JP5897926B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP5897926B2
JP5897926B2 JP2012034643A JP2012034643A JP5897926B2 JP 5897926 B2 JP5897926 B2 JP 5897926B2 JP 2012034643 A JP2012034643 A JP 2012034643A JP 2012034643 A JP2012034643 A JP 2012034643A JP 5897926 B2 JP5897926 B2 JP 5897926B2
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JP
Japan
Prior art keywords
silicon substrate
conductive film
single crystal
semiconductor layer
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012034643A
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English (en)
Japanese (ja)
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JP2012191187A5 (enExample
JP2012191187A (ja
Inventor
山崎　舜平
舜平 山崎
史人 井坂
史人 井坂
治朗 西田
治朗 西田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2012034643A priority Critical patent/JP5897926B2/ja
Publication of JP2012191187A publication Critical patent/JP2012191187A/ja
Publication of JP2012191187A5 publication Critical patent/JP2012191187A5/ja
Application granted granted Critical
Publication of JP5897926B2 publication Critical patent/JP5897926B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
JP2012034643A 2011-02-21 2012-02-21 光電変換装置 Expired - Fee Related JP5897926B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012034643A JP5897926B2 (ja) 2011-02-21 2012-02-21 光電変換装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011034575 2011-02-21
JP2011034575 2011-02-21
JP2012034643A JP5897926B2 (ja) 2011-02-21 2012-02-21 光電変換装置

Publications (3)

Publication Number Publication Date
JP2012191187A JP2012191187A (ja) 2012-10-04
JP2012191187A5 JP2012191187A5 (enExample) 2015-03-05
JP5897926B2 true JP5897926B2 (ja) 2016-04-06

Family

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Family Applications (1)

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JP2012034643A Expired - Fee Related JP5897926B2 (ja) 2011-02-21 2012-02-21 光電変換装置

Country Status (2)

Country Link
US (1) US9437758B2 (enExample)
JP (1) JP5897926B2 (enExample)

Families Citing this family (12)

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JP5640948B2 (ja) * 2011-10-18 2014-12-17 三菱電機株式会社 太陽電池
JP5824618B2 (ja) * 2013-03-01 2015-11-25 パナソニックＩｐマネジメント株式会社 シリコン基板
WO2014162979A1 (ja) * 2013-04-01 2014-10-09 シャープ株式会社 光電変換装置
CN105409010A (zh) * 2013-05-10 2016-03-16 Rct解决方案有限责任公司 太阳能电池及其制备方法
CN105164819B (zh) * 2013-05-14 2017-03-29 三菱电机株式会社 光伏发电元件及其制造方法
CN107431100B (zh) * 2015-03-31 2019-05-10 松下知识产权经营株式会社 太阳能电池元件、太阳能电池组件、以及制造方法
WO2017154384A1 (ja) * 2016-03-10 2017-09-14 株式会社カネカ 太陽電池モジュール
EP3591717A1 (en) * 2017-03-31 2020-01-08 Kaneka Corporation Solar cell, solar cell module, and solar cell manufacturing method
CN109638103A (zh) * 2018-06-05 2019-04-16 中智(泰兴)电力科技有限公司 单晶硅异质结太阳电池用两面差异化绒面结构及制备方法
GB202020727D0 (en) * 2020-12-30 2021-02-10 Rec Solar Pte Ltd Solar cell
CN119497449A (zh) * 2024-11-11 2025-02-21 安徽华晟新能源科技股份有限公司 光伏电池及其制备方法

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Publication number Publication date
US20120211066A1 (en) 2012-08-23
US9437758B2 (en) 2016-09-06
JP2012191187A (ja) 2012-10-04

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