JP2013012675A5 - - Google Patents
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- Publication number
- JP2013012675A5 JP2013012675A5 JP2011145820A JP2011145820A JP2013012675A5 JP 2013012675 A5 JP2013012675 A5 JP 2013012675A5 JP 2011145820 A JP2011145820 A JP 2011145820A JP 2011145820 A JP2011145820 A JP 2011145820A JP 2013012675 A5 JP2013012675 A5 JP 2013012675A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- metal
- high dielectric
- substrate
- metal oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052751 metal Inorganic materials 0.000 claims description 55
- 239000002184 metal Substances 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 46
- 238000010438 heat treatment Methods 0.000 claims description 41
- 229910044991 metal oxide Inorganic materials 0.000 claims description 41
- 150000004706 metal oxides Chemical class 0.000 claims description 41
- 239000013078 crystal Substances 0.000 claims description 34
- 238000004519 manufacturing process Methods 0.000 claims description 14
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 12
- 229910001882 dioxygen Inorganic materials 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 4
- 229910052735 hafnium Inorganic materials 0.000 claims 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 4
- 229910052726 zirconium Inorganic materials 0.000 claims 4
- 238000004544 sputter deposition Methods 0.000 claims 3
- 229910002601 GaN Inorganic materials 0.000 claims 2
- 238000004590 computer program Methods 0.000 claims 2
- 239000012528 membrane Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011145820A JP5869784B2 (ja) | 2011-06-30 | 2011-06-30 | 金属酸化物高誘電体エピタキシャル膜の製造方法、および基板処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011145820A JP5869784B2 (ja) | 2011-06-30 | 2011-06-30 | 金属酸化物高誘電体エピタキシャル膜の製造方法、および基板処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013012675A JP2013012675A (ja) | 2013-01-17 |
| JP2013012675A5 true JP2013012675A5 (enExample) | 2014-06-26 |
| JP5869784B2 JP5869784B2 (ja) | 2016-02-24 |
Family
ID=47686293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011145820A Active JP5869784B2 (ja) | 2011-06-30 | 2011-06-30 | 金属酸化物高誘電体エピタキシャル膜の製造方法、および基板処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5869784B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI130118B (fi) * | 2020-03-30 | 2023-03-06 | Turun Yliopisto | Menetelmä, puolijohderakenne ja tyhjiökäsittelyjärjestelmä |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6224629A (ja) * | 1985-07-25 | 1987-02-02 | Agency Of Ind Science & Technol | 半導体表面保護膜形成方法 |
| JP4801248B2 (ja) * | 2000-10-31 | 2011-10-26 | アプライド マテリアルズ インコーポレイテッド | 酸化膜形成方法及び装置 |
| JP4025542B2 (ja) * | 2001-12-11 | 2007-12-19 | 松下電器産業株式会社 | 絶縁膜形成方法、半導体装置及びその製造方法 |
| JP3746478B2 (ja) * | 2001-12-18 | 2006-02-15 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JP2004247709A (ja) * | 2003-01-22 | 2004-09-02 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JPWO2006090645A1 (ja) * | 2005-02-24 | 2008-07-24 | 株式会社日立国際電気 | 半導体装置の製造方法および基板処理装置 |
| JP2006203228A (ja) * | 2006-02-23 | 2006-08-03 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| JP4552973B2 (ja) * | 2007-06-08 | 2010-09-29 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| CN102484069A (zh) * | 2009-09-07 | 2012-05-30 | 罗姆股份有限公司 | 半导体装置及其制造方法 |
| JP5201166B2 (ja) * | 2010-04-13 | 2013-06-05 | 日本電気株式会社 | 二次電池 |
-
2011
- 2011-06-30 JP JP2011145820A patent/JP5869784B2/ja active Active
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