JP5910064B2 - 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 - Google Patents

光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 Download PDF

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Publication number
JP5910064B2
JP5910064B2 JP2011278883A JP2011278883A JP5910064B2 JP 5910064 B2 JP5910064 B2 JP 5910064B2 JP 2011278883 A JP2011278883 A JP 2011278883A JP 2011278883 A JP2011278883 A JP 2011278883A JP 5910064 B2 JP5910064 B2 JP 5910064B2
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conductive layer
layer
terahertz wave
semiconductor material
semiconductor
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Japanese (ja)
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JP2013131575A (ja
JP2013131575A5 (enExample
Inventor
紘斗 冨岡
紘斗 冨岡
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2011278883A priority Critical patent/JP5910064B2/ja
Priority to CN2012105484098A priority patent/CN103178431A/zh
Priority to US13/717,835 priority patent/US9306112B2/en
Publication of JP2013131575A publication Critical patent/JP2013131575A/ja
Publication of JP2013131575A5 publication Critical patent/JP2013131575A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
    • G01S13/88—Radar or analogous systems specially adapted for specific applications
    • G01S13/89—Radar or analogous systems specially adapted for specific applications for mapping or imaging

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Light Receiving Elements (AREA)
JP2011278883A 2011-12-20 2011-12-20 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 Active JP5910064B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011278883A JP5910064B2 (ja) 2011-12-20 2011-12-20 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置
CN2012105484098A CN103178431A (zh) 2011-12-20 2012-12-17 光导天线、太赫兹波发生装置、照相机、成像装置以及测量装置
US13/717,835 US9306112B2 (en) 2011-12-20 2012-12-18 Photoconductive antenna, terahertz wave generating device, camera, imaging device, and measuring device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011278883A JP5910064B2 (ja) 2011-12-20 2011-12-20 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置

Publications (3)

Publication Number Publication Date
JP2013131575A JP2013131575A (ja) 2013-07-04
JP2013131575A5 JP2013131575A5 (enExample) 2015-02-05
JP5910064B2 true JP5910064B2 (ja) 2016-04-27

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Country Link
US (1) US9306112B2 (enExample)
JP (1) JP5910064B2 (enExample)
CN (1) CN103178431A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5799538B2 (ja) * 2011-03-18 2015-10-28 セイコーエプソン株式会社 テラヘルツ波発生装置、カメラ、イメージング装置、計測装置および光源装置
JP5987346B2 (ja) * 2012-02-23 2016-09-07 セイコーエプソン株式会社 アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置、および計測装置
DK3039722T3 (da) 2013-08-29 2020-05-11 Hamamatsu Photonics Kk Detektion af terahertz-stråling
JP2015148541A (ja) * 2014-02-07 2015-08-20 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置
JP7208032B2 (ja) * 2019-01-28 2023-01-18 キヤノン株式会社 半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5264287A (en) * 1975-11-25 1977-05-27 Hitachi Ltd Group iii-v compound semiconductor element
DE2964810D1 (en) 1978-07-29 1983-03-24 Fujitsu Ltd A method of coating side walls of semiconductor devices
JPS5519854A (en) * 1978-07-29 1980-02-12 Fujitsu Ltd Formation of protective film
JPH0715979B2 (ja) * 1987-08-27 1995-02-22 三菱電機株式会社 超格子撮像素子
JP4278405B2 (ja) * 2003-02-28 2009-06-17 シャープ株式会社 酸化物半導体発光素子およびその製造方法
JP2006302919A (ja) * 2005-04-15 2006-11-02 Sony Corp 面発光型半導体レーザおよびその製造方法
JP2006313803A (ja) 2005-05-09 2006-11-16 Matsushita Electric Ind Co Ltd テラヘルツ電磁波発生装置
US8274058B1 (en) * 2006-01-25 2012-09-25 Sandia Corporation Integrated heterodyne terahertz transceiver
JP2007300022A (ja) * 2006-05-02 2007-11-15 Material Design Factory:Kk テラヘルツ波増幅装置、テラヘルツ波変調装置ならびにこれを用いた通信装置およびセンシング装置
CN101127432A (zh) * 2006-08-16 2008-02-20 中国科学院半导体研究所 太赫兹量子级联半导体激光器材料及其生长方法
JP5441469B2 (ja) * 2009-03-27 2014-03-12 キヤノン株式会社 共振器
KR101048717B1 (ko) 2010-01-19 2011-07-14 삼성전기주식회사 인쇄회로기판 스트립 및 전자소자 내장형 인쇄회로기판 제조방법
JP5582822B2 (ja) * 2010-02-26 2014-09-03 キヤノン株式会社 電磁波発生装置

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US20130153765A1 (en) 2013-06-20
JP2013131575A (ja) 2013-07-04
CN103178431A (zh) 2013-06-26
US9306112B2 (en) 2016-04-05

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