CN103178431A - 光导天线、太赫兹波发生装置、照相机、成像装置以及测量装置 - Google Patents
光导天线、太赫兹波发生装置、照相机、成像装置以及测量装置 Download PDFInfo
- Publication number
- CN103178431A CN103178431A CN2012105484098A CN201210548409A CN103178431A CN 103178431 A CN103178431 A CN 103178431A CN 2012105484098 A CN2012105484098 A CN 2012105484098A CN 201210548409 A CN201210548409 A CN 201210548409A CN 103178431 A CN103178431 A CN 103178431A
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- Prior art keywords
- terahertz wave
- photoconductive antenna
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- conductive layer
- semiconductor layer
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- 238000003384 imaging method Methods 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 154
- 239000000463 material Substances 0.000 claims abstract description 38
- 239000003989 dielectric material Substances 0.000 claims abstract description 10
- 238000001514 detection method Methods 0.000 claims description 64
- 238000005259 measurement Methods 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 abstract description 5
- 238000003475 lamination Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 260
- 239000000758 substrate Substances 0.000 description 33
- 230000003287 optical effect Effects 0.000 description 32
- 230000006835 compression Effects 0.000 description 24
- 238000007906 compression Methods 0.000 description 24
- 238000005253 cladding Methods 0.000 description 23
- 239000000126 substance Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 12
- 238000009826 distribution Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- -1 For example Substances 0.000 description 3
- OMOVVBIIQSXZSZ-UHFFFAOYSA-N [6-(4-acetyloxy-5,9a-dimethyl-2,7-dioxo-4,5a,6,9-tetrahydro-3h-pyrano[3,4-b]oxepin-5-yl)-5-formyloxy-3-(furan-3-yl)-3a-methyl-7-methylidene-1a,2,3,4,5,6-hexahydroindeno[1,7a-b]oxiren-4-yl] 2-hydroxy-3-methylpentanoate Chemical compound CC12C(OC(=O)C(O)C(C)CC)C(OC=O)C(C3(C)C(CC(=O)OC4(C)COC(=O)CC43)OC(C)=O)C(=C)C32OC3CC1C=1C=COC=1 OMOVVBIIQSXZSZ-UHFFFAOYSA-N 0.000 description 3
- 238000000701 chemical imaging Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- BGECDVWSWDRFSP-UHFFFAOYSA-N borazine Chemical compound B1NBNBN1 BGECDVWSWDRFSP-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
- G01S13/88—Radar or analogous systems specially adapted for specific applications
- G01S13/89—Radar or analogous systems specially adapted for specific applications for mapping or imaging
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-278883 | 2011-12-20 | ||
| JP2011278883A JP5910064B2 (ja) | 2011-12-20 | 2011-12-20 | 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103178431A true CN103178431A (zh) | 2013-06-26 |
Family
ID=48609171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012105484098A Pending CN103178431A (zh) | 2011-12-20 | 2012-12-17 | 光导天线、太赫兹波发生装置、照相机、成像装置以及测量装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9306112B2 (enExample) |
| JP (1) | JP5910064B2 (enExample) |
| CN (1) | CN103178431A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104836098A (zh) * | 2014-02-07 | 2015-08-12 | 精工爱普生株式会社 | 光导天线、拍摄装置、成像装置以及测量装置 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5799538B2 (ja) * | 2011-03-18 | 2015-10-28 | セイコーエプソン株式会社 | テラヘルツ波発生装置、カメラ、イメージング装置、計測装置および光源装置 |
| JP5987346B2 (ja) * | 2012-02-23 | 2016-09-07 | セイコーエプソン株式会社 | アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置、および計測装置 |
| EP3039722B1 (en) | 2013-08-29 | 2020-03-18 | Hamamatsu Photonics K.K. | Detection of terahertz radiation |
| JP7208032B2 (ja) * | 2019-01-28 | 2023-01-18 | キヤノン株式会社 | 半導体装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4933731A (en) * | 1987-08-27 | 1990-06-12 | Mitsubishi Denki Kabushiki Kaisha | Superlattice imaging device |
| JP2007300022A (ja) * | 2006-05-02 | 2007-11-15 | Material Design Factory:Kk | テラヘルツ波増幅装置、テラヘルツ波変調装置ならびにこれを用いた通信装置およびセンシング装置 |
| CN101127432A (zh) * | 2006-08-16 | 2008-02-20 | 中国科学院半导体研究所 | 太赫兹量子级联半导体激光器材料及其生长方法 |
| US20100244993A1 (en) * | 2009-03-27 | 2010-09-30 | Canon Kabushiki Kaisha | Resonator |
| US20110210260A1 (en) * | 2010-02-26 | 2011-09-01 | Canon Kabushiki Kaisha | Electromagentic-wave generation device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5264287A (en) * | 1975-11-25 | 1977-05-27 | Hitachi Ltd | Group iii-v compound semiconductor element |
| JPS5519854A (en) * | 1978-07-29 | 1980-02-12 | Fujitsu Ltd | Formation of protective film |
| DE2964810D1 (en) | 1978-07-29 | 1983-03-24 | Fujitsu Ltd | A method of coating side walls of semiconductor devices |
| JP4278405B2 (ja) * | 2003-02-28 | 2009-06-17 | シャープ株式会社 | 酸化物半導体発光素子およびその製造方法 |
| JP2006302919A (ja) * | 2005-04-15 | 2006-11-02 | Sony Corp | 面発光型半導体レーザおよびその製造方法 |
| JP2006313803A (ja) | 2005-05-09 | 2006-11-16 | Matsushita Electric Ind Co Ltd | テラヘルツ電磁波発生装置 |
| US8274058B1 (en) * | 2006-01-25 | 2012-09-25 | Sandia Corporation | Integrated heterodyne terahertz transceiver |
| KR101048717B1 (ko) | 2010-01-19 | 2011-07-14 | 삼성전기주식회사 | 인쇄회로기판 스트립 및 전자소자 내장형 인쇄회로기판 제조방법 |
-
2011
- 2011-12-20 JP JP2011278883A patent/JP5910064B2/ja active Active
-
2012
- 2012-12-17 CN CN2012105484098A patent/CN103178431A/zh active Pending
- 2012-12-18 US US13/717,835 patent/US9306112B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4933731A (en) * | 1987-08-27 | 1990-06-12 | Mitsubishi Denki Kabushiki Kaisha | Superlattice imaging device |
| JP2007300022A (ja) * | 2006-05-02 | 2007-11-15 | Material Design Factory:Kk | テラヘルツ波増幅装置、テラヘルツ波変調装置ならびにこれを用いた通信装置およびセンシング装置 |
| CN101127432A (zh) * | 2006-08-16 | 2008-02-20 | 中国科学院半导体研究所 | 太赫兹量子级联半导体激光器材料及其生长方法 |
| US20100244993A1 (en) * | 2009-03-27 | 2010-09-30 | Canon Kabushiki Kaisha | Resonator |
| US20110210260A1 (en) * | 2010-02-26 | 2011-09-01 | Canon Kabushiki Kaisha | Electromagentic-wave generation device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104836098A (zh) * | 2014-02-07 | 2015-08-12 | 精工爱普生株式会社 | 光导天线、拍摄装置、成像装置以及测量装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20130153765A1 (en) | 2013-06-20 |
| JP5910064B2 (ja) | 2016-04-27 |
| US9306112B2 (en) | 2016-04-05 |
| JP2013131575A (ja) | 2013-07-04 |
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Application publication date: 20130626 |