JP5872045B2 - 発光ダイオードチップ - Google Patents
発光ダイオードチップ Download PDFInfo
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- JP5872045B2 JP5872045B2 JP2014527595A JP2014527595A JP5872045B2 JP 5872045 B2 JP5872045 B2 JP 5872045B2 JP 2014527595 A JP2014527595 A JP 2014527595A JP 2014527595 A JP2014527595 A JP 2014527595A JP 5872045 B2 JP5872045 B2 JP 5872045B2
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- emitting diode
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- electrical connection
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- 239000010410 layer Substances 0.000 claims description 243
- 239000004065 semiconductor Substances 0.000 claims description 63
- 239000011241 protective layer Substances 0.000 claims description 41
- 229910052709 silver Inorganic materials 0.000 claims description 20
- 239000004332 silver Substances 0.000 claims description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 13
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 238000004020 luminiscence type Methods 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 15
- 239000000463 material Substances 0.000 description 15
- 238000005260 corrosion Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- -1 nitride compound Chemical class 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000013139 quantization Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 150000003378 silver Chemical class 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Electrodes Of Semiconductors (AREA)
Description
図1に示されている発光ダイオードチップ1は、半導体層列2を備え、該半導体層列2は、電磁ビーム13の放射のために設けられた活性層3を有している。
Claims (12)
- 半導体層列(2)を備えた発光ダイオードチップ(1)であって、
前記半導体層列(2)は、電磁ビーム(13)を生成するのに適した活性層(3)を有している発光ダイオードチップ(1)において、
前記発光ダイオードチップ(1)が、前面側においてビーム出射面(4)を有しており、
前記発光ダイオードチップ(1)は、前記ビーム出射面(4)とは反対側の裏面側において、少なくとも領域毎に反射層(5)を有しており、前記反射層(5)は銀を含んでおり、
前記反射層(5)には保護層(6)が設けられており、
前記保護層(6)は、透明導電性酸化物を有し、さらに、
前記反射層(5)は、前記保護層(6)とは反対側の界面が前記半導体層列(2)に当接しており、
前記発光ダイオードチップ(1)は、第1の電気的接続層(10)及び第2の電気的接続層(15)を有し、
前記第1の電気的接続層(10)及び前記第2の電気的接続層(15)は、前記半導体層列(2)の裏面側に対向し、電気絶縁層(14)によって相互に電気的に絶縁され、
前記第2の電気的接続層(15)の部分領域が、前記半導体層列(2)の裏面側から前記活性層(3)の少なくとも1つの貫通孔部(21a,21b)を貫通して、前記半導体層列(2)の前面側の方向に延在している、
ことを特徴とする、発光ダイオードチップ(1)。 - 前記保護層(6)は、ZnO、ZnO:Ga、ZnO:Al、ITO、IZO、又はIGZOを含んでいる、請求項1記載の発光ダイオードチップ(1)。
- 前記保護層(6)は、5nm〜500nmの間の厚さを有している、請求項1または2記載の発光ダイオードチップ(1)。
- 前記保護層(6)は、10nm〜100nmの間の厚さを有している、請求項3記載の発光ダイオードチップ(1)。
- 前記反射層(5)及び/又は前記保護層(6)の側縁(16)は、少なくとも領域毎に電気絶縁層(14)によって覆われている、請求項1から4いずれか1項記載の発光ダイオードチップ(1)。
- 前記電気絶縁層(14)は、酸化物層又は窒化物層である、請求項5記載の発光ダイオードチップ(1)。
- 前記保護層(6)の、前記反射層(5)とは反対側に、第1の電気的接続層(10)が設けられている、請求項1から6いずれか1項記載の発光ダイオードチップ(1)。
- 前記第1の電気的接続層(10)は、複数の部分層(7,8,9)から形成されている、請求項7記載の発光ダイオードチップ(1)。
- 前記部分層(7,8,9)は、前記反射層(5)から出発して白金層(7)、金層(8)、チタン層(9)を含んでいる、請求項8記載の発光ダイオードチップ(1)。
- 前記反射層(5)に当接している前記半導体層列(2)の領域は、p型半導体領域(2b)である、請求項1から9いずれか1項記載の発光ダイオードチップ(1)。
- 前記発光ダイオードチップ(1)は、前記反射層(5)から見て前記半導体層列(2)とは反対側が支持体(19)に接続されている、請求項1から10いずれか1項記載の発光ダイオードチップ(1)。
- 前記発光ダイオードチップ(1)は、成長基板を何も有さない、請求項1から11いずれか1項記載の発光ダイオードチップ(1)。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011112000.2A DE102011112000B4 (de) | 2011-08-31 | 2011-08-31 | Leuchtdiodenchip |
DE102011112000.2 | 2011-08-31 | ||
PCT/EP2012/066462 WO2013030094A1 (de) | 2011-08-31 | 2012-08-23 | Leuchtdiodenchip |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014525679A JP2014525679A (ja) | 2014-09-29 |
JP5872045B2 true JP5872045B2 (ja) | 2016-03-01 |
Family
ID=46717862
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014527595A Active JP5872045B2 (ja) | 2011-08-31 | 2012-08-23 | 発光ダイオードチップ |
Country Status (7)
Country | Link |
---|---|
US (2) | US9577165B2 (ja) |
JP (1) | JP5872045B2 (ja) |
KR (1) | KR20140060327A (ja) |
CN (2) | CN103765616B (ja) |
DE (1) | DE102011112000B4 (ja) |
TW (1) | TWI520379B (ja) |
WO (1) | WO2013030094A1 (ja) |
Families Citing this family (14)
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DE102011015821B4 (de) * | 2011-04-01 | 2023-04-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
DE102013103216A1 (de) | 2013-03-28 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Strahlung emittierender Halbleiterchip |
DE102014108373A1 (de) * | 2014-06-13 | 2015-12-17 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
DE102014111482A1 (de) * | 2014-08-12 | 2016-02-18 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
KR20160037060A (ko) * | 2014-09-26 | 2016-04-05 | 서울바이오시스 주식회사 | 발광소자 및 그 제조 방법 |
CN105895758A (zh) * | 2014-10-23 | 2016-08-24 | 北京中科天顺信息技术有限公司 | 发光二极管、发光二极管模块及其制作方法 |
JP6563703B2 (ja) * | 2015-06-18 | 2019-08-21 | アルパッド株式会社 | 半導体発光装置 |
DE102015111487A1 (de) | 2015-07-15 | 2017-01-19 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
KR102422246B1 (ko) | 2015-07-30 | 2022-07-19 | 삼성전자주식회사 | 발광 소자 패키지 |
CN105226154B (zh) * | 2015-10-27 | 2019-03-05 | 天津三安光电有限公司 | 一种led芯片结构与制造方法 |
CN106848027B (zh) * | 2015-12-03 | 2019-08-23 | 映瑞光电科技(上海)有限公司 | 高可靠性垂直倒装led芯片的制备方法 |
KR102355917B1 (ko) * | 2017-10-26 | 2022-01-25 | 엘지디스플레이 주식회사 | 발광다이오드 및 전계발광 표시장치 |
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CN107516703A (zh) | 2017-12-26 |
US20170148962A1 (en) | 2017-05-25 |
CN103765616A (zh) | 2014-04-30 |
DE102011112000B4 (de) | 2023-11-30 |
US20140319566A1 (en) | 2014-10-30 |
US9577165B2 (en) | 2017-02-21 |
WO2013030094A1 (de) | 2013-03-07 |
CN103765616B (zh) | 2017-08-15 |
US10043958B2 (en) | 2018-08-07 |
TW201314961A (zh) | 2013-04-01 |
KR20140060327A (ko) | 2014-05-19 |
JP2014525679A (ja) | 2014-09-29 |
DE102011112000A1 (de) | 2013-02-28 |
CN107516703B (zh) | 2019-06-14 |
TWI520379B (zh) | 2016-02-01 |
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