CN102484062B - 测量晶片偏压的方法与装置 - Google Patents
测量晶片偏压的方法与装置 Download PDFInfo
- Publication number
- CN102484062B CN102484062B CN201080036933.6A CN201080036933A CN102484062B CN 102484062 B CN102484062 B CN 102484062B CN 201080036933 A CN201080036933 A CN 201080036933A CN 102484062 B CN102484062 B CN 102484062B
- Authority
- CN
- China
- Prior art keywords
- wafer
- contact
- edge ring
- plasma
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Drying Of Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/545,293 | 2009-08-21 | ||
| US12/545,293 US9299539B2 (en) | 2009-08-21 | 2009-08-21 | Method and apparatus for measuring wafer bias potential |
| PCT/IB2010/053735 WO2011021160A2 (en) | 2009-08-21 | 2010-08-18 | Method and apparatus for measuring wafer bias potential |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102484062A CN102484062A (zh) | 2012-05-30 |
| CN102484062B true CN102484062B (zh) | 2015-03-04 |
Family
ID=43604835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080036933.6A Active CN102484062B (zh) | 2009-08-21 | 2010-08-18 | 测量晶片偏压的方法与装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9299539B2 (enExample) |
| JP (1) | JP5661113B2 (enExample) |
| KR (1) | KR20120060827A (enExample) |
| CN (1) | CN102484062B (enExample) |
| SG (2) | SG178285A1 (enExample) |
| TW (1) | TWI562259B (enExample) |
| WO (1) | WO2011021160A2 (enExample) |
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| JP2013511814A (ja) * | 2009-11-19 | 2013-04-04 | ラム リサーチ コーポレーション | プラズマ処理システムを制御するための方法および装置 |
| US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| EP3143160B1 (en) | 2014-05-13 | 2019-11-06 | Myriad Genetics, Inc. | Gene signatures for cancer prognosis |
| US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US9728437B2 (en) * | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
| US20160225652A1 (en) * | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US12456611B2 (en) * | 2016-06-13 | 2025-10-28 | Applied Materials, Inc. | Systems and methods for controlling a voltage waveform at a substrate during plasma processing |
| US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| JP7176860B6 (ja) | 2017-05-17 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 前駆体の流れを改善する半導体処理チャンバ |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
| US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
| CN109243955B (zh) * | 2017-07-11 | 2020-10-13 | 北京北方华创微电子装备有限公司 | 等离子体起辉状态监测方法及监测装置和半导体处理设备 |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
| US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
| JP7061889B2 (ja) * | 2018-02-15 | 2022-05-02 | 東京エレクトロン株式会社 | 被処理体の載置装置及び処理装置 |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
| US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
| US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
| US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
| US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
| US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| JP7145041B2 (ja) * | 2018-11-08 | 2022-09-30 | 東京エレクトロン株式会社 | 基板支持器、プラズマ処理装置、及びフォーカスリング |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
| JP7174687B2 (ja) * | 2019-11-29 | 2022-11-17 | 東京エレクトロン株式会社 | プラズマ処理装置及びエッチング方法 |
| US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
| JP2020155489A (ja) * | 2019-03-18 | 2020-09-24 | キオクシア株式会社 | 半導体製造装置および半導体装置の製造方法 |
| WO2024258662A1 (en) * | 2023-06-15 | 2024-12-19 | Applied Materials, Inc. | Grounding device for thin film formation using plasma |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020007914A1 (en) * | 1998-06-26 | 2002-01-24 | Matsushita Electric Industrial Co., Ltd. | Etching and cleaning apparatus |
| US20020042204A1 (en) * | 2000-06-28 | 2002-04-11 | Hisataka Hayashi | Plasma processing apparatus with reduced parasitic capacity and loss in RF power |
| US6856147B2 (en) * | 2003-01-15 | 2005-02-15 | Daimlerchrysler Corporation | Resistive load measurement system |
| CN100418187C (zh) * | 2003-02-07 | 2008-09-10 | 东京毅力科创株式会社 | 等离子体处理装置、环形部件和等离子体处理方法 |
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| US6036877A (en) * | 1991-06-27 | 2000-03-14 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US5557215A (en) | 1993-05-12 | 1996-09-17 | Tokyo Electron Limited | Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus |
| US6042686A (en) * | 1995-06-30 | 2000-03-28 | Lam Research Corporation | Power segmented electrode |
| US5748434A (en) * | 1996-06-14 | 1998-05-05 | Applied Materials, Inc. | Shield for an electrostatic chuck |
| US5737177A (en) | 1996-10-17 | 1998-04-07 | Applied Materials, Inc. | Apparatus and method for actively controlling the DC potential of a cathode pedestal |
| US6284093B1 (en) * | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
| US5942889A (en) | 1997-06-20 | 1999-08-24 | Applied Materials, Inc. | Capacitive probe for in situ measurement of wafer DC bias voltage |
| US6215640B1 (en) * | 1998-12-10 | 2001-04-10 | Applied Materials, Inc. | Apparatus and method for actively controlling surface potential of an electrostatic chuck |
| US6409896B2 (en) | 1999-12-01 | 2002-06-25 | Applied Materials, Inc. | Method and apparatus for semiconductor wafer process monitoring |
| TW483037B (en) | 2000-03-24 | 2002-04-11 | Hitachi Ltd | Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe |
| JP3659180B2 (ja) * | 2000-03-24 | 2005-06-15 | 株式会社日立製作所 | 半導体製造装置および処理方法、およびウエハ電位プローブ |
| US6440219B1 (en) * | 2000-06-07 | 2002-08-27 | Simplus Systems Corporation | Replaceable shielding apparatus |
| TW478026B (en) * | 2000-08-25 | 2002-03-01 | Hitachi Ltd | Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield |
| US6475336B1 (en) | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
| JP4378887B2 (ja) | 2001-03-07 | 2009-12-09 | パナソニック株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| KR100488412B1 (ko) * | 2001-06-13 | 2005-05-11 | 가부시키가이샤 덴소 | 내장된 전기소자를 갖는 인쇄 배선 기판 및 그 제조 방법 |
| US7064812B2 (en) * | 2003-08-19 | 2006-06-20 | Tokyo Electron Limited | Method of using a sensor gas to determine erosion level of consumable system components |
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| JP2005310945A (ja) | 2004-04-20 | 2005-11-04 | Hitachi High-Technologies Corp | 半導体製造装置およびウェハの静電吸着方法・除電方法 |
| JP4920991B2 (ja) | 2006-02-22 | 2012-04-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| US7728613B2 (en) * | 2006-11-20 | 2010-06-01 | Analog Devices, Inc. | Device under test pogo pin type contact element |
| US7837827B2 (en) | 2007-06-28 | 2010-11-23 | Lam Research Corporation | Edge ring arrangements for substrate processing |
| KR20090049187A (ko) | 2007-11-13 | 2009-05-18 | 주식회사 동부하이텍 | 베벨 식각 장치 |
| JP5281309B2 (ja) * | 2008-03-28 | 2013-09-04 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体 |
| US20100018648A1 (en) * | 2008-07-23 | 2010-01-28 | Applied Marterials, Inc. | Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring |
-
2009
- 2009-08-21 US US12/545,293 patent/US9299539B2/en active Active
-
2010
- 2010-08-18 SG SG2012008272A patent/SG178285A1/en unknown
- 2010-08-18 CN CN201080036933.6A patent/CN102484062B/zh active Active
- 2010-08-18 WO PCT/IB2010/053735 patent/WO2011021160A2/en not_active Ceased
- 2010-08-18 JP JP2012525242A patent/JP5661113B2/ja not_active Expired - Fee Related
- 2010-08-18 SG SG10201404395UA patent/SG10201404395UA/en unknown
- 2010-08-18 KR KR1020127004327A patent/KR20120060827A/ko not_active Abandoned
- 2010-08-20 TW TW099127916A patent/TWI562259B/zh not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020007914A1 (en) * | 1998-06-26 | 2002-01-24 | Matsushita Electric Industrial Co., Ltd. | Etching and cleaning apparatus |
| US20020042204A1 (en) * | 2000-06-28 | 2002-04-11 | Hisataka Hayashi | Plasma processing apparatus with reduced parasitic capacity and loss in RF power |
| US6856147B2 (en) * | 2003-01-15 | 2005-02-15 | Daimlerchrysler Corporation | Resistive load measurement system |
| CN100418187C (zh) * | 2003-02-07 | 2008-09-10 | 东京毅力科创株式会社 | 等离子体处理装置、环形部件和等离子体处理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102484062A (zh) | 2012-05-30 |
| SG10201404395UA (en) | 2014-10-30 |
| KR20120060827A (ko) | 2012-06-12 |
| TWI562259B (en) | 2016-12-11 |
| WO2011021160A2 (en) | 2011-02-24 |
| SG178285A1 (en) | 2012-03-29 |
| JP5661113B2 (ja) | 2015-01-28 |
| JP2013502718A (ja) | 2013-01-24 |
| WO2011021160A3 (en) | 2011-08-11 |
| US20110043228A1 (en) | 2011-02-24 |
| TW201133678A (en) | 2011-10-01 |
| US9299539B2 (en) | 2016-03-29 |
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| C14 | Grant of patent or utility model | ||
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