JP5893387B2 - 電子装置及びその製造方法 - Google Patents

電子装置及びその製造方法 Download PDF

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Publication number
JP5893387B2
JP5893387B2 JP2011280907A JP2011280907A JP5893387B2 JP 5893387 B2 JP5893387 B2 JP 5893387B2 JP 2011280907 A JP2011280907 A JP 2011280907A JP 2011280907 A JP2011280907 A JP 2011280907A JP 5893387 B2 JP5893387 B2 JP 5893387B2
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JP
Japan
Prior art keywords
wiring board
component mounting
resin
solder
region
Prior art date
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Active
Application number
JP2011280907A
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English (en)
Japanese (ja)
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JP2013131669A5 (https=
JP2013131669A (ja
Inventor
肇 飯塚
肇 飯塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2011280907A priority Critical patent/JP5893387B2/ja
Priority to US13/719,843 priority patent/US8994134B2/en
Publication of JP2013131669A publication Critical patent/JP2013131669A/ja
Publication of JP2013131669A5 publication Critical patent/JP2013131669A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
JP2011280907A 2011-12-22 2011-12-22 電子装置及びその製造方法 Active JP5893387B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011280907A JP5893387B2 (ja) 2011-12-22 2011-12-22 電子装置及びその製造方法
US13/719,843 US8994134B2 (en) 2011-12-22 2012-12-19 Electronic device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011280907A JP5893387B2 (ja) 2011-12-22 2011-12-22 電子装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2013131669A JP2013131669A (ja) 2013-07-04
JP2013131669A5 JP2013131669A5 (https=) 2014-09-18
JP5893387B2 true JP5893387B2 (ja) 2016-03-23

Family

ID=48653705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011280907A Active JP5893387B2 (ja) 2011-12-22 2011-12-22 電子装置及びその製造方法

Country Status (2)

Country Link
US (1) US8994134B2 (https=)
JP (1) JP5893387B2 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI562295B (en) 2012-07-31 2016-12-11 Mediatek Inc Semiconductor package and method for fabricating base for semiconductor package
US10991669B2 (en) 2012-07-31 2021-04-27 Mediatek Inc. Semiconductor package using flip-chip technology
JP6415365B2 (ja) 2014-03-28 2018-10-31 株式会社ジェイデバイス 半導体パッケージ
US9576922B2 (en) * 2015-05-04 2017-02-21 Globalfoundries Inc. Silver alloying post-chip join
JP6591234B2 (ja) * 2015-08-21 2019-10-16 ルネサスエレクトロニクス株式会社 半導体装置
EP3154084A3 (en) * 2015-09-16 2017-04-26 MediaTek Inc. Semiconductor package using flip-chip technology
JP6662002B2 (ja) * 2015-11-27 2020-03-11 富士電機株式会社 半導体装置
US10679930B2 (en) 2015-11-30 2020-06-09 Hana Micron Inc. Metal core solder ball interconnector fan-out wafer level package
KR101830938B1 (ko) * 2015-11-30 2018-04-04 하나 마이크론(주) 메탈 코어 솔더 볼 인터커넥터 팬-아웃 웨이퍼 레벨 패키지
TWI721469B (zh) * 2019-06-25 2021-03-11 欣興電子股份有限公司 堆疊結構及其製造方法
JP7251951B2 (ja) * 2018-11-13 2023-04-04 新光電気工業株式会社 半導体装置及び半導体装置の製造方法
CN112153799A (zh) * 2019-06-27 2020-12-29 欣兴电子股份有限公司 堆叠结构及其制造方法
US12051655B2 (en) * 2021-07-16 2024-07-30 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and method of forming the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001119006A (ja) * 1999-10-19 2001-04-27 Sony Corp 撮像デバイス及びその製造方法
JP2002261582A (ja) * 2000-10-04 2002-09-13 Matsushita Electric Ind Co Ltd 弾性表面波デバイスおよびその製造方法ならびにそれを用いた回路モジュール
JP2005340317A (ja) * 2004-05-25 2005-12-08 Sony Corp 半導体パッケージの製造方法、半導体パッケージ、および半導体パッケージの製造装置
JP2007059470A (ja) * 2005-08-22 2007-03-08 Sony Corp 半導体装置およびその製造方法
JP4184371B2 (ja) * 2005-10-03 2008-11-19 日本テキサス・インスツルメンツ株式会社 半導体チップ、半導体装置およびそれらの製造方法
US7989707B2 (en) 2005-12-14 2011-08-02 Shinko Electric Industries Co., Ltd. Chip embedded substrate and method of producing the same
JP2008294333A (ja) * 2007-05-28 2008-12-04 Multi:Kk プリント配線板の製造方法及びその方法を用いて得られるポッティングダムを備えるプリント配線板
JP5446623B2 (ja) * 2009-09-07 2014-03-19 大日本印刷株式会社 センサ素子モジュール
JP2011097026A (ja) * 2009-09-30 2011-05-12 Sanyo Electric Co Ltd 素子搭載用基板、半導体モジュール、光学モジュールおよびカメラモジュール
WO2011058879A1 (ja) * 2009-11-12 2011-05-19 日本電気株式会社 機能素子内蔵基板、機能素子内蔵基板の製造方法、及び、配線基板
JP5481724B2 (ja) * 2009-12-24 2014-04-23 新光電気工業株式会社 半導体素子内蔵基板

Also Published As

Publication number Publication date
JP2013131669A (ja) 2013-07-04
US8994134B2 (en) 2015-03-31
US20130161776A1 (en) 2013-06-27

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