JP5872790B2 - 半導体レーザ装置 - Google Patents

半導体レーザ装置 Download PDF

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Publication number
JP5872790B2
JP5872790B2 JP2011100480A JP2011100480A JP5872790B2 JP 5872790 B2 JP5872790 B2 JP 5872790B2 JP 2011100480 A JP2011100480 A JP 2011100480A JP 2011100480 A JP2011100480 A JP 2011100480A JP 5872790 B2 JP5872790 B2 JP 5872790B2
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passivation film
cladding layer
ridge portion
film
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Japanese (ja)
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JP2012234862A5 (enExample
JP2012234862A (ja
Inventor
将人 萩元
将人 萩元
深井　春紀
春紀 深井
進 反町
進 反町
敏 川中
敏 川中
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Ushio Opto Semiconductors Inc
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Ushio Opto Semiconductors Inc
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Priority to JP2011100480A priority Critical patent/JP5872790B2/ja
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Publication of JP2012234862A5 publication Critical patent/JP2012234862A5/ja
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JP2011100480A 2011-04-28 2011-04-28 半導体レーザ装置 Expired - Fee Related JP5872790B2 (ja)

Priority Applications (1)

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JP2011100480A JP5872790B2 (ja) 2011-04-28 2011-04-28 半導体レーザ装置

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JP2011100480A JP5872790B2 (ja) 2011-04-28 2011-04-28 半導体レーザ装置

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JP2012234862A JP2012234862A (ja) 2012-11-29
JP2012234862A5 JP2012234862A5 (enExample) 2014-05-01
JP5872790B2 true JP5872790B2 (ja) 2016-03-01

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JP2011100480A Expired - Fee Related JP5872790B2 (ja) 2011-04-28 2011-04-28 半導体レーザ装置

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6388838B2 (ja) * 2015-03-09 2018-09-12 Ｎｔｔエレクトロニクス株式会社 光機能素子
JP6981492B2 (ja) * 2018-08-20 2021-12-15 三菱電機株式会社 半導体レーザ装置の製造方法
WO2020039475A1 (ja) 2018-08-20 2020-02-27 三菱電機株式会社 半導体レーザ装置の製造方法、半導体レーザ装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4111696B2 (ja) * 2001-08-08 2008-07-02 三洋電機株式会社 窒化物系半導体レーザ素子
JP2006012899A (ja) * 2004-06-22 2006-01-12 Sharp Corp 半導体レーザ素子および半導体レーザ素子の製造方法
JP4952184B2 (ja) * 2005-11-01 2012-06-13 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
JP2007134445A (ja) * 2005-11-09 2007-05-31 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2007311682A (ja) * 2006-05-22 2007-11-29 Matsushita Electric Ind Co Ltd 半導体装置
JP4985374B2 (ja) * 2006-12-28 2012-07-25 日亜化学工業株式会社 窒化物半導体レーザ素子
US8073031B2 (en) * 2008-03-03 2011-12-06 Sharp Kabushiki Kaisha Laser diode with improved heat dissipation
JP5343687B2 (ja) * 2009-04-28 2013-11-13 日亜化学工業株式会社 窒化物半導体レーザ素子

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