TWI562259B - Method and apparatus for measuring wafer bias potential - Google Patents

Method and apparatus for measuring wafer bias potential

Info

Publication number
TWI562259B
TWI562259B TW099127916A TW99127916A TWI562259B TW I562259 B TWI562259 B TW I562259B TW 099127916 A TW099127916 A TW 099127916A TW 99127916 A TW99127916 A TW 99127916A TW I562259 B TWI562259 B TW I562259B
Authority
TW
Taiwan
Prior art keywords
bias potential
wafer bias
measuring wafer
measuring
potential
Prior art date
Application number
TW099127916A
Other languages
English (en)
Other versions
TW201133678A (en
Inventor
Konstantin Makhratchev
John Valcore
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW201133678A publication Critical patent/TW201133678A/zh
Application granted granted Critical
Publication of TWI562259B publication Critical patent/TWI562259B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Drying Of Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Plasma Technology (AREA)
TW099127916A 2009-08-21 2010-08-20 Method and apparatus for measuring wafer bias potential TWI562259B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/545,293 US9299539B2 (en) 2009-08-21 2009-08-21 Method and apparatus for measuring wafer bias potential

Publications (2)

Publication Number Publication Date
TW201133678A TW201133678A (en) 2011-10-01
TWI562259B true TWI562259B (en) 2016-12-11

Family

ID=43604835

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099127916A TWI562259B (en) 2009-08-21 2010-08-20 Method and apparatus for measuring wafer bias potential

Country Status (7)

Country Link
US (1) US9299539B2 (zh)
JP (1) JP5661113B2 (zh)
KR (1) KR20120060827A (zh)
CN (1) CN102484062B (zh)
SG (2) SG10201404395UA (zh)
TW (1) TWI562259B (zh)
WO (1) WO2011021160A2 (zh)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013511814A (ja) * 2009-11-19 2013-04-04 ラム リサーチ コーポレーション プラズマ処理システムを制御するための方法および装置
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
CA2947624A1 (en) 2014-05-13 2015-11-19 Myriad Genetics, Inc. Gene signatures for cancer prognosis
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US20160225652A1 (en) * 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) * 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US20170358431A1 (en) * 2016-06-13 2017-12-14 Applied Materials, Inc. Systems and methods for controlling a voltage waveform at a substrate during plasma processing
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
CN109243955B (zh) * 2017-07-11 2020-10-13 北京北方华创微电子装备有限公司 等离子体起辉状态监测方法及监测装置和半导体处理设备
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
JP7061889B2 (ja) * 2018-02-15 2022-05-02 東京エレクトロン株式会社 被処理体の載置装置及び処理装置
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
JP7145041B2 (ja) * 2018-11-08 2022-09-30 東京エレクトロン株式会社 基板支持器、プラズマ処理装置、及びフォーカスリング
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
JP7174687B2 (ja) * 2019-11-29 2022-11-17 東京エレクトロン株式会社 プラズマ処理装置及びエッチング方法
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
JP2020155489A (ja) * 2019-03-18 2020-09-24 キオクシア株式会社 半導体製造装置および半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW421824B (en) * 1998-06-26 2001-02-11 Matsushita Electric Ind Co Ltd Etching method, cleaning method, plasma processing apparatus, and matching circuit
US6780278B2 (en) * 2000-06-28 2004-08-24 Kabushiki Kaisha Toshiba Plasma processing apparatus with reduced parasitic capacity and loss in RF power
US7115169B2 (en) * 2000-06-07 2006-10-03 Tegal Corporation Replaceable shielding apparatus
US20080116924A1 (en) * 2006-11-20 2008-05-22 Gerard Blaney Device under test pogo pin type contact element

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6036877A (en) * 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US5557215A (en) 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus
US6042686A (en) * 1995-06-30 2000-03-28 Lam Research Corporation Power segmented electrode
US5748434A (en) * 1996-06-14 1998-05-05 Applied Materials, Inc. Shield for an electrostatic chuck
US5737177A (en) 1996-10-17 1998-04-07 Applied Materials, Inc. Apparatus and method for actively controlling the DC potential of a cathode pedestal
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US5942889A (en) 1997-06-20 1999-08-24 Applied Materials, Inc. Capacitive probe for in situ measurement of wafer DC bias voltage
US6215640B1 (en) * 1998-12-10 2001-04-10 Applied Materials, Inc. Apparatus and method for actively controlling surface potential of an electrostatic chuck
US6409896B2 (en) 1999-12-01 2002-06-25 Applied Materials, Inc. Method and apparatus for semiconductor wafer process monitoring
JP3659180B2 (ja) * 2000-03-24 2005-06-15 株式会社日立製作所 半導体製造装置および処理方法、およびウエハ電位プローブ
TW483037B (en) 2000-03-24 2002-04-11 Hitachi Ltd Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe
TW478026B (en) * 2000-08-25 2002-03-01 Hitachi Ltd Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield
US6475336B1 (en) 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
JP4378887B2 (ja) 2001-03-07 2009-12-09 パナソニック株式会社 プラズマ処理装置およびプラズマ処理方法
KR100488412B1 (ko) * 2001-06-13 2005-05-11 가부시키가이샤 덴소 내장된 전기소자를 갖는 인쇄 배선 기판 및 그 제조 방법
US6856147B2 (en) * 2003-01-15 2005-02-15 Daimlerchrysler Corporation Resistive load measurement system
CN100418187C (zh) * 2003-02-07 2008-09-10 东京毅力科创株式会社 等离子体处理装置、环形部件和等离子体处理方法
US7064812B2 (en) * 2003-08-19 2006-06-20 Tokyo Electron Limited Method of using a sensor gas to determine erosion level of consumable system components
US7658816B2 (en) * 2003-09-05 2010-02-09 Tokyo Electron Limited Focus ring and plasma processing apparatus
JP2005310945A (ja) 2004-04-20 2005-11-04 Hitachi High-Technologies Corp 半導体製造装置およびウェハの静電吸着方法・除電方法
JP4920991B2 (ja) 2006-02-22 2012-04-18 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US7837827B2 (en) 2007-06-28 2010-11-23 Lam Research Corporation Edge ring arrangements for substrate processing
KR20090049187A (ko) 2007-11-13 2009-05-18 주식회사 동부하이텍 베벨 식각 장치
JP5281309B2 (ja) * 2008-03-28 2013-09-04 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体
US20100018648A1 (en) * 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW421824B (en) * 1998-06-26 2001-02-11 Matsushita Electric Ind Co Ltd Etching method, cleaning method, plasma processing apparatus, and matching circuit
US7115169B2 (en) * 2000-06-07 2006-10-03 Tegal Corporation Replaceable shielding apparatus
US6780278B2 (en) * 2000-06-28 2004-08-24 Kabushiki Kaisha Toshiba Plasma processing apparatus with reduced parasitic capacity and loss in RF power
US20080116924A1 (en) * 2006-11-20 2008-05-22 Gerard Blaney Device under test pogo pin type contact element

Also Published As

Publication number Publication date
SG178285A1 (en) 2012-03-29
JP2013502718A (ja) 2013-01-24
KR20120060827A (ko) 2012-06-12
TW201133678A (en) 2011-10-01
US20110043228A1 (en) 2011-02-24
US9299539B2 (en) 2016-03-29
SG10201404395UA (en) 2014-10-30
CN102484062A (zh) 2012-05-30
WO2011021160A2 (en) 2011-02-24
CN102484062B (zh) 2015-03-04
JP5661113B2 (ja) 2015-01-28
WO2011021160A3 (en) 2011-08-11

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