JPS5519854A - Formation of protective film - Google Patents

Formation of protective film

Info

Publication number
JPS5519854A
JPS5519854A JP9277778A JP9277778A JPS5519854A JP S5519854 A JPS5519854 A JP S5519854A JP 9277778 A JP9277778 A JP 9277778A JP 9277778 A JP9277778 A JP 9277778A JP S5519854 A JPS5519854 A JP S5519854A
Authority
JP
Japan
Prior art keywords
protective film
semiconductor
ions
formation
arrow direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9277778A
Other languages
Japanese (ja)
Other versions
JPS5628015B2 (en
Inventor
Hajime Imai
Masahiro Morimoto
Takao Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9277778A priority Critical patent/JPS5519854A/en
Priority to DE7979301493T priority patent/DE2964810D1/en
Priority to EP79301493A priority patent/EP0007805B1/en
Publication of JPS5519854A publication Critical patent/JPS5519854A/en
Priority to US06/223,152 priority patent/US4356210A/en
Publication of JPS5628015B2 publication Critical patent/JPS5628015B2/ja
Priority to US06/389,916 priority patent/US4435443A/en
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: For forming protective film only on the side faces of semiconductors, to make spatter etching of protective film forming material by applying ions thereon by means of the semiconductor placed on said material.
CONSTITUTION: Semiconductor 2 such as semiconductor laser for example is placed with one electrode thereof downward on protective film material such as silicon dioxide, and iactive gas, such as argon ions, is applied in solid line arrow direction. Then, said protective material 1 is subjected to te spatter etching that is made by the collapse of ions so that a part of the fine particles thereof scatter in broken line arrow direction and attach to the side face 2B of said semiconductor 2 to form protective film only on said side face 2B. Thus, protective film can be formed selectively only on said faces without requiring the provision of mask on said semiconductor or working after the formation thereof.
COPYRIGHT: (C)1980,JPO&Japio
JP9277778A 1978-07-29 1978-07-29 Formation of protective film Granted JPS5519854A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP9277778A JPS5519854A (en) 1978-07-29 1978-07-29 Formation of protective film
DE7979301493T DE2964810D1 (en) 1978-07-29 1979-07-26 A method of coating side walls of semiconductor devices
EP79301493A EP0007805B1 (en) 1978-07-29 1979-07-26 A method of coating side walls of semiconductor devices
US06/223,152 US4356210A (en) 1978-07-29 1981-01-07 Method for forming a protecting film on side walls of a semiconductor device
US06/389,916 US4435443A (en) 1978-07-29 1982-06-18 Method for forming a protecting film on side walls of a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9277778A JPS5519854A (en) 1978-07-29 1978-07-29 Formation of protective film

Publications (2)

Publication Number Publication Date
JPS5519854A true JPS5519854A (en) 1980-02-12
JPS5628015B2 JPS5628015B2 (en) 1981-06-29

Family

ID=14063843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9277778A Granted JPS5519854A (en) 1978-07-29 1978-07-29 Formation of protective film

Country Status (1)

Country Link
JP (1) JPS5519854A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013131575A (en) * 2011-12-20 2013-07-04 Seiko Epson Corp Photoconduction antenna, terahertz wave generation apparatus, camera, imaging device, and measurement device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013131575A (en) * 2011-12-20 2013-07-04 Seiko Epson Corp Photoconduction antenna, terahertz wave generation apparatus, camera, imaging device, and measurement device
US9306112B2 (en) 2011-12-20 2016-04-05 Seiko Epson Corporation Photoconductive antenna, terahertz wave generating device, camera, imaging device, and measuring device

Also Published As

Publication number Publication date
JPS5628015B2 (en) 1981-06-29

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