JP5843323B2 - Esd保護デバイスおよび方法 - Google Patents
Esd保護デバイスおよび方法 Download PDFInfo
- Publication number
- JP5843323B2 JP5843323B2 JP2012550023A JP2012550023A JP5843323B2 JP 5843323 B2 JP5843323 B2 JP 5843323B2 JP 2012550023 A JP2012550023 A JP 2012550023A JP 2012550023 A JP2012550023 A JP 2012550023A JP 5843323 B2 JP5843323 B2 JP 5843323B2
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- collector
- base
- dopant concentration
- esd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/061—Manufacture or treatment of lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/60—Lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/690,771 US8648419B2 (en) | 2010-01-20 | 2010-01-20 | ESD protection device and method |
| US12/690,771 | 2010-01-20 | ||
| PCT/US2011/020358 WO2011090827A2 (en) | 2010-01-20 | 2011-01-06 | Esd protection device and method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013517633A JP2013517633A (ja) | 2013-05-16 |
| JP2013517633A5 JP2013517633A5 (enExample) | 2014-02-20 |
| JP5843323B2 true JP5843323B2 (ja) | 2016-01-13 |
Family
ID=44277438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012550023A Active JP5843323B2 (ja) | 2010-01-20 | 2011-01-06 | Esd保護デバイスおよび方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8648419B2 (enExample) |
| JP (1) | JP5843323B2 (enExample) |
| CN (1) | CN102714206B (enExample) |
| TW (1) | TWI536533B (enExample) |
| WO (1) | WO2011090827A2 (enExample) |
Families Citing this family (80)
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| US9508870B2 (en) * | 2012-04-13 | 2016-11-29 | Mitsubishi Electric Corporation | Diode |
| US8841696B2 (en) * | 2012-04-30 | 2014-09-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | High-trigger current SCR |
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| US8637899B2 (en) | 2012-06-08 | 2014-01-28 | Analog Devices, Inc. | Method and apparatus for protection and high voltage isolation of low voltage communication interface terminals |
| CN103515374B (zh) * | 2012-06-15 | 2015-09-16 | 旺宏电子股份有限公司 | 保护元件以及具有此保护元件的静电放电保护装置 |
| US9490243B2 (en) | 2012-08-22 | 2016-11-08 | Freescale Semiconductor, Inc. | Semiconductor device comprising an ESD protection device, an ESD protection circuitry, an integrated circuit and a method of manufacturing a semiconductor device |
| US8994068B2 (en) * | 2012-08-30 | 2015-03-31 | Freescale Semiconductor, Inc. | ESD protection device |
| WO2014041388A1 (en) | 2012-09-12 | 2014-03-20 | Freescale Semiconductor, Inc. | A semiconductor device and an integrated circuit comprising an esd protection device, esd protection devices and a method of manufacturing the semiconductor device |
| US9099523B2 (en) | 2012-11-02 | 2015-08-04 | Texas Instruments Incorporated | ESD protection circuit with isolated SCR for negative voltage operation |
| US9019667B2 (en) | 2012-11-08 | 2015-04-28 | Freescale Semiconductor Inc. | Protection device and related fabrication methods |
| US8796729B2 (en) | 2012-11-20 | 2014-08-05 | Analog Devices, Inc. | Junction-isolated blocking voltage devices with integrated protection structures and methods of forming the same |
| US9337178B2 (en) * | 2012-12-09 | 2016-05-10 | Semiconductor Components Industries, Llc | Method of forming an ESD device and structure therefor |
| US9006781B2 (en) | 2012-12-19 | 2015-04-14 | Analog Devices, Inc. | Devices for monolithic data conversion interface protection and methods of forming the same |
| US9123540B2 (en) | 2013-01-30 | 2015-09-01 | Analog Devices, Inc. | Apparatus for high speed signal processing interface |
| US8860080B2 (en) | 2012-12-19 | 2014-10-14 | Analog Devices, Inc. | Interface protection device with integrated supply clamp and method of forming the same |
| US9583603B2 (en) * | 2013-02-11 | 2017-02-28 | Nxp Usa, Inc. | ESD protection with integrated LDMOS triggering junction |
| US9275991B2 (en) | 2013-02-13 | 2016-03-01 | Analog Devices, Inc. | Apparatus for transceiver signal isolation and voltage clamp |
| US9147677B2 (en) | 2013-05-16 | 2015-09-29 | Analog Devices Global | Dual-tub junction-isolated voltage clamp devices for protecting low voltage circuitry connected between high voltage interface pins and methods of forming the same |
| US9502890B2 (en) * | 2013-05-22 | 2016-11-22 | Freescale Semiconductor, Inc. | Protection device and related fabrication methods |
| US9129806B2 (en) | 2013-05-22 | 2015-09-08 | Freescale Semiconductor Inc. | Protection device and related fabrication methods |
| US9171832B2 (en) * | 2013-05-24 | 2015-10-27 | Analog Devices, Inc. | Analog switch with high bipolar blocking voltage in low voltage CMOS process |
| KR101975608B1 (ko) * | 2013-06-12 | 2019-05-08 | 매그나칩 반도체 유한회사 | 고전압용 esd 트랜지스터 및 그 정전기 보호 회로 |
| US9659922B2 (en) | 2013-06-13 | 2017-05-23 | Nxp Usa, Inc. | ESD protection device |
| US9054521B2 (en) * | 2013-06-25 | 2015-06-09 | Hong Kong Applied Science & Technology Research Institute Company, Ltd. | Electro-static-discharge (ESD) protection structure with stacked implant junction transistor and parallel resistor and diode paths to lower trigger voltage and raise holding volatge |
| US9543420B2 (en) | 2013-07-19 | 2017-01-10 | Nxp Usa, Inc. | Protection device and related fabrication methods |
| US9130006B2 (en) * | 2013-10-07 | 2015-09-08 | Freescale Semiconductor, Inc. | Semiconductor device with buried conduction path |
| US9177952B2 (en) * | 2013-10-15 | 2015-11-03 | Freescale Semiconductor, Inc. | ESD protection with asymmetrical bipolar-based device |
| WO2015075495A1 (en) * | 2013-11-22 | 2015-05-28 | Freescale Semiconductor, Inc. | Electrostatic discharge protection circuits and structures and methods of manufacture |
| US10483257B2 (en) | 2014-02-18 | 2019-11-19 | Nxp Usa, Inc. | Low voltage NPN with low trigger voltage and high snap back voltage for ESD protection |
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| US9478608B2 (en) | 2014-11-18 | 2016-10-25 | Analog Devices, Inc. | Apparatus and methods for transceiver interface overvoltage clamping |
| US10068894B2 (en) | 2015-01-12 | 2018-09-04 | Analog Devices, Inc. | Low leakage bidirectional clamps and methods of forming the same |
| TWI566419B (zh) * | 2015-02-04 | 2017-01-11 | 世界先進積體電路股份有限公司 | 半導體裝置 |
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| US9893050B2 (en) | 2015-06-30 | 2018-02-13 | Nxp Usa, Inc. | ESD protection structure |
| TWI555163B (zh) * | 2015-07-22 | 2016-10-21 | 新唐科技股份有限公司 | 半導體結構 |
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| US10217733B2 (en) | 2015-09-15 | 2019-02-26 | Semiconductor Components Industries, Llc | Fast SCR structure for ESD protection |
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| US9831233B2 (en) | 2016-04-29 | 2017-11-28 | Analog Devices Global | Apparatuses for communication systems transceiver interfaces |
| US10734806B2 (en) | 2016-07-21 | 2020-08-04 | Analog Devices, Inc. | High voltage clamps with transient activation and activation release control |
| KR102090861B1 (ko) * | 2016-09-07 | 2020-03-18 | 주식회사 디비하이텍 | Esd 보호용 scr 소자 |
| KR102398686B1 (ko) | 2016-09-19 | 2022-05-16 | 주식회사 디비하이텍 | Esd 보호용 소자 |
| US10243047B2 (en) * | 2016-12-08 | 2019-03-26 | Globalfoundries Inc. | Active and passive components with deep trench isolation structures |
| JP6847731B2 (ja) * | 2017-03-29 | 2021-03-24 | エイブリック株式会社 | 半導体装置 |
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| KR102454469B1 (ko) | 2018-04-17 | 2022-10-14 | 주식회사 디비하이텍 | Esd 보호용 scr 소자 |
| US10366975B1 (en) | 2018-05-24 | 2019-07-30 | Globalfoundries Singapore Pte. Ltd. | Electrostatic discharge protective structures |
| US10700056B2 (en) | 2018-09-07 | 2020-06-30 | Analog Devices, Inc. | Apparatus for automotive and communication systems transceiver interfaces |
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| US10665584B1 (en) | 2019-03-07 | 2020-05-26 | Hong Kong Applied Science and Technology Research Insstitute Company, Limited | Low capacitance and high-holding-voltage transient-voltage-suppressor (TVS) device for electro-static-discharge (ESD) protection |
| US10971632B2 (en) * | 2019-06-24 | 2021-04-06 | Semiconductor Components Industries, Llc | High voltage diode on SOI substrate with trench-modified current path |
| US11011509B2 (en) | 2019-09-18 | 2021-05-18 | Globalfoundries Singapore Pte. Ltd. | Electrostatic discharge protection device |
| US11626512B2 (en) | 2021-01-15 | 2023-04-11 | Globalfoundries Singapore Pte. Ltd. | Electrostatic discharge protection devices and methods for fabricating electrostatic discharge protection devices |
| CN115810652A (zh) * | 2021-09-14 | 2023-03-17 | 铠侠股份有限公司 | 半导体装置、保护电路及半导体装置的制造方法 |
| US12051690B2 (en) | 2021-11-11 | 2024-07-30 | Globalfoundries U.S. Inc. | Symmetric bi-directional silicon-controlled rectifier for electrostatic discharge protection |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4705322A (en) * | 1985-07-05 | 1987-11-10 | American Telephone And Telegraph Company, At&T Bell Laboratories | Protection of inductive load switching transistors from inductive surge created overvoltage conditions |
| KR0169359B1 (ko) * | 1995-12-30 | 1999-01-15 | 김광호 | 반도체 장치의 보호 소자 |
| JP3902040B2 (ja) * | 2002-03-25 | 2007-04-04 | 松下電器産業株式会社 | 半導体保護装置 |
| JP2006186225A (ja) * | 2004-12-28 | 2006-07-13 | Nec Electronics Corp | 半導体装置 |
| US7164566B2 (en) | 2004-03-19 | 2007-01-16 | Freescale Semiconductor, Inc. | Electrostatic discharge protection device and method therefore |
| US7285828B2 (en) * | 2005-01-12 | 2007-10-23 | Intersail Americas Inc. | Electrostatic discharge protection device for digital circuits and for applications with input/output bipolar voltage much higher than the core circuit power supply |
| TW200731498A (en) | 2006-02-07 | 2007-08-16 | Anpec Electronics Corp | Electrostatic protection device |
| JP2007242923A (ja) | 2006-03-09 | 2007-09-20 | Matsushita Electric Ind Co Ltd | 半導体集積回路の静電気保護素子 |
| US7514751B2 (en) | 2007-08-02 | 2009-04-07 | National Semiconductor Corporation | SiGe DIAC ESD protection structure |
| US7663190B2 (en) | 2007-10-08 | 2010-02-16 | Intersil Americas Inc. | Tunable voltage isolation ground to ground ESD clamp |
| US7911750B2 (en) | 2008-02-27 | 2011-03-22 | Freescale Semiconductor, Inc. | Resistor triggered electrostatic discharge protection |
| US8193560B2 (en) * | 2009-06-18 | 2012-06-05 | Freescale Semiconductor, Inc. | Voltage limiting devices |
| US8242566B2 (en) * | 2010-01-19 | 2012-08-14 | Freescale Semiconductors, Inc. | Stacked ESD protection |
| KR101710599B1 (ko) * | 2011-01-12 | 2017-02-27 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
-
2010
- 2010-01-20 US US12/690,771 patent/US8648419B2/en active Active
-
2011
- 2011-01-06 JP JP2012550023A patent/JP5843323B2/ja active Active
- 2011-01-06 WO PCT/US2011/020358 patent/WO2011090827A2/en not_active Ceased
- 2011-01-06 CN CN201180006596.0A patent/CN102714206B/zh active Active
- 2011-01-20 TW TW100102139A patent/TWI536533B/zh active
-
2014
- 2014-01-30 US US14/168,813 patent/US9018072B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI536533B (zh) | 2016-06-01 |
| US8648419B2 (en) | 2014-02-11 |
| CN102714206B (zh) | 2015-06-03 |
| US9018072B2 (en) | 2015-04-28 |
| JP2013517633A (ja) | 2013-05-16 |
| CN102714206A (zh) | 2012-10-03 |
| US20140147983A1 (en) | 2014-05-29 |
| WO2011090827A2 (en) | 2011-07-28 |
| US20110176244A1 (en) | 2011-07-21 |
| WO2011090827A3 (en) | 2011-10-20 |
| TW201140790A (en) | 2011-11-16 |
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