JP5871453B2 - プラズマ処理装置，基板保持機構，基板位置ずれ検出方法 - Google Patents

プラズマ処理装置，基板保持機構，基板位置ずれ検出方法 Download PDF

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JP5871453B2
JP5871453B2 JP2010116145A JP2010116145A JP5871453B2 JP 5871453 B2 JP5871453 B2 JP 5871453B2 JP 2010116145 A JP2010116145 A JP 2010116145A JP 2010116145 A JP2010116145 A JP 2010116145A JP 5871453 B2 JP5871453 B2 JP 5871453B2
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Prior art keywords
substrate
pressure
gas
processed
substrate holding
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Japanese (ja)
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JP2011243834A (ja
Inventor
利洋 東条
利洋 東条
敦城 古屋
敦城 古屋
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2010116145A priority Critical patent/JP5871453B2/ja
Priority to KR1020110047409A priority patent/KR101314511B1/ko
Priority to TW100117607A priority patent/TWI549220B/zh
Priority to CN201110135922.XA priority patent/CN102299091B/zh
Publication of JP2011243834A publication Critical patent/JP2011243834A/ja
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Publication of JP5871453B2 publication Critical patent/JP5871453B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2010116145A 2010-05-20 2010-05-20 プラズマ処理装置，基板保持機構，基板位置ずれ検出方法 Active JP5871453B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010116145A JP5871453B2 (ja) 2010-05-20 2010-05-20 プラズマ処理装置，基板保持機構，基板位置ずれ検出方法
KR1020110047409A KR101314511B1 (ko) 2010-05-20 2011-05-19 플라즈마 처리 장치, 기판 유지 기구, 기판 위치 어긋남 검출 방법
TW100117607A TWI549220B (zh) 2010-05-20 2011-05-19 A plasma processing apparatus, a substrate holding mechanism, and a substrate displacement detecting method
CN201110135922.XA CN102299091B (zh) 2010-05-20 2011-05-20 等离子体处理装置、基板保持机构和位置偏移检测方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010116145A JP5871453B2 (ja) 2010-05-20 2010-05-20 プラズマ処理装置，基板保持機構，基板位置ずれ検出方法

Publications (2)

Publication Number Publication Date
JP2011243834A JP2011243834A (ja) 2011-12-01
JP5871453B2 true JP5871453B2 (ja) 2016-03-01

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Family Applications (1)

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JP2010116145A Active JP5871453B2 (ja) 2010-05-20 2010-05-20 プラズマ処理装置，基板保持機構，基板位置ずれ検出方法

Country Status (4)

Country Link
JP (1) JP5871453B2 (zh)
KR (1) KR101314511B1 (zh)
CN (1) CN102299091B (zh)
TW (1) TWI549220B (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6010433B2 (ja) * 2012-11-15 2016-10-19 東京エレクトロン株式会社 基板載置台および基板処理装置
CN103292934B (zh) * 2013-05-15 2015-04-08 北京京东方光电科技有限公司 一种承载物检测系统
CN104538334B (zh) * 2014-12-17 2017-08-08 中国地质大学（北京） 一种多功能等离子体腔室处理系统
US10879046B2 (en) * 2015-09-11 2020-12-29 Applied Materials, Inc. Substrate support with real time force and film stress control
CN106876237B (zh) * 2015-12-10 2018-11-20 中微半导体设备(上海)有限公司 一种设有反馈去夹持系统的等离子体处理装置和方法
CN106298453A (zh) * 2016-08-31 2017-01-04 上海华力微电子有限公司 一种维持晶圆背压稳定的方法
US11114327B2 (en) 2017-08-29 2021-09-07 Applied Materials, Inc. ESC substrate support with chucking force control
KR102410974B1 (ko) 2017-10-13 2022-06-20 삼성전자주식회사 반도체 제조 장치의 구동 방법
WO2019123584A1 (ja) * 2017-12-20 2019-06-27 株式会社Ｆｕｊｉ プラズマ照射装置
JP7202814B2 (ja) * 2018-08-31 2023-01-12 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
CN109483429B (zh) * 2018-10-18 2020-10-16 武汉华星光电半导体显示技术有限公司 承载装置及承载方法
JP7249814B2 (ja) * 2019-03-04 2023-03-31 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
CN112501581B (zh) * 2020-11-12 2022-02-22 北京北方华创微电子装备有限公司 半导体加工设备中的遮蔽盘承载装置及半导体加工设备
CN112614797B (zh) * 2021-03-08 2021-07-02 杭州众硅电子科技有限公司 一种晶圆位置检测装置
CN117256044A (zh) * 2021-05-12 2023-12-19 应用材料公司 基板查验的方法和基板处理系统
CN114070197B (zh) * 2021-11-26 2024-04-16 阿特斯阳光电力集团股份有限公司 光伏组件的测试方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6419186U (zh) * 1987-07-25 1989-01-31
JPH04359539A (ja) * 1991-06-06 1992-12-11 Fujitsu Ltd 静電吸着装置
JPH07231032A (ja) * 1994-02-15 1995-08-29 Oki Electric Ind Co Ltd 試料保持装置
JPH08139170A (ja) * 1994-11-02 1996-05-31 Sony Corp 基板ステージ
KR19980067497U (ko) * 1997-05-27 1998-12-05 문정환 웨이퍼의 위치감지장치
JP4522139B2 (ja) * 2003-09-19 2010-08-11 大日本スクリーン製造株式会社 基板処理ユニット、基板載置状態検出方法および基板処理装置
JP4753888B2 (ja) * 2007-01-15 2011-08-24 東京エレクトロン株式会社 基板保持機構及びプラズマ処理装置
JP4450106B1 (ja) * 2008-03-11 2010-04-14 東京エレクトロン株式会社 載置台構造及び処理装置
JP5271586B2 (ja) * 2008-04-09 2013-08-21 東京エレクトロン株式会社 プラズマ処理容器およびプラズマ処理装置
JP5378706B2 (ja) * 2008-05-22 2013-12-25 東京エレクトロン株式会社 プラズマ処理装置及びそれに用いられる処理ガス供給装置
TW201005825A (en) * 2008-05-30 2010-02-01 Panasonic Corp Plasma processing apparatus and method
JP2010045071A (ja) * 2008-08-08 2010-02-25 Nikon Corp 検知装置、基板保持部材、搬送装置および接合装置
JP2010083663A (ja) * 2008-10-02 2010-04-15 Olympus Corp 基板浮上装置、基板検査装置、及び、基板検査方法

Also Published As

Publication number Publication date
KR20110128150A (ko) 2011-11-28
TWI549220B (zh) 2016-09-11
TW201220422A (en) 2012-05-16
CN102299091A (zh) 2011-12-28
KR101314511B1 (ko) 2013-10-07
CN102299091B (zh) 2014-09-03
JP2011243834A (ja) 2011-12-01

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