CN104183510B - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

Info

Publication number
CN104183510B
CN104183510B CN201410174444.7A CN201410174444A CN104183510B CN 104183510 B CN104183510 B CN 104183510B CN 201410174444 A CN201410174444 A CN 201410174444A CN 104183510 B CN104183510 B CN 104183510B
Authority
CN
China
Prior art keywords
protective film
semiconductor device
forming
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410174444.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN104183510A (zh
Inventor
秋山肇
冈田章
山下钦也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN104183510A publication Critical patent/CN104183510A/zh
Application granted granted Critical
Publication of CN104183510B publication Critical patent/CN104183510B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201410174444.7A 2013-05-20 2014-04-28 半导体装置的制造方法 Active CN104183510B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-105985 2013-05-20
JP2013105985A JP5858952B2 (ja) 2013-05-20 2013-05-20 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN104183510A CN104183510A (zh) 2014-12-03
CN104183510B true CN104183510B (zh) 2017-05-10

Family

ID=51896099

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410174444.7A Active CN104183510B (zh) 2013-05-20 2014-04-28 半导体装置的制造方法

Country Status (3)

Country Link
US (1) US9117880B2 (enExample)
JP (1) JP5858952B2 (enExample)
CN (1) CN104183510B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106291265A (zh) * 2015-05-13 2017-01-04 无锡华润上华半导体有限公司 Dc-dc电路中开关管的耐压测试方法
CN109643667B (zh) 2016-09-01 2023-08-25 三菱电机株式会社 半导体装置的测定方法
JP7217688B2 (ja) 2019-09-26 2023-02-03 三菱電機株式会社 半導体装置、及び半導体素子の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1181628A (zh) * 1996-10-30 1998-05-13 三星电子株式会社 具有自对准触点半导体存储器件的制造方法
CN1198000A (zh) * 1997-04-08 1998-11-04 索尼株式会社 半导体器件的制造方法
CN101894816A (zh) * 2009-05-20 2010-11-24 瑞萨电子株式会社 半导体器件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2969086B2 (ja) 1996-09-25 1999-11-02 中日本電子株式会社 大電流用小型接触子
JP2003130889A (ja) 2001-10-29 2003-05-08 Vector Semicon Kk 半導体装置検査装置及び検査方法
JP4609983B2 (ja) * 2004-04-30 2011-01-12 ルネサスエレクトロニクス株式会社 電極パッドを備える素子
CH700392B1 (de) * 2009-02-06 2012-12-31 Gerhard Obrist Abgabevorrichtung für die dosierte Abgabe einer Flüssiggasformulierung und Verfahren zur Herstellung der Abgabevorrichtung.
JP5486866B2 (ja) * 2009-07-29 2014-05-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2012064698A (ja) * 2010-09-15 2012-03-29 Ricoh Co Ltd 半導体装置及びそのレイアウト方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1181628A (zh) * 1996-10-30 1998-05-13 三星电子株式会社 具有自对准触点半导体存储器件的制造方法
CN1198000A (zh) * 1997-04-08 1998-11-04 索尼株式会社 半导体器件的制造方法
CN101894816A (zh) * 2009-05-20 2010-11-24 瑞萨电子株式会社 半导体器件

Also Published As

Publication number Publication date
CN104183510A (zh) 2014-12-03
US9117880B2 (en) 2015-08-25
JP5858952B2 (ja) 2016-02-10
JP2014229651A (ja) 2014-12-08
US20140342544A1 (en) 2014-11-20

Similar Documents

Publication Publication Date Title
JP2016025124A (ja) 半導体装置およびその製造方法
JP4387125B2 (ja) 検査方法及び検査装置
US7659559B2 (en) Semiconductor package having insulated metal substrate and method of fabricating the same
CN104183510B (zh) 半导体装置的制造方法
US11610873B2 (en) Semiconductor device and method of manufacturing semiconductor device
CN104282590A (zh) 半导体晶粒及其制备方法和检测该半导体晶粒裂缝的方法
JP5618662B2 (ja) 半導体素子の特性測定方法および半導体装置の製造方法
JP2011049337A (ja) 半導体装置の製造方法
KR101854063B1 (ko) 반도체 장치, 및 그 시험 방법
JP6207716B2 (ja) 半導体装置
JP2018179758A (ja) 電気的接続装置
WO2015132847A1 (ja) Ｉｇｂｔ，パワーモジュール，パワーモジュールの製造方法，および電力変換装置
JP2010108991A (ja) 素子試験方法
CN108231618B (zh) 半导体装置的评价装置及使用了该评价装置的半导体装置的评价方法
JP6686825B2 (ja) 評価装置、半導体装置の評価方法
JP2013030647A (ja) 高電圧試験方法
JP6277010B2 (ja) 絶縁膜の検査方法
JP2022055444A (ja) プローブ装置用電極およびプローブ装置
JP2015213151A (ja) 半導体パッケージおよびこれを備える半導体モジュール
JPH04290270A (ja) Ｍｏｓ型半導体装置の製造方法
JPS62169435A (ja) 半導体集積回路の試験方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant