02 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
CN116420240A (zh) * 2020-11-25 2023-07-11 日亚化学工业株式会社 图像显示装置的制造方法以及图像显示装置
JPWO2022209748A1 (zh) * 2021-03-29 2022-10-06
JPWO2022209823A1 (zh) * 2021-03-30 2022-10-06
JP7508697B2 (ja) 2021-03-31 2024-07-01 株式会社ジャパンディスプレイ 表示装置
KR102578744B1 (ko) * 2022-09-23 2023-09-14 엔스펙트라 주식회사 반사형 맞춤 컬러 표시장치

Citations (3)

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JPH10270753A (ja) * 1997-03-21 1998-10-09 Sanyo Electric Co Ltd 半導体発光素子および表示装置
KR100234350B1 (ko) 1992-03-28 1999-12-15 윤종용 화합물 반도체 장치의 제조방법
JP4871344B2 (ja) 2008-11-25 2012-02-08 株式会社東芝 発光装置及びその製造方法

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US6333522B1 (en) * 1997-01-31 2001-12-25 Matsushita Electric Industrial Co., Ltd. Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor
JP2001127278A (ja) * 1999-10-25 2001-05-11 Rohm Co Ltd 複合半導体装置
CN100468766C (zh) * 2003-09-24 2009-03-11 三垦电气株式会社 氮化物类半导体元件
JP4916859B2 (ja) * 2005-12-20 2012-04-18 株式会社半導体エネルギー研究所 半導体装置、表示装置、電子機器、及び半導体装置の製造方法
JP5849388B2 (ja) * 2010-11-04 2016-01-27 サンケン電気株式会社 半導体発光装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100234350B1 (ko) 1992-03-28 1999-12-15 윤종용 화합물 반도체 장치의 제조방법
JPH10270753A (ja) * 1997-03-21 1998-10-09 Sanyo Electric Co Ltd 半導体発光素子および表示装置
JP4871344B2 (ja) 2008-11-25 2012-02-08 株式会社東芝 発光装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180052977A (ko) * 2016-11-11 2018-05-21 순천대학교 산학협력단 마이크로 픽셀 어레이 발광다이오드 및 이를 포함하는 조명 장치
KR101878666B1 (ko) * 2016-11-11 2018-08-16 순천대학교 산학협력단 마이크로 픽셀 어레이 발광다이오드 및 이를 포함하는 조명 장치

Also Published As

Publication number Publication date
CN103730478A (zh) 2014-04-16
TW201429004A (zh) 2014-07-16
KR20140046372A (ko) 2014-04-18
JP5935643B2 (ja) 2016-06-15
JP2014078575A (ja) 2014-05-01
CN103730478B (zh) 2016-05-04
TWI542043B (zh) 2016-07-11

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