JP5868424B2 - 基板に開口を形成する装置及び方法 - Google Patents

基板に開口を形成する装置及び方法 Download PDF

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Publication number
JP5868424B2
JP5868424B2 JP2013548538A JP2013548538A JP5868424B2 JP 5868424 B2 JP5868424 B2 JP 5868424B2 JP 2013548538 A JP2013548538 A JP 2013548538A JP 2013548538 A JP2013548538 A JP 2013548538A JP 5868424 B2 JP5868424 B2 JP 5868424B2
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Prior art keywords
substrate
opening
etchant
etch
etch process
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Expired - Fee Related
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JP2013548538A
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Japanese (ja)
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JP2014502061A (ja
JP2014502061A5 (https=
Inventor
フーパー，アンディ，イー
Original Assignee
エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド
エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド
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Publication of JP2014502061A5 publication Critical patent/JP2014502061A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/384—Removing material by boring or cutting by boring of specially shaped holes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/34—Coated articles ; Surface treated articles
    • B23K2101/35—Surface treated articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Weting (AREA)
JP2013548538A 2011-01-05 2012-01-05 基板に開口を形成する装置及び方法 Expired - Fee Related JP5868424B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161430045P 2011-01-05 2011-01-05
US61/430,045 2011-01-05
US13/343,640 2012-01-04
US13/343,640 US20120168412A1 (en) 2011-01-05 2012-01-04 Apparatus and method for forming an aperture in a substrate
PCT/US2012/020324 WO2012094490A2 (en) 2011-01-05 2012-01-05 Apparatus and method for forming an aperture in a substrate

Publications (3)

Publication Number Publication Date
JP2014502061A JP2014502061A (ja) 2014-01-23
JP2014502061A5 JP2014502061A5 (https=) 2015-02-12
JP5868424B2 true JP5868424B2 (ja) 2016-02-24

Family

ID=46379827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013548538A Expired - Fee Related JP5868424B2 (ja) 2011-01-05 2012-01-05 基板に開口を形成する装置及び方法

Country Status (6)

Country Link
US (1) US20120168412A1 (https=)
JP (1) JP5868424B2 (https=)
KR (1) KR20130132882A (https=)
CN (1) CN103348450B (https=)
TW (1) TWI541888B (https=)
WO (1) WO2012094490A2 (https=)

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US8716128B2 (en) * 2011-04-14 2014-05-06 Tsmc Solid State Lighting Ltd. Methods of forming through silicon via openings
US9828277B2 (en) 2012-02-28 2017-11-28 Electro Scientific Industries, Inc. Methods for separation of strengthened glass
US10357850B2 (en) 2012-09-24 2019-07-23 Electro Scientific Industries, Inc. Method and apparatus for machining a workpiece
US9828278B2 (en) 2012-02-28 2017-11-28 Electro Scientific Industries, Inc. Method and apparatus for separation of strengthened glass and articles produced thereby
JP2015516352A (ja) * 2012-02-29 2015-06-11 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 強化ガラスを加工するための方法及び装置並びにこれにより生成された製品
DE102013005139A1 (de) * 2013-03-26 2014-10-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Abtragen von sprödhartem Material mittels Laserstrahlung
US20150059411A1 (en) * 2013-08-29 2015-03-05 Corning Incorporated Method of separating a glass sheet from a carrier
US9776906B2 (en) 2014-03-28 2017-10-03 Electro Scientific Industries, Inc. Laser machining strengthened glass
EP3331978B1 (en) 2015-08-03 2024-10-09 Fujifilm Electronic Materials USA, Inc. Cleaning composition
JP2018532148A (ja) * 2015-08-26 2018-11-01 ナショナル ユニバーシティ オブ シンガポール 微小球を保持する膜
CN106166648A (zh) * 2015-09-01 2016-11-30 深圳光韵达光电科技股份有限公司 一种激光钻孔加工方法
US10442720B2 (en) * 2015-10-01 2019-10-15 AGC Inc. Method of forming hole in glass substrate by using pulsed laser, and method of producing glass substrate provided with hole
US10549386B2 (en) * 2016-02-29 2020-02-04 Xerox Corporation Method for ablating openings in unsupported layers
US10292275B2 (en) 2016-04-06 2019-05-14 AGC Inc. Method of manufacturing glass substrate that has through hole, method of forming through hole in glass substrate and system for manufacturing glass substrate that has through hole
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
US10134657B2 (en) 2016-06-29 2018-11-20 Corning Incorporated Inorganic wafer having through-holes attached to semiconductor wafer
CN106684061B (zh) * 2016-12-14 2019-01-25 中国电子科技集团公司第五十五研究所 一种磷化铟背孔的制作方法
CN110099871B (zh) * 2016-12-22 2022-04-05 奇跃公司 用于使用激光烧蚀制造成形光纤元件的方法和系统
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US11078112B2 (en) * 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
GB201710324D0 (en) 2017-06-28 2017-08-09 Lig Tech Ltd Microsphere lens assembly
US12180108B2 (en) 2017-12-19 2024-12-31 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
US11152294B2 (en) 2018-04-09 2021-10-19 Corning Incorporated Hermetic metallized via with improved reliability
US10470300B1 (en) * 2018-07-24 2019-11-05 AGC Inc. Glass panel for wiring board and method of manufacturing wiring board
WO2020061437A1 (en) 2018-09-20 2020-03-26 Industrial Technology Research Institute Copper metallization for through-glass vias on thin glass
WO2020171940A1 (en) 2019-02-21 2020-08-27 Corning Incorporated Glass or glass ceramic articles with copper-metallized through holes and processes for making the same
US20210310122A1 (en) * 2020-04-03 2021-10-07 Applied Materials, Inc. Method of forming holes from both sides of substrate
KR102829971B1 (ko) * 2020-07-02 2025-07-08 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
CN114256141A (zh) * 2020-09-24 2022-03-29 中国科学院微电子研究所 一种孔处理方法和半导体器件
US12030135B2 (en) 2020-10-14 2024-07-09 Applied Materials, Inc. Methods to fabricate chamber component holes using laser drilling
US11819948B2 (en) 2020-10-14 2023-11-21 Applied Materials, Inc. Methods to fabricate chamber component holes using laser drilling

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AU2002303842A1 (en) * 2001-05-22 2002-12-03 Reflectivity, Inc. A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
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Also Published As

Publication number Publication date
JP2014502061A (ja) 2014-01-23
CN103348450A (zh) 2013-10-09
TWI541888B (zh) 2016-07-11
US20120168412A1 (en) 2012-07-05
WO2012094490A2 (en) 2012-07-12
KR20130132882A (ko) 2013-12-05
CN103348450B (zh) 2016-08-10
TW201230185A (en) 2012-07-16
WO2012094490A3 (en) 2012-09-27

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