JP5858952B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5858952B2
JP5858952B2 JP2013105985A JP2013105985A JP5858952B2 JP 5858952 B2 JP5858952 B2 JP 5858952B2 JP 2013105985 A JP2013105985 A JP 2013105985A JP 2013105985 A JP2013105985 A JP 2013105985A JP 5858952 B2 JP5858952 B2 JP 5858952B2
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Japan
Prior art keywords
protective film
semiconductor device
forming
manufacturing
semiconductor
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Application number
JP2013105985A
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English (en)
Japanese (ja)
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JP2014229651A (ja
JP2014229651A5 (enExample
Inventor
肇 秋山
肇 秋山
岡田　章
章 岡田
欽也 山下
欽也 山下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2013105985A priority Critical patent/JP5858952B2/ja
Priority to US14/188,378 priority patent/US9117880B2/en
Priority to CN201410174444.7A priority patent/CN104183510B/zh
Publication of JP2014229651A publication Critical patent/JP2014229651A/ja
Publication of JP2014229651A5 publication Critical patent/JP2014229651A5/ja
Application granted granted Critical
Publication of JP5858952B2 publication Critical patent/JP5858952B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2013105985A 2013-05-20 2013-05-20 半導体装置の製造方法 Active JP5858952B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013105985A JP5858952B2 (ja) 2013-05-20 2013-05-20 半導体装置の製造方法
US14/188,378 US9117880B2 (en) 2013-05-20 2014-02-24 Method for manufacturing semiconductor device
CN201410174444.7A CN104183510B (zh) 2013-05-20 2014-04-28 半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013105985A JP5858952B2 (ja) 2013-05-20 2013-05-20 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2014229651A JP2014229651A (ja) 2014-12-08
JP2014229651A5 JP2014229651A5 (enExample) 2015-07-02
JP5858952B2 true JP5858952B2 (ja) 2016-02-10

Family

ID=51896099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013105985A Active JP5858952B2 (ja) 2013-05-20 2013-05-20 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US9117880B2 (enExample)
JP (1) JP5858952B2 (enExample)
CN (1) CN104183510B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106291265A (zh) * 2015-05-13 2017-01-04 无锡华润上华半导体有限公司 Dc-dc电路中开关管的耐压测试方法
CN109643667B (zh) 2016-09-01 2023-08-25 三菱电机株式会社 半导体装置的测定方法
JP7217688B2 (ja) 2019-09-26 2023-02-03 三菱電機株式会社 半導体装置、及び半導体素子の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2969086B2 (ja) 1996-09-25 1999-11-02 中日本電子株式会社 大電流用小型接触子
DE69737783T2 (de) * 1996-10-30 2008-02-28 Samsung Electronics Co., Ltd., Suwon Verfahren zur Herstellung eines Halbleiterspeicherbauteils
JP3587019B2 (ja) * 1997-04-08 2004-11-10 ソニー株式会社 半導体装置の製造方法
JP2003130889A (ja) 2001-10-29 2003-05-08 Vector Semicon Kk 半導体装置検査装置及び検査方法
JP4609983B2 (ja) * 2004-04-30 2011-01-12 ルネサスエレクトロニクス株式会社 電極パッドを備える素子
CH700392B1 (de) * 2009-02-06 2012-12-31 Gerhard Obrist Abgabevorrichtung für die dosierte Abgabe einer Flüssiggasformulierung und Verfahren zur Herstellung der Abgabevorrichtung.
JP5160498B2 (ja) * 2009-05-20 2013-03-13 ルネサスエレクトロニクス株式会社 半導体装置
JP5486866B2 (ja) * 2009-07-29 2014-05-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2012064698A (ja) * 2010-09-15 2012-03-29 Ricoh Co Ltd 半導体装置及びそのレイアウト方法

Also Published As

Publication number Publication date
CN104183510A (zh) 2014-12-03
US9117880B2 (en) 2015-08-25
CN104183510B (zh) 2017-05-10
JP2014229651A (ja) 2014-12-08
US20140342544A1 (en) 2014-11-20

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