JP5907514B2 - プロセス変動および電源変調の正確なバイアス追跡 - Google Patents

プロセス変動および電源変調の正確なバイアス追跡 Download PDF

Info

Publication number
JP5907514B2
JP5907514B2 JP2013545532A JP2013545532A JP5907514B2 JP 5907514 B2 JP5907514 B2 JP 5907514B2 JP 2013545532 A JP2013545532 A JP 2013545532A JP 2013545532 A JP2013545532 A JP 2013545532A JP 5907514 B2 JP5907514 B2 JP 5907514B2
Authority
JP
Japan
Prior art keywords
transistor
coupled
node
voltage
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013545532A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014502119A5 (enExample
JP2014502119A (ja
Inventor
ブーン レオン ポー
ブーン レオン ポー
クマール クリシュナサミ マニアム ヌンタ
クマール クリシュナサミ マニアム ヌンタ
Original Assignee
マーベル ワールド トレード リミテッド
マーベル ワールド トレード リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by マーベル ワールド トレード リミテッド, マーベル ワールド トレード リミテッド filed Critical マーベル ワールド トレード リミテッド
Publication of JP2014502119A publication Critical patent/JP2014502119A/ja
Publication of JP2014502119A5 publication Critical patent/JP2014502119A5/ja
Application granted granted Critical
Publication of JP5907514B2 publication Critical patent/JP5907514B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/555—A voltage generating circuit being realised for biasing different circuit elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45294—Indexing scheme relating to differential amplifiers the AAC comprising biasing means to stabilise itself
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45301—Indexing scheme relating to differential amplifiers there are multiple cascaded folded or not folded common gate stages of a cascode dif amp
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45304—Indexing scheme relating to differential amplifiers the common gate stage of a BIFET cascode dif amp being implemented fully by FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45311—Indexing scheme relating to differential amplifiers the common gate stage of a cascode dif amp being implemented by multiple transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45352—Indexing scheme relating to differential amplifiers the AAC comprising a combination of a plurality of transistors, e.g. Darlington coupled transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45544—Indexing scheme relating to differential amplifiers the IC comprising one or more capacitors, e.g. coupling capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45554—Indexing scheme relating to differential amplifiers the IC comprising one or more coils

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
JP2013545532A 2010-12-23 2011-12-20 プロセス変動および電源変調の正確なバイアス追跡 Expired - Fee Related JP5907514B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201061426740P 2010-12-23 2010-12-23
US61/426,740 2010-12-23
PCT/IB2011/003331 WO2012085685A2 (en) 2010-12-23 2011-12-20 Accurate bias tracking for process variation and supply modulation

Publications (3)

Publication Number Publication Date
JP2014502119A JP2014502119A (ja) 2014-01-23
JP2014502119A5 JP2014502119A5 (enExample) 2015-02-05
JP5907514B2 true JP5907514B2 (ja) 2016-04-26

Family

ID=45812810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013545532A Expired - Fee Related JP5907514B2 (ja) 2010-12-23 2011-12-20 プロセス変動および電源変調の正確なバイアス追跡

Country Status (6)

Country Link
US (2) US8514023B2 (enExample)
EP (1) EP2656163A2 (enExample)
JP (1) JP5907514B2 (enExample)
KR (1) KR101761308B1 (enExample)
CN (1) CN103270465B (enExample)
WO (1) WO2012085685A2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8791759B2 (en) * 2011-03-22 2014-07-29 The United States Of America As Represented By The Secretary Of The Army Bipolar stacked transistor architecture
US9148140B1 (en) * 2012-09-27 2015-09-29 Maxim Integrated Systems, Inc. Integrated circuit with precision current source
US9774324B2 (en) * 2014-12-05 2017-09-26 Intel Corporation Biasing scheme for high voltage circuits using low voltage devices
US9806678B2 (en) * 2015-06-29 2017-10-31 Eridan Communications, Inc. Bootstrap class-D wideband RF power amplifier
US20180061984A1 (en) * 2016-08-29 2018-03-01 Macom Technology Solutions Holdings, Inc. Self-biasing and self-sequencing of depletion-mode transistors
US10128835B2 (en) * 2017-02-20 2018-11-13 Stmicroelectronics International N.V. Aging tolerant I/O driver
JP6630303B2 (ja) * 2017-02-24 2020-01-15 株式会社東芝 高周波半導体増幅回路
US9948252B1 (en) * 2017-04-06 2018-04-17 Psemi Corporation Device stack with novel gate capacitor topology
US10250999B1 (en) * 2017-09-18 2019-04-02 Infineon Technologies Ag PVT compensated resistive biasing architecture for a capacitive sensor
US10224922B1 (en) * 2018-04-04 2019-03-05 Stmicroelectronics International N.V. Biasing cascode transistor of an output buffer circuit for operation over a wide range of supply voltages
US10404265B1 (en) * 2018-08-30 2019-09-03 Xilinx, Inc. Current-mode feedback source follower with enhanced linearity
WO2021025197A1 (ko) * 2019-08-06 2021-02-11 엘지전자 주식회사 롤-슬라이드 이동 단말기
US11262782B2 (en) * 2020-04-29 2022-03-01 Analog Devices, Inc. Current mirror arrangements with semi-cascoding
CN113268103A (zh) * 2021-04-27 2021-08-17 上海萍生微电子科技有限公司 一种电流镜电路及其射频模块
US11971736B2 (en) * 2022-02-16 2024-04-30 Sandisk Technologies Llc Current mirror circuits
CN116996028B (zh) * 2023-08-10 2024-10-15 无锡华睿芯微电子科技有限公司 单电源供电、脉冲控制的开关功率放大器及放大器芯片
CN116915187B (zh) * 2023-09-14 2023-12-15 宜确半导体（苏州）有限公司 一种射频功率放大器的功率控制电路及射频功率放大器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5644208A (en) * 1979-09-19 1981-04-23 Toshiba Corp Amplifier
JPS58108808A (ja) * 1981-12-23 1983-06-29 Toshiba Corp プツシユプル増幅器
JPH073646B2 (ja) * 1989-08-03 1995-01-18 ローム株式会社 定電流回路
JPH07175536A (ja) * 1993-12-17 1995-07-14 Toshiba Corp カレントミラー回路
US6064267A (en) * 1998-10-05 2000-05-16 Globespan, Inc. Current mirror utilizing amplifier to match operating voltages of input and output transconductance devices
US6714081B1 (en) * 2002-09-11 2004-03-30 Motorola, Inc. Active current bias network for compensating hot-carrier injection induced bias drift
US7304539B2 (en) * 2003-10-16 2007-12-04 Renesas Technology Corporation High frequency power amplifier circuit and electronic component for high frequency power amplifier
JP4575818B2 (ja) * 2005-03-24 2010-11-04 Ｏｋｉセミコンダクタ株式会社 増幅回路用バイアス回路
US8093952B2 (en) * 2006-12-29 2012-01-10 Broadcom Corporation Method and system for precise current matching in deep sub-micron technology
JP2008236339A (ja) 2007-03-20 2008-10-02 Toshiba Corp 半導体集積回路
US8786359B2 (en) * 2007-12-12 2014-07-22 Sandisk Technologies Inc. Current mirror device and method
US8035443B2 (en) * 2008-06-20 2011-10-11 Qualcomm, Incorporated Amplifier with gain expansion stage
US8203383B2 (en) * 2008-11-24 2012-06-19 Texas Instruments Incorporated Reducing the effect of bulk leakage currents
US8233871B2 (en) 2009-06-16 2012-07-31 California Institute Of Technology Incompressible RF receiver

Also Published As

Publication number Publication date
US8878612B2 (en) 2014-11-04
WO2012085685A2 (en) 2012-06-28
CN103270465A (zh) 2013-08-28
JP2014502119A (ja) 2014-01-23
KR20130130764A (ko) 2013-12-02
KR101761308B1 (ko) 2017-07-25
WO2012085685A8 (en) 2013-06-27
US8514023B2 (en) 2013-08-20
US20130300506A1 (en) 2013-11-14
US20120161876A1 (en) 2012-06-28
WO2012085685A3 (en) 2013-05-10
EP2656163A2 (en) 2013-10-30
CN103270465B (zh) 2016-07-20

Similar Documents

Publication Publication Date Title
JP5907514B2 (ja) プロセス変動および電源変調の正確なバイアス追跡
US9225351B2 (en) Current amplifier circuit, integrator, and ad converter
US8841970B2 (en) Low GM transconductor
JP5415623B2 (ja) 増幅器バイアス技術
CN107431462B (zh) 具有低静态电流变化的推挽电压驱动器
US7876152B2 (en) High-impedance level-shifting amplifier capable of handling input signals with a voltage magnitude that exceeds a supply voltage
US7576609B1 (en) Preamplifier for receiver and method thereof
US20120188016A1 (en) Circuitry for biasing amplifiers
US7042256B2 (en) Voice coil motor power amplifier
US11545936B2 (en) Amplifier biasing techniques
CN114157253A (zh) 运算放大器
US10270392B1 (en) Low-power differential amplifier with improved unity gain frequency
JP2000278058A (ja) 増幅回路
US6831501B1 (en) Common-mode controlled differential gain boosting
US11031158B2 (en) Continuously variable precision and linear floating resistor using metal-oxide-semiconductor field-effect transistors
JP4862694B2 (ja) Ｆｅｔアンプおよびそのバイアス回路
JP4072148B2 (ja) 演算増幅器
US6930542B1 (en) Differential gain boosting
JP2002217692A (ja) 電圧比較器
CN120377836A (zh) 使用经调制信号修整电阻器
KR20130067144A (ko) 기준전압 구동회로

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141211

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141211

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20151027

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20151104

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160201

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160223

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160315

R150 Certificate of patent or registration of utility model

Ref document number: 5907514

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees