JP5931083B2 - 組立品及びそれを含む電子デバイス - Google Patents

組立品及びそれを含む電子デバイス Download PDF

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Publication number
JP5931083B2
JP5931083B2 JP2013540016A JP2013540016A JP5931083B2 JP 5931083 B2 JP5931083 B2 JP 5931083B2 JP 2013540016 A JP2013540016 A JP 2013540016A JP 2013540016 A JP2013540016 A JP 2013540016A JP 5931083 B2 JP5931083 B2 JP 5931083B2
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Japan
Prior art keywords
dielectric layer
disposed
layer
isocyanurate
gate electrode
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Expired - Fee Related
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JP2013540016A
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Japanese (ja)
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JP2014502047A5 (enExample
JP2014502047A (ja
Inventor
ロバート エス． クラウ，
ロバート エス． クラウ，
ジェイムス シー． ノヴァック，
ジェイムス シー． ノヴァック，
デイヴィッド エイチ． レディンガー，
デイヴィッド エイチ． レディンガー，
グオピン マオ，
グオピン マオ，
マイケル イー． グリフィン，
マイケル イー． グリフィン，
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2014502047A5 publication Critical patent/JP2014502047A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
JP2013540016A 2010-11-22 2011-11-17 組立品及びそれを含む電子デバイス Expired - Fee Related JP5931083B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41597510P 2010-11-22 2010-11-22
US61/415,975 2010-11-22
PCT/US2011/061199 WO2012071243A2 (en) 2010-11-22 2011-11-17 Assembly and electronic devices including the same

Publications (3)

Publication Number Publication Date
JP2014502047A JP2014502047A (ja) 2014-01-23
JP2014502047A5 JP2014502047A5 (enExample) 2015-01-08
JP5931083B2 true JP5931083B2 (ja) 2016-06-08

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ID=46052857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013540016A Expired - Fee Related JP5931083B2 (ja) 2010-11-22 2011-11-17 組立品及びそれを含む電子デバイス

Country Status (6)

Country Link
US (1) US8835915B2 (enExample)
EP (1) EP2643864A2 (enExample)
JP (1) JP5931083B2 (enExample)
CN (1) CN103222081B (enExample)
SG (1) SG190340A1 (enExample)
WO (1) WO2012071243A2 (enExample)

Families Citing this family (4)

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US20140061648A1 (en) * 2012-08-31 2014-03-06 David H. Levy Thin film transistor including dielectric stack
KR102335364B1 (ko) 2014-03-27 2021-12-06 쓰리엠 이노베이티브 프로퍼티즈 캄파니 오가노보란-함유 조성물, 및 그의 사용 방법
CN107887269A (zh) * 2017-11-03 2018-04-06 通威太阳能（安徽）有限公司 一种晶体硅太阳能电池刻蚀工艺
KR102820132B1 (ko) 2019-09-03 2025-06-12 고쿠리츠다이가쿠호우진 도쿄다이가쿠 유기 반도체 디바이스의 소스/드레인용 전극, 그것을 사용한 유기 반도체 디바이스, 및 그것들의 제조 방법

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US5257478A (en) 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
US5739254A (en) 1996-08-29 1998-04-14 Xerox Corporation Process for haloalkylation of high performance polymers
US6126532A (en) 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
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US6702954B1 (en) 2000-10-19 2004-03-09 Ferro Corporation Chemical-mechanical polishing slurry and method
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KR20130089580A (ko) * 2010-06-23 2013-08-12 아사히 가라스 가부시키가이샤 경화성 조성물 및 경화막의 제조 방법

Also Published As

Publication number Publication date
JP2014502047A (ja) 2014-01-23
US8835915B2 (en) 2014-09-16
CN103222081A (zh) 2013-07-24
CN103222081B (zh) 2016-04-06
SG190340A1 (en) 2013-06-28
WO2012071243A3 (en) 2012-08-02
WO2012071243A2 (en) 2012-05-31
US20130256640A1 (en) 2013-10-03
EP2643864A2 (en) 2013-10-02

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