JP2008538161A - 基板から酸化物を除去する方法及びシステム - Google Patents
基板から酸化物を除去する方法及びシステム Download PDFInfo
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- JP2008538161A JP2008538161A JP2008504164A JP2008504164A JP2008538161A JP 2008538161 A JP2008538161 A JP 2008538161A JP 2008504164 A JP2008504164 A JP 2008504164A JP 2008504164 A JP2008504164 A JP 2008504164A JP 2008538161 A JP2008538161 A JP 2008538161A
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- 239000000758 substrate Substances 0.000 title claims abstract description 209
- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000012545 processing Methods 0.000 claims abstract description 105
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 100
- 239000010703 silicon Substances 0.000 claims abstract description 99
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 98
- 239000007789 gas Substances 0.000 claims abstract description 94
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000001257 hydrogen Substances 0.000 claims abstract description 31
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 31
- 230000008021 deposition Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- -1 epitaxially grown Si Inorganic materials 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 229910003811 SiGeC Inorganic materials 0.000 claims 1
- 229910004541 SiN Inorganic materials 0.000 claims 1
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 230000008569 process Effects 0.000 description 34
- 238000000059 patterning Methods 0.000 description 22
- 238000000151 deposition Methods 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 101100521334 Mus musculus Prom1 gene Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- NQZFAUXPNWSLBI-UHFFFAOYSA-N carbon monoxide;ruthenium Chemical group [Ru].[Ru].[Ru].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] NQZFAUXPNWSLBI-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract
Description
Claims (27)
- 基板の処理方法であって:
上に酸化膜が形成されている前記基板を処理チャンバ内に供する工程;
前記処理チャンバと結合するリモートプラズマ源内で水素含有ガスを励起する工程;
約900℃よりも低温である第1基板温度の前記基板を前記の励起した水素含有ガス流に曝露することで前記基板から前記酸化膜を除去する工程;
前記基板を前記第1基板温度とは異なる第2基板温度に維持する工程;及び
前記第2基板温度の前記基板上にシリコン含有膜を成膜する工程;
を有する方法。 - 前記水素含有ガスがH2ガスを有する、請求項1に記載の方法。
- 前記水素含有ガスが不活性ガスをさらに有する、請求項1に記載の方法。
- 前記不活性ガスが、Ar、He、Ne、Kr若しくはXe又はこれら2以上の混合ガスを有する、請求項3に記載の方法。
- 前記水素含有ガスの流速が、約0.010slmから約20slmである、請求項1に記載の方法。
- 前記の成膜工程が、前記基板をシリコン含有ガスに曝露する工程を有する、請求項1に記載の方法。
- 前記シリコン含有ガスが、SiH4、SiCl4、Si2H6、SiH2Cl2若しくはSi2Cl6又はこれら2以上の混合ガスを有する、請求項6に記載の方法。
- 前記の成膜工程が、前記基板をシリコン含有ガス及びゲルマニウム含有ガスに曝露する工程を有し、
前記シリコン含有ガスは、SiH4、SiCl4、Si2H6、SiH2Cl2若しくはSi2Cl6又はこれら2以上の混合ガスを有し、
前記ゲルマニウム含有ガスは、GeH4、GeCl4、又はこれらの混合ガスを有する、
請求項1に記載の方法。 - 前記の曝露工程及び前記の成膜工程が、約100Torr未満の処理チャンバ圧力で実行される、請求項1に記載の方法。
- 前記の曝露工程及び前記の成膜工程が、約10Torr未満の処理チャンバ圧力で実行される、請求項1に記載の方法。
- 前記の基板を供する工程が、前記基板をバッチ処理チャンバ内に供する工程を有する、請求項1に記載の方法。
- 前記基板がシリコン含有膜材料を有する、請求項1に記載の方法。
- 前記シリコン含有膜材料が、Si、SiGe、SiGeC、SiC、SiN、SiCN、又はSiCOを有する、請求項12に記載の方法。
- 前記シリコン含有膜が、多結晶Si、アモルファスSi、エピタキシャル成長Si又はSiGeを有する、請求項1に記載の方法。
- 前記第1基板温度が前記第2基板温度よりも低温である、請求項1に記載の方法。
- 前記第1基板温度が約500℃よりも低温である、請求項1に記載の方法。
- 前記第1基板温度が約200℃から約300℃である、請求項1に記載の方法。
- 前記第2基板温度が約500℃から約900℃である、請求項1に記載の方法。
- 前記第2基板温度が約550℃から約750℃である、請求項1に記載の方法。
- 前記第1基板温度が約200℃から約300℃である、請求項19に記載の方法。
- 前記基板が、1以上のビア若しくは溝又はこれらの結合を有するパターニング基板を有する、請求項1に記載の方法。
- 前記シリコン含有膜が、前記基板の曝露されたシリコン含有表面上に選択的に形成される、請求項1に記載の方法。
- 前記シリコン含有膜が、前記基板上に非選択的に形成される、請求項1に記載の方法。
- 基板を処理するシステムであって:
上に酸化膜が形成された基板を有するように備えられた処理チャンバ;
前記処理チャンバと結合し、及び水素含有ガスを励起するように備えられたリモートプラズマ源;
前記処理チャンバへガスを流すように備えられたガス供給ライン;
前記基板を加熱するように備えられた熱源;及び
制御装置;
を有し、
前記制御装置は、前記熱源に、基板を約900℃よりも低温の第1温度に加熱させ、
前記ガス供給ラインによって、前記の励起した水素含有ガスが前記処理チャンバへ流れるように備えられ、それにより、前記第1温度に加熱された前記基板が、前記の励起した水素含有ガスに曝露され、
前記熱源に、前記基板を前記第1温度とは異なる第2温度に加熱させ、かつ、
前記処理チャンバへシリコン含有ガスを流すように備えられ、それにより、前記第2温度に加熱された前記基板が、前記シリコン含有ガスに曝露される、
システム。 - 前記処理チャンバが1から200の基板を収容するように備えられている、請求項24に記載のシステム。
- 前記リモートプラズマ源が、マイクロ波プラズマ源、RFプラズマ源、又は光照射を利用するプラズマ源を有する、請求項24に記載のシステム。
- プロセッサ上で実行されるプログラム命令を有するコンピュータによる読み取りが可能な媒体であって、前記プロセッサによって実行されるときに、基板処理装置に、請求項1に記載の方法中の工程を実行させる、コンピュータによる読み取りが可能な媒体
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JP2016528734A (ja) * | 2013-08-09 | 2016-09-15 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | エピタキシャル成長に先立って基板表面を予洗浄するための方法及び装置 |
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JP2012519962A (ja) * | 2009-03-05 | 2012-08-30 | アプライド マテリアルズ インコーポレイテッド | 界面汚染を低減した層を堆積させる方法 |
US20120312326A1 (en) * | 2011-06-10 | 2012-12-13 | Applied Materials, Inc. | Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber |
US20140011339A1 (en) * | 2012-07-06 | 2014-01-09 | Applied Materials, Inc. | Method for removing native oxide and residue from a germanium or iii-v group containing surface |
CN110098138B (zh) * | 2013-09-25 | 2023-07-18 | Ev 集团 E·索尔纳有限责任公司 | 用于结合基板的装置及方法 |
US9735009B2 (en) * | 2014-09-15 | 2017-08-15 | Applied Materials, Inc. | Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channel |
US9653291B2 (en) | 2014-11-13 | 2017-05-16 | Applied Materials, Inc. | Method for removing native oxide and residue from a III-V group containing surface |
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