TW201220422A - Plasma processing apparatus, substrate holding mechanism, and substrate position shift detecting method - Google Patents
Plasma processing apparatus, substrate holding mechanism, and substrate position shift detecting method Download PDFInfo
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- TW201220422A TW201220422A TW100117607A TW100117607A TW201220422A TW 201220422 A TW201220422 A TW 201220422A TW 100117607 A TW100117607 A TW 100117607A TW 100117607 A TW100117607 A TW 100117607A TW 201220422 A TW201220422 A TW 201220422A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
201220422 六、發明說明： 【發明所屬之技術領域】 本發明是有關對平面顯示器（FPD )用玻璃基板等的 大型基板實施電漿處理的電漿處理裝置，基板保持機構， 基板位移檢測方法。 【先前技術】 在FPD的面板製造中，一般是在玻璃等絕緣體所構 成的基板上形成有畫素的裝置或電極或配線等》如此的面 板製造的各種工程之中，蝕刻，CVD，灰化，濺射等的微 細加工是藉由電漿處理裝置來進行。電漿處理裝置是例如 在可減壓的處理容器內，將基板載置於具備構成下部電極 的基座之載置台的上面，對基座供給高頻電力，藉此在基 板上形成處理氣體的電漿，藉由此電漿在基板上進行蝕刻 等的預定處理。 此情況，需要抑制電漿處理中的發熱所造成溫度的上 昇，將基板的溫度控制成一定。因此，將藉由冷卻裝置所 溫調的冷媒予以循環供給至載置台內的冷媒通路的同時， 使He氣體等傳熱性佳的氣體（傳熱氣體）通過載置台之 中而供給至基板的背面來間接性地冷卻基板的方式常被使 用。此冷卻方式，由於需要抗拒He氣體的供給壓力來將 基板固定保持於載置台上，因此在載置台上設置基板保持 部，例如藉由靜電吸附力來將基板吸附保持於基板保持部 的基板保持面。 201220422 一旦基板對載置台上的基板保持面產生位移，則因爲 在基座上露出基板保持面，所以若在此狀態下對基座施加 高頻電力來使電漿產生，則恐有發生異常放電而使基座損 傷之虞。因此，只要在使電漿產生之前檢測出如此的基板 位移，便可防範異常放電的發生。 FPD用基板相較於半導體晶圓，尺寸大上很多，因此 即使原封不動地適用開發於半導體晶圓用的技術，還是會 有無法正確地檢測出基板的位移之問題。例如專利文獻1 所記載的技術那樣，在載置台的上部設置壓力測定孔，經 由壓力測定孔來將壓力測定氣體供給至載置台與半導體晶 圓之間，而來監視壓力測定氣體的壓力》此方法是例如無 半導體晶圓時或靜電保持力小時，因爲壓力測定氣體會從 壓力測定孔漏出而壓力降低，所以可藉由監視該壓力來檢 測出載置台上的半導體晶圓的有無或保持狀態，但無法檢 測到半導體晶圓的位移。專利文獻2所記載的技術也是在 載置台的上部設置壓力測定孔來檢測壓力者，但與上述同 樣也無法檢測到位移。 爲了正確地檢測出如此的FPD用基板的位移，如專 利文獻3的圖16A，圖16B所示，在包圍傳熱氣體的氣體 孔形成領域的框部的4個角部設置位移檢測孔，將該等位 移檢測孔連通至氣體孔形成領域的凹部空間（從氣體孔排 出傳熱氣體的空間）之載置台的開發也有所進展。藉此， 一旦基板位移，則從位移檢測孔漏出氣體，因此被連接至 氣體孔的氣體流路的壓力也會變化。藉由壓力調整閥（ -6- 201220422 PCV)的內藏壓力計來予以監控下’檢測出基板的位移。 [先行技術文獻] [專利文獻] [專利文獻1]特開平〇4_359539號公報 [專利文獻2]特開平07-2 3 1 03 2號公報 [專利文獻3]特開2008- 1 72 1 70號公報 【發明內容】 (發明所欲解決的課題） 然而，近年來FPD用基板的尺寸更大型化，載置台 的尺寸也隨著比以往還大型化。可想像如此的裝置的大型 化的傾向今後也會持續。如此裝置越大型化，越使傳熱氣 體的氣體孔的數量增大，且對該等氣體孔供給傳熱氣體的 氣體流路也不得不增長。 可是，如此氣體流路越長，傳導越差，因此氣體流路 的壓力損失變大，難以所望的壓力來供給傳熱氣體至基板 的背面。所以，基板位移時與未位移時的傳熱氣體的漏出 流量的差些微，因此基板的位移檢測變難，其檢測精度也 會有降低的問題。 於是，本發明是有鑑於如此的問題而硏發者，其目的 是在於提供一種可消除傳熱氣體的氣體流路的壓力損失的 影響，使基板的位移檢測的精度提升之電漿處理裝置等。 201220422 (用以解決課題的手段） 爲了解決上述課題，若根據本發明的觀點，則可提供 一種基板保持機構，係於電漿被生成的空間內載置保持矩 形的被處理基板之基板保持機構，其特徵係具備： 矩形的載置台，其係載置保持上述被處理基板； 氣體流路，其係用以在上述載置台與被保持於其基板 保持面的被處理基板之間供給來自氣體供給源的氣體； 複數的氣體孔，其係被形成於上述載置台的基板保持 面，將來自上述氣體流路的氣體引導至上述基板保持面上 ♦ 複數的壓力檢測孔，其係被形成於上述基板保持面的 上述氣體孔形成領域的外側，檢測出被處理基板的背面所 受的壓力； 壓力感測器，其係被連接至上述複數的壓力檢測孔； 及 位移檢測手段，其係根據來自上述壓力感測器的檢測 壓力，進行上述被處理基板的位移檢測》 爲了解決上述課題，若根據本發明的別的觀點，則可 提供一種基板位移檢測方法，係於電漿被生成的空間內載 置保持矩形的被處理基板之基板保持機構的基板位移檢測 方法，其特徵爲： 上述基板保持機構係具備： 矩形的載置台，其係載置保持上述被處理基板； 氣體流路，其係用以在上述載置台與被保持於其基板[Technical Field] The present invention relates to a plasma processing apparatus, a substrate holding mechanism, and a substrate displacement detecting method for performing plasma treatment on a large substrate such as a glass substrate for a flat panel display (FPD). [Prior Art] In the panel manufacturing of FPD, a device, an electrode, or a wiring in which a pixel is formed on a substrate made of an insulator such as glass is generally used. Among various processes for manufacturing such a panel, etching, CVD, and ashing are performed. The fine processing such as sputtering is performed by a plasma processing apparatus. The plasma processing apparatus is, for example, placed in a decompressible processing container, and placed on a top surface of a mounting table having a pedestal constituting a lower electrode, and supplied with high-frequency power to the susceptor to form a processing gas on the substrate. The plasma is subjected to predetermined processing such as etching on the substrate by the plasma. In this case, it is necessary to suppress an increase in temperature caused by heat generation in the plasma treatment, and to control the temperature of the substrate to be constant. Therefore, the refrigerant that is temperature-regulated by the cooling device is circulated and supplied to the refrigerant passage in the mounting table, and a gas (heat transfer gas) having good heat transfer properties such as He gas is supplied to the substrate through the mounting table. The manner in which the back side indirectly cools the substrate is often used. In this cooling method, since it is necessary to resist the supply pressure of the He gas to fix and hold the substrate on the mounting table, the substrate holding portion is provided on the mounting table, and the substrate is held by the substrate holding portion by electrostatic adsorption force, for example. surface. 201220422 Once the substrate is displaced to the substrate holding surface on the mounting table, since the substrate holding surface is exposed on the pedestal, if high-frequency power is applied to the pedestal in this state to generate plasma, abnormal discharge may occur. And the pedestal is damaged. Therefore, as long as such a substrate displacement is detected before the plasma is generated, the occurrence of abnormal discharge can be prevented. Since the substrate for the FPD is much larger in size than the semiconductor wafer, even if the technique for developing a semiconductor wafer is applied as it is, there is a problem that the displacement of the substrate cannot be accurately detected. For example, as in the technique described in Patent Document 1, a pressure measuring hole is provided in the upper portion of the mounting table, and a pressure measuring gas is supplied between the mounting table and the semiconductor wafer via the pressure measuring hole to monitor the pressure of the pressure measuring gas. The method is, for example, when there is no semiconductor wafer or when the electrostatic holding force is small, since the pressure measuring gas leaks from the pressure measuring hole and the pressure is lowered, the presence or absence of the semiconductor wafer on the mounting table can be detected by monitoring the pressure. However, the displacement of the semiconductor wafer cannot be detected. In the technique described in Patent Document 2, a pressure measuring hole is provided on the upper portion of the mounting table to detect the pressure. However, the displacement cannot be detected as described above. In order to accurately detect the displacement of the substrate for the FPD, as shown in FIG. 16A and FIG. 16B of Patent Document 3, a displacement detecting hole is provided at four corner portions of the frame portion surrounding the gas hole forming region of the heat transfer gas. The development of the mounting table in which the displacement detecting holes communicate with the recessed space in the field of gas hole formation (the space in which the heat transfer gas is discharged from the gas holes) has also progressed. Thereby, when the substrate is displaced, gas is leaked from the displacement detecting hole, and therefore the pressure of the gas flow path connected to the gas hole also changes. The displacement of the substrate was detected by monitoring the built-in pressure gauge of the pressure regulating valve (-6-201220422 PCV). [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) However, in recent years, the size of the substrate for FPD has been increased, and the size of the mounting table has also increased in size. The tendency to increase the size of such a device is expected to continue in the future. As the size of the apparatus increases, the number of gas holes of the heat transfer gas increases, and the gas flow path for supplying the heat transfer gas to the gas holes also has to be increased. However, the longer the gas flow path is, the worse the conduction is. Therefore, the pressure loss of the gas flow path is increased, and it is difficult to supply the heat transfer gas to the back surface of the substrate at a desired pressure. Therefore, the difference between the displacement of the heat transfer gas at the time of the displacement of the substrate and the displacement of the heat transfer gas is small, so that the displacement detection of the substrate is difficult, and the detection accuracy is also lowered. Accordingly, the present invention has been made in view of such a problem, and an object thereof is to provide a plasma processing apparatus which can eliminate the influence of pressure loss of a gas flow path of a heat transfer gas and improve the accuracy of displacement detection of a substrate. . 201220422 (Means for Solving the Problems) In order to solve the above problems, according to the present invention, it is possible to provide a substrate holding mechanism for mounting a substrate holding substrate having a rectangular rectangular shape in a space in which plasma is generated. The present invention includes a rectangular mounting table that holds and holds the substrate to be processed, and a gas flow path for supplying gas from the mounting table and the substrate to be processed held on the substrate holding surface. a gas supplied from a source; a plurality of gas holes formed on a substrate holding surface of the mounting table, and a gas from the gas flow path is guided to the substrate holding surface ♦ a plurality of pressure detecting holes, which are formed in The substrate holding surface on the outer side of the gas hole forming region detects the pressure applied to the back surface of the substrate to be processed; the pressure sensor is connected to the plurality of pressure detecting holes; and the displacement detecting means is based on The detection pressure from the pressure sensor is used to perform the displacement detection of the substrate to be processed. According to another aspect of the present invention, there is provided a substrate displacement detecting method, wherein a substrate displacement detecting method of a substrate holding mechanism for holding a substrate to be processed having a rectangular shape is placed in a space in which a plasma is generated, wherein: The substrate holding mechanism includes a rectangular mounting table on which the substrate to be processed is placed, and a gas flow path for holding the substrate on the mounting table.
-8 - 201220422 保持面的被處理基板之間供給來自氣體供給源的氣體； 複數的氣體孔，其係被形成於上述載置台的基板保持 面，將來自上述氣體流路的氣體引導至上述基板保持面上 複數的壓力檢測孔’其係被形成於上述基板保持面的 上述氣體孔形成領域的外側，檢測出被處理基板的背面所 受的壓力； 壓力感測器，其係被連接至上述複數的壓力檢測孔； 及 流量調整器，其係調整來自上述氣體供給源的氣體流 量， 根據來自上述壓力感測器的檢測壓力，進行上述被處 理基板的位移檢測’且進行上述流量調整器之氣體流量的 調整》 爲了解決上述課題，若根據本發明的別的觀點，則可 提供一種電漿處理裝置，係於處理室內導入處理氣體，藉 由使上述處理氣體的電漿產生來對被載置保持於處理室內 的載置台之絕緣體所構成的被處理基板實施預定的電漿處 理之電漿處理裝置，其特徵係具備： 氣體流路’其係用以在上述載置台與被保持於其基板 保持面的被處理基板之間供給來自氣體供給源的氣體； 複數的氣體孔，其係被形成於上述載置台的基板保持 面，將來自上述氣體流路的氣體引導至上述基板保持面上 201220422 複數的壓力檢測孔，其係被形成於上述基板保持面的 上述氣體孔形成領域的外側，檢測出被處理基板的背面所 受的壓力； 壓力感測器，其係被連接至上述複數的壓力檢測孔； 及 位移檢測手段，其係根據來自上述壓力感測器的檢測 壓力，進行上述被處理基板的位移檢測。 若根據如此的本發明，則有別於傳熱氣體用的氣體孔 另外設置複數的壓力檢測孔，可由該等的壓力檢測孔來直 接檢測出基板背面壓力，可根據該檢測壓力來檢測出基板 的位移。藉此，可不受傳熱氣體用的氣體孔之壓力損失的 影響，來檢測出被處理基板的位移。又，由於複數的壓力 檢測孔是形成於氣體孔形成領域的外側，因此只要被處理 基板稍微偏移，壓力便會變化，所以位移檢測容易。 [發明的效果] 若根據本發明，則由於可消除傳熱氣體的氣體流路的 壓力損失的影響，使基板的位移檢測的精度提升，因此亦 可適用於更大型的裝置。 【實施方式】 以下一邊參照附面，一邊詳細說明有關本發明的較佳 實施形態。另外，在本說明書及圖面中，有關實質上具有 同一機能構成的構成要素是附上同一符號，藉此省略重複 -10- 201220422 說明。 (電漿處理裝置的構成例） 首先，一邊參照圖面一邊說明有關將本發明適.用於具 備複數的電漿處理裝置之多腔室型的處理裝置時的實施形 態。圖1是本實施形態的處理裝置1 〇〇的外觀立體圖。同 圖所示的處理裝置100是具備用以對平面顯示器用基板（ FPD用基板）G實施電漿處理的3個電漿處理裝置》電漿 處理裝置是分別具備處理室200。 在處理室200內設有例如載置FPD用基板G的載置 台，在此載置台的上方設有用以導入處理氣體（例如製程 氣體）的淋浴頭。載置台是具備構成下部電極的基座，與 該基座平行對向設置的淋浴頭亦兼具作爲上部電極的機能 。在各處理室200可進行同一處理（例如蝕刻處理等）， 或亦可進行相異的處理（例如蝕刻處理及灰化處理等）。 另外，有關處理室200內的具體構成例會在往後敘述。 各處理室200是分別經由閘閥1 02來連結至剖面多角 形狀（例如剖面矩形狀）的搬送室1 1 〇的側面。搬送室 110更經由閘閥104來連結至裝載鎖定室120。裝載鎖定 室120是隔著閘閥106來鄰設基板搬出入機構130。 在基板搬出入機構130分別鄰設2個的索引器（ indexer) 140。在索引器140載置有收納FPD用基板G的 卡匣142。卡匣142是構成可收納複數片（例如25片） 的FPD用基板G。 -11 - 201220422 藉由如此的電漿處理裝置來對FPD用基板G進行電 漿處理時，首先藉由基板搬出入機構130來將卡匣142內 的FPD用基板G搬入至裝載鎖定室120內。此時，在裝 載鎖定室120內若有處理完了的FPD用基板G，則會從 裝載鎖定室120內搬出該處理完了的FPD用基板G，置 換成未處理的FPD用基板G。一旦FPD用基板G被搬入 至裝載鎖定室120內，則關關閘閥106。 其次，將裝載鎖定室120內減壓至預定的真空度之後 ，開啓搬送室1 1 〇與裝載鎖定室1 20間的閘閥1 04。然後 ，藉由搬送室110內的搬送機構（未圖示）來將裝載鎖定 室120內的FPD用基板G搬入至搬送室110內之後，關 閉閘閥1 〇 4。 開啓搬送室1 10與處理室200之間的閘閥102，藉由 上述搬送機構來搬入未處理的FPD用基板G至處理室 200內的載置台。此時，若有處理完了的FPD用基板G， 則將該處理完了的FPD用基板G搬出，置換成未處理的 FPD用基板G。 在處理室2 00內是經由淋浴頭來導入處理氣體至處理 室內，藉由對下部電極或上部電極，或上部電極及下部電 極的雙方供給高頻電力，使處理氣體的電漿產生於下部電 極與上部電極之間，藉此對被保持於載置台上的FPD用 基板G進行預定的電漿處理。 (處理室的構成例）-8 - 201220422 The gas from the gas supply source is supplied between the substrates to be processed on the holding surface; a plurality of gas holes are formed on the substrate holding surface of the mounting table, and the gas from the gas flow path is guided to the substrate a plurality of pressure detecting holes on the holding surface are formed on the outer side of the gas hole forming region of the substrate holding surface, and the pressure applied to the back surface of the substrate to be processed is detected; and a pressure sensor is connected to the above a plurality of pressure detecting holes; and a flow rate adjuster that adjusts a flow rate of the gas from the gas supply source, performs displacement detection of the substrate to be processed based on a detection pressure from the pressure sensor, and performs the flow rate adjuster In order to solve the above problems, according to another aspect of the present invention, a plasma processing apparatus can be provided which introduces a processing gas into a processing chamber and generates a plasma of the processing gas to be loaded. The substrate to be processed which is formed by the insulator held on the mounting table in the processing chamber is subjected to a predetermined plasma A plasma processing apparatus characterized by comprising: a gas flow path for supplying a gas from a gas supply source between the mounting table and a substrate to be processed held on a substrate holding surface; a plurality of gas holes The film is formed on the substrate holding surface of the mounting table, and guides the gas from the gas flow path to the plurality of pressure detecting holes of the substrate holding surface 201220422, and the gas holes formed on the substrate holding surface are formed. The outside of the field detects the pressure applied to the back surface of the substrate to be processed; the pressure sensor is connected to the plurality of pressure detecting holes; and the displacement detecting means is based on the detecting pressure from the pressure sensor Performing displacement detection of the substrate to be processed. According to the present invention, a plurality of pressure detecting holes are separately provided in the gas holes for the heat transfer gas, and the back pressure of the substrate can be directly detected by the pressure detecting holes, and the substrate can be detected based on the detected pressure. Displacement. Thereby, the displacement of the substrate to be processed can be detected without being affected by the pressure loss of the gas holes for the heat transfer gas. Further, since the plurality of pressure detecting holes are formed outside the gas hole forming region, the pressure is changed as long as the substrate to be processed is slightly shifted, so that the displacement detection is easy. [Effect of the Invention] According to the present invention, since the influence of the pressure loss of the gas flow path of the heat transfer gas can be eliminated, the accuracy of the displacement detection of the substrate can be improved, and therefore, it can be applied to a larger device. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In addition, in the specification and the drawings, constituent elements having substantially the same functional configuration are denoted by the same reference numerals, and the description is omitted -10- 201220422. (Configuration example of the plasma processing apparatus) First, an embodiment in which the present invention is applied to a multi-chamber type processing apparatus having a plurality of plasma processing apparatuses will be described with reference to the drawings. Fig. 1 is a perspective view showing the appearance of a processing apparatus 1 according to the present embodiment. The processing apparatus 100 shown in the figure is provided with three plasma processing apparatuses for performing plasma processing on the substrate for a flat display (substrate FPD) G. The plasma processing apparatus includes a processing chamber 200. For example, a mounting table on which the FPD substrate G is placed is provided in the processing chamber 200, and a shower head for introducing a processing gas (for example, a process gas) is provided above the mounting table. The mounting table is provided with a pedestal constituting the lower electrode, and the shower head provided in parallel with the pedestal also functions as an upper electrode. The same processing (for example, etching treatment) may be performed in each processing chamber 200, or different processing (for example, etching treatment, ashing treatment, or the like) may be performed. Further, a specific configuration example in the processing chamber 200 will be described later. Each of the processing chambers 200 is connected to a side surface of a transfer chamber 1 1 〇 having a polygonal cross section (for example, a rectangular cross section) via a gate valve 102. The transfer chamber 110 is further coupled to the load lock chamber 120 via the gate valve 104. The load lock chamber 120 is provided with a substrate carry-in/out mechanism 130 adjacent to the gate valve 106. Two indexers 140 are adjacent to each other in the substrate carry-in/out mechanism 130. A cassette 142 that houses the FPD substrate G is placed on the indexer 140. The cassette 142 is a substrate G for FPD that can accommodate a plurality of sheets (for example, 25 sheets). -11 - 201220422 When the FPD substrate G is plasma-treated by such a plasma processing apparatus, first, the FPD substrate G in the cassette 142 is carried into the load lock chamber 120 by the substrate loading/unloading mechanism 130. . At this time, when the processed FPD substrate G is placed in the load lock chamber 120, the processed FPD substrate G is carried out from the load lock chamber 120, and is replaced with an unprocessed FPD substrate G. Once the FPD substrate G is carried into the load lock chamber 120, the gate valve 106 is closed. Next, after decompressing the inside of the load lock chamber 120 to a predetermined degree of vacuum, the gate valve 104 between the transfer chamber 1 1 〇 and the load lock chamber 1 20 is opened. Then, the FPD substrate G in the load lock chamber 120 is carried into the transfer chamber 110 by a transfer mechanism (not shown) in the transfer chamber 110, and then the gate valve 1 〇 4 is closed. The gate valve 102 between the transfer chamber 1 10 and the processing chamber 200 is opened, and the unprocessed FPD substrate G is carried into the mounting table in the processing chamber 200 by the transfer mechanism. At this time, if the processed FPD substrate G is used, the processed FPD substrate G is carried out and replaced with the unprocessed FPD substrate G. In the processing chamber 200, a processing gas is introduced into the processing chamber via a shower head, and high-frequency electric power is supplied to both the lower electrode or the upper electrode or the upper electrode and the lower electrode, so that plasma of the processing gas is generated in the lower electrode. Between the upper electrode and the upper electrode, the FPD substrate G held by the mounting table is subjected to predetermined plasma treatment. (Configuration example of processing room)
-12- 201220422 其次，一邊參照圖面一邊說明有關處理室200 構成例。在此是說明有關將本發明的電漿處理裝置 例如蝕刻玻璃基板等的FPD用的絕緣基板（以下 爲「基板」）G之電容耦合型電漿（CCP)蝕刻裝 處理室的構成例。圖2是表示處理室2 00的槪略構 面圖。 圖2所示的處理室200是具備例如表面被陽極 理（防蝕鋁處理）之鋁所構成的大致方筒形狀的處 202。處理容器202是被接地。在處理室200內的 設有載置台3 00，其係具有構成下部電極的基座3 置台3 00是具有作爲固定保持矩形的基板G之基 機構的機能，形成對應於矩形的基板G之矩形形 載置台的具體構成例會在往後敘述。 在載置台300的上方，以能夠和基座310平行 方式，對向配置有具有作爲上部電極機能的淋浴頭 淋浴頭210是被處理容器202的上部所支持，在內 緩衝室222，且在與基座310對向的下面形成有用 處理氣體的多數個吐出孔224。此淋浴頭210是被 與基座310 —起構成一對的平行平板電極。 在淋浴頭210的上面設有氣體導入口 226，在 入口 226連接氣體導入管228。氣體導入管228是 閉閥23 0，質量流控制器（MFC) 232來連接處理 給源234。 來自處理氣體供給源234的處理氣體是藉由質 的具體 適用於 亦簡稱 置時的 成的剖 氧化處 理容器 底部配 10。載 板保持 狀。此 對向的 210。 部具有 以吐出 接地， 氣體導 經由開 氣體供 量流控 -13- 201220422 制器（MFC) 23 2來控制成預定的流量，通過氣體導入口 226來導入至淋浴頭210的緩衝室222。處理氣體（蝕刻 氣體）可例如使用鹵素系的氣體，02氣體，Ar氣體等通 常被使用於此領域的氣體。 在處理室200的側壁設有用以開閉基板搬入出口 204 的閘閥102。並且，在處理室200的側壁的下方設有排氣 口，排氣口是經由排氣管208來連接包含真空泵（未圖示 )的排氣裝置209。藉由此排氣裝置209來將處理室200 的室內予以排氣，藉此可在電漿處理中將處理室2 00內維 持於預定的真空環境（例如I0mTorr =約1.33Pa)。 (適用基板保持機構的載置台的構成例） 在此，一邊參照圖2，圖3 —邊說明有關適用本發明 的基板保持機構的載置台3 00的具體構成例。圖3是說明 載置台300的傳熱氣體供給機構的構成例的圖。圖3是將 圖2所示的載置台300的上部分的剖面予以簡略化而顯示 者。在圖3中，爲了使說明簡單化，而省略圖2所示的靜 電保持部320。圖4A，圖4B是由上方來看載置台300的 表面的圖。圖4A是表示未載置基板G的狀態者，圖4B 是表示基板G無位移下被載置的狀態者。 如圖2所示’載置台300是具備：絕緣性的基底構件 3〇2 ’及設於此基底構件302上之導電體（例如鋁）所構 成的矩形方塊狀的基座310。另外，基座310的側面是如 圖2所示般以絕緣被膜3 1 1所覆蓋。-12- 201220422 Next, an example of the configuration of the processing chamber 200 will be described with reference to the drawings. Here, a configuration example of a capacitive coupling type plasma (CCP) etching processing chamber in which an insulating substrate (hereinafter referred to as "substrate") G for an FPD such as an etched glass substrate is used in the plasma processing apparatus of the present invention is described. Fig. 2 is a schematic cross-sectional view showing the processing chamber 200. The processing chamber 200 shown in Fig. 2 is a substantially rectangular tubular portion 202 having, for example, aluminum whose surface is anodized (aluminum-treated). Processing vessel 202 is grounded. In the processing chamber 200, there is provided a mounting table 300 having a pedestal 3 constituting a lower electrode. The mounting table 300 is a function of a base mechanism having a substrate G as a fixed holding rectangle, and a rectangular shape corresponding to the rectangular substrate G is formed. The specific configuration of the shaped mounting table will be described later. Above the mounting table 300, the shower head 210 having the shower head 210 having the function as the upper electrode is disposed in the upper side of the mounting table 300, and is supported by the upper portion of the container 202, in the inner buffer chamber 222, and A plurality of discharge holes 224 for processing gas are formed on the lower surface of the susceptor 310. This shower head 210 is a parallel plate electrode which is formed in a pair with the base 310. A gas introduction port 226 is provided on the upper surface of the shower head 210, and a gas introduction pipe 228 is connected to the inlet 226. The gas introduction pipe 228 is a closed valve 230, and a mass flow controller (MFC) 232 is connected to the process source 234. The process gas from the process gas supply source 234 is provided by a bottom portion of the oxidizing treatment vessel which is specifically adapted for use. The carrier is held in shape. 210 of this opposite. The portion has a discharge grounding, and the gas guide is controlled to a predetermined flow rate by the open gas supply flow control -13 - 201220422 (MFC) 23 2, and is introduced into the buffer chamber 222 of the shower head 210 through the gas introduction port 226. As the processing gas (etching gas), for example, a halogen-based gas, an 02 gas, an Ar gas or the like can be used as a gas which is generally used in the field. A gate valve 102 for opening and closing the substrate loading/outlet 204 is provided on the side wall of the processing chamber 200. Further, an exhaust port is provided below the side wall of the processing chamber 200, and the exhaust port is connected to the exhaust device 209 including a vacuum pump (not shown) via the exhaust pipe 208. The chamber of the processing chamber 200 is evacuated by means of the exhaust unit 209, whereby the processing chamber 200 can be maintained in a predetermined vacuum environment (e.g., I0mTorr = about 1.33 Pa) in the plasma processing. (Example of configuration of the mounting table to which the substrate holding mechanism is applied) Here, a specific configuration example of the mounting table 300 to which the substrate holding mechanism of the present invention is applied will be described with reference to Figs. 2 and 3 . Fig. 3 is a view for explaining an example of the configuration of a heat transfer gas supply mechanism of the mounting table 300. Fig. 3 is a view showing a simplified cross section of the upper portion of the mounting table 300 shown in Fig. 2 . In Fig. 3, the electrostatic holding portion 320 shown in Fig. 2 is omitted for simplification of the description. 4A and 4B are views of the surface of the mounting table 300 as seen from above. 4A shows a state in which the substrate G is not placed, and FIG. 4B shows a state in which the substrate G is placed without displacement. As shown in Fig. 2, the mounting table 300 is a rectangular base 301 having an insulating base member 3〇2' and a conductor (for example, aluminum) provided on the base member 302. Further, the side surface of the susceptor 310 is covered with an insulating film 31 1 as shown in Fig. 2 .
-14 - 201220422 在基座310上設有作爲在基板保持面保持基板G的 基板保持部之一例的靜電保持部320。靜電保持部320是 例如在下部介電質層與上部介電質層之間夾著電極板322 所構成。以構成載置台3 00的外框，包圍上述基底構件 302’基座310，靜電保持部320的周圍之方式，配設有 例如由陶瓷或石英的絕緣構件所構成的矩形框狀的外框部 33 0 ° 在靜電保持部320的電極板322是經由開關316來電 性連接直流（D C )電源3 1 5。開關3 1 6是例如可對電極板 322切換DC電源315及接地電位。另外，在電極板322 與直流（DC)電源315之間，亦可設置高頻遮斷部（未 圖示），其係遮斷來自基座310側的高頻，而阻止基座 310側的高頻洩漏至DC電源315側。高頻遮斷部是以具 有1ΜΩ以上的高電阻値的電阻器或通過直流的低通濾波 器所構成爲理想。 若開關3 16被切換至DC電源3 15側，則來自DC電 源315的DC電壓會被施加於電極板322。當此DC電壓 爲正極性的電壓時，負的電荷（電子，負離子）會被吸附 蓄積於基板G的上面。藉此，在基板G上面的負的面電 荷與電極板3 22之間夾著基板G及上部介電質層而互相 吸引的靜電吸附力亦即庫倫力會作用，基板G是以此靜 電吸附力來吸附保持於載置台300上。若開關316被切換 至接地側，則電極板3 22會被除電，隨之基板G也被除 電，上述庫倫力亦即靜電吸附力會被解除。 -15- 201220422 基座310是經由整合器312來電性連接高頻電源314 的輸出端子。高頻電源314的輸出頻率是被選擇比較商的 頻率，例如13.56 MHz »藉由來自被施加於基座310的高 頻電源314的高頻電力，在基板G的上面產生處理氣體 的電漿PZ，在基板G上施以預定的電漿蝕刻處理。 在基座310的內部設有冷媒流路340，被調整成預定 溫度的冷媒會從冷卻裝置（未圖示）流動於冷媒流路340 。可藉由此冷媒來將基座310的溫度調整於預定的溫度。 載置台3 00是具備傳熱氣體供給機構，其係於靜電保 持部320的基板保持面與基板G的背面之間以預定的壓 力來供給傳熱氣體（例如He氣體）。傳熱氣體供給機構 可將傳熱氣體以預定的壓力經由基座310內部的氣體流路 352來供給至基板G的背面。 傳熱氣體供給機構具體而言是例如圖3所示般構成。 亦即，在基座310的上面及其上的靜電保持部3 20 (在圖 3省略）設有多數個氣體孔3 54，該等的氣體孔3 54是連 通至上述氣體流路3 5 2。氣體孔3 54是在例如從基板保持 面Ls的外周往內側離開的氣體孔形成領域R以預定間隔 配列多數個。 氣體流路3 5 2是經由壓力調整閥（PCV : Pressure Control Valve) 3 62來連接例如供給He氣體作爲傳熱氣 體的He氣體供給源366。壓力調整閥（PCV ) 3 62是以供 給至氣體孔354側的He氣體的壓力能夠形成預定的壓力 之方式調整流量。-14 - 201220422 The susceptor 310 is provided with an electrostatic holding portion 320 as an example of a substrate holding portion for holding the substrate G on the substrate holding surface. The electrostatic holding portion 320 is formed, for example, by sandwiching the electrode plate 322 between the lower dielectric layer and the upper dielectric layer. A rectangular frame-shaped outer frame portion made of, for example, a ceramic or quartz insulating member is disposed so as to surround the base member 302' base 310 and the periphery of the electrostatic holding portion 320 so as to surround the outer frame of the mounting table 300. 33 0 ° The electrode plate 322 of the electrostatic holding portion 320 is electrically connected to a direct current (DC) power source 3 15 via a switch 316. The switch 3 16 is, for example, capable of switching the DC power source 315 and the ground potential to the electrode plate 322. Further, a high-frequency blocking portion (not shown) may be provided between the electrode plate 322 and the direct current (DC) power source 315, which blocks the high frequency from the side of the susceptor 310 and blocks the side of the susceptor 310. The high frequency leaks to the side of the DC power source 315. The high-frequency blocking portion is preferably a resistor having a high resistance Μ of 1 Μ Ω or more or a low-pass filter having a direct current. If the switch 3 16 is switched to the DC power source 3 15 side, a DC voltage from the DC power source 315 is applied to the electrode plate 322. When the DC voltage is a positive voltage, negative charges (electrons, negative ions) are adsorbed and accumulated on the substrate G. Thereby, the electrostatic adsorption force which attracts the substrate G and the upper dielectric layer between the negative surface charge on the substrate G and the electrode plate 32, that is, the Coulomb force acts, and the substrate G is electrostatically adsorbed by this. The force is adsorbed and held on the mounting table 300. If the switch 316 is switched to the ground side, the electrode plate 3 22 is de-energized, and the substrate G is also removed, and the Coulomb force, that is, the electrostatic adsorption force, is released. -15- 201220422 The susceptor 310 is an output terminal for electrically connecting the high frequency power source 314 via the integrator 312. The output frequency of the high frequency power source 314 is the frequency of the selected comparator, for example, 13.56 MHz » by the high frequency power from the high frequency power source 314 applied to the susceptor 310, the plasma PZ of the process gas is generated on the substrate G. A predetermined plasma etching treatment is applied to the substrate G. A refrigerant flow path 340 is provided inside the susceptor 310, and the refrigerant adjusted to a predetermined temperature flows from the cooling device (not shown) to the refrigerant flow path 340. The temperature of the susceptor 310 can be adjusted to a predetermined temperature by the refrigerant. The mounting table 300 is provided with a heat transfer gas supply means for supplying a heat transfer gas (for example, He gas) between the substrate holding surface of the electrostatic holding portion 320 and the back surface of the substrate G with a predetermined pressure. The heat transfer gas supply means can supply the heat transfer gas to the back surface of the substrate G via the gas flow path 352 inside the susceptor 310 at a predetermined pressure. Specifically, the heat transfer gas supply means is configured as shown in FIG. That is, a plurality of gas holes 3 54 are provided on the upper surface of the susceptor 310 and on the electrostatic holding portion 3 20 (omitted in FIG. 3), and the gas holes 3 54 are connected to the gas flow path 3 5 2 . The gas holes 3 54 are arranged at a predetermined interval, for example, in the gas hole forming region R which is separated from the outer periphery of the substrate holding surface Ls. The gas flow path 355 is connected to a He gas supply source 366 which supplies He gas as a heat transfer gas via a pressure regulating valve (PCV: Pressure Control Valve) 3 62, for example. The pressure regulating valve (PCV) 3 62 adjusts the flow rate such that the pressure of He gas supplied to the gas hole 354 side can form a predetermined pressure.
-16- 201220422 壓力調整閥（PCV ) 3 62是具備壓力感測器等（未圖 示），其係測定例如流通於氣體流路3 52的傳熱氣體的壓 力，且與未圖示的流量調整閥（例如壓電閥），流量計（ Flow Meters)，控制流量調整閥（壓電閥）的控制器一 體化構成。 另外，在圖3雖是顯示在氣體流路3 52使用壓力感測 器與流量調整閥被一體化的壓力調整閥（PCV ) 3 62的例 子，但並非限於此，亦可在氣體流路352個別設置該等壓 力感測器及流量調整閥。 並且，如此的壓力感測器，例如可舉壓力計（ Manometer )(例如電容壓力計（CM ))。此壓力感測器 可使用其他的壓力計，且流量調整閥並非限於壓電閥，例 如亦可爲螺線管閥。 該等壓力調整閥（PCV ) 362，He氣體供給源3 66是 分別被連接至控制處理裝置1 00的各部之控制部400。控 制部400是控制He氣體供給源3 66來使He氣體流出， 將設定壓力設定於壓力調整閥（PCV ) 362，在壓力調整 閥（PCV) 3 62使He氣體調整成預定的流量，而供給至 氣體流路3 52。壓力調整閥（PCV ) 362的控制器是例如 藉由PID控制來以氣體壓力能夠形成設定壓力的方式控制 壓電閥，而控制He氣體流量。藉此，He氣體會以預定的 壓力通過氣體流路3 52及氣體孔3 54來供給至基板G的 背面。 如此的傳熱氣體供給機構，因爲可在壓力調整閥（ -17- 201220422 PCV ) 3 62以內藏的壓力計來測定氣體流路3 52的壓力， 所以可根據其測定的He氣體的壓力來控制He氣體的流 量，且亦可使用內臓的流量計（Flow Meters)來監控He 氣體的漏出流量。He氣體的漏出流量是依基板G的位移 而變化，因此在監控He氣體的漏出流量下可檢測基板G 的位移。 可是，近年來隨基板G尺寸的更大型化，載置台300 的尺寸也比以往更大型化。爲了對應於此，而使He氣體 的氣體孔3 54的數量增多，且對該等氣體孔354供給He 氣體的氣體流路352也不得不增長。 如此氣體流路352越長，傳導（Conductance)越差 ，因此氣體流路352的壓力損失變大，難以所望的壓力來 供給He氣體至基板G的背面。所以，基板G位移時與未 位移時的He氣體的漏出流量的差些微，因此基板G的位 移檢測變難，其檢測精度也會有降低的問題。 在此，一邊參照利用大型的基板處理裝置所進行的實 驗結果，一邊更詳細說明。圖5是表示利用壓力調整閥（ PCV) 3 62的內藏壓力感測器所設定的He氣體設定壓力 與在基板G的背面所產生的He氣體壓力（基板背面壓力 )的關係。在圖5中“參“是基板背面壓力的目標値。相對 的，“〇“是接近外框部3 3 0的氣體孔3 5 4附近的基板背面 壓力，“□“是比氣體孔3 54更靠外框部3 3 0附近的基板背 面壓力。 像圖5的“•“所示的圖表那樣，最好基板背面壓力與 -18- 201220422 壓力調整閥（PCV ) 3 62的設定壓力相同。可是，像大型 的基板處理裝置那樣，因氣體流路352及氣體孔354的壓 力損失而傳導降低時，基板背面壓力會像圖5的“〇“所示 的圖表那樣比設定壓力更低。在比氣體孔354還靠外框部 330附近是基板背面壓力會更低。由此可知，越是從基板 G的中央往外側，流路352也越長，傳導也變差，基板背 面壓力也降低。 於是，如圖3所示，本實施形態是在比載置台3 00的 基板載置面Ls的氣體孔形成領域R還要外側配設貫通基 板載置面Ls的複數個壓力檢測孔370，由該等壓力檢測 孔370直接檢測基板G的背面壓力（在此是基板載置面 Ls的表面與基板G的背面之間的壓力）。若根據此，則 可在基板背面壓力降低大的部位設置複數個壓力檢測孔 3 70來檢測該部位的壓力。 而且，只要利用從如此的壓力檢測孔3 70所檢測的基 板背面壓力來控制壓力調整閥（PCV ) 362，便可控制He 氣體的流量，而使能夠彌補壓力損失所造成基板背面壓力 的降低。並且，所被檢測的基板背面壓力亦可利用於基板 G的位移檢測。若根據此，則因爲可以不受壓力損失的影 響而測定的基板背面壓力來檢測位移，所以可使位移的檢 測精度提升。而且，在一邊直接檢測基板背面壓力，一邊 控制He氣體的流量之下，可縮短基板背面壓力至安定爲 止的時間® 以下，更詳細說明有關具備如此的壓力檢測孔3 7 0的 -19- 201220422 本實施形態的載置台300的構成。圖3是有別於氣體 354另外藉由別的系統來獨立設置 4個壓力檢測 3 7〇a~3 7 0d的例子。圖3所示的壓力檢測孔3 70a〜3 70d 分別從基座3 1 0到基板載置面Ls的表面貫通形成。 在此的壓力檢測孔3 70a〜3 70d是如圖4A所示，配 於基板載置面Ls的4個角部。該等的配設位置是如圖 所示，若基板G未位移載置，則爲隱藏於基板G的位 。各壓力檢測孔370a〜37 0d是分別連接圖3所示的壓力 測器3 80a~3 80d。如此的壓力感測器3 80a〜3 80d，例如 舉電容壓力計（CM)，但亦可使用其他的壓力計或壓 感測器。 來自各壓力感測器380a~3 80d的檢測壓力是經由控 部400來輸入至壓力調整閥（PCV) 362，壓力調整閥 PCV) 3 62可根據該等的檢測壓力來控制He氣體的流 。在根據如此藉由各壓力感測器3 8 0a~3 80d所直接檢測 基板背面壓力來控制He氣體的流量之下，可縮短基板 面壓力至安定爲止的時間，且安定後可保持於設定壓力 並且，藉由在基板載置面Ls的4個角部分別設置 力檢測孔3 70a~3 70d，可各別檢測來自各壓力檢測 3 70a〜3 70d的壓力，因此亦可根據來自該等的各檢測壓 來進行基板偏移判定等基板載置狀態的確認。亦可判定 板G的位移形式（平行偏移，斜行偏移等）。 在此，一邊參照圖面，一邊說明含如此的基板G 位移判定之傳熱氣體控制的具體例。圖6是表示本實施 孔 孔 是 設 4B 置 感 可 力 制 ( 里 的 背 〇 壓 孔 力 基 的 形-16- 201220422 The pressure regulating valve (PCV) 3 62 is provided with a pressure sensor or the like (not shown), and measures the pressure of the heat transfer gas flowing through the gas flow path 3 52, for example, and a flow rate not shown. A regulating valve (for example, a piezoelectric valve), a flow meter (Flow Meters), and a controller for controlling a flow regulating valve (piezoelectric valve) are integrally formed. Further, although FIG. 3 shows an example in which the pressure regulating valve (PCV) 3 62 in which the pressure sensor and the flow rate adjusting valve are integrated in the gas flow path 352 is used, the present invention is not limited thereto, and may be in the gas flow path 352. These pressure sensors and flow regulating valves are individually provided. Further, such a pressure sensor may be, for example, a manometer (for example, a capacitance pressure gauge (CM)). Other pressure gauges can be used for this pressure sensor, and the flow regulating valve is not limited to a piezoelectric valve, and may be, for example, a solenoid valve. The pressure regulating valve (PCV) 362 and the He gas supply source 3 66 are connected to the control unit 400 of each unit of the control processing unit 100. The control unit 400 controls the He gas supply source 3 66 to flow the He gas, sets the set pressure to the pressure adjustment valve (PCV) 362, and adjusts the He gas to a predetermined flow rate by the pressure adjustment valve (PCV) 3 62 to supply the gas. To the gas flow path 3 52. The controller of the pressure regulating valve (PCV) 362 controls the piezoelectric valve to control the He gas flow rate by, for example, PID control to control the piezoelectric valve in such a manner that the gas pressure can form a set pressure. Thereby, He gas is supplied to the back surface of the substrate G through the gas flow path 3 52 and the gas hole 3 54 at a predetermined pressure. In such a heat transfer gas supply mechanism, since the pressure of the gas flow path 3 52 can be measured by a pressure gauge built in the pressure regulating valve ( -17 - 201220422 PCV ) 3 62, it can be controlled based on the measured pressure of He gas. The flow of He gas, and the flow meter of the helium can also be used to monitor the leakage flow of He gas. Since the leakage flow rate of the He gas changes depending on the displacement of the substrate G, the displacement of the substrate G can be detected while monitoring the leakage flow rate of the He gas. However, in recent years, as the size of the substrate G has increased, the size of the mounting table 300 has also increased in size. In response to this, the number of gas holes 3 54 of He gas is increased, and the gas flow path 352 for supplying He gas to the gas holes 354 has to be increased. The longer the gas flow path 352 is, the worse the conduction is. Therefore, the pressure loss of the gas flow path 352 is increased, and it is difficult to supply He gas to the back surface of the substrate G at a desired pressure. Therefore, the difference between the leakage flow rate of the He gas at the time of displacement of the substrate G and the displacement of the He gas is small, so that the displacement detection of the substrate G is difficult, and the detection accuracy is also lowered. Here, the results of experiments performed by a large-sized substrate processing apparatus will be described in more detail. Fig. 5 is a view showing the relationship between the He gas set pressure set by the built-in pressure sensor of the pressure adjusting valve (PCV) 3 62 and the He gas pressure (substrate back pressure) generated on the back surface of the substrate G. In Fig. 5, "the reference" is the target 压力 of the back pressure of the substrate. On the other hand, "〇" is the pressure on the back surface of the substrate near the gas hole 3 5 4 of the outer frame portion 330, and "□" is the pressure on the back surface of the substrate near the outer frame portion 330 from the gas hole 3 54. As shown in the chart "•" in Fig. 5, it is preferable that the back pressure of the substrate is the same as the set pressure of the -18-201220422 pressure regulating valve (PCV) 3 62. However, when the conduction is lowered by the pressure loss of the gas flow path 352 and the gas hole 354 as in the case of the large-sized substrate processing apparatus, the back surface pressure of the substrate is lower than the set pressure as shown by the graph "〇" in Fig. 5 . In the vicinity of the outer frame portion 330 than the gas hole 354, the back pressure of the substrate is lower. From this, it is understood that the longer the flow path 352 is from the center to the outside of the substrate G, the conduction is also deteriorated, and the pressure on the back surface of the substrate is also lowered. Then, as shown in FIG. 3, in the present embodiment, a plurality of pressure detecting holes 370 penetrating the substrate mounting surface Ls are disposed outside the gas hole forming region R of the substrate mounting surface Ls of the mounting table 300. The pressure detecting holes 370 directly detect the back surface pressure of the substrate G (here, the pressure between the surface of the substrate mounting surface Ls and the back surface of the substrate G). According to this, a plurality of pressure detecting holes 370 can be provided at a portion where the pressure on the back surface of the substrate is largely lowered to detect the pressure at the portion. Further, by controlling the pressure regulating valve (PCV) 362 by the pressure of the back surface of the substrate detected from the pressure detecting hole 370, the flow rate of the He gas can be controlled, and the pressure on the back surface of the substrate can be compensated for by the pressure loss. Further, the detected back surface pressure of the substrate can also be used for displacement detection of the substrate G. According to this, since the displacement can be detected without the pressure of the back surface of the substrate measured by the influence of the pressure loss, the detection accuracy of the displacement can be improved. In addition, when the pressure on the back surface of the substrate is directly detected, the flow rate of the back surface of the substrate can be shortened to a time below the stability, and the time below the stability of the substrate can be shortened. -19-201220422, which has such a pressure detecting hole 307 The configuration of the mounting table 300 of the present embodiment. Fig. 3 shows an example in which four pressure detections 3 7〇a~3 7 0d are independently set by another system different from the gas 354. The pressure detecting holes 3 70a to 3 70d shown in Fig. 3 are formed to penetrate from the surface of the susceptor 3 10 to the substrate mounting surface Ls. Here, the pressure detecting holes 3 70a to 3 70d are four corner portions provided on the substrate mounting surface Ls as shown in Fig. 4A. These arrangement positions are as shown in the figure, and if the substrate G is not displaced and placed, it is hidden in the position of the substrate G. The pressure detecting holes 370a to 37 0d are connected to the pressure measuring devices 3 80a to 3 80d shown in Fig. 3, respectively. Such pressure sensors 3 80a to 3 80d are, for example, capacitor pressure gauges (CM), but other pressure gauges or pressure sensors can also be used. The detected pressure from each of the pressure sensors 380a to 380d is input to the pressure regulating valve (PCV) 362 via the control unit 400, and the pressure regulating valve PCV) 3 62 can control the flow of the He gas according to the detected pressures. When the flow rate of the He gas is directly detected by the pressure of the back surface of the substrate directly by the pressure sensors 3 80 0 to 3 80 d, the time until the surface pressure of the substrate is stabilized can be shortened, and the set pressure can be maintained after the stabilization. Further, by providing the force detecting holes 3 70a to 3 70d at the four corner portions of the substrate mounting surface Ls, the pressures from the respective pressure detecting portions 3 70a to 3 70d can be detected individually, and therefore, Each of the detection pressures is used to confirm the substrate placement state such as the substrate offset determination. It is also possible to determine the displacement form of the plate G (parallel offset, skew offset, etc.). Here, a specific example of the heat transfer gas control including the determination of the displacement of the substrate G will be described with reference to the drawings. Figure 6 is a view showing that the hole of the present embodiment is made of a 4B sensible force (the shape of the back 〇 press hole force base)
S -20- 201220422 態的傳熱氣體控制的主程序的流程圖，圖7是表示圖 示的基板偏移判定處理的副程序的流程圖。傳熱氣體 是在載置台300上載置基板G被靜電吸附保持後藉 制部400來執行。 首先，如圖6所示，控制部400是在步驟S 1 10 從He氣體供給源366導入傳熱氣體的He氣體至氣 路3 52，在步驟S120以各壓力感測器3 80a〜3 8 0d來 檢測基板背面壓力，一邊以該各檢測壓力能夠形成設 力的方式開始壓力調整閥（PCV) 3 62的流量控制。 具體而言，控制部400是將設定壓力設定於壓力 閥（PCV ) 3 62，即時（Realtime )輸出來自壓力感 3 8 0a〜3 8 0d的各檢測壓力，而使控制He氣體的流量 即，壓力調整閥（PCV) 362是一旦從控制部400輸 檢測壓力，則以各檢測壓力能夠形成設定壓力的方式 地控制閥的開度，來調整He氣體的流量。 一旦如此He氣體的供給開始，則會開始充塡於 流路3 52或靜電保持部320的基板保持面與基板G 面之間。此情況，氣體流路352越長，He氣體完全 塡而至其壓力安定爲止越花時間，但在此是一邊直接 背面壓力，一邊調整He氣體的流量，所以最初的充 調整成流量多，一旦某程度的時間經過，則可控制成 流量，因此可縮短壓力至安定爲止的時間。 其次，控制部400是根據壓力感測器3 8 0a〜3 8 0d 檢測壓力來進行基板載置狀態的確認（步驟S 1 3 0， 6所 控制 由控 開始 體流 一邊 定壓 調整 測器 。亦 入各 自動 氣體 的背 被充 檢測 塡可 微調 的各 S200 -21 - 201220422 ，S300 ) »亦即，首先在步驟S130，控制部400是判斷 各檢測壓力全部是否均衡。另外，如上述般，He氣體導 入剛開始後的流量是變多，所以在步驟S 1 3 0的判斷是可 等待流量至某程度安定（至預定時間經過）之後進行。 在步驟S 1 3 0判斷成各檢測壓力爲不均衡時，在步驟 S200進行基板偏移判定處理，在步驟S3 00進行基板偏移 失敗處理。在步驟S300的基板偏移失敗處理是停止He 氣體的供給，且將步驟S2 00的判定結果顯示於顯示器， 或以警報告知。另外，有關步驟S200的基板偏移判定處 理的具體例會在往後敘述。 相對的，在步驟S 1 3 0判斷成各檢測壓力的全部爲均 衡時，根據壓力感測器3 80a〜3 80d的各檢測壓力來進行 He氣體供給狀態的確認（步驟S140，S150，S170，S172 )。亦即，首先在步驟S140判斷各檢測壓力的全部是否 到達設定壓力。 在步驟1 40判斷成各檢測壓力的全部到達設定壓力時 ，在步驟S150判斷壓力調整閥（PCV) 362的He氣體流 量是否爲預定値以下。此時，判斷成He氣體流量爲預定 値以下時，在步驟S160判斷成基板載置狀態OK，He氣 體的供給狀態OK，開始基板G的處理。 並且，在步驟S 1 4 0判斷成任一的檢測壓力未到達設 定壓力時，或在步驟S150判斷成He氣體流量超過預定 値時，移至步驟S170的處理。 在步驟S 1 70是比較自He氣體導入開始的經過時間A flowchart of the main routine of the heat transfer gas control in the S-20-201220422 state, and Fig. 7 is a flowchart showing a subroutine of the substrate offset determination process shown. The heat transfer gas is executed by the borrowing unit 400 after the substrate G is placed on the mounting table 300 and held by the electrostatic adsorption. First, as shown in FIG. 6, the control unit 400 is a He gas that introduces a heat transfer gas from the He gas supply source 366 to the gas path 352 in step S110, and each pressure sensor 380a to 380 in step S120. The pressure on the back surface of the substrate is detected in 0d, and the flow rate control of the pressure regulating valve (PCV) 3 62 is started so that the respective detection pressures can form a force. Specifically, the control unit 400 sets the set pressure to the pressure valve (PCV) 3 62, and immediately outputs the respective detection pressures from the pressure senses 380 to 380d, thereby controlling the flow rate of the He gas. When the pressure is detected from the control unit 400, the pressure adjustment valve (PCV) 362 controls the opening degree of the valve so that the set pressure can be formed for each detection pressure, thereby adjusting the flow rate of the He gas. When the supply of He gas is started as described above, charging between the substrate holding surface of the flow path 352 or the electrostatic holding portion 320 and the surface of the substrate G is started. In this case, the longer the gas flow path 352 is, the more the He gas is completely entangled and the time until the pressure is stabilized. However, since the flow rate of the He gas is adjusted while the direct back pressure is applied, the first charge is adjusted to have a large flow rate. When a certain amount of time passes, the flow rate can be controlled, so that the time until the pressure is stabilized can be shortened. Next, the control unit 400 confirms the substrate placement state based on the pressures detected by the pressure sensors 3 80 0 to 3 8 0d (step S 1 3 0, 6 controls the constant pressure adjustment detector from the control start flow. Each of S200-21-201220422, S300) in which the back charge of each automatic gas is detected is finely adjusted. That is, first, in step S130, the control unit 400 determines whether or not all the detected pressures are equalized. Further, as described above, the flow rate immediately after the start of He gas introduction is increased, so that the determination in step S130 can be performed after waiting for the flow rate to be stabilized to a certain degree (to a predetermined time lapse). When it is determined in step S130 to that the respective detection pressures are unbalanced, the substrate offset determination processing is performed in step S200, and the substrate offset failure processing is performed in step S3. The substrate offset failure processing in step S300 is to stop the supply of He gas, and display the determination result of step S2 00 on the display, or to notify by an alarm. Further, a specific example of the substrate offset determination processing in step S200 will be described later. On the other hand, when it is determined in step S130 to that all of the detection pressures are equalized, the He gas supply state is confirmed based on the respective detection pressures of the pressure sensors 380a to 80d (steps S140, S150, and S170, S172). That is, first, in step S140, it is judged whether or not all of the detected pressures have reached the set pressure. When it is determined in step 144 that all of the detected pressures have reached the set pressure, it is determined in step S150 whether or not the He gas flow of the pressure regulating valve (PCV) 362 is equal to or less than a predetermined value. At this time, when it is determined that the He gas flow rate is equal to or lower than the predetermined value, the substrate mounting state is determined to be OK in step S160, and the supply state of the He gas is OK, and the processing of the substrate G is started. When it is determined in step S1404 that any of the detected pressures has not reached the set pressure, or if it is determined in step S150 that the He gas flow rate exceeds the predetermined value, the process proceeds to step S170. In step S 1 70, the elapsed time from the start of the introduction of He gas is compared.
S -22- 201220422 與預先設定的暫停時間（time out)，判斷是否超過暫停 時間。在步驟S 1 70判斷成未超過暫停時間時，回到步驟 S1 20繼續進行He氣體的流量控制。在步驟S170判斷成 超過暫停時間時，因爲發生某些的異常，所以在步驟 S 172進行等待安定失敗處理。 例如各檢測壓力的全部爲均衡（S130)，卻He氣體 流量仍舊超過預定値（S1 50)，且超過暫停時間時（S1 70 )，有可能是基板G未被載置於載置台3 00上，或發生 基板G的吸附不良。於是，如此的情況會在步驟S172進 行等待安定失敗處理。等待安定失敗處理是例如停止He 氣體的供給，且在顯示器顯示失敗，或以警報告知。 在根據步驟S160來開始基板G的處理之後，會繼續 進行根據來自壓力感測器3 80a〜38 Od的基板背面的各檢測 壓力之He氣體的流量控制。藉此，不受氣體流路352等 的傳導的影響，將He氣體的基板背面壓力經常保持於設 定壓力。然後，在步驟S 162等待基板G的處理終了，判 斷成處理終了時，在步驟S164停止He氣體的供給，壓 力調整閥（PCV ) 3 62的流量控制也停止，而完成一連串 的電熱氣體控制。 另外，在進行基板G的處理的期間亦可進行步驟 S130，S200，S 3 00的監視。若根據此，則在基板G的處 理中發生基板載置狀態的異常時亦可減輕異常放電的風險 〇 其次，一邊參照圖7，一邊說明圖6所示的基板偏移 -23- 201220422 判定處理的具體例。在此是按照藉由壓力感測器 380a〜380d所檢測之壓力檢測孔3 70a〜3 70d的各檢測壓力 的不均衡形式來判定基板G的位移形式。另外’有關載 置台3 00上的基板G的有無或基板G的靜電吸附不良的 有無，在此是不被判定，如上述般在步驟S 1 72形成等待 安定失敗處理。 如圖7所示，基板偏移判定處理是在步驟 S210, S230，S250判斷壓力檢測孔370a〜370d的各檢測壓力有 怎樣的不均衡。具體而言，在步驟S2 10是判斷平行2角 彼此間的檢測壓力的不均衡與否，在步驟S230是判斷3 角與其他1角的檢測壓力的不均衡與否，在步驟S25 0是 判斷對角2角彼此間的檢測壓力的不均衡與否。 在步驟S2 1 0判斷成平行2角彼此間的檢測壓力的不 均衡時，在步驟S220判定成一方向的基板平行偏移。這 是因爲例如圖8A所示，基板G平行偏移於壓力檢測孔 3 70c，3 70d側的一方向時，在平行的2角的壓力檢測孔 370a，370b的檢測壓力會比在其他的平行2角的壓力檢 測孔3 70c，3 70d的檢測壓力更低。 又’如圖8B所示，基板G平行偏移於壓力檢測孔 3 70a ’ 3 70c側的一方向時，在平行的2角的壓力檢測孔 3 70b ’ 3 70d的檢測壓力會比在其他的平行2角的壓力檢 測孔3 7 0 a ’ 3 7 0 c的檢測壓力更低。在步驟s 2 2 0判定成一 方向的基板平行偏移時，回到圖6所示的主程序，在步驟 S3 00將該判定結果顯示於顯示器，以警報告知。S -22- 201220422 Determines whether the pause time is exceeded with a preset time out. When it is judged in step S1 70 that the pause time has not been exceeded, the flow returns to step S1 20 to continue the flow control of the He gas. When it is judged in step S170 that the pause time has elapsed, since some abnormality has occurred, the wait for stability failure processing is performed in step S172. For example, all of the detection pressures are equalized (S130), but the He gas flow rate still exceeds the predetermined 値 (S1 50), and when the pause time is exceeded (S1 70), there is a possibility that the substrate G is not placed on the mounting table 300. Or the adsorption of the substrate G is poor. Thus, such a situation will be awaiting a stabilization failure process in step S172. Waiting for the stability failure process is, for example, stopping the supply of He gas, and the display fails, or is notified by an alarm. After the processing of the substrate G is started in accordance with step S160, the flow rate control of He gas according to the respective detection pressures of the back surface of the substrate from the pressure sensors 380a to 38 Od is continued. Thereby, the back pressure of the substrate of the He gas is constantly maintained at the set pressure without being affected by the conduction of the gas flow path 352 or the like. Then, in step S162, when the processing of the substrate G is finished, and it is judged that the processing is finished, the supply of He gas is stopped in step S164, and the flow rate control of the pressure regulating valve (PCV) 3 62 is also stopped, and a series of electrothermal gas control is completed. Further, the monitoring of steps S130, S200, and S300 may be performed while the processing of the substrate G is being performed. According to this, when the abnormality of the substrate placement state occurs during the processing of the substrate G, the risk of abnormal discharge can be reduced. Next, the substrate offset -23 - 201220422 determination processing shown in FIG. 6 will be described with reference to FIG. 7 . Specific example. Here, the displacement form of the substrate G is determined in accordance with the unbalanced form of the respective detection pressures of the pressure detecting holes 3 70a to 3 70d detected by the pressure sensors 380a to 380d. In addition, the presence or absence of the substrate G on the mounting table 300 or the presence or absence of the electrostatic adsorption failure of the substrate G is not determined here, and the waiting for stability failure processing is formed in step S1 72 as described above. As shown in Fig. 7, in the substrate offset determination processing, in steps S210, S230, S250 determine how the respective detection pressures of the pressure detecting holes 370a to 370d are unbalanced. Specifically, in step S210, it is determined whether or not the detection pressure of the parallel two corners is unbalanced. In step S230, it is determined whether the detection pressure of the three corners and the other one angle is unbalanced, and it is determined in step S25. The imbalance of the detection pressure between the two corners of the diagonal is not the same. When it is determined in step S2 1 0 that the detection pressures of the two parallel angles are not equal to each other, it is determined in step S220 that the substrates in one direction are shifted in parallel. This is because, for example, as shown in Fig. 8A, when the substrate G is displaced in parallel in one direction of the pressure detecting holes 3 70c, 3 70d side, the detection pressures of the pressure detecting holes 370a, 370b at the parallel two corners are parallel to others. The pressure detection holes 3 70c, 3 70d of the 2 corners have a lower detection pressure. Further, as shown in FIG. 8B, when the substrate G is parallelly displaced in one direction on the side of the pressure detecting hole 3 70a ' 3 70c, the detection pressure of the pressure detecting hole 3 70b ' 3 70d at two parallel angles is higher than that of the other. The pressure detection holes of the parallel two angles 3 7 0 a ' 3 7 0 c have a lower detection pressure. When it is determined in step s 2 2 0 that the substrate in one direction is shifted in parallel, the main routine shown in Fig. 6 is returned, and the result of the determination is displayed on the display in step S3 00 to be notified by an alarm.
S -24- 201220422 又，在步驟S230判斷成3角與其他1角的 的不均衡時，在步驟S240判定成二方向的基板 。這是因爲例如圖9A所示，基板G平行偏移於 孔3 70c，3 70d側與壓力檢測孔370a，370c側的 ，在3角的壓力檢測孔370a，370b，370d的檢 比在其他的1角的壓力檢測孔370c的檢測壓力夏 又，如圖9B所示，基板G平行偏移於壓 3 70a，3 70b側與壓力檢測孔370b，370d側的二 在3角的壓力檢測孔3 70a，3 70c，3 70d的檢測 在其他的1角的壓力檢測孔3 70b的檢測壓力更 在步驟S240判定成二方向的基板平行偏移，則 所示的主ί呈序，在步驟S3 00將該判定結果顯示 ，以警報告知。 在步驟S2 5 0判斷成對角2角彼此間的檢測 均衡時，在步驟S260判定成基板斜行偏移。這 如圖10Α所示，基板G向左斜行偏移時，在對: 壓力檢測孔3 70a，3 70d的檢測壓力會比其他的! 的壓力檢測孔3 70b，3 70c的檢測壓力更低。 又，如圖10B所示，基板G向右斜行偏移 角2角的壓力檢測孔37〇b，3 70c的檢測壓力會 的對角2角的壓力檢測孔370a，3 70d的檢測壓 如此，可根據來自各壓力檢測孔3 70a〜37 0d的檢 不均衡形式來判定到基板G的位移形式。一 S 260判定成基板斜行偏移，則回到圖6所示的 檢測壓力 平行偏移 壓力檢測 二方向時 測壓力會 i低。 力檢測孔 方向時， 壓力會比 低。一旦 回到圖 6 於顯示器 壓力的不 是因爲例 与2角的 付角2角 時，在對 比在其他 力更低。 測壓力的 &在步驟 主程序* -25- 201220422 在步驟S 3 0 0將其判定結果顯示於顯示器，以警報告知。 另外，有步驟S210，S230，S250以外的檢測壓力的 不均衡時，在步驟S270設爲判定失敗。因爲此情況有可 能是例如基板破裂或壓力感測器故障等其他的原因發生。 若如此根據本實施形態，則在基板載置面Ls的4個 角部有別於氣體孔3 54獨立配設各壓力檢測孔370a〜3 70d 之下，可直接檢測出基板背面壓力，可根據該檢測壓力來 進行傳熱氣體的流量調整及基板G的位移檢測雙方。藉 此，載置台300的更大型化也可充分地對應。亦即，即使 氣體流路352變長，還是可進行傳熱氣體的流量調整，使 能夠彌補該氣體流路3 5 2的壓力損失，可使基板G的位 移檢測精度提升。又，由於可縮短傳熱氣體的壓力至安定 爲止的時間，因此基板G的位移檢測所花的時間也可縮 短。 另外，各壓力檢測孔3 70a〜3 70d的構成並非限於圖3 所示者。亦可構成對各壓力檢測孔3 70a~370d也供給He 氣體。具體而言，例如圖11所示，亦可連接各壓力檢測 孔3 70a~3 70d與連通路3 72。藉此，亦可從各壓力檢測孔 3 70a~3 70d經由連通路3 72來供給He氣體至基板載置面 Ls的4個角部，因此可縮短傳熱氣體的壓力至安定爲止 的時間，且當基板G的位移發生時漏出流量會增加，因 此更容易檢測出位移。 並且，如圖12所示，亦可經由壓力調整閥（PC V ) 3 62來將He氣體供給源366直接連接至各壓力檢測孔Further, when it is determined in step S230 that the three corners are not equal to the other one, the substrate in the two directions is determined in step S240. This is because, for example, as shown in FIG. 9A, the substrate G is offset in parallel with the holes 3 70c, 3 70d side and the pressure detecting holes 370a, 370c, and the pressure detecting holes 370a, 370b, 370d at the 3 corners are in the other. The detection pressure of the one-angle pressure detecting hole 370c is as shown in FIG. 9B, and the substrate G is offset in parallel with the pressure detecting holes 3 at the pressures 3 70a, 3 70b side and the pressure detecting holes 370b, 370d side at the 3 corners. The detection of 70a, 3 70c, 3 70d at the other one corner of the pressure detecting hole 3 70b is further determined in step S240 that the substrate in the two directions is shifted in parallel, and the main sequence shown is in step S3 00. The result of this determination is displayed and notified by an alarm. When it is determined in step S2500 that the detection of the diagonal angles is equal to each other, it is determined in step S260 that the substrate is skewed. As shown in FIG. 10A, when the substrate G is obliquely shifted to the left, the detection pressure of the pressure detecting holes 3 70a, 3 70d is lower than that of the other pressure detecting holes 3 70b, 3 70c. . Further, as shown in Fig. 10B, the detection pressure of the pressure detecting holes 370a, 3 70d at the diagonally opposite corners of the pressure detecting holes 37〇b, 3 70c at which the substrate G is obliquely shifted to the right by the right angle is so The displacement form of the substrate G can be determined based on the unbalanced form from the respective pressure detecting holes 3 70a to 37 0d. When an S 260 determines that the substrate is skewed, it returns to the detection pressure shown in Fig. 6. The parallel pressure is detected in the two directions, and the measured pressure is low. When the force is detected in the direction of the hole, the pressure will be lower. Once back to Figure 6, the pressure on the display is not due to the angle of the corner with the 2 corners of the angle, the contrast is lower at the other forces. The measured pressure & in the main program * -25- 201220422 The judgment result is displayed on the display in step S 3 0 0, and the alarm is notified. Further, when there is an imbalance in the detected pressure other than steps S210, S230, and S250, the determination is failed in step S270. This may be due to other reasons such as substrate rupture or pressure sensor failure. According to the present embodiment, the pressure of the back surface of the substrate can be directly detected at four corners of the substrate mounting surface Ls, and the pressure detecting holes 370a to 70d are disposed independently of the gas holes 3 54. This detection pressure performs both the flow rate adjustment of the heat transfer gas and the displacement detection of the substrate G. As a result, the size of the mounting table 300 can be sufficiently increased. In other words, even if the gas flow path 352 is lengthened, the flow rate of the heat transfer gas can be adjusted, so that the pressure loss of the gas flow path 325 can be compensated, and the displacement detection accuracy of the substrate G can be improved. Further, since the time until the pressure of the heat transfer gas can be shortened can be shortened, the time taken for the displacement detection of the substrate G can be shortened. Further, the configuration of each of the pressure detecting holes 3 70a to 3 70d is not limited to that shown in Fig. 3 . It is also possible to provide He gas to each of the pressure detecting holes 3 70a to 370d. Specifically, for example, as shown in Fig. 11, each of the pressure detecting holes 3 70a to 3 70d and the communication path 3 72 may be connected. Thereby, the He gas can be supplied from the respective pressure detecting holes 3 70a to 3 70d to the four corners of the substrate mounting surface Ls via the communication path 3 72 , so that the time until the pressure of the heat transfer gas is stabilized can be shortened. And when the displacement of the substrate G occurs, the leakage flow rate increases, so that it is easier to detect the displacement. Further, as shown in FIG. 12, the He gas supply source 366 can also be directly connected to each pressure detecting hole via a pressure regulating valve (PC V ) 3 62.
S -26- 201220422 3 70a~370d。藉此，可不受氣體流路3 52的壓力損失的影 響來供給He氣體至各壓力檢測孔370a〜370d，所以可縮 短傳熱氣體的壓力至安定爲止的時間，且當基板G的位 移發生時漏出流量會增加，因此更容易檢測出位移。 而且，如圖 13所示，亦可在各壓力檢測孔 370a〜370d不設置壓力感測器，利用內藏壓力感測器363 及流量計（Flow Meters) 364的壓力調整閥（PCV) 362 來監控來自各壓力檢測孔370a〜3 70d的壓力或總漏出流量 ，而只檢測出有無基板G的位移。 又，亦可有別於各壓力檢測孔370a~370d另外配設檢 測出基板背面壓力的其他的壓力檢測孔。具體而言，例如 圖1 4所示，亦可在基板載置面Ls的氣體孔形成領域R的 外側，有別於各壓力檢測孔3 70a~3 70d的位置設置其他的 壓力檢測孔3 74。在其他的壓力檢測孔3 74連接壓力感測 器382，根據其檢測壓力來控制壓力調整閥（PCV) 362。 藉此可任務分擔，在各壓力檢測孔3 70a〜3 70d只檢測 出基板G的位移，而藉由其他的壓力檢測孔3 74來檢測 出用以控制壓力調整閥（PCV ) 3 62的背面壓力。 又，亦可如圖15所示連接各壓力檢測孔3 70a~3 70d 與連通路372，而取代經由壓力調整閥（PCV ) 362來將 He氣體供給源3 66直接連接至各壓力檢測孔3 70a~3 70d， 此情況，亦根據其他的壓力檢測孔3 74的檢測壓力來調整 壓力調整閥（PCV ) 362，所以傳熱氣體的壓力至安定爲 止的時間可縮短。 -27- 201220422 另外，如此的其他的壓力檢測孔3 74的配置位置是配 置於基板載置面Ls的氣體孔形成領域R的外側部位（例 如圖16的A1部位）。此情況，其他的壓力檢測孔是可 只設置1個，或設置複數個。設置複數個時，亦可更配置 於氣體孔形成領域R的內側部位（例如圖16的A2部位 )或氣體孔形成領域R的中央部位（例如圖16的A3部 位）。 並且，上述壓力檢測孔370a〜3 70d及其他的壓力檢測 孔3 74是形成比氣體孔3 54更大的孔徑爲理想，但爲了防 止露出時發生異常放電，亦可嵌入例如圖1 7所示那樣形 成有多數個孔3 78的流路擋塊3 76。藉此，即使擴大壓力 檢測孔3 70a~3 70d及其他的壓力檢測孔374的直徑，還是 可以防止露出時的異常放電。而且，在流路擋塊376設置 多數的孔3 78之下，傳導的降低也可防止。 以上，一邊參照附圖，一邊說明有關本發明的較佳實 施形態，但當然本發明並非限於該例。只要是該當業者， 便可在申請專利範圍所記載的範疇內思及各種的變更例或 修正例，當然該等亦屬於本發明的技術範圍。 例如在上述實施形態中是舉電容耦合型電漿（ Capacitively Coupled Plasma; CCP)處理裝置爲例來說 明可適用本發明的電漿處理裝置，但並非限於此，亦可將 本發明適用於可在低壓下產生高密度的電漿之感應耦合電 漿（Inductively Coupled Plasma ; ICP)處理裝置。 其他，亦可將本發明適用於利用螺旋波電漿生成，S -26- 201220422 3 70a~370d. Thereby, the He gas can be supplied to the pressure detecting holes 370a to 370d without being affected by the pressure loss of the gas flow path 352, so that the time until the pressure of the heat transfer gas is stabilized can be shortened, and when the displacement of the substrate G occurs. The leakage flow will increase, so it is easier to detect the displacement. Further, as shown in FIG. 13, a pressure sensor may not be provided in each of the pressure detecting holes 370a to 370d, and the pressure regulating valve (PCV) 362 of the built-in pressure sensor 363 and the flow meter (364) may be used. The pressure or the total leak flow rate from each of the pressure detecting holes 370a to 3 70d is monitored, and only the displacement of the substrate G is detected. Further, another pressure detecting hole for detecting the pressure on the back surface of the substrate may be separately disposed in each of the pressure detecting holes 370a to 370d. Specifically, for example, as shown in FIG. 14, other pressure detecting holes 3 74 may be provided outside the gas hole forming region R of the substrate mounting surface Ls, and at positions different from the pressure detecting holes 3 70a to 3 70d. . The pressure sensor 382 is connected to the other pressure detecting hole 3 74, and the pressure regulating valve (PCV) 362 is controlled based on the detected pressure. Thereby, the task can be shared, and only the displacement of the substrate G is detected in each of the pressure detecting holes 3 70a to 3 70d, and the back surface for controlling the pressure regulating valve (PCV) 3 62 is detected by the other pressure detecting holes 3 74. pressure. Further, as shown in FIG. 15, the pressure detecting holes 3 70a to 3 70d and the communication path 372 may be connected instead of directly connecting the He gas supply source 3 66 to the respective pressure detecting holes 3 via the pressure regulating valve (PCV) 362. 70a to 3 70d. In this case, the pressure regulating valve (PCV) 362 is also adjusted according to the detection pressure of the other pressure detecting holes 3 74, so that the time until the pressure of the heat transfer gas is stabilized can be shortened. -27-201220422 The position of the other pressure detecting hole 3 74 is the outer portion of the gas hole forming region R (for example, the portion A1 in Fig. 16) which is disposed on the substrate mounting surface Ls. In this case, the other pressure detecting holes can be set to only one or a plurality of pressure detecting holes. When a plurality of the plurality of holes are provided, they may be disposed further in the inner portion of the gas hole forming region R (for example, the portion A2 in Fig. 16) or the central portion in the gas hole forming region R (for example, the portion A3 in Fig. 16). Further, it is preferable that the pressure detecting holes 370a to 370d and the other pressure detecting holes 374 are formed to have a larger diameter than the gas holes 354. However, in order to prevent abnormal discharge during exposure, it may be embedded as shown in FIG. A flow path block 3 76 having a plurality of holes 3 78 is formed in that manner. Thereby, even if the diameters of the pressure detecting holes 3 70a to 3 70d and the other pressure detecting holes 374 are enlarged, abnormal discharge at the time of exposure can be prevented. Moreover, under the flow path block 376 provided with a plurality of holes 3 78, the reduction in conduction can also be prevented. The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the invention is not limited thereto. As long as it is the person in charge, various modifications and corrections can be made within the scope of the patent application. Of course, these are also within the technical scope of the present invention. For example, in the above embodiment, a capacitively coupled plasma (CCP) processing apparatus is described as an example to describe a plasma processing apparatus to which the present invention is applicable. However, the present invention is not limited thereto, and the present invention can also be applied to An Inductively Coupled Plasma (ICP) processing device that produces high-density plasma at low pressure. Others, the invention may also be applied to the use of spiral wave plasma generation,
-28- 201220422 ECR( Electron Cyclotron Resonance)電漿生成作爲電漿 生成的電漿處理裝置等。 [產業上的利用可能性] 本發明是可適用於對平面顯示器（FPD )用玻璃基板 等的大型基板實施電漿處理的電漿處理裝置，基板保持機 構，基板位移檢測方法。 【圖式簡單說明】 圖1是本發明的實施形態的處理裝置的外觀立體圖。 圖2是構成同實施形態的電漿處理裝置的處理室的剖 面圖。 圖3是用以說明同實施形態的傳熱氣體供給機構的構 成例的圖。 圖4A是由上方來看圖3所示的載置台的表面的圖， 顯示未載置基板的狀態。 圖4B是由上方來看圖3所示的載置台的表面的圖， 顯示載置有基板的狀態。 圖5是表示利用壓力調整閥（PCV )內藏的壓力感測 器來設定之He氣體壓力與基板背面的He氣體壓力的關 係圖表。 圖6是表示同實施形態的傳熱氣體控制的主程序的流 程圖。 圖7是表示圖6所示的基板偏移判定處理的副程序的 -29- 201220422 流程圖。 圖8A是用以說明位移形式的圖，顯示一方向的基板 平行偏移發生時的具體例。 圖8B是用以說明位移形式的圖，顯示一方向的基板 平行偏移發生時的其他具體例。 圖9A是用以說明位移形式的圖，顯示二方向的基板 平行偏移發生時的具體例。 圖9B是用以說明位移形式的圖，顯示二方向的基板 平行偏移發生時的其他具體例。 圖10A是用以說明位移形式的圖，顯示基板斜行偏 移發生時的具體例。 圖1 〇 B是用以說明位移形式的圖，顯示基板斜行偏移 發生時的其他具體例。 圖1 1是用以說明同實施形態的壓力檢測孔的其他構 成例的剖面圖。 圖1 2是用以說明圖1 1的變形例的剖面圖。 圖1 3是用以說明圖1 2的變形例的剖面圖。 圖1 4是用以說明圖1 3的變形例的剖面圖。 圖1 5是用以說明圖1 4的變形例的剖面圖。 圖1 6是用以說明壓力檢測孔的配置位置的圖》 圖1 7是表示嵌入壓力檢測孔的流路擋塊的構成例的 立體圖。 【主要元件符號說明】-28- 201220422 ECR (Electro Cyclotron Resonance) plasma is generated as a plasma processing device for plasma generation. [Industrial Applicability] The present invention is a plasma processing apparatus, a substrate holding mechanism, and a substrate displacement detecting method which can be applied to a plasma processing of a large substrate such as a glass substrate for a flat panel display (FPD). BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an external perspective view of a processing apparatus according to an embodiment of the present invention. Fig. 2 is a cross-sectional view showing a processing chamber constituting the plasma processing apparatus of the same embodiment. Fig. 3 is a view for explaining an example of the configuration of a heat transfer gas supply mechanism of the same embodiment. 4A is a view of the surface of the mounting table shown in FIG. 3 as seen from above, showing a state in which the substrate is not placed. 4B is a view of the surface of the mounting table shown in FIG. 3 as seen from above, showing a state in which the substrate is placed. Fig. 5 is a graph showing the relationship between the He gas pressure set by the pressure sensor built in the pressure regulating valve (PCV) and the He gas pressure on the back surface of the substrate. Fig. 6 is a flow chart showing a main routine of heat transfer gas control in the same embodiment. Fig. 7 is a flowchart showing a subroutine of the substrate offset determination processing shown in Fig. 6 -29 - 201220422. Fig. 8A is a view for explaining a displacement form, showing a specific example when a parallel displacement of a substrate in one direction occurs. Fig. 8B is a view for explaining a displacement form, showing another specific example in the case where the parallel displacement of the substrate in one direction occurs. Fig. 9A is a view for explaining a displacement form, showing a specific example when a parallel displacement of a substrate in two directions occurs. Fig. 9B is a view for explaining a displacement form, showing another specific example in the case where the parallel displacement of the substrates in the two directions occurs. Fig. 10A is a view for explaining a displacement form, showing a specific example when a substrate skew shift occurs. Fig. 1 〇 B is a view for explaining the displacement form, and shows another specific example when the substrate skew shift occurs. Fig. 11 is a cross-sectional view for explaining another configuration example of the pressure detecting hole of the same embodiment. Fig. 12 is a cross-sectional view for explaining a modification of Fig. 11. Fig. 13 is a cross-sectional view for explaining a modification of Fig. 12. Fig. 14 is a cross-sectional view for explaining a modification of Fig. 13. Fig. 15 is a cross-sectional view for explaining a modification of Fig. 14. Fig. 16 is a view for explaining the arrangement position of the pressure detecting holes. Fig. 17 is a perspective view showing a configuration example of the flow path block in which the pressure detecting holes are fitted. [Main component symbol description]
-30- 201220422 100 :處理裝置 102， 104， 106 ：閘閥 1 10 :搬送室 120 :裝載鎖定室 1 3 0 :基板搬出入機構 1 40 :索引器 142 :卡匣 2 0 0 :處理室 202 :處理容器 204 :基板搬入出口 2 0 8 :排氣管 209 :排氣裝置 2 1 0 :淋浴頭 222 :緩衝室 224 :吐出孔 226 :氣體導入口 228 :氣體導入管 2 3 0 :開閉閥 232 :質量流控制器（MFC ) 234 :處理氣體供給源 3 00 :載置台 3 02 :基底構件 3 1 0 :基座 3 1 1 :絕緣被膜 -31 201220422 312 :整合器 3 1 4 :高頻電源 3 1 5 :直流電源 3 1 6 :開關 3 20 :靜電保持部 3 2 2 :電極板 3 3 0 :外框部 3 4 0 :冷媒流路 3 5 2 :氣體流路 3 54 :氣體孔 3 62 :壓力調整閥（PCV ) 3 63 :壓力感測器 364:流量計（Flow Meters) 3 66 : He氣體供給源 3 70 :壓力檢測孔 3 70a~3 70d :壓力檢測孔 3 72 :連通路 3 74 :其他的壓力檢測孔 3 76 :流路擋塊 3 7 8 :多數的孔 3 8 0a~3 8 0d :壓力感測器 3 8 2 :壓力感測器 4 0 0 :控制部 G :基板 -32 201220422-30- 201220422 100 : Processing device 102, 104, 106 : Gate valve 1 10 : Transfer chamber 120 : Load lock chamber 1 3 0 : Substrate carry-in mechanism 1 40 : Indexer 142 : Cartridge 2 0 0 : Process chamber 202 : Processing container 204: substrate loading/outlet 2 0 8 : exhaust pipe 209 : exhaust device 2 1 0 : shower head 222 : buffer chamber 224 : discharge hole 226 : gas introduction port 228 : gas introduction pipe 2 3 0 : opening and closing valve 232 : mass flow controller (MFC) 234 : process gas supply source 3 00 : mounting table 3 02 : base member 3 1 0 : base 3 1 1 : insulating film - 31 201220422 312 : integrator 3 1 4 : high frequency power supply 3 1 5 : DC power supply 3 1 6 : Switch 3 20 : Electrostatic holding portion 3 2 2 : Electrode plate 3 3 0 : Outer frame portion 3 4 0 : Refrigerant flow path 3 5 2 : Gas flow path 3 54 : Gas hole 3 62: Pressure regulating valve (PCV) 3 63: Pressure sensor 364: Flow Meters 3 66 : He gas supply source 3 70: Pressure detecting hole 3 70a to 3 70d: Pressure detecting hole 3 72 : Connecting path 3 74 : Other pressure detecting holes 3 76 : Flow path block 3 7 8 : Most holes 3 8 0a~3 8 0d : Pressure sensor 3 8 2 : Pressure sensor 4 0 0 : Control part G: base -32 201 220 422
Ls :基板保持面 R :氣體孔形成領域Ls : substrate holding surface R : gas hole forming area
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| JP6010433B2 (en) * | 2012-11-15 | 2016-10-19 | 東京エレクトロン株式会社 | Substrate mounting table and substrate processing apparatus |
| CN103292934B (en) * | 2013-05-15 | 2015-04-08 | 北京京东方光电科技有限公司 | Carried object detecting system |
| CN104538334B (en) * | 2014-12-17 | 2017-08-08 | 中国地质大学（北京） | A kind of multi-functional plasma chamber processing system |
| US10879046B2 (en) * | 2015-09-11 | 2020-12-29 | Applied Materials, Inc. | Substrate support with real time force and film stress control |
| CN106876237B (en) * | 2015-12-10 | 2018-11-20 | 中微半导体设备(上海)有限公司 | A kind of plasma processing apparatus and method equipped with feedback de-clamping system |
| CN106298453A (en) * | 2016-08-31 | 2017-01-04 | 上海华力微电子有限公司 | A kind of method maintaining wafer back pressure stable |
| US11114327B2 (en) | 2017-08-29 | 2021-09-07 | Applied Materials, Inc. | ESC substrate support with chucking force control |
| KR102410974B1 (en) | 2017-10-13 | 2022-06-20 | 삼성전자주식회사 | Driving method of semiconductor manufacturing apparatus |
| WO2019123584A1 (en) * | 2017-12-20 | 2019-06-27 | 株式会社Ｆｕｊｉ | Plasma exposure device |
| JP7202814B2 (en) * | 2018-08-31 | 2023-01-12 | キヤノントッキ株式会社 | Film forming apparatus, film forming method, and electronic device manufacturing method |
| CN109483429B (en) * | 2018-10-18 | 2020-10-16 | 武汉华星光电半导体显示技术有限公司 | Bearing device and bearing method |
| JP7249814B2 (en) * | 2019-03-04 | 2023-03-31 | 株式会社Ｓｃｒｅｅｎホールディングス | Heat treatment apparatus and heat treatment method |
| CN112501581B (en) * | 2020-11-12 | 2022-02-22 | 北京北方华创微电子装备有限公司 | Shielding disc bearing device in semiconductor processing equipment and semiconductor processing equipment |
| CN112614797B (en) * | 2021-03-08 | 2021-07-02 | 杭州众硅电子科技有限公司 | Wafer position detection device |
| WO2022237975A1 (en) * | 2021-05-12 | 2022-11-17 | Applied Materials, Inc. | Method of substrate checking, and substrate processing system |
| CN114070197B (en) * | 2021-11-26 | 2024-04-16 | 阿特斯阳光电力集团股份有限公司 | Testing method of photovoltaic module |
| CN114345742A (en) * | 2021-12-31 | 2022-04-15 | 苏州汇川控制技术有限公司 | Method, apparatus, device and medium for detecting chip mounting position |
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| JPH07231032A (en) * | 1994-02-15 | 1995-08-29 | Oki Electric Ind Co Ltd | Sample holder |
| JPH08139170A (en) * | 1994-11-02 | 1996-05-31 | Sony Corp | Substrate stage |
| KR19980067497U (en) * | 1997-05-27 | 1998-12-05 | 문정환 | Wafer position sensing device |
| JP4522139B2 (en) * | 2003-09-19 | 2010-08-11 | 大日本スクリーン製造株式会社 | Substrate processing unit, substrate placement state detection method, and substrate processing apparatus |
| JP4753888B2 (en) * | 2007-01-15 | 2011-08-24 | 東京エレクトロン株式会社 | Substrate holding mechanism and plasma processing apparatus |
| JP4450106B1 (en) * | 2008-03-11 | 2010-04-14 | 東京エレクトロン株式会社 | Mounting table structure and processing device |
| JP5271586B2 (en) * | 2008-04-09 | 2013-08-21 | 東京エレクトロン株式会社 | Plasma processing vessel and plasma processing apparatus |
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