JP2013511815A5 - - Google Patents
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- JP2013511815A5 JP2013511815A5 JP2012540099A JP2012540099A JP2013511815A5 JP 2013511815 A5 JP2013511815 A5 JP 2013511815A5 JP 2012540099 A JP2012540099 A JP 2012540099A JP 2012540099 A JP2012540099 A JP 2012540099A JP 2013511815 A5 JP2013511815 A5 JP 2013511815A5
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- Prior art keywords
- voltage
- open loop
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- 238000000034 method Methods 0.000 claims description 28
- 238000012544 monitoring process Methods 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 8
- 238000012937 correction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26288609P | 2009-11-19 | 2009-11-19 | |
| US61/262,886 | 2009-11-19 | ||
| US30362810P | 2010-02-11 | 2010-02-11 | |
| US61/303,628 | 2010-02-11 | ||
| US12/907,859 US8901935B2 (en) | 2009-11-19 | 2010-10-19 | Methods and apparatus for detecting the confinement state of plasma in a plasma processing system |
| US12/907,859 | 2010-10-19 | ||
| PCT/US2010/057478 WO2011063262A2 (en) | 2009-11-19 | 2010-11-19 | Methods and apparatus for detecting the confinement state of plasma in a plasma processing system |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013511815A JP2013511815A (ja) | 2013-04-04 |
| JP2013511815A5 true JP2013511815A5 (enExample) | 2014-01-09 |
| JP5837503B2 JP5837503B2 (ja) | 2015-12-24 |
Family
ID=46319942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012540099A Active JP5837503B2 (ja) | 2009-11-19 | 2010-11-19 | プラズマ処理システム内でプラズマの閉じ込め状態を検出するための方法および装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8901935B2 (enExample) |
| JP (1) | JP5837503B2 (enExample) |
| KR (1) | KR101821424B1 (enExample) |
| CN (1) | CN102612738B (enExample) |
| SG (1) | SG10201406957PA (enExample) |
| TW (1) | TWI529844B (enExample) |
| WO (1) | WO2011063262A2 (enExample) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9438984B1 (en) | 2005-08-29 | 2016-09-06 | William F. Ryann | Wearable electronic pieces and organizer |
| US8501631B2 (en) | 2009-11-19 | 2013-08-06 | Lam Research Corporation | Plasma processing system control based on RF voltage |
| US20140256147A1 (en) * | 2011-09-26 | 2014-09-11 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| US9462672B2 (en) | 2012-02-22 | 2016-10-04 | Lam Research Corporation | Adjustment of power and frequency based on three or more states |
| US9171699B2 (en) | 2012-02-22 | 2015-10-27 | Lam Research Corporation | Impedance-based adjustment of power and frequency |
| US9530620B2 (en) * | 2013-03-15 | 2016-12-27 | Lam Research Corporation | Dual control modes |
| US9320126B2 (en) | 2012-12-17 | 2016-04-19 | Lam Research Corporation | Determining a value of a variable on an RF transmission model |
| US9502216B2 (en) | 2013-01-31 | 2016-11-22 | Lam Research Corporation | Using modeling to determine wafer bias associated with a plasma system |
| US9114666B2 (en) | 2012-02-22 | 2015-08-25 | Lam Research Corporation | Methods and apparatus for controlling plasma in a plasma processing system |
| US10128090B2 (en) | 2012-02-22 | 2018-11-13 | Lam Research Corporation | RF impedance model based fault detection |
| US10325759B2 (en) | 2012-02-22 | 2019-06-18 | Lam Research Corporation | Multiple control modes |
| US9295148B2 (en) | 2012-12-14 | 2016-03-22 | Lam Research Corporation | Computation of statistics for statistical data decimation |
| US9390893B2 (en) | 2012-02-22 | 2016-07-12 | Lam Research Corporation | Sub-pulsing during a state |
| US9197196B2 (en) | 2012-02-22 | 2015-11-24 | Lam Research Corporation | State-based adjustment of power and frequency |
| US9842725B2 (en) | 2013-01-31 | 2017-12-12 | Lam Research Corporation | Using modeling to determine ion energy associated with a plasma system |
| US10157729B2 (en) | 2012-02-22 | 2018-12-18 | Lam Research Corporation | Soft pulsing |
| US9368329B2 (en) | 2012-02-22 | 2016-06-14 | Lam Research Corporation | Methods and apparatus for synchronizing RF pulses in a plasma processing system |
| US9404183B2 (en) | 2012-06-08 | 2016-08-02 | Novellus Systems, Inc. | Diagnostic and control systems and methods for substrate processing systems using DC self-bias voltage |
| US9408288B2 (en) | 2012-09-14 | 2016-08-02 | Lam Research Corporation | Edge ramping |
| US9043525B2 (en) | 2012-12-14 | 2015-05-26 | Lam Research Corporation | Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool |
| US9155182B2 (en) | 2013-01-11 | 2015-10-06 | Lam Research Corporation | Tuning a parameter associated with plasma impedance |
| US9779196B2 (en) | 2013-01-31 | 2017-10-03 | Lam Research Corporation | Segmenting a model within a plasma system |
| US9620337B2 (en) | 2013-01-31 | 2017-04-11 | Lam Research Corporation | Determining a malfunctioning device in a plasma system |
| US9107284B2 (en) | 2013-03-13 | 2015-08-11 | Lam Research Corporation | Chamber matching using voltage control mode |
| US9119283B2 (en) | 2013-03-14 | 2015-08-25 | Lam Research Corporation | Chamber matching for power control mode |
| TWI635197B (zh) * | 2013-06-10 | 2018-09-11 | 諾發系統有限公司 | 用於使用直流自偏壓之基板處理系統的診斷及控制系統與方法 |
| US9502221B2 (en) | 2013-07-26 | 2016-11-22 | Lam Research Corporation | Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching |
| US9594105B2 (en) | 2014-01-10 | 2017-03-14 | Lam Research Corporation | Cable power loss determination for virtual metrology |
| US9472410B2 (en) | 2014-03-05 | 2016-10-18 | Applied Materials, Inc. | Pixelated capacitance controlled ESC |
| JP6295119B2 (ja) * | 2014-03-25 | 2018-03-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US10950421B2 (en) | 2014-04-21 | 2021-03-16 | Lam Research Corporation | Using modeling for identifying a location of a fault in an RF transmission system for a plasma system |
| US9536749B2 (en) | 2014-12-15 | 2017-01-03 | Lam Research Corporation | Ion energy control by RF pulse shape |
| KR102344524B1 (ko) * | 2015-08-28 | 2021-12-29 | 세메스 주식회사 | 플라즈마 발생 장치, 그를 포함하는 기판 처리 장치, 및 그 제어 방법 |
| US10622217B2 (en) | 2016-02-04 | 2020-04-14 | Samsung Electronics Co., Ltd. | Method of plasma etching and method of fabricating semiconductor device using the same |
| US11476145B2 (en) * | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
Family Cites Families (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4222838A (en) * | 1978-06-13 | 1980-09-16 | General Motors Corporation | Method for controlling plasma etching rates |
| US5980767A (en) * | 1994-02-25 | 1999-11-09 | Tokyo Electron Limited | Method and devices for detecting the end point of plasma process |
| US5474648A (en) * | 1994-07-29 | 1995-12-12 | Lsi Logic Corporation | Uniform and repeatable plasma processing |
| US5801386A (en) * | 1995-12-11 | 1998-09-01 | Applied Materials, Inc. | Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same |
| US5812361A (en) | 1996-03-29 | 1998-09-22 | Lam Research Corporation | Dynamic feedback electrostatic wafer chuck |
| US5764471A (en) | 1996-05-08 | 1998-06-09 | Applied Materials, Inc. | Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck |
| US5737177A (en) | 1996-10-17 | 1998-04-07 | Applied Materials, Inc. | Apparatus and method for actively controlling the DC potential of a cathode pedestal |
| US5894400A (en) | 1997-05-29 | 1999-04-13 | Wj Semiconductor Equipment Group, Inc. | Method and apparatus for clamping a substrate |
| US5933314A (en) * | 1997-06-27 | 1999-08-03 | Lam Research Corp. | Method and an apparatus for offsetting plasma bias voltage in bi-polar electro-static chucks |
| KR100560886B1 (ko) | 1997-09-17 | 2006-03-13 | 동경 엘렉트론 주식회사 | 가스 플라즈마 프로세스를 감시 및 제어하기 위한 시스템및 방법 |
| US6198616B1 (en) | 1998-04-03 | 2001-03-06 | Applied Materials, Inc. | Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system |
| JP4408313B2 (ja) | 1999-10-29 | 2010-02-03 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| KR20010007406A (ko) * | 1999-06-17 | 2001-01-26 | 조셉 제이. 스위니 | 정전 처크에 의해 발생한 정전력 균형을 맞추는 방법 및장치 |
| JP3436931B2 (ja) * | 2000-05-04 | 2003-08-18 | 東京エレクトロン株式会社 | プラズマを用いて基板を処理するための装置および方法 |
| US7871676B2 (en) | 2000-12-06 | 2011-01-18 | Novellus Systems, Inc. | System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
| WO2002075332A1 (en) * | 2001-03-16 | 2002-09-26 | Tokyo Electron Limited | Impedance monitoring system and method |
| US6522121B2 (en) | 2001-03-20 | 2003-02-18 | Eni Technology, Inc. | Broadband design of a probe analysis system |
| IE20010288A1 (en) | 2001-03-23 | 2002-10-02 | Scient Systems Res Ltd | Endpoint Detection in the Etching of Dielectric Layers |
| US6727655B2 (en) | 2001-10-26 | 2004-04-27 | Mcchesney Jon | Method and apparatus to monitor electrical states at a workpiece in a semiconductor processing chamber |
| JP4006982B2 (ja) | 2001-11-16 | 2007-11-14 | セイコーエプソン株式会社 | プリンタ及びプリンタユニット |
| US6875927B2 (en) * | 2002-03-08 | 2005-04-05 | Applied Materials, Inc. | High temperature DC chucking and RF biasing cable with high voltage isolation for biasable electrostatic chuck applications |
| JP2003282545A (ja) * | 2002-03-26 | 2003-10-03 | Seiko Epson Corp | 半導体装置の製造方法及びプラズマ処理装置 |
| US7505879B2 (en) | 2002-06-05 | 2009-03-17 | Tokyo Electron Limited | Method for generating multivariate analysis model expression for processing apparatus, method for executing multivariate analysis of processing apparatus, control device of processing apparatus and control system for processing apparatus |
| TWI259546B (en) | 2002-06-28 | 2006-08-01 | Tokyo Electron Ltd | Method and system for predicting process performance using material processing tool and sensor data |
| US20040028837A1 (en) | 2002-06-28 | 2004-02-12 | Tokyo Electron Limited | Method and apparatus for plasma processing |
| US6664166B1 (en) | 2002-09-13 | 2003-12-16 | Texas Instruments Incorporated | Control of nichorme resistor temperature coefficient using RF plasma sputter etch |
| US20040060660A1 (en) | 2002-09-26 | 2004-04-01 | Lam Research Inc., A Delaware Corporation | Control of plasma density with broadband RF sensor |
| US7026174B2 (en) * | 2002-09-30 | 2006-04-11 | Lam Research Corporation | Method for reducing wafer arcing |
| TW201041455A (en) | 2002-12-16 | 2010-11-16 | Japan Science & Tech Agency | Plasma generation device, plasma control method, and substrate manufacturing method |
| US20040127031A1 (en) | 2002-12-31 | 2004-07-01 | Tokyo Electron Limited | Method and apparatus for monitoring a plasma in a material processing system |
| JP2004335594A (ja) * | 2003-05-02 | 2004-11-25 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
| US7169625B2 (en) | 2003-07-25 | 2007-01-30 | Applied Materials, Inc. | Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring |
| KR101144018B1 (ko) | 2004-05-28 | 2012-05-09 | 램 리써치 코포레이션 | 복수 rf 주파수에 반응하는 전극을 갖는 플라즈마 처리기 |
| US7359177B2 (en) * | 2005-05-10 | 2008-04-15 | Applied Materials, Inc. | Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output |
| WO2007014160A2 (en) * | 2005-07-21 | 2007-02-01 | Applied Materials, Inc. | Method and apparatus for in-situ substrate surface arc detection |
| US7722778B2 (en) | 2006-06-28 | 2010-05-25 | Lam Research Corporation | Methods and apparatus for sensing unconfinement in a plasma processing chamber |
| CN100530529C (zh) * | 2006-07-17 | 2009-08-19 | 应用材料公司 | 具有静电卡盘电压反馈控制的双偏置频率等离子体反应器 |
| JP5015517B2 (ja) * | 2006-08-03 | 2012-08-29 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US7758718B1 (en) * | 2006-12-29 | 2010-07-20 | Lam Research Corporation | Reduced electric field arrangement for managing plasma confinement |
| US7728602B2 (en) | 2007-02-16 | 2010-06-01 | Mks Instruments, Inc. | Harmonic derived arc detector |
| US7768269B2 (en) * | 2007-08-15 | 2010-08-03 | Applied Materials, Inc. | Method of multi-location ARC sensing with adaptive threshold comparison |
| TWI492671B (zh) * | 2007-12-13 | 2015-07-11 | Lam Res Corp | 電漿未限制感測器及其方法 |
| US9074285B2 (en) * | 2007-12-13 | 2015-07-07 | Lam Research Corporation | Systems for detecting unconfined-plasma events |
| US8257503B2 (en) * | 2008-05-02 | 2012-09-04 | Lam Research Corporation | Method and apparatus for detecting plasma unconfinement |
| CN102084471B (zh) * | 2008-07-07 | 2012-11-28 | 朗姆研究公司 | 用于检测等离子体处理室中的等离子体不稳定的无源电容耦合静电(cce)探针装置 |
-
2010
- 2010-10-19 US US12/907,859 patent/US8901935B2/en active Active
- 2010-11-19 SG SG10201406957PA patent/SG10201406957PA/en unknown
- 2010-11-19 CN CN201080051817.1A patent/CN102612738B/zh active Active
- 2010-11-19 WO PCT/US2010/057478 patent/WO2011063262A2/en not_active Ceased
- 2010-11-19 JP JP2012540099A patent/JP5837503B2/ja active Active
- 2010-11-19 KR KR1020127012991A patent/KR101821424B1/ko active Active
- 2010-11-19 TW TW099140088A patent/TWI529844B/zh active
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