JP5015134B2 - 基板から酸化物を除去する方法 - Google Patents
基板から酸化物を除去する方法 Download PDFInfo
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- JP5015134B2 JP5015134B2 JP2008504164A JP2008504164A JP5015134B2 JP 5015134 B2 JP5015134 B2 JP 5015134B2 JP 2008504164 A JP2008504164 A JP 2008504164A JP 2008504164 A JP2008504164 A JP 2008504164A JP 5015134 B2 JP5015134 B2 JP 5015134B2
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- 239000000758 substrate Substances 0.000 title claims description 213
- 238000000034 method Methods 0.000 title claims description 64
- 229910052710 silicon Inorganic materials 0.000 claims description 119
- 239000010703 silicon Substances 0.000 claims description 116
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 115
- 238000012545 processing Methods 0.000 claims description 100
- 239000007789 gas Substances 0.000 claims description 88
- 230000008569 process Effects 0.000 claims description 36
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 32
- 239000001257 hydrogen Substances 0.000 claims description 32
- 229910052739 hydrogen Inorganic materials 0.000 claims description 32
- 238000000151 deposition Methods 0.000 claims description 24
- 230000008021 deposition Effects 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- -1 epitaxially grown Si Inorganic materials 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 229910003811 SiGeC Inorganic materials 0.000 claims 1
- 229910004541 SiN Inorganic materials 0.000 claims 1
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 238000000059 patterning Methods 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 101100521334 Mus musculus Prom1 gene Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- NQZFAUXPNWSLBI-UHFFFAOYSA-N carbon monoxide;ruthenium Chemical group [Ru].[Ru].[Ru].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] NQZFAUXPNWSLBI-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Description
Claims (23)
- 基板の処理方法であって:
上に酸化膜が形成されている前記基板を処理チャンバ内に供する工程;
前記処理チャンバと結合するリモートプラズマ源内で水素含有ガスを励起する工程;
500℃よりも低温である第1基板温度の前記基板を前記の励起した水素含有ガス流に曝露することで前記基板から前記酸化膜を除去する工程;
前記基板を前記第1基板温度とは異なる第2基板温度に維持する工程;及び
前記基板が前記第2基板温度のまま、Si2Cl6を含むシリコン含有ガスに前記基板上を曝露することによって、前記基板上にシリコン含有膜を成膜する工程;
を有する方法。 - 前記水素含有ガスがH2ガスを有する、請求項1に記載の方法。
- 前記水素含有ガスが不活性ガスをさらに有する、請求項1に記載の方法。
- 前記不活性ガスが、Ar、He、Ne、Kr若しくはXe又はこれら2以上の混合ガスを有する、請求項3に記載の方法。
- 前記水素含有ガスの流速が、約0.010slmから約20slmである、請求項1に記載の方法。
- 前記シリコン含有ガスが、SiH4、SiCl4、Si2H6、若しくはSiH2Cl2又はこれら2以上の混合ガスを有する、請求項1に記載の方法。
- 前記シリコン含有ガスは、GeH4、GeCl4、又はこれらの混合ガスを含むゲルマニウム含有ガスをさらに有する、請求項7に記載の方法。
- 前記の曝露工程及び前記の成膜工程が、約100Torr未満の処理チャンバ圧力で実行される、請求項1に記載の方法。
- 前記の曝露工程及び前記の成膜工程が、約10Torr未満の処理チャンバ圧力で実行される、請求項1に記載の方法。
- 前記の基板を供する工程が、前記基板をバッチ処理チャンバ内に供する工程を有する、請求項1に記載の方法。
- 前記基板がシリコン含有膜材料を有する、請求項1に記載の方法。
- 前記シリコン含有膜材料が、Si、SiGe、SiGeC、SiC、SiN、SiCN、又はSiCOを有する、請求項11に記載の方法。
- 前記シリコン含有膜が、多結晶Si、アモルファスSi、エピタキシャル成長Si又はSiGeを有する、請求項1に記載の方法。
- 前記第1基板温度が約200℃から約300℃である、請求項1に記載の方法。
- 前記第2基板温度が約500℃から約900℃である、請求項1に記載の方法。
- 前記第2基板温度が約550℃から約750℃である、請求項1に記載の方法。
- 前記基板が、1以上のビア若しくは溝又はこれらの結合を有するパターニング基板を有する、請求項1に記載の方法。
- 前記シリコン含有膜が、前記基板の曝露されたシリコン含有表面上に選択的に形成される、請求項1に記載の方法。
- 前記シリコン含有膜が、前記基板上に非選択的に形成される、請求項1に記載の方法。
- 前記励起工程が、前記基板の直接視野内に存在しないリモートプラズマ源内で水素含有ガスを励起する工程を有する、請求項1に記載の方法。
- 前記基板を曝露する工程と前記シリコン含有膜を成膜する工程との間の期間、前記基板を大気に曝露しない工程をさらに有する、請求項1に記載の方法。
- 基板上にシリコン含有膜を成膜する方法であって:
バッチ処理チャンバ内に複数のシリコン含有基板を供する工程であって、該シリコン含有基板の各々は酸化物含有マスク又は窒化物含有マスクのうちの少なくとも1つを上に有し、それにより前記シリコン含有基板の曝露表面は前記マスクを介して曝露され、前記曝露表面は酸化膜を上に有する、工程;
前記バッチ処理チャンバと結合するリモートプラズマ源内で水素含有ガスを励起する工程;
前記複数のシリコン含有基板を、前記の励起された水素含有ガス流に、約500℃よりも低温の第1基板温度で曝露して、前記複数のシリコン含有基板の各々から前記酸化膜を除去する、工程;
前記複数のシリコン含有基板の温度を、少なくとも500℃である第2基板温度へ昇温する工程;及び
前記複数のシリコン含有基板を、Si2Cl6を含む処理ガスへ曝露することによって、前記複数のシリコン含有基板の各々の曝露表面上にシリコン含有膜を選択的に成膜する工程;
を有する方法。 - 基板上にシリコン含有膜を成膜する方法であって:
バッチ処理チャンバ内に複数のシリコン含有基板を供する工程であって、該シリコン含有基板の各々は酸化物含有マスク又は窒化物含有マスクのうちの少なくとも1つを上に有し、それにより前記シリコン含有基板の曝露表面は前記マスクを介して曝露され、前記曝露表面は酸化膜を上に有する、工程;
前記バッチ処理チャンバと結合するリモートプラズマ源内で水素含有ガスを励起する工程;
前記複数のシリコン含有基板を、前記の励起された水素含有ガス流に、約500℃よりも低温の第1基板温度で曝露して、前記複数のシリコン含有基板の各々から前記酸化膜を除去する、工程;
前記複数のシリコン含有基板の温度を、少なくとも500℃である第2基板温度へ昇温する工程;及び
前記複数のシリコン含有基板を、Si2Cl6を含む処理ガスへ曝露することによって、前記複数のシリコン含有基板の各々の曝露表面上にシリコン含有膜を非選択的に成膜する工程;
を有する方法。
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US11/094,462 | 2005-03-31 | ||
US11/094,462 US7524769B2 (en) | 2005-03-31 | 2005-03-31 | Method and system for removing an oxide from a substrate |
PCT/US2006/010536 WO2006104819A2 (en) | 2005-03-31 | 2006-03-23 | A method and system for removing an oxide from a substrate |
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US20080153266A1 (en) * | 2006-12-21 | 2008-06-26 | Interuniversitair Microeletronica Centrum (Imec) Vzw | Method to improve the selective epitaxial growth (seg) process |
US20080242062A1 (en) * | 2007-03-31 | 2008-10-02 | Lucent Technologies Inc. | Fabrication of diverse structures on a common substrate through the use of non-selective area growth techniques |
CN102326229B (zh) * | 2009-03-05 | 2014-03-12 | 应用材料公司 | 沉积具有低界面污染的层的方法 |
US8852674B2 (en) * | 2010-11-12 | 2014-10-07 | Applied Materials, Inc. | Method for segregating the alloying elements and reducing the residue resistivity of copper alloy layers |
US20120312326A1 (en) * | 2011-06-10 | 2012-12-13 | Applied Materials, Inc. | Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber |
US20140011339A1 (en) * | 2012-07-06 | 2014-01-09 | Applied Materials, Inc. | Method for removing native oxide and residue from a germanium or iii-v group containing surface |
KR102245729B1 (ko) * | 2013-08-09 | 2021-04-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 에피택셜 성장 이전에 기판 표면을 사전 세정하기 위한 방법 및 장치 |
SG11201602316PA (en) | 2013-09-25 | 2016-05-30 | Ev Group E Thallner Gmbh | Apparatus and method for bonding substrates |
US9735009B2 (en) * | 2014-09-15 | 2017-08-15 | Applied Materials, Inc. | Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channel |
US9653291B2 (en) | 2014-11-13 | 2017-05-16 | Applied Materials, Inc. | Method for removing native oxide and residue from a III-V group containing surface |
US20170018427A1 (en) * | 2015-07-15 | 2017-01-19 | Applied Materials, Inc. | Method of selective epitaxy |
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