JP2013502718A5 - - Google Patents
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- Publication number
- JP2013502718A5 JP2013502718A5 JP2012525242A JP2012525242A JP2013502718A5 JP 2013502718 A5 JP2013502718 A5 JP 2013502718A5 JP 2012525242 A JP2012525242 A JP 2012525242A JP 2012525242 A JP2012525242 A JP 2012525242A JP 2013502718 A5 JP2013502718 A5 JP 2013502718A5
- Authority
- JP
- Japan
- Prior art keywords
- edge ring
- contact
- hot edge
- detector
- operable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000004891 communication Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/545,293 | 2009-08-21 | ||
| US12/545,293 US9299539B2 (en) | 2009-08-21 | 2009-08-21 | Method and apparatus for measuring wafer bias potential |
| PCT/IB2010/053735 WO2011021160A2 (en) | 2009-08-21 | 2010-08-18 | Method and apparatus for measuring wafer bias potential |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013502718A JP2013502718A (ja) | 2013-01-24 |
| JP2013502718A5 true JP2013502718A5 (enExample) | 2013-09-19 |
| JP5661113B2 JP5661113B2 (ja) | 2015-01-28 |
Family
ID=43604835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012525242A Expired - Fee Related JP5661113B2 (ja) | 2009-08-21 | 2010-08-18 | ウエハバイアス電位を測定するための方法および装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9299539B2 (enExample) |
| JP (1) | JP5661113B2 (enExample) |
| KR (1) | KR20120060827A (enExample) |
| CN (1) | CN102484062B (enExample) |
| SG (2) | SG178285A1 (enExample) |
| TW (1) | TWI562259B (enExample) |
| WO (1) | WO2011021160A2 (enExample) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013511814A (ja) * | 2009-11-19 | 2013-04-04 | ラム リサーチ コーポレーション | プラズマ処理システムを制御するための方法および装置 |
| US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| EP3143160B1 (en) | 2014-05-13 | 2019-11-06 | Myriad Genetics, Inc. | Gene signatures for cancer prognosis |
| US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US9728437B2 (en) * | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
| US20160225652A1 (en) * | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US12456611B2 (en) * | 2016-06-13 | 2025-10-28 | Applied Materials, Inc. | Systems and methods for controlling a voltage waveform at a substrate during plasma processing |
| US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| JP7176860B6 (ja) | 2017-05-17 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 前駆体の流れを改善する半導体処理チャンバ |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
| US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
| CN109243955B (zh) * | 2017-07-11 | 2020-10-13 | 北京北方华创微电子装备有限公司 | 等离子体起辉状态监测方法及监测装置和半导体处理设备 |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
| US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
| JP7061889B2 (ja) * | 2018-02-15 | 2022-05-02 | 東京エレクトロン株式会社 | 被処理体の載置装置及び処理装置 |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
| US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
| US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
| US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
| US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
| US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| JP7145041B2 (ja) * | 2018-11-08 | 2022-09-30 | 東京エレクトロン株式会社 | 基板支持器、プラズマ処理装置、及びフォーカスリング |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
| JP7174687B2 (ja) * | 2019-11-29 | 2022-11-17 | 東京エレクトロン株式会社 | プラズマ処理装置及びエッチング方法 |
| US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
| JP2020155489A (ja) * | 2019-03-18 | 2020-09-24 | キオクシア株式会社 | 半導体製造装置および半導体装置の製造方法 |
| WO2024258662A1 (en) * | 2023-06-15 | 2024-12-19 | Applied Materials, Inc. | Grounding device for thin film formation using plasma |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6036877A (en) * | 1991-06-27 | 2000-03-14 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US5557215A (en) | 1993-05-12 | 1996-09-17 | Tokyo Electron Limited | Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus |
| US6042686A (en) * | 1995-06-30 | 2000-03-28 | Lam Research Corporation | Power segmented electrode |
| US5748434A (en) * | 1996-06-14 | 1998-05-05 | Applied Materials, Inc. | Shield for an electrostatic chuck |
| US5737177A (en) | 1996-10-17 | 1998-04-07 | Applied Materials, Inc. | Apparatus and method for actively controlling the DC potential of a cathode pedestal |
| US6284093B1 (en) * | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
| US5942889A (en) | 1997-06-20 | 1999-08-24 | Applied Materials, Inc. | Capacitive probe for in situ measurement of wafer DC bias voltage |
| JP3296292B2 (ja) | 1998-06-26 | 2002-06-24 | 松下電器産業株式会社 | エッチング方法、クリーニング方法、及びプラズマ処理装置 |
| US6215640B1 (en) * | 1998-12-10 | 2001-04-10 | Applied Materials, Inc. | Apparatus and method for actively controlling surface potential of an electrostatic chuck |
| US6409896B2 (en) | 1999-12-01 | 2002-06-25 | Applied Materials, Inc. | Method and apparatus for semiconductor wafer process monitoring |
| TW483037B (en) | 2000-03-24 | 2002-04-11 | Hitachi Ltd | Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe |
| JP3659180B2 (ja) * | 2000-03-24 | 2005-06-15 | 株式会社日立製作所 | 半導体製造装置および処理方法、およびウエハ電位プローブ |
| US6440219B1 (en) * | 2000-06-07 | 2002-08-27 | Simplus Systems Corporation | Replaceable shielding apparatus |
| JP3792999B2 (ja) * | 2000-06-28 | 2006-07-05 | 株式会社東芝 | プラズマ処理装置 |
| TW478026B (en) * | 2000-08-25 | 2002-03-01 | Hitachi Ltd | Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield |
| US6475336B1 (en) | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
| JP4378887B2 (ja) | 2001-03-07 | 2009-12-09 | パナソニック株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| KR100488412B1 (ko) * | 2001-06-13 | 2005-05-11 | 가부시키가이샤 덴소 | 내장된 전기소자를 갖는 인쇄 배선 기판 및 그 제조 방법 |
| US6856147B2 (en) * | 2003-01-15 | 2005-02-15 | Daimlerchrysler Corporation | Resistive load measurement system |
| CN100418187C (zh) * | 2003-02-07 | 2008-09-10 | 东京毅力科创株式会社 | 等离子体处理装置、环形部件和等离子体处理方法 |
| US7064812B2 (en) * | 2003-08-19 | 2006-06-20 | Tokyo Electron Limited | Method of using a sensor gas to determine erosion level of consumable system components |
| US7658816B2 (en) * | 2003-09-05 | 2010-02-09 | Tokyo Electron Limited | Focus ring and plasma processing apparatus |
| JP2005310945A (ja) | 2004-04-20 | 2005-11-04 | Hitachi High-Technologies Corp | 半導体製造装置およびウェハの静電吸着方法・除電方法 |
| JP4920991B2 (ja) | 2006-02-22 | 2012-04-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| US7728613B2 (en) * | 2006-11-20 | 2010-06-01 | Analog Devices, Inc. | Device under test pogo pin type contact element |
| US7837827B2 (en) | 2007-06-28 | 2010-11-23 | Lam Research Corporation | Edge ring arrangements for substrate processing |
| KR20090049187A (ko) | 2007-11-13 | 2009-05-18 | 주식회사 동부하이텍 | 베벨 식각 장치 |
| JP5281309B2 (ja) * | 2008-03-28 | 2013-09-04 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体 |
| US20100018648A1 (en) * | 2008-07-23 | 2010-01-28 | Applied Marterials, Inc. | Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring |
-
2009
- 2009-08-21 US US12/545,293 patent/US9299539B2/en active Active
-
2010
- 2010-08-18 SG SG2012008272A patent/SG178285A1/en unknown
- 2010-08-18 CN CN201080036933.6A patent/CN102484062B/zh active Active
- 2010-08-18 WO PCT/IB2010/053735 patent/WO2011021160A2/en not_active Ceased
- 2010-08-18 JP JP2012525242A patent/JP5661113B2/ja not_active Expired - Fee Related
- 2010-08-18 SG SG10201404395UA patent/SG10201404395UA/en unknown
- 2010-08-18 KR KR1020127004327A patent/KR20120060827A/ko not_active Abandoned
- 2010-08-20 TW TW099127916A patent/TWI562259B/zh not_active IP Right Cessation
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