SG190340A1 - Assembly and electronic devices including the same - Google Patents
Assembly and electronic devices including the same Download PDFInfo
- Publication number
- SG190340A1 SG190340A1 SG2013038690A SG2013038690A SG190340A1 SG 190340 A1 SG190340 A1 SG 190340A1 SG 2013038690 A SG2013038690 A SG 2013038690A SG 2013038690 A SG2013038690 A SG 2013038690A SG 190340 A1 SG190340 A1 SG 190340A1
- Authority
- SG
- Singapore
- Prior art keywords
- assembly according
- free
- pentacene
- isocyanurate
- bis
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 69
- 239000000463 material Substances 0.000 claims abstract description 37
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical group OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000002245 particle Substances 0.000 claims abstract description 9
- 229920000642 polymer Polymers 0.000 claims abstract description 9
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 52
- -1 silylethynyl substituent Chemical group 0.000 claims description 36
- 239000000178 monomer Substances 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 19
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 18
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 13
- 229920003026 Acene Polymers 0.000 claims description 11
- FMZQNTNMBORAJM-UHFFFAOYSA-N tri(propan-2-yl)-[2-[13-[2-tri(propan-2-yl)silylethynyl]pentacen-6-yl]ethynyl]silane Chemical compound C1=CC=C2C=C3C(C#C[Si](C(C)C)(C(C)C)C(C)C)=C(C=C4C(C=CC=C4)=C4)C4=C(C#C[Si](C(C)C)(C(C)C)C(C)C)C3=CC2=C1 FMZQNTNMBORAJM-UHFFFAOYSA-N 0.000 claims description 8
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 4
- VTRPRZLFUMSDQE-UHFFFAOYSA-N 2-[13-[2-[di(propan-2-yl)-prop-1-en-2-ylsilyl]ethynyl]pentacen-6-yl]ethynyl-di(propan-2-yl)-prop-1-en-2-ylsilane Chemical compound C1=CC=C2C=C3C(C#C[Si](C(C)C)(C(C)C)C(C)=C)=C(C=C4C(C=CC=C4)=C4)C4=C(C#C[Si](C(C)C)(C(C)C)C(C)=C)C3=CC2=C1 VTRPRZLFUMSDQE-UHFFFAOYSA-N 0.000 claims description 3
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 claims description 3
- GDTYAMFKUNKWEZ-UHFFFAOYSA-N but-1-en-2-yl-[2-[13-[2-[but-1-en-2-yl-di(propan-2-yl)silyl]ethynyl]pentacen-6-yl]ethynyl]-di(propan-2-yl)silane Chemical compound C1=CC=C2C=C3C(C#C[Si](C(=C)CC)(C(C)C)C(C)C)=C(C=C4C(C=CC=C4)=C4)C4=C(C#C[Si](C(C)C)(C(C)C)C(=C)CC)C3=CC2=C1 GDTYAMFKUNKWEZ-UHFFFAOYSA-N 0.000 claims description 3
- KQGMHHVEWANJPG-UHFFFAOYSA-N cyclopropyl-[2-[13-[2-[cyclopropyl-di(propan-2-yl)silyl]ethynyl]-2,3,9,10-tetramethylpentacen-6-yl]ethynyl]-di(propan-2-yl)silane Chemical compound C1CC1[Si](C(C)C)(C(C)C)C#CC(C1=CC2=CC(C)=C(C)C=C2C=C11)=C2C=C3C=C(C)C(C)=CC3=CC2=C1C#C[Si](C(C)C)(C(C)C)C1CC1 KQGMHHVEWANJPG-UHFFFAOYSA-N 0.000 claims description 3
- JNCCVQTXAWTFCS-UHFFFAOYSA-N cyclopropyl-[2-[13-[2-[cyclopropyl-di(propan-2-yl)silyl]ethynyl]pentacen-6-yl]ethynyl]-di(propan-2-yl)silane Chemical compound C1CC1[Si](C(C)C)(C(C)C)C#CC(C1=CC2=CC=CC=C2C=C11)=C2C=C3C=CC=CC3=CC2=C1C#C[Si](C(C)C)(C(C)C)C1CC1 JNCCVQTXAWTFCS-UHFFFAOYSA-N 0.000 claims description 3
- BPXVHIRIPLPOPT-UHFFFAOYSA-N 1,3,5-tris(2-hydroxyethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound OCCN1C(=O)N(CCO)C(=O)N(CCO)C1=O BPXVHIRIPLPOPT-UHFFFAOYSA-N 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 17
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- 238000000151 deposition Methods 0.000 description 8
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 8
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- 239000004593 Epoxy Substances 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
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- FHLPGTXWCFQMIU-UHFFFAOYSA-N [4-[2-(4-prop-2-enoyloxyphenyl)propan-2-yl]phenyl] prop-2-enoate Chemical compound C=1C=C(OC(=O)C=C)C=CC=1C(C)(C)C1=CC=C(OC(=O)C=C)C=C1 FHLPGTXWCFQMIU-UHFFFAOYSA-N 0.000 description 4
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- YDKNBNOOCSNPNS-UHFFFAOYSA-N methyl 1,3-benzoxazole-2-carboxylate Chemical compound C1=CC=C2OC(C(=O)OC)=NC2=C1 YDKNBNOOCSNPNS-UHFFFAOYSA-N 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
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- PCLLJCFJFOBGDE-UHFFFAOYSA-N (5-bromo-2-chlorophenyl)methanamine Chemical compound NCC1=CC(Br)=CC=C1Cl PCLLJCFJFOBGDE-UHFFFAOYSA-N 0.000 description 2
- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 description 2
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- INQDDHNZXOAFFD-UHFFFAOYSA-N 2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOC(=O)C=C INQDDHNZXOAFFD-UHFFFAOYSA-N 0.000 description 2
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- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 1
- QWOVEJBDMKHZQK-UHFFFAOYSA-N 1,3,5-tris(3-trimethoxysilylpropyl)-1,3,5-triazinane-2,4,6-trione Chemical compound CO[Si](OC)(OC)CCCN1C(=O)N(CCC[Si](OC)(OC)OC)C(=O)N(CCC[Si](OC)(OC)OC)C1=O QWOVEJBDMKHZQK-UHFFFAOYSA-N 0.000 description 1
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- 125000003229 2-methylhexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
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- FQMIAEWUVYWVNB-UHFFFAOYSA-N 3-prop-2-enoyloxybutyl prop-2-enoate Chemical compound C=CC(=O)OC(C)CCOC(=O)C=C FQMIAEWUVYWVNB-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41597510P | 2010-11-22 | 2010-11-22 | |
| PCT/US2011/061199 WO2012071243A2 (en) | 2010-11-22 | 2011-11-17 | Assembly and electronic devices including the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG190340A1 true SG190340A1 (en) | 2013-06-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013038690A SG190340A1 (en) | 2010-11-22 | 2011-11-17 | Assembly and electronic devices including the same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8835915B2 (enExample) |
| EP (1) | EP2643864A2 (enExample) |
| JP (1) | JP5931083B2 (enExample) |
| CN (1) | CN103222081B (enExample) |
| SG (1) | SG190340A1 (enExample) |
| WO (1) | WO2012071243A2 (enExample) |
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|---|---|---|---|---|
| US20140061648A1 (en) * | 2012-08-31 | 2014-03-06 | David H. Levy | Thin film transistor including dielectric stack |
| KR102335364B1 (ko) | 2014-03-27 | 2021-12-06 | 쓰리엠 이노베이티브 프로퍼티즈 캄파니 | 오가노보란-함유 조성물, 및 그의 사용 방법 |
| CN107887269A (zh) * | 2017-11-03 | 2018-04-06 | 通威太阳能（安徽）有限公司 | 一种晶体硅太阳能电池刻蚀工艺 |
| KR102820132B1 (ko) | 2019-09-03 | 2025-06-12 | 고쿠리츠다이가쿠호우진 도쿄다이가쿠 | 유기 반도체 디바이스의 소스/드레인용 전극, 그것을 사용한 유기 반도체 디바이스, 및 그것들의 제조 방법 |
Family Cites Families (43)
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| US4262072A (en) | 1979-06-25 | 1981-04-14 | Minnesota Mining And Manufacturing Company | Poly(ethylenically unsaturated alkoxy) heterocyclic protective coatings |
| US5257478A (en) | 1990-03-22 | 1993-11-02 | Rodel, Inc. | Apparatus for interlayer planarization of semiconductor material |
| US5739254A (en) | 1996-08-29 | 1998-04-14 | Xerox Corporation | Process for haloalkylation of high performance polymers |
| US6126532A (en) | 1997-04-18 | 2000-10-03 | Cabot Corporation | Polishing pads for a semiconductor substrate |
| US5921855A (en) | 1997-05-15 | 1999-07-13 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
| US6238592B1 (en) | 1999-03-10 | 2001-05-29 | 3M Innovative Properties Company | Working liquids and methods for modifying structured wafers suited for semiconductor fabrication |
| US6491843B1 (en) | 1999-12-08 | 2002-12-10 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
| US6702954B1 (en) | 2000-10-19 | 2004-03-09 | Ferro Corporation | Chemical-mechanical polishing slurry and method |
| US20030097010A1 (en) | 2001-09-27 | 2003-05-22 | Vogel Dennis E. | Process for preparing pentacene derivatives |
| AU2002327747A1 (en) | 2001-09-27 | 2003-04-07 | 3M Innovative Properties Company | Substituted pentacene semiconductors |
| US6998068B2 (en) | 2003-08-15 | 2006-02-14 | 3M Innovative Properties Company | Acene-thiophene semiconductors |
| US6913517B2 (en) | 2002-05-23 | 2005-07-05 | Cabot Microelectronics Corporation | Microporous polishing pads |
| US6908366B2 (en) | 2003-01-10 | 2005-06-21 | 3M Innovative Properties Company | Method of using a soft subpad for chemical mechanical polishing |
| US7109519B2 (en) | 2003-07-15 | 2006-09-19 | 3M Innovative Properties Company | Bis(2-acenyl)acetylene semiconductors |
| US6955939B1 (en) | 2003-11-03 | 2005-10-18 | Advanced Micro Devices, Inc. | Memory element formation with photosensitive polymer dielectric |
| JP4124787B2 (ja) | 2004-01-15 | 2008-07-23 | 松下電器産業株式会社 | 電界効果トランジスタ及びそれを用いた表示装置 |
| KR100560796B1 (ko) * | 2004-06-24 | 2006-03-13 | 삼성에스디아이 주식회사 | 유기 박막트랜지스터 및 그의 제조방법 |
| JP5109223B2 (ja) | 2004-08-04 | 2012-12-26 | ソニー株式会社 | 電界効果型トランジスタ |
| JP2008509271A (ja) | 2004-08-13 | 2008-03-27 | ヘ−ウク・イ | 機能性コーティング組成物、これを用いた機能性被膜及びそれらの製造方法 |
| US7523440B2 (en) | 2004-11-16 | 2009-04-21 | The Mathworks, Inc. | Dynamic generation of formatted user interfaces in software environments |
| WO2006057714A2 (en) | 2004-11-29 | 2006-06-01 | Rajeev Bajaj | Method and apparatus for improved chemical mechanical planarization pad with uniform polish performance |
| US7264872B2 (en) | 2004-12-30 | 2007-09-04 | 3M Innovative Properties Company | Durable high index nanocomposites for AR coatings |
| US7241437B2 (en) | 2004-12-30 | 2007-07-10 | 3M Innovative Properties Company | Zirconia particles |
| US7410631B2 (en) | 2005-03-02 | 2008-08-12 | Aps Laboratory | Metal phosphate sols, metal nanoparticles, metal-chalcogenide nanoparticles, and nanocomposites made therefrom |
| JP4424341B2 (ja) | 2005-12-02 | 2010-03-03 | セイコーエプソン株式会社 | 薄膜トランジスタ、電子回路、表示装置および電子機器 |
| US7267610B1 (en) | 2006-08-30 | 2007-09-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | CMP pad having unevenly spaced grooves |
| KR101224723B1 (ko) | 2006-09-15 | 2013-01-21 | 삼성전자주식회사 | 유기 절연막 조성물, 이를 이용하여 제조된 유기 절연막 및유기 박막 트랜지스터 |
| KR101316291B1 (ko) | 2007-02-16 | 2013-10-08 | 삼성전자주식회사 | 공중합체, 유기절연층 조성물 및 그를 이용하여 제조된유기 절연층 및 유기 박막 트랜지스터 |
| JP5196194B2 (ja) * | 2007-05-30 | 2013-05-15 | 日産化学工業株式会社 | ゲート絶縁膜とその形成剤、製造方法及びそれを用いる薄膜トランジスタ並びにその製造方法 |
| US20090001356A1 (en) | 2007-06-29 | 2009-01-01 | 3M Innovative Properties Company | Electronic devices having a solution deposited gate dielectric |
| US7879688B2 (en) | 2007-06-29 | 2011-02-01 | 3M Innovative Properties Company | Methods for making electronic devices with a solution deposited gate dielectric |
| EP2063471B1 (en) * | 2007-11-26 | 2012-10-03 | Hitachi Ltd. | Organic field effect transistor |
| JP5385377B2 (ja) | 2008-05-15 | 2014-01-08 | スリーエム イノベイティブ プロパティズ カンパニー | 終点窓を持った研磨パッドおよびこれを用いたシステムおよび使用方法 |
| WO2009155106A1 (en) | 2008-05-30 | 2009-12-23 | 3M Innovative Properties Company | Silylethynyl pentacene compounds and compositions and methods of making and using the same |
| WO2009158201A1 (en) | 2008-06-27 | 2009-12-30 | 3M Innovative Properties Company | Methods op fabricating crystalline organic semiconductive layers |
| CN101359719B (zh) * | 2008-09-11 | 2011-03-30 | 电子科技大学 | 一种有机薄膜晶体管及其制备方法 |
| JP2010108986A (ja) * | 2008-10-28 | 2010-05-13 | Hitachi Chem Co Ltd | ゲート絶縁膜層成形材料、電界効果型トランジスタ及びこの電界効果型トランジスタの製造方法 |
| WO2010056568A1 (en) | 2008-11-14 | 2010-05-20 | 3M Innovative Properties Company | Off-center deposition of organic semiconductor in an organic semiconductor device |
| WO2010061886A1 (ja) * | 2008-11-28 | 2010-06-03 | 日産化学工業株式会社 | 薄膜トランジスタ用ゲート絶縁膜形成組成物 |
| US8418228B2 (en) * | 2008-12-03 | 2013-04-09 | Electronics And Telecommunications Research Institute | Converged access control method using network access device at penetration node of IP network of convergence ALL-IP network |
| CN101826563B (zh) * | 2009-03-03 | 2014-05-28 | E.I.内穆尔杜邦公司 | 封装材料和采用该封装材料形成的太阳能电池组件 |
| JP5756605B2 (ja) * | 2010-06-15 | 2015-07-29 | 株式会社カネカ | 薄膜トランジスタ |
| KR20130089580A (ko) * | 2010-06-23 | 2013-08-12 | 아사히 가라스 가부시키가이샤 | 경화성 조성물 및 경화막의 제조 방법 |
-
2011
- 2011-11-17 SG SG2013038690A patent/SG190340A1/en unknown
- 2011-11-17 EP EP11840707.1A patent/EP2643864A2/en not_active Withdrawn
- 2011-11-17 US US13/880,914 patent/US8835915B2/en not_active Expired - Fee Related
- 2011-11-17 JP JP2013540016A patent/JP5931083B2/ja not_active Expired - Fee Related
- 2011-11-17 CN CN201180055677.XA patent/CN103222081B/zh not_active Expired - Fee Related
- 2011-11-17 WO PCT/US2011/061199 patent/WO2012071243A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014502047A (ja) | 2014-01-23 |
| US8835915B2 (en) | 2014-09-16 |
| CN103222081A (zh) | 2013-07-24 |
| CN103222081B (zh) | 2016-04-06 |
| WO2012071243A3 (en) | 2012-08-02 |
| JP5931083B2 (ja) | 2016-06-08 |
| WO2012071243A2 (en) | 2012-05-31 |
| US20130256640A1 (en) | 2013-10-03 |
| EP2643864A2 (en) | 2013-10-02 |
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