JP5843323B2 - Esd保護デバイスおよび方法 - Google Patents

Esd保護デバイスおよび方法 Download PDF

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Publication number
JP5843323B2
JP5843323B2 JP2012550023A JP2012550023A JP5843323B2 JP 5843323 B2 JP5843323 B2 JP 5843323B2 JP 2012550023 A JP2012550023 A JP 2012550023A JP 2012550023 A JP2012550023 A JP 2012550023A JP 5843323 B2 JP5843323 B2 JP 5843323B2
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collector
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dopant concentration
esd
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Japanese (ja)
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JP2013517633A (ja
JP2013517633A5 (enExample
Inventor
ジェンドロン、アモーリー
イーアン ギル、チャイ
イーアン ギル、チャイ
ホン、チャンス
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NXP USA Inc
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NXP USA Inc
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/01Manufacture or treatment
    • H10D10/061Manufacture or treatment of lateral BJTs 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/60Lateral BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137Collector regions of BJTs

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  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP2012550023A 2010-01-20 2011-01-06 Esd保護デバイスおよび方法 Active JP5843323B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/690,771 US8648419B2 (en) 2010-01-20 2010-01-20 ESD protection device and method
US12/690,771 2010-01-20
PCT/US2011/020358 WO2011090827A2 (en) 2010-01-20 2011-01-06 Esd protection device and method

Publications (3)

Publication Number Publication Date
JP2013517633A JP2013517633A (ja) 2013-05-16
JP2013517633A5 JP2013517633A5 (enExample) 2014-02-20
JP5843323B2 true JP5843323B2 (ja) 2016-01-13

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ID=44277438

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012550023A Active JP5843323B2 (ja) 2010-01-20 2011-01-06 Esd保護デバイスおよび方法

Country Status (5)

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US (2) US8648419B2 (enExample)
JP (1) JP5843323B2 (enExample)
CN (1) CN102714206B (enExample)
TW (1) TWI536533B (enExample)
WO (1) WO2011090827A2 (enExample)

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Also Published As

Publication number Publication date
TWI536533B (zh) 2016-06-01
US8648419B2 (en) 2014-02-11
CN102714206B (zh) 2015-06-03
US9018072B2 (en) 2015-04-28
JP2013517633A (ja) 2013-05-16
CN102714206A (zh) 2012-10-03
US20140147983A1 (en) 2014-05-29
WO2011090827A2 (en) 2011-07-28
US20110176244A1 (en) 2011-07-21
WO2011090827A3 (en) 2011-10-20
TW201140790A (en) 2011-11-16

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