JP5837503B2 - プラズマ処理システム内でプラズマの閉じ込め状態を検出するための方法および装置 - Google Patents

プラズマ処理システム内でプラズマの閉じ込め状態を検出するための方法および装置 Download PDF

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JP5837503B2
JP5837503B2 JP2012540099A JP2012540099A JP5837503B2 JP 5837503 B2 JP5837503 B2 JP 5837503B2 JP 2012540099 A JP2012540099 A JP 2012540099A JP 2012540099 A JP2012540099 A JP 2012540099A JP 5837503 B2 JP5837503 B2 JP 5837503B2
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voltage
plasma
open loop
response
center tap
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JP2013511815A5 (enExample
JP2013511815A (ja
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バルコア・ジョン・シー．ジュニア
ロジャース・ジェームス
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/62—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2012540099A 2009-11-19 2010-11-19 プラズマ処理システム内でプラズマの閉じ込め状態を検出するための方法および装置 Active JP5837503B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US26288609P 2009-11-19 2009-11-19
US61/262,886 2009-11-19
US30362810P 2010-02-11 2010-02-11
US61/303,628 2010-02-11
US12/907,859 US8901935B2 (en) 2009-11-19 2010-10-19 Methods and apparatus for detecting the confinement state of plasma in a plasma processing system
US12/907,859 2010-10-19
PCT/US2010/057478 WO2011063262A2 (en) 2009-11-19 2010-11-19 Methods and apparatus for detecting the confinement state of plasma in a plasma processing system

Publications (3)

Publication Number Publication Date
JP2013511815A JP2013511815A (ja) 2013-04-04
JP2013511815A5 JP2013511815A5 (enExample) 2014-01-09
JP5837503B2 true JP5837503B2 (ja) 2015-12-24

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JP2012540099A Active JP5837503B2 (ja) 2009-11-19 2010-11-19 プラズマ処理システム内でプラズマの閉じ込め状態を検出するための方法および装置

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US (1) US8901935B2 (enExample)
JP (1) JP5837503B2 (enExample)
KR (1) KR101821424B1 (enExample)
CN (1) CN102612738B (enExample)
SG (1) SG10201406957PA (enExample)
TW (1) TWI529844B (enExample)
WO (1) WO2011063262A2 (enExample)

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Also Published As

Publication number Publication date
CN102612738A (zh) 2012-07-25
US20110115492A1 (en) 2011-05-19
SG10201406957PA (en) 2014-12-30
CN102612738B (zh) 2016-01-06
WO2011063262A2 (en) 2011-05-26
WO2011063262A3 (en) 2011-09-22
TW201126642A (en) 2011-08-01
US8901935B2 (en) 2014-12-02
KR101821424B1 (ko) 2018-01-23
JP2013511815A (ja) 2013-04-04
KR20120097504A (ko) 2012-09-04
TWI529844B (zh) 2016-04-11

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