CN103222081B - 组件和包括该组件的电子器件 - Google Patents

组件和包括该组件的电子器件 Download PDF

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Publication number
CN103222081B
CN103222081B CN201180055677.XA CN201180055677A CN103222081B CN 103222081 B CN103222081 B CN 103222081B CN 201180055677 A CN201180055677 A CN 201180055677A CN 103222081 B CN103222081 B CN 103222081B
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CN
China
Prior art keywords
dielectric layer
semiconductor layer
layer
grid
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201180055677.XA
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English (en)
Chinese (zh)
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CN103222081A (zh
Inventor
R·S·克拉夫
J·C·诺瓦克
D·H·雷丁杰
毛国平
M·E·格里芬
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of CN103222081A publication Critical patent/CN103222081A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
CN201180055677.XA 2010-11-22 2011-11-17 组件和包括该组件的电子器件 Expired - Fee Related CN103222081B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41597510P 2010-11-22 2010-11-22
US61/415,975 2010-11-22
PCT/US2011/061199 WO2012071243A2 (en) 2010-11-22 2011-11-17 Assembly and electronic devices including the same

Publications (2)

Publication Number Publication Date
CN103222081A CN103222081A (zh) 2013-07-24
CN103222081B true CN103222081B (zh) 2016-04-06

Family

ID=46052857

Family Applications (1)

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CN201180055677.XA Expired - Fee Related CN103222081B (zh) 2010-11-22 2011-11-17 组件和包括该组件的电子器件

Country Status (6)

Country Link
US (1) US8835915B2 (enExample)
EP (1) EP2643864A2 (enExample)
JP (1) JP5931083B2 (enExample)
CN (1) CN103222081B (enExample)
SG (1) SG190340A1 (enExample)
WO (1) WO2012071243A2 (enExample)

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* Cited by examiner, † Cited by third party
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US20140061648A1 (en) * 2012-08-31 2014-03-06 David H. Levy Thin film transistor including dielectric stack
KR102335364B1 (ko) 2014-03-27 2021-12-06 쓰리엠 이노베이티브 프로퍼티즈 캄파니 오가노보란-함유 조성물, 및 그의 사용 방법
CN107887269A (zh) * 2017-11-03 2018-04-06 通威太阳能（安徽）有限公司 一种晶体硅太阳能电池刻蚀工艺
KR102820132B1 (ko) 2019-09-03 2025-06-12 고쿠리츠다이가쿠호우진 도쿄다이가쿠 유기 반도체 디바이스의 소스/드레인용 전극, 그것을 사용한 유기 반도체 디바이스, 및 그것들의 제조 방법

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CN101826563A (zh) * 2009-03-03 2010-09-08 E.I.内穆尔杜邦公司 封装材料和采用该封装材料形成的太阳能电池组件

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CN101681929A (zh) * 2007-05-30 2010-03-24 日产化学工业株式会社 薄膜晶体管用栅极绝缘膜形成剂
JP2009130368A (ja) * 2007-11-26 2009-06-11 Hitachi Ltd 有機電界効果トランジスタ
CN101359719A (zh) * 2008-09-11 2009-02-04 电子科技大学 一种有机薄膜晶体管及其制备方法
CN101826563A (zh) * 2009-03-03 2010-09-08 E.I.内穆尔杜邦公司 封装材料和采用该封装材料形成的太阳能电池组件

Also Published As

Publication number Publication date
JP2014502047A (ja) 2014-01-23
US8835915B2 (en) 2014-09-16
CN103222081A (zh) 2013-07-24
SG190340A1 (en) 2013-06-28
WO2012071243A3 (en) 2012-08-02
JP5931083B2 (ja) 2016-06-08
WO2012071243A2 (en) 2012-05-31
US20130256640A1 (en) 2013-10-03
EP2643864A2 (en) 2013-10-02

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