JP5875368B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5875368B2
JP5875368B2 JP2011289891A JP2011289891A JP5875368B2 JP 5875368 B2 JP5875368 B2 JP 5875368B2 JP 2011289891 A JP2011289891 A JP 2011289891A JP 2011289891 A JP2011289891 A JP 2011289891A JP 5875368 B2 JP5875368 B2 JP 5875368B2
Authority
JP
Japan
Prior art keywords
insulating layer
contact plug
opening
forming
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011289891A
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English (en)
Japanese (ja)
Other versions
JP2013140847A (ja
JP2013140847A5 (enExample
Inventor
博晃 佐野
博晃 佐野
剛士 岡部
剛士 岡部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011289891A priority Critical patent/JP5875368B2/ja
Priority to US13/681,844 priority patent/US8785269B2/en
Publication of JP2013140847A publication Critical patent/JP2013140847A/ja
Publication of JP2013140847A5 publication Critical patent/JP2013140847A5/ja
Application granted granted Critical
Publication of JP5875368B2 publication Critical patent/JP5875368B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2011289891A 2011-12-28 2011-12-28 半導体装置の製造方法 Expired - Fee Related JP5875368B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011289891A JP5875368B2 (ja) 2011-12-28 2011-12-28 半導体装置の製造方法
US13/681,844 US8785269B2 (en) 2011-12-28 2012-11-20 Method for manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011289891A JP5875368B2 (ja) 2011-12-28 2011-12-28 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2013140847A JP2013140847A (ja) 2013-07-18
JP2013140847A5 JP2013140847A5 (enExample) 2015-02-26
JP5875368B2 true JP5875368B2 (ja) 2016-03-02

Family

ID=48695116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011289891A Expired - Fee Related JP5875368B2 (ja) 2011-12-28 2011-12-28 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US8785269B2 (enExample)
JP (1) JP5875368B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6700655B2 (ja) * 2014-10-30 2020-05-27 キヤノン株式会社 光電変換装置および光電変換装置の製造方法
US11837640B2 (en) * 2021-06-29 2023-12-05 Sandisk Technologies Llc Transistors with stepped contact via structures and methods of forming the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093629A (en) * 1998-02-02 2000-07-25 Taiwan Semiconductor Manufacturing Company Method of simplified contact etching and ion implantation for CMOS technology
JP2002261161A (ja) * 2001-03-05 2002-09-13 Hitachi Ltd 半導体装置の製造方法
JP2003007850A (ja) 2001-06-18 2003-01-10 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP4368085B2 (ja) * 2002-01-08 2009-11-18 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP2008098480A (ja) * 2006-10-13 2008-04-24 Renesas Technology Corp 半導体装置の製造方法
JP5109341B2 (ja) 2006-11-14 2012-12-26 富士通セミコンダクター株式会社 半導体装置とその製造方法
JP5168935B2 (ja) 2007-02-21 2013-03-27 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2008227357A (ja) * 2007-03-15 2008-09-25 Sony Corp 固体撮像装置及びその製造方法
JP2008288329A (ja) * 2007-05-16 2008-11-27 Toshiba Corp 半導体装置
JP5558916B2 (ja) * 2009-06-26 2014-07-23 キヤノン株式会社 光電変換装置の製造方法

Also Published As

Publication number Publication date
JP2013140847A (ja) 2013-07-18
US8785269B2 (en) 2014-07-22
US20130171764A1 (en) 2013-07-04

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