JPS5519854A - Formation of protective film - Google Patents
Formation of protective filmInfo
- Publication number
- JPS5519854A JPS5519854A JP9277778A JP9277778A JPS5519854A JP S5519854 A JPS5519854 A JP S5519854A JP 9277778 A JP9277778 A JP 9277778A JP 9277778 A JP9277778 A JP 9277778A JP S5519854 A JPS5519854 A JP S5519854A
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- semiconductor
- ions
- formation
- arrow direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: For forming protective film only on the side faces of semiconductors, to make spatter etching of protective film forming material by applying ions thereon by means of the semiconductor placed on said material.
CONSTITUTION: Semiconductor 2 such as semiconductor laser for example is placed with one electrode thereof downward on protective film material such as silicon dioxide, and iactive gas, such as argon ions, is applied in solid line arrow direction. Then, said protective material 1 is subjected to te spatter etching that is made by the collapse of ions so that a part of the fine particles thereof scatter in broken line arrow direction and attach to the side face 2B of said semiconductor 2 to form protective film only on said side face 2B. Thus, protective film can be formed selectively only on said faces without requiring the provision of mask on said semiconductor or working after the formation thereof.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9277778A JPS5519854A (en) | 1978-07-29 | 1978-07-29 | Formation of protective film |
DE7979301493T DE2964810D1 (en) | 1978-07-29 | 1979-07-26 | A method of coating side walls of semiconductor devices |
EP79301493A EP0007805B1 (en) | 1978-07-29 | 1979-07-26 | A method of coating side walls of semiconductor devices |
US06/223,152 US4356210A (en) | 1978-07-29 | 1981-01-07 | Method for forming a protecting film on side walls of a semiconductor device |
US06/389,916 US4435443A (en) | 1978-07-29 | 1982-06-18 | Method for forming a protecting film on side walls of a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9277778A JPS5519854A (en) | 1978-07-29 | 1978-07-29 | Formation of protective film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5519854A true JPS5519854A (en) | 1980-02-12 |
JPS5628015B2 JPS5628015B2 (en) | 1981-06-29 |
Family
ID=14063843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9277778A Granted JPS5519854A (en) | 1978-07-29 | 1978-07-29 | Formation of protective film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5519854A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013131575A (en) * | 2011-12-20 | 2013-07-04 | Seiko Epson Corp | Photoconduction antenna, terahertz wave generation apparatus, camera, imaging device, and measurement device |
-
1978
- 1978-07-29 JP JP9277778A patent/JPS5519854A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013131575A (en) * | 2011-12-20 | 2013-07-04 | Seiko Epson Corp | Photoconduction antenna, terahertz wave generation apparatus, camera, imaging device, and measurement device |
US9306112B2 (en) | 2011-12-20 | 2016-04-05 | Seiko Epson Corporation | Photoconductive antenna, terahertz wave generating device, camera, imaging device, and measuring device |
Also Published As
Publication number | Publication date |
---|---|
JPS5628015B2 (en) | 1981-06-29 |
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