JP5916898B2 - 複数のインターポーザを伴うスタックドダイアセンブリ - Google Patents

複数のインターポーザを伴うスタックドダイアセンブリ Download PDF

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Publication number
JP5916898B2
JP5916898B2 JP2014556545A JP2014556545A JP5916898B2 JP 5916898 B2 JP5916898 B2 JP 5916898B2 JP 2014556545 A JP2014556545 A JP 2014556545A JP 2014556545 A JP2014556545 A JP 2014556545A JP 5916898 B2 JP5916898 B2 JP 5916898B2
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interposer
die
integrated circuit
interconnect
assembly
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Japanese (ja)
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JP2015507372A (ja
JP2015507372A5 (https=
Inventor
ウー,エフレム・シィ
バニジャマリ,バハレー
チャワレ,ラグフナンダン
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Xilinx Inc
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Xilinx Inc
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Priority claimed from US13/369,215 external-priority patent/US8704364B2/en
Priority claimed from US13/399,939 external-priority patent/US8704384B2/en
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Publication of JP2015507372A publication Critical patent/JP2015507372A/ja
Publication of JP2015507372A5 publication Critical patent/JP2015507372A5/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
    • H10W70/635Through-vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69Insulating materials thereof
    • H10W70/698Semiconductor materials that are electrically insulating, e.g. undoped silicon
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/401Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/681Shapes or dispositions thereof comprising holes not having chips therein, e.g. for outgassing, underfilling or bond wire passage
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07251Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H10W72/07254Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting changes in dispositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • H10W72/247Dispositions of multiple bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2014556545A 2012-02-08 2012-12-03 複数のインターポーザを伴うスタックドダイアセンブリ Active JP5916898B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13/369,215 2012-02-08
US13/369,215 US8704364B2 (en) 2012-02-08 2012-02-08 Reducing stress in multi-die integrated circuit structures
US13/399,939 2012-02-17
US13/399,939 US8704384B2 (en) 2012-02-17 2012-02-17 Stacked die assembly
PCT/US2012/067543 WO2013119309A1 (en) 2012-02-08 2012-12-03 Stacked die assembly with multiple interposers

Publications (3)

Publication Number Publication Date
JP2015507372A JP2015507372A (ja) 2015-03-05
JP2015507372A5 JP2015507372A5 (https=) 2015-12-24
JP5916898B2 true JP5916898B2 (ja) 2016-05-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014556545A Active JP5916898B2 (ja) 2012-02-08 2012-12-03 複数のインターポーザを伴うスタックドダイアセンブリ

Country Status (5)

Country Link
EP (1) EP2812919B1 (https=)
JP (1) JP5916898B2 (https=)
KR (1) KR101891862B1 (https=)
CN (1) CN104471708B (https=)
WO (1) WO2013119309A1 (https=)

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US12341096B2 (en) 2016-12-29 2025-06-24 Intel Corporation Bare-die smart bridge connected with copper pillars for system-in-package apparatus
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US11652060B2 (en) 2018-12-28 2023-05-16 Intel Corporation Die interconnection scheme for providing a high yielding process for high performance microprocessors
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US12080643B2 (en) * 2019-09-26 2024-09-03 Intel Corporation Integrated circuit structures having differentiated interconnect lines in a same dielectric layer
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US12255148B2 (en) * 2020-04-30 2025-03-18 Taiwan Semiconductor Manufacturing Company, Ltd. Power distribution structure and method
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Also Published As

Publication number Publication date
EP2812919B1 (en) 2021-07-07
WO2013119309A1 (en) 2013-08-15
CN104471708B (zh) 2017-05-24
EP2812919A1 (en) 2014-12-17
JP2015507372A (ja) 2015-03-05
CN104471708A (zh) 2015-03-25
KR101891862B1 (ko) 2018-08-24
KR20140111716A (ko) 2014-09-19

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