KR20130132882A - 기판 내 개구 형성 장치 및 방법 - Google Patents

기판 내 개구 형성 장치 및 방법 Download PDF

Info

Publication number
KR20130132882A
KR20130132882A KR1020137016689A KR20137016689A KR20130132882A KR 20130132882 A KR20130132882 A KR 20130132882A KR 1020137016689 A KR1020137016689 A KR 1020137016689A KR 20137016689 A KR20137016689 A KR 20137016689A KR 20130132882 A KR20130132882 A KR 20130132882A
Authority
KR
South Korea
Prior art keywords
substrate
laser
forming
etchant
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020137016689A
Other languages
English (en)
Korean (ko)
Inventor
앤디 이. 후퍼
Original Assignee
일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 filed Critical 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드
Publication of KR20130132882A publication Critical patent/KR20130132882A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/384—Removing material by boring or cutting by boring of specially shaped holes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/34—Coated articles ; Surface treated articles
    • B23K2101/35—Surface treated articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Weting (AREA)
KR1020137016689A 2011-01-05 2012-01-05 기판 내 개구 형성 장치 및 방법 Ceased KR20130132882A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161430045P 2011-01-05 2011-01-05
US61/430,045 2011-01-05
US13/343,640 2012-01-04
US13/343,640 US20120168412A1 (en) 2011-01-05 2012-01-04 Apparatus and method for forming an aperture in a substrate
PCT/US2012/020324 WO2012094490A2 (en) 2011-01-05 2012-01-05 Apparatus and method for forming an aperture in a substrate

Publications (1)

Publication Number Publication Date
KR20130132882A true KR20130132882A (ko) 2013-12-05

Family

ID=46379827

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137016689A Ceased KR20130132882A (ko) 2011-01-05 2012-01-05 기판 내 개구 형성 장치 및 방법

Country Status (6)

Country Link
US (1) US20120168412A1 (https=)
JP (1) JP5868424B2 (https=)
KR (1) KR20130132882A (https=)
CN (1) CN103348450B (https=)
TW (1) TWI541888B (https=)
WO (1) WO2012094490A2 (https=)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8716128B2 (en) * 2011-04-14 2014-05-06 Tsmc Solid State Lighting Ltd. Methods of forming through silicon via openings
US9828277B2 (en) 2012-02-28 2017-11-28 Electro Scientific Industries, Inc. Methods for separation of strengthened glass
US10357850B2 (en) 2012-09-24 2019-07-23 Electro Scientific Industries, Inc. Method and apparatus for machining a workpiece
US9828278B2 (en) 2012-02-28 2017-11-28 Electro Scientific Industries, Inc. Method and apparatus for separation of strengthened glass and articles produced thereby
JP2015516352A (ja) * 2012-02-29 2015-06-11 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 強化ガラスを加工するための方法及び装置並びにこれにより生成された製品
DE102013005139A1 (de) * 2013-03-26 2014-10-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Abtragen von sprödhartem Material mittels Laserstrahlung
US20150059411A1 (en) * 2013-08-29 2015-03-05 Corning Incorporated Method of separating a glass sheet from a carrier
US9776906B2 (en) 2014-03-28 2017-10-03 Electro Scientific Industries, Inc. Laser machining strengthened glass
EP3331978B1 (en) 2015-08-03 2024-10-09 Fujifilm Electronic Materials USA, Inc. Cleaning composition
JP2018532148A (ja) * 2015-08-26 2018-11-01 ナショナル ユニバーシティ オブ シンガポール 微小球を保持する膜
CN106166648A (zh) * 2015-09-01 2016-11-30 深圳光韵达光电科技股份有限公司 一种激光钻孔加工方法
US10442720B2 (en) * 2015-10-01 2019-10-15 AGC Inc. Method of forming hole in glass substrate by using pulsed laser, and method of producing glass substrate provided with hole
US10549386B2 (en) * 2016-02-29 2020-02-04 Xerox Corporation Method for ablating openings in unsupported layers
US10292275B2 (en) 2016-04-06 2019-05-14 AGC Inc. Method of manufacturing glass substrate that has through hole, method of forming through hole in glass substrate and system for manufacturing glass substrate that has through hole
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
US10134657B2 (en) 2016-06-29 2018-11-20 Corning Incorporated Inorganic wafer having through-holes attached to semiconductor wafer
CN106684061B (zh) * 2016-12-14 2019-01-25 中国电子科技集团公司第五十五研究所 一种磷化铟背孔的制作方法
CN110099871B (zh) * 2016-12-22 2022-04-05 奇跃公司 用于使用激光烧蚀制造成形光纤元件的方法和系统
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US11078112B2 (en) * 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
GB201710324D0 (en) 2017-06-28 2017-08-09 Lig Tech Ltd Microsphere lens assembly
US12180108B2 (en) 2017-12-19 2024-12-31 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
US11152294B2 (en) 2018-04-09 2021-10-19 Corning Incorporated Hermetic metallized via with improved reliability
US10470300B1 (en) * 2018-07-24 2019-11-05 AGC Inc. Glass panel for wiring board and method of manufacturing wiring board
WO2020061437A1 (en) 2018-09-20 2020-03-26 Industrial Technology Research Institute Copper metallization for through-glass vias on thin glass
WO2020171940A1 (en) 2019-02-21 2020-08-27 Corning Incorporated Glass or glass ceramic articles with copper-metallized through holes and processes for making the same
US20210310122A1 (en) * 2020-04-03 2021-10-07 Applied Materials, Inc. Method of forming holes from both sides of substrate
KR102829971B1 (ko) * 2020-07-02 2025-07-08 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
CN114256141A (zh) * 2020-09-24 2022-03-29 中国科学院微电子研究所 一种孔处理方法和半导体器件
US12030135B2 (en) 2020-10-14 2024-07-09 Applied Materials, Inc. Methods to fabricate chamber component holes using laser drilling
US11819948B2 (en) 2020-10-14 2023-11-21 Applied Materials, Inc. Methods to fabricate chamber component holes using laser drilling

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03253025A (ja) * 1990-03-02 1991-11-12 Nippon Telegr & Teleph Corp <Ntt> 加工基板及びシリコン異方性エッチング方法
DE69132523D1 (de) * 1990-05-09 2001-03-08 Canon Kk Erzeugung von Mustern und Herstellungsverfahren für Halbleiteranordnungen mit diesem Muster
US6820330B1 (en) * 1996-12-13 2004-11-23 Tessera, Inc. Method for forming a multi-layer circuit assembly
JP3957010B2 (ja) * 1997-06-04 2007-08-08 日本板硝子株式会社 微細孔を有するガラス基材
US6114240A (en) * 1997-12-18 2000-09-05 Micron Technology, Inc. Method for fabricating semiconductor components using focused laser beam
JP2000246474A (ja) * 1999-02-25 2000-09-12 Seiko Epson Corp レーザ光による加工方法
WO2000050198A1 (en) * 1999-02-25 2000-08-31 Seiko Epson Corporation Method for machining work by laser beam
JP2002313914A (ja) * 2001-04-18 2002-10-25 Sony Corp 配線形成方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
AU2002303842A1 (en) * 2001-05-22 2002-12-03 Reflectivity, Inc. A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
US7598167B2 (en) * 2004-08-24 2009-10-06 Micron Technology, Inc. Method of forming vias in semiconductor substrates without damaging active regions thereof and resulting structures
US7378342B2 (en) * 2004-08-27 2008-05-27 Micron Technology, Inc. Methods for forming vias varying lateral dimensions
US7109068B2 (en) * 2004-08-31 2006-09-19 Micron Technology, Inc. Through-substrate interconnect fabrication methods
JP4840200B2 (ja) * 2007-03-09 2011-12-21 パナソニック株式会社 半導体チップの製造方法
US7989318B2 (en) * 2008-12-08 2011-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for stacking semiconductor dies
US9685186B2 (en) * 2009-02-27 2017-06-20 Applied Materials, Inc. HDD pattern implant system

Also Published As

Publication number Publication date
JP2014502061A (ja) 2014-01-23
CN103348450A (zh) 2013-10-09
TWI541888B (zh) 2016-07-11
US20120168412A1 (en) 2012-07-05
JP5868424B2 (ja) 2016-02-24
WO2012094490A2 (en) 2012-07-12
CN103348450B (zh) 2016-08-10
TW201230185A (en) 2012-07-16
WO2012094490A3 (en) 2012-09-27

Similar Documents

Publication Publication Date Title
KR20130132882A (ko) 기판 내 개구 형성 장치 및 방법
KR100829876B1 (ko) 레이저 기계가공의 제어
US8894868B2 (en) Substrate containing aperture and methods of forming the same
EP1404481B1 (en) A laser machining system and method
US9029242B2 (en) Damage isolation by shaped beam delivery in laser scribing process
US8557683B2 (en) Multi-step and asymmetrically shaped laser beam scribing
US8198566B2 (en) Laser processing of workpieces containing low-k dielectric material
TWI605508B (zh) 用於切割具有厚鈍化聚合物層之晶圓的方法以及設備
US7601616B2 (en) Wafer laser processing method
US8759197B2 (en) Multi-step and asymmetrically shaped laser beam scribing
KR102476266B1 (ko) 다중 통과 레이저 스크라이빙 프로세스 및 플라즈마 에칭 프로세스를 사용하는 하이브리드 웨이퍼 다이싱 접근법
JP2009538231A (ja) 超短レーザパルスによるウェハスクライビング
CN107845607A (zh) 通过激光与等离子体蚀刻的基板切割所用的水溶性掩模
KR20180114220A (ko) 분할 빔 레이저 스크라이빙 프로세스 및 플라즈마 식각 프로세스를 사용하는 하이브리드 웨이퍼 다이싱 접근법
TW201517152A (zh) 用於使用雷射刻劃及電漿蝕刻之晶圓切割的交替遮蔽及雷射刻劃方法
TWI813895B (zh) 使用均勻旋轉光束雷射刻劃處理及電漿蝕刻處理之混合式晶圓切割方法
IE83783B1 (en) A laser machining system and method
Amako Multi-beam parallel processing and chemical finishing of silicon for microcavities in inkjet printer heads
HK1053999B (en) Control of laser machining

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000