JP2013140847A5 - - Google Patents
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- Publication number
- JP2013140847A5 JP2013140847A5 JP2011289891A JP2011289891A JP2013140847A5 JP 2013140847 A5 JP2013140847 A5 JP 2013140847A5 JP 2011289891 A JP2011289891 A JP 2011289891A JP 2011289891 A JP2011289891 A JP 2011289891A JP 2013140847 A5 JP2013140847 A5 JP 2013140847A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- opening
- contact plug
- semiconductor device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims 9
- 238000000034 method Methods 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical group 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011289891A JP5875368B2 (ja) | 2011-12-28 | 2011-12-28 | 半導体装置の製造方法 |
| US13/681,844 US8785269B2 (en) | 2011-12-28 | 2012-11-20 | Method for manufacturing a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011289891A JP5875368B2 (ja) | 2011-12-28 | 2011-12-28 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013140847A JP2013140847A (ja) | 2013-07-18 |
| JP2013140847A5 true JP2013140847A5 (enExample) | 2015-02-26 |
| JP5875368B2 JP5875368B2 (ja) | 2016-03-02 |
Family
ID=48695116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011289891A Expired - Fee Related JP5875368B2 (ja) | 2011-12-28 | 2011-12-28 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8785269B2 (enExample) |
| JP (1) | JP5875368B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6700655B2 (ja) * | 2014-10-30 | 2020-05-27 | キヤノン株式会社 | 光電変換装置および光電変換装置の製造方法 |
| US11837640B2 (en) * | 2021-06-29 | 2023-12-05 | Sandisk Technologies Llc | Transistors with stepped contact via structures and methods of forming the same |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6093629A (en) * | 1998-02-02 | 2000-07-25 | Taiwan Semiconductor Manufacturing Company | Method of simplified contact etching and ion implantation for CMOS technology |
| JP2002261161A (ja) * | 2001-03-05 | 2002-09-13 | Hitachi Ltd | 半導体装置の製造方法 |
| JP2003007850A (ja) | 2001-06-18 | 2003-01-10 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP4368085B2 (ja) * | 2002-01-08 | 2009-11-18 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2008098480A (ja) * | 2006-10-13 | 2008-04-24 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP5109341B2 (ja) | 2006-11-14 | 2012-12-26 | 富士通セミコンダクター株式会社 | 半導体装置とその製造方法 |
| JP5168935B2 (ja) | 2007-02-21 | 2013-03-27 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| JP2008227357A (ja) * | 2007-03-15 | 2008-09-25 | Sony Corp | 固体撮像装置及びその製造方法 |
| JP2008288329A (ja) * | 2007-05-16 | 2008-11-27 | Toshiba Corp | 半導体装置 |
| JP5558916B2 (ja) * | 2009-06-26 | 2014-07-23 | キヤノン株式会社 | 光電変換装置の製造方法 |
-
2011
- 2011-12-28 JP JP2011289891A patent/JP5875368B2/ja not_active Expired - Fee Related
-
2012
- 2012-11-20 US US13/681,844 patent/US8785269B2/en not_active Expired - Fee Related
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