TWI529844B - 電漿處理系統中之電漿侷限狀態的偵測方法與設備 - Google Patents
電漿處理系統中之電漿侷限狀態的偵測方法與設備 Download PDFInfo
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- TWI529844B TWI529844B TW099140088A TW99140088A TWI529844B TW I529844 B TWI529844 B TW I529844B TW 099140088 A TW099140088 A TW 099140088A TW 99140088 A TW99140088 A TW 99140088A TW I529844 B TWI529844 B TW I529844B
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- Prior art keywords
- plasma
- voltage
- processing chamber
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Links
- 238000012545 processing Methods 0.000 title claims description 32
- 238000000034 method Methods 0.000 title claims description 25
- 230000008859 change Effects 0.000 claims description 29
- 230000004044 response Effects 0.000 claims description 22
- 238000001514 detection method Methods 0.000 claims description 21
- 238000012544 monitoring process Methods 0.000 claims description 17
- 230000009471 action Effects 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 description 12
- 239000000523 sample Substances 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 238000013461 design Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000001636 atomic emission spectroscopy Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 235000019800 disodium phosphate Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/62—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26288609P | 2009-11-19 | 2009-11-19 | |
| US30362810P | 2010-02-11 | 2010-02-11 | |
| US12/907,859 US8901935B2 (en) | 2009-11-19 | 2010-10-19 | Methods and apparatus for detecting the confinement state of plasma in a plasma processing system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201126642A TW201126642A (en) | 2011-08-01 |
| TWI529844B true TWI529844B (zh) | 2016-04-11 |
Family
ID=46319942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099140088A TWI529844B (zh) | 2009-11-19 | 2010-11-19 | 電漿處理系統中之電漿侷限狀態的偵測方法與設備 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8901935B2 (enExample) |
| JP (1) | JP5837503B2 (enExample) |
| KR (1) | KR101821424B1 (enExample) |
| CN (1) | CN102612738B (enExample) |
| SG (1) | SG10201406957PA (enExample) |
| TW (1) | TWI529844B (enExample) |
| WO (1) | WO2011063262A2 (enExample) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9438984B1 (en) | 2005-08-29 | 2016-09-06 | William F. Ryann | Wearable electronic pieces and organizer |
| US8501631B2 (en) | 2009-11-19 | 2013-08-06 | Lam Research Corporation | Plasma processing system control based on RF voltage |
| US20140256147A1 (en) * | 2011-09-26 | 2014-09-11 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| US9462672B2 (en) | 2012-02-22 | 2016-10-04 | Lam Research Corporation | Adjustment of power and frequency based on three or more states |
| US9171699B2 (en) | 2012-02-22 | 2015-10-27 | Lam Research Corporation | Impedance-based adjustment of power and frequency |
| US9530620B2 (en) * | 2013-03-15 | 2016-12-27 | Lam Research Corporation | Dual control modes |
| US9320126B2 (en) | 2012-12-17 | 2016-04-19 | Lam Research Corporation | Determining a value of a variable on an RF transmission model |
| US9502216B2 (en) | 2013-01-31 | 2016-11-22 | Lam Research Corporation | Using modeling to determine wafer bias associated with a plasma system |
| US9114666B2 (en) | 2012-02-22 | 2015-08-25 | Lam Research Corporation | Methods and apparatus for controlling plasma in a plasma processing system |
| US10128090B2 (en) | 2012-02-22 | 2018-11-13 | Lam Research Corporation | RF impedance model based fault detection |
| US10325759B2 (en) | 2012-02-22 | 2019-06-18 | Lam Research Corporation | Multiple control modes |
| US9295148B2 (en) | 2012-12-14 | 2016-03-22 | Lam Research Corporation | Computation of statistics for statistical data decimation |
| US9390893B2 (en) | 2012-02-22 | 2016-07-12 | Lam Research Corporation | Sub-pulsing during a state |
| US9197196B2 (en) | 2012-02-22 | 2015-11-24 | Lam Research Corporation | State-based adjustment of power and frequency |
| US9842725B2 (en) | 2013-01-31 | 2017-12-12 | Lam Research Corporation | Using modeling to determine ion energy associated with a plasma system |
| US10157729B2 (en) | 2012-02-22 | 2018-12-18 | Lam Research Corporation | Soft pulsing |
| US9368329B2 (en) | 2012-02-22 | 2016-06-14 | Lam Research Corporation | Methods and apparatus for synchronizing RF pulses in a plasma processing system |
| US9404183B2 (en) | 2012-06-08 | 2016-08-02 | Novellus Systems, Inc. | Diagnostic and control systems and methods for substrate processing systems using DC self-bias voltage |
| US9408288B2 (en) | 2012-09-14 | 2016-08-02 | Lam Research Corporation | Edge ramping |
| US9043525B2 (en) | 2012-12-14 | 2015-05-26 | Lam Research Corporation | Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool |
| US9155182B2 (en) | 2013-01-11 | 2015-10-06 | Lam Research Corporation | Tuning a parameter associated with plasma impedance |
| US9779196B2 (en) | 2013-01-31 | 2017-10-03 | Lam Research Corporation | Segmenting a model within a plasma system |
| US9620337B2 (en) | 2013-01-31 | 2017-04-11 | Lam Research Corporation | Determining a malfunctioning device in a plasma system |
| US9107284B2 (en) | 2013-03-13 | 2015-08-11 | Lam Research Corporation | Chamber matching using voltage control mode |
| US9119283B2 (en) | 2013-03-14 | 2015-08-25 | Lam Research Corporation | Chamber matching for power control mode |
| TWI635197B (zh) * | 2013-06-10 | 2018-09-11 | 諾發系統有限公司 | 用於使用直流自偏壓之基板處理系統的診斷及控制系統與方法 |
| US9502221B2 (en) | 2013-07-26 | 2016-11-22 | Lam Research Corporation | Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching |
| US9594105B2 (en) | 2014-01-10 | 2017-03-14 | Lam Research Corporation | Cable power loss determination for virtual metrology |
| US9472410B2 (en) | 2014-03-05 | 2016-10-18 | Applied Materials, Inc. | Pixelated capacitance controlled ESC |
| JP6295119B2 (ja) * | 2014-03-25 | 2018-03-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US10950421B2 (en) | 2014-04-21 | 2021-03-16 | Lam Research Corporation | Using modeling for identifying a location of a fault in an RF transmission system for a plasma system |
| US9536749B2 (en) | 2014-12-15 | 2017-01-03 | Lam Research Corporation | Ion energy control by RF pulse shape |
| KR102344524B1 (ko) * | 2015-08-28 | 2021-12-29 | 세메스 주식회사 | 플라즈마 발생 장치, 그를 포함하는 기판 처리 장치, 및 그 제어 방법 |
| US10622217B2 (en) | 2016-02-04 | 2020-04-14 | Samsung Electronics Co., Ltd. | Method of plasma etching and method of fabricating semiconductor device using the same |
| US11476145B2 (en) * | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
Family Cites Families (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4222838A (en) * | 1978-06-13 | 1980-09-16 | General Motors Corporation | Method for controlling plasma etching rates |
| US5980767A (en) * | 1994-02-25 | 1999-11-09 | Tokyo Electron Limited | Method and devices for detecting the end point of plasma process |
| US5474648A (en) * | 1994-07-29 | 1995-12-12 | Lsi Logic Corporation | Uniform and repeatable plasma processing |
| US5801386A (en) * | 1995-12-11 | 1998-09-01 | Applied Materials, Inc. | Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same |
| US5812361A (en) | 1996-03-29 | 1998-09-22 | Lam Research Corporation | Dynamic feedback electrostatic wafer chuck |
| US5764471A (en) | 1996-05-08 | 1998-06-09 | Applied Materials, Inc. | Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck |
| US5737177A (en) | 1996-10-17 | 1998-04-07 | Applied Materials, Inc. | Apparatus and method for actively controlling the DC potential of a cathode pedestal |
| US5894400A (en) | 1997-05-29 | 1999-04-13 | Wj Semiconductor Equipment Group, Inc. | Method and apparatus for clamping a substrate |
| US5933314A (en) * | 1997-06-27 | 1999-08-03 | Lam Research Corp. | Method and an apparatus for offsetting plasma bias voltage in bi-polar electro-static chucks |
| KR100560886B1 (ko) | 1997-09-17 | 2006-03-13 | 동경 엘렉트론 주식회사 | 가스 플라즈마 프로세스를 감시 및 제어하기 위한 시스템및 방법 |
| US6198616B1 (en) | 1998-04-03 | 2001-03-06 | Applied Materials, Inc. | Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system |
| JP4408313B2 (ja) | 1999-10-29 | 2010-02-03 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| KR20010007406A (ko) * | 1999-06-17 | 2001-01-26 | 조셉 제이. 스위니 | 정전 처크에 의해 발생한 정전력 균형을 맞추는 방법 및장치 |
| JP3436931B2 (ja) * | 2000-05-04 | 2003-08-18 | 東京エレクトロン株式会社 | プラズマを用いて基板を処理するための装置および方法 |
| US7871676B2 (en) | 2000-12-06 | 2011-01-18 | Novellus Systems, Inc. | System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
| WO2002075332A1 (en) * | 2001-03-16 | 2002-09-26 | Tokyo Electron Limited | Impedance monitoring system and method |
| US6522121B2 (en) | 2001-03-20 | 2003-02-18 | Eni Technology, Inc. | Broadband design of a probe analysis system |
| IE20010288A1 (en) | 2001-03-23 | 2002-10-02 | Scient Systems Res Ltd | Endpoint Detection in the Etching of Dielectric Layers |
| US6727655B2 (en) | 2001-10-26 | 2004-04-27 | Mcchesney Jon | Method and apparatus to monitor electrical states at a workpiece in a semiconductor processing chamber |
| JP4006982B2 (ja) | 2001-11-16 | 2007-11-14 | セイコーエプソン株式会社 | プリンタ及びプリンタユニット |
| US6875927B2 (en) * | 2002-03-08 | 2005-04-05 | Applied Materials, Inc. | High temperature DC chucking and RF biasing cable with high voltage isolation for biasable electrostatic chuck applications |
| JP2003282545A (ja) * | 2002-03-26 | 2003-10-03 | Seiko Epson Corp | 半導体装置の製造方法及びプラズマ処理装置 |
| US7505879B2 (en) | 2002-06-05 | 2009-03-17 | Tokyo Electron Limited | Method for generating multivariate analysis model expression for processing apparatus, method for executing multivariate analysis of processing apparatus, control device of processing apparatus and control system for processing apparatus |
| TWI259546B (en) | 2002-06-28 | 2006-08-01 | Tokyo Electron Ltd | Method and system for predicting process performance using material processing tool and sensor data |
| US20040028837A1 (en) | 2002-06-28 | 2004-02-12 | Tokyo Electron Limited | Method and apparatus for plasma processing |
| US6664166B1 (en) | 2002-09-13 | 2003-12-16 | Texas Instruments Incorporated | Control of nichorme resistor temperature coefficient using RF plasma sputter etch |
| US20040060660A1 (en) | 2002-09-26 | 2004-04-01 | Lam Research Inc., A Delaware Corporation | Control of plasma density with broadband RF sensor |
| US7026174B2 (en) * | 2002-09-30 | 2006-04-11 | Lam Research Corporation | Method for reducing wafer arcing |
| TW201041455A (en) | 2002-12-16 | 2010-11-16 | Japan Science & Tech Agency | Plasma generation device, plasma control method, and substrate manufacturing method |
| US20040127031A1 (en) | 2002-12-31 | 2004-07-01 | Tokyo Electron Limited | Method and apparatus for monitoring a plasma in a material processing system |
| JP2004335594A (ja) * | 2003-05-02 | 2004-11-25 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
| US7169625B2 (en) | 2003-07-25 | 2007-01-30 | Applied Materials, Inc. | Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring |
| KR101144018B1 (ko) | 2004-05-28 | 2012-05-09 | 램 리써치 코포레이션 | 복수 ｒｆ 주파수에 반응하는 전극을 갖는 플라즈마 처리기 |
| US7359177B2 (en) * | 2005-05-10 | 2008-04-15 | Applied Materials, Inc. | Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output |
| WO2007014160A2 (en) * | 2005-07-21 | 2007-02-01 | Applied Materials, Inc. | Method and apparatus for in-situ substrate surface arc detection |
| US7722778B2 (en) | 2006-06-28 | 2010-05-25 | Lam Research Corporation | Methods and apparatus for sensing unconfinement in a plasma processing chamber |
| CN100530529C (zh) * | 2006-07-17 | 2009-08-19 | 应用材料公司 | 具有静电卡盘电压反馈控制的双偏置频率等离子体反应器 |
| JP5015517B2 (ja) * | 2006-08-03 | 2012-08-29 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US7758718B1 (en) * | 2006-12-29 | 2010-07-20 | Lam Research Corporation | Reduced electric field arrangement for managing plasma confinement |
| US7728602B2 (en) | 2007-02-16 | 2010-06-01 | Mks Instruments, Inc. | Harmonic derived arc detector |
| US7768269B2 (en) * | 2007-08-15 | 2010-08-03 | Applied Materials, Inc. | Method of multi-location ARC sensing with adaptive threshold comparison |
| TWI492671B (zh) * | 2007-12-13 | 2015-07-11 | Lam Res Corp | 電漿未限制感測器及其方法 |
| US9074285B2 (en) * | 2007-12-13 | 2015-07-07 | Lam Research Corporation | Systems for detecting unconfined-plasma events |
| US8257503B2 (en) * | 2008-05-02 | 2012-09-04 | Lam Research Corporation | Method and apparatus for detecting plasma unconfinement |
| CN102084471B (zh) * | 2008-07-07 | 2012-11-28 | 朗姆研究公司 | 用于检测等离子体处理室中的等离子体不稳定的无源电容耦合静电(cce)探针装置 |
-
2010
- 2010-10-19 US US12/907,859 patent/US8901935B2/en active Active
- 2010-11-19 SG SG10201406957PA patent/SG10201406957PA/en unknown
- 2010-11-19 CN CN201080051817.1A patent/CN102612738B/zh active Active
- 2010-11-19 WO PCT/US2010/057478 patent/WO2011063262A2/en not_active Ceased
- 2010-11-19 JP JP2012540099A patent/JP5837503B2/ja active Active
- 2010-11-19 KR KR1020127012991A patent/KR101821424B1/ko active Active
- 2010-11-19 TW TW099140088A patent/TWI529844B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| CN102612738A (zh) | 2012-07-25 |
| US20110115492A1 (en) | 2011-05-19 |
| SG10201406957PA (en) | 2014-12-30 |
| CN102612738B (zh) | 2016-01-06 |
| WO2011063262A2 (en) | 2011-05-26 |
| WO2011063262A3 (en) | 2011-09-22 |
| JP5837503B2 (ja) | 2015-12-24 |
| TW201126642A (en) | 2011-08-01 |
| US8901935B2 (en) | 2014-12-02 |
| KR101821424B1 (ko) | 2018-01-23 |
| JP2013511815A (ja) | 2013-04-04 |
| KR20120097504A (ko) | 2012-09-04 |
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