SG10201406957PA - Methods and apparatus for detecting the confinement state of plasma in a plasma processing system - Google Patents
Methods and apparatus for detecting the confinement state of plasma in a plasma processing systemInfo
- Publication number
- SG10201406957PA SG10201406957PA SG10201406957PA SG10201406957PA SG10201406957PA SG 10201406957P A SG10201406957P A SG 10201406957PA SG 10201406957P A SG10201406957P A SG 10201406957PA SG 10201406957P A SG10201406957P A SG 10201406957PA SG 10201406957P A SG10201406957P A SG 10201406957PA
- Authority
- SG
- Singapore
- Prior art keywords
- plasma
- detecting
- methods
- state
- esc
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000001514 detection method Methods 0.000 abstract 1
- 238000012544 monitoring process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/62—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26288609P | 2009-11-19 | 2009-11-19 | |
| US30362810P | 2010-02-11 | 2010-02-11 | |
| US12/907,859 US8901935B2 (en) | 2009-11-19 | 2010-10-19 | Methods and apparatus for detecting the confinement state of plasma in a plasma processing system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201406957PA true SG10201406957PA (en) | 2014-12-30 |
Family
ID=46319942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201406957PA SG10201406957PA (en) | 2009-11-19 | 2010-11-19 | Methods and apparatus for detecting the confinement state of plasma in a plasma processing system |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8901935B2 (enExample) |
| JP (1) | JP5837503B2 (enExample) |
| KR (1) | KR101821424B1 (enExample) |
| CN (1) | CN102612738B (enExample) |
| SG (1) | SG10201406957PA (enExample) |
| TW (1) | TWI529844B (enExample) |
| WO (1) | WO2011063262A2 (enExample) |
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| US9438984B1 (en) | 2005-08-29 | 2016-09-06 | William F. Ryann | Wearable electronic pieces and organizer |
| US8501631B2 (en) | 2009-11-19 | 2013-08-06 | Lam Research Corporation | Plasma processing system control based on RF voltage |
| JPWO2013046640A1 (ja) * | 2011-09-26 | 2015-03-26 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US9390893B2 (en) | 2012-02-22 | 2016-07-12 | Lam Research Corporation | Sub-pulsing during a state |
| US9842725B2 (en) | 2013-01-31 | 2017-12-12 | Lam Research Corporation | Using modeling to determine ion energy associated with a plasma system |
| US9530620B2 (en) * | 2013-03-15 | 2016-12-27 | Lam Research Corporation | Dual control modes |
| US10325759B2 (en) | 2012-02-22 | 2019-06-18 | Lam Research Corporation | Multiple control modes |
| US10157729B2 (en) | 2012-02-22 | 2018-12-18 | Lam Research Corporation | Soft pulsing |
| US9197196B2 (en) | 2012-02-22 | 2015-11-24 | Lam Research Corporation | State-based adjustment of power and frequency |
| US9114666B2 (en) | 2012-02-22 | 2015-08-25 | Lam Research Corporation | Methods and apparatus for controlling plasma in a plasma processing system |
| US9502216B2 (en) | 2013-01-31 | 2016-11-22 | Lam Research Corporation | Using modeling to determine wafer bias associated with a plasma system |
| US9462672B2 (en) | 2012-02-22 | 2016-10-04 | Lam Research Corporation | Adjustment of power and frequency based on three or more states |
| US9171699B2 (en) | 2012-02-22 | 2015-10-27 | Lam Research Corporation | Impedance-based adjustment of power and frequency |
| US9320126B2 (en) | 2012-12-17 | 2016-04-19 | Lam Research Corporation | Determining a value of a variable on an RF transmission model |
| US9368329B2 (en) | 2012-02-22 | 2016-06-14 | Lam Research Corporation | Methods and apparatus for synchronizing RF pulses in a plasma processing system |
| US10128090B2 (en) | 2012-02-22 | 2018-11-13 | Lam Research Corporation | RF impedance model based fault detection |
| US9295148B2 (en) | 2012-12-14 | 2016-03-22 | Lam Research Corporation | Computation of statistics for statistical data decimation |
| US9404183B2 (en) | 2012-06-08 | 2016-08-02 | Novellus Systems, Inc. | Diagnostic and control systems and methods for substrate processing systems using DC self-bias voltage |
| US9408288B2 (en) | 2012-09-14 | 2016-08-02 | Lam Research Corporation | Edge ramping |
| US9043525B2 (en) | 2012-12-14 | 2015-05-26 | Lam Research Corporation | Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool |
| US9155182B2 (en) | 2013-01-11 | 2015-10-06 | Lam Research Corporation | Tuning a parameter associated with plasma impedance |
| US9779196B2 (en) | 2013-01-31 | 2017-10-03 | Lam Research Corporation | Segmenting a model within a plasma system |
| US9620337B2 (en) | 2013-01-31 | 2017-04-11 | Lam Research Corporation | Determining a malfunctioning device in a plasma system |
| US9107284B2 (en) | 2013-03-13 | 2015-08-11 | Lam Research Corporation | Chamber matching using voltage control mode |
| US9119283B2 (en) | 2013-03-14 | 2015-08-25 | Lam Research Corporation | Chamber matching for power control mode |
| TWI635197B (zh) * | 2013-06-10 | 2018-09-11 | 諾發系統有限公司 | 用於使用直流自偏壓之基板處理系統的診斷及控制系統與方法 |
| US9502221B2 (en) | 2013-07-26 | 2016-11-22 | Lam Research Corporation | Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching |
| US9594105B2 (en) | 2014-01-10 | 2017-03-14 | Lam Research Corporation | Cable power loss determination for virtual metrology |
| US9472410B2 (en) | 2014-03-05 | 2016-10-18 | Applied Materials, Inc. | Pixelated capacitance controlled ESC |
| JP6295119B2 (ja) * | 2014-03-25 | 2018-03-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US10950421B2 (en) | 2014-04-21 | 2021-03-16 | Lam Research Corporation | Using modeling for identifying a location of a fault in an RF transmission system for a plasma system |
| US9536749B2 (en) | 2014-12-15 | 2017-01-03 | Lam Research Corporation | Ion energy control by RF pulse shape |
| KR102344524B1 (ko) * | 2015-08-28 | 2021-12-29 | 세메스 주식회사 | 플라즈마 발생 장치, 그를 포함하는 기판 처리 장치, 및 그 제어 방법 |
| US10622217B2 (en) | 2016-02-04 | 2020-04-14 | Samsung Electronics Co., Ltd. | Method of plasma etching and method of fabricating semiconductor device using the same |
| US11476145B2 (en) * | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
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| TWI492671B (zh) * | 2007-12-13 | 2015-07-11 | Lam Res Corp | 電漿未限制感測器及其方法 |
| US9074285B2 (en) | 2007-12-13 | 2015-07-07 | Lam Research Corporation | Systems for detecting unconfined-plasma events |
| US8257503B2 (en) * | 2008-05-02 | 2012-09-04 | Lam Research Corporation | Method and apparatus for detecting plasma unconfinement |
| KR101606736B1 (ko) * | 2008-07-07 | 2016-03-28 | 램 리써치 코포레이션 | 플라즈마 프로세싱 챔버에서 플라즈마 불안정성을 검출하기 위한 패시브 용량성-결합된 정전식 (cce) 프로브 장치 |
-
2010
- 2010-10-19 US US12/907,859 patent/US8901935B2/en active Active
- 2010-11-19 CN CN201080051817.1A patent/CN102612738B/zh active Active
- 2010-11-19 TW TW099140088A patent/TWI529844B/zh active
- 2010-11-19 SG SG10201406957PA patent/SG10201406957PA/en unknown
- 2010-11-19 WO PCT/US2010/057478 patent/WO2011063262A2/en not_active Ceased
- 2010-11-19 KR KR1020127012991A patent/KR101821424B1/ko active Active
- 2010-11-19 JP JP2012540099A patent/JP5837503B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US8901935B2 (en) | 2014-12-02 |
| TW201126642A (en) | 2011-08-01 |
| JP5837503B2 (ja) | 2015-12-24 |
| JP2013511815A (ja) | 2013-04-04 |
| CN102612738A (zh) | 2012-07-25 |
| TWI529844B (zh) | 2016-04-11 |
| KR101821424B1 (ko) | 2018-01-23 |
| WO2011063262A2 (en) | 2011-05-26 |
| KR20120097504A (ko) | 2012-09-04 |
| CN102612738B (zh) | 2016-01-06 |
| US20110115492A1 (en) | 2011-05-19 |
| WO2011063262A3 (en) | 2011-09-22 |
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