JP2014502119A5 - - Google Patents

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Publication number
JP2014502119A5
JP2014502119A5 JP2013545532A JP2013545532A JP2014502119A5 JP 2014502119 A5 JP2014502119 A5 JP 2014502119A5 JP 2013545532 A JP2013545532 A JP 2013545532A JP 2013545532 A JP2013545532 A JP 2013545532A JP 2014502119 A5 JP2014502119 A5 JP 2014502119A5
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JP
Japan
Prior art keywords
transistor
coupled
gate
source
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013545532A
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English (en)
Japanese (ja)
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JP2014502119A (ja
JP5907514B2 (ja
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Application filed filed Critical
Priority claimed from PCT/IB2011/003331 external-priority patent/WO2012085685A2/en
Publication of JP2014502119A publication Critical patent/JP2014502119A/ja
Publication of JP2014502119A5 publication Critical patent/JP2014502119A5/ja
Application granted granted Critical
Publication of JP5907514B2 publication Critical patent/JP5907514B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013545532A 2010-12-23 2011-12-20 プロセス変動および電源変調の正確なバイアス追跡 Expired - Fee Related JP5907514B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201061426740P 2010-12-23 2010-12-23
US61/426,740 2010-12-23
PCT/IB2011/003331 WO2012085685A2 (en) 2010-12-23 2011-12-20 Accurate bias tracking for process variation and supply modulation

Publications (3)

Publication Number Publication Date
JP2014502119A JP2014502119A (ja) 2014-01-23
JP2014502119A5 true JP2014502119A5 (enExample) 2015-02-05
JP5907514B2 JP5907514B2 (ja) 2016-04-26

Family

ID=45812810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013545532A Expired - Fee Related JP5907514B2 (ja) 2010-12-23 2011-12-20 プロセス変動および電源変調の正確なバイアス追跡

Country Status (6)

Country Link
US (2) US8514023B2 (enExample)
EP (1) EP2656163A2 (enExample)
JP (1) JP5907514B2 (enExample)
KR (1) KR101761308B1 (enExample)
CN (1) CN103270465B (enExample)
WO (1) WO2012085685A2 (enExample)

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US8791759B2 (en) * 2011-03-22 2014-07-29 The United States Of America As Represented By The Secretary Of The Army Bipolar stacked transistor architecture
US9148140B1 (en) * 2012-09-27 2015-09-29 Maxim Integrated Systems, Inc. Integrated circuit with precision current source
US9774324B2 (en) * 2014-12-05 2017-09-26 Intel Corporation Biasing scheme for high voltage circuits using low voltage devices
US9806678B2 (en) * 2015-06-29 2017-10-31 Eridan Communications, Inc. Bootstrap class-D wideband RF power amplifier
US20180061984A1 (en) * 2016-08-29 2018-03-01 Macom Technology Solutions Holdings, Inc. Self-biasing and self-sequencing of depletion-mode transistors
US10128835B2 (en) * 2017-02-20 2018-11-13 Stmicroelectronics International N.V. Aging tolerant I/O driver
JP6630303B2 (ja) * 2017-02-24 2020-01-15 株式会社東芝 高周波半導体増幅回路
US9948252B1 (en) * 2017-04-06 2018-04-17 Psemi Corporation Device stack with novel gate capacitor topology
US10250999B1 (en) * 2017-09-18 2019-04-02 Infineon Technologies Ag PVT compensated resistive biasing architecture for a capacitive sensor
US10224922B1 (en) * 2018-04-04 2019-03-05 Stmicroelectronics International N.V. Biasing cascode transistor of an output buffer circuit for operation over a wide range of supply voltages
US10404265B1 (en) * 2018-08-30 2019-09-03 Xilinx, Inc. Current-mode feedback source follower with enhanced linearity
KR102718469B1 (ko) * 2019-08-06 2024-10-17 엘지전자 주식회사 롤-슬라이드 이동 단말기
US11262782B2 (en) * 2020-04-29 2022-03-01 Analog Devices, Inc. Current mirror arrangements with semi-cascoding
CN113268103A (zh) * 2021-04-27 2021-08-17 上海萍生微电子科技有限公司 一种电流镜电路及其射频模块
US11971736B2 (en) * 2022-02-16 2024-04-30 Sandisk Technologies Llc Current mirror circuits
CN116996028B (zh) * 2023-08-10 2024-10-15 无锡华睿芯微电子科技有限公司 单电源供电、脉冲控制的开关功率放大器及放大器芯片
CN116915187B (zh) * 2023-09-14 2023-12-15 宜确半导体（苏州）有限公司 一种射频功率放大器的功率控制电路及射频功率放大器

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JPS5644208A (en) * 1979-09-19 1981-04-23 Toshiba Corp Amplifier
JPS58108808A (ja) * 1981-12-23 1983-06-29 Toshiba Corp プツシユプル増幅器
JPH073646B2 (ja) * 1989-08-03 1995-01-18 ローム株式会社 定電流回路
JPH07175536A (ja) * 1993-12-17 1995-07-14 Toshiba Corp カレントミラー回路
US6064267A (en) * 1998-10-05 2000-05-16 Globespan, Inc. Current mirror utilizing amplifier to match operating voltages of input and output transconductance devices
US6714081B1 (en) 2002-09-11 2004-03-30 Motorola, Inc. Active current bias network for compensating hot-carrier injection induced bias drift
US7304539B2 (en) * 2003-10-16 2007-12-04 Renesas Technology Corporation High frequency power amplifier circuit and electronic component for high frequency power amplifier
JP4575818B2 (ja) * 2005-03-24 2010-11-04 Ｏｋｉセミコンダクタ株式会社 増幅回路用バイアス回路
US8093952B2 (en) * 2006-12-29 2012-01-10 Broadcom Corporation Method and system for precise current matching in deep sub-micron technology
JP2008236339A (ja) 2007-03-20 2008-10-02 Toshiba Corp 半導体集積回路
US8786359B2 (en) * 2007-12-12 2014-07-22 Sandisk Technologies Inc. Current mirror device and method
US8035443B2 (en) * 2008-06-20 2011-10-11 Qualcomm, Incorporated Amplifier with gain expansion stage
US8203383B2 (en) * 2008-11-24 2012-06-19 Texas Instruments Incorporated Reducing the effect of bulk leakage currents
US8233871B2 (en) 2009-06-16 2012-07-31 California Institute Of Technology Incompressible RF receiver

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