JP5869784B2 - 金属酸化物高誘電体エピタキシャル膜の製造方法、および基板処理装置 - Google Patents

金属酸化物高誘電体エピタキシャル膜の製造方法、および基板処理装置 Download PDF

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JP5869784B2
JP5869784B2 JP2011145820A JP2011145820A JP5869784B2 JP 5869784 B2 JP5869784 B2 JP 5869784B2 JP 2011145820 A JP2011145820 A JP 2011145820A JP 2011145820 A JP2011145820 A JP 2011145820A JP 5869784 B2 JP5869784 B2 JP 5869784B2
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film
metal
high dielectric
substrate
metal oxide
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JP2013012675A5 (enExample
JP2013012675A (ja
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佳明 醍醐
佳明 醍醐
尚武 北野
尚武 北野
隆史 中川
隆史 中川
徹 辰巳
徹 辰巳
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Canon Anelva Corp
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Canon Anelva Corp
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  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2011145820A 2011-06-30 2011-06-30 金属酸化物高誘電体エピタキシャル膜の製造方法、および基板処理装置 Active JP5869784B2 (ja)

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JP2011145820A JP5869784B2 (ja) 2011-06-30 2011-06-30 金属酸化物高誘電体エピタキシャル膜の製造方法、および基板処理装置

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JP2011145820A JP5869784B2 (ja) 2011-06-30 2011-06-30 金属酸化物高誘電体エピタキシャル膜の製造方法、および基板処理装置

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JP2013012675A5 JP2013012675A5 (enExample) 2014-06-26
JP5869784B2 true JP5869784B2 (ja) 2016-02-24

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FI130118B (fi) * 2020-03-30 2023-03-06 Turun Yliopisto Menetelmä, puolijohderakenne ja tyhjiökäsittelyjärjestelmä

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JPS6224629A (ja) * 1985-07-25 1987-02-02 Agency Of Ind Science & Technol 半導体表面保護膜形成方法
JP4801248B2 (ja) * 2000-10-31 2011-10-26 アプライド マテリアルズ インコーポレイテッド 酸化膜形成方法及び装置
JP4025542B2 (ja) * 2001-12-11 2007-12-19 松下電器産業株式会社 絶縁膜形成方法、半導体装置及びその製造方法
JP3746478B2 (ja) * 2001-12-18 2006-02-15 松下電器産業株式会社 半導体装置の製造方法
JP2004247709A (ja) * 2003-01-22 2004-09-02 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JPWO2006090645A1 (ja) * 2005-02-24 2008-07-24 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
JP2006203228A (ja) * 2006-02-23 2006-08-03 Renesas Technology Corp 半導体集積回路装置の製造方法
JP4552973B2 (ja) * 2007-06-08 2010-09-29 セイコーエプソン株式会社 半導体装置の製造方法
US8653533B2 (en) * 2009-09-07 2014-02-18 Rohm Co., Ltd. Semiconductor device and method of manufacturing the same
JP5201166B2 (ja) * 2010-04-13 2013-06-05 日本電気株式会社 二次電池

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