SG178285A1 - Method and apparatus for measuring wafer bias potential - Google Patents
Method and apparatus for measuring wafer bias potential Download PDFInfo
- Publication number
- SG178285A1 SG178285A1 SG2012008272A SG2012008272A SG178285A1 SG 178285 A1 SG178285 A1 SG 178285A1 SG 2012008272 A SG2012008272 A SG 2012008272A SG 2012008272 A SG2012008272 A SG 2012008272A SG 178285 A1 SG178285 A1 SG 178285A1
- Authority
- SG
- Singapore
- Prior art keywords
- wafer
- contact
- potential
- edge ring
- hot edge
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 17
- 238000005513 bias potential Methods 0.000 title description 11
- 238000012545 processing Methods 0.000 claims abstract description 62
- 230000008878 coupling Effects 0.000 claims description 28
- 238000010168 coupling process Methods 0.000 claims description 28
- 238000005859 coupling reaction Methods 0.000 claims description 28
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 135
- 239000000523 sample Substances 0.000 description 37
- 239000000919 ceramic Substances 0.000 description 26
- 150000002500 ions Chemical class 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Drying Of Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/545,293 US9299539B2 (en) | 2009-08-21 | 2009-08-21 | Method and apparatus for measuring wafer bias potential |
| PCT/IB2010/053735 WO2011021160A2 (en) | 2009-08-21 | 2010-08-18 | Method and apparatus for measuring wafer bias potential |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG178285A1 true SG178285A1 (en) | 2012-03-29 |
Family
ID=43604835
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2012008272A SG178285A1 (en) | 2009-08-21 | 2010-08-18 | Method and apparatus for measuring wafer bias potential |
| SG10201404395UA SG10201404395UA (en) | 2009-08-21 | 2010-08-18 | Method and apparatus for measuring wafer bias potential |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201404395UA SG10201404395UA (en) | 2009-08-21 | 2010-08-18 | Method and apparatus for measuring wafer bias potential |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9299539B2 (enExample) |
| JP (1) | JP5661113B2 (enExample) |
| KR (1) | KR20120060827A (enExample) |
| CN (1) | CN102484062B (enExample) |
| SG (2) | SG178285A1 (enExample) |
| TW (1) | TWI562259B (enExample) |
| WO (1) | WO2011021160A2 (enExample) |
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| JP2013511814A (ja) * | 2009-11-19 | 2013-04-04 | ラム リサーチ コーポレーション | プラズマ処理システムを制御するための方法および装置 |
| US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
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| US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US9728437B2 (en) * | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
| US20160225652A1 (en) * | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US12456611B2 (en) * | 2016-06-13 | 2025-10-28 | Applied Materials, Inc. | Systems and methods for controlling a voltage waveform at a substrate during plasma processing |
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| US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| JP7176860B6 (ja) | 2017-05-17 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 前駆体の流れを改善する半導体処理チャンバ |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
| US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
| CN109243955B (zh) * | 2017-07-11 | 2020-10-13 | 北京北方华创微电子装备有限公司 | 等离子体起辉状态监测方法及监测装置和半导体处理设备 |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
| US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
| JP7061889B2 (ja) * | 2018-02-15 | 2022-05-02 | 東京エレクトロン株式会社 | 被処理体の載置装置及び処理装置 |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
| US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
| US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
| US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
| US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
| US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| JP7145041B2 (ja) * | 2018-11-08 | 2022-09-30 | 東京エレクトロン株式会社 | 基板支持器、プラズマ処理装置、及びフォーカスリング |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
| JP7174687B2 (ja) * | 2019-11-29 | 2022-11-17 | 東京エレクトロン株式会社 | プラズマ処理装置及びエッチング方法 |
| US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
| JP2020155489A (ja) * | 2019-03-18 | 2020-09-24 | キオクシア株式会社 | 半導体製造装置および半導体装置の製造方法 |
| WO2024258662A1 (en) * | 2023-06-15 | 2024-12-19 | Applied Materials, Inc. | Grounding device for thin film formation using plasma |
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| US7064812B2 (en) * | 2003-08-19 | 2006-06-20 | Tokyo Electron Limited | Method of using a sensor gas to determine erosion level of consumable system components |
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| JP2005310945A (ja) | 2004-04-20 | 2005-11-04 | Hitachi High-Technologies Corp | 半導体製造装置およびウェハの静電吸着方法・除電方法 |
| JP4920991B2 (ja) | 2006-02-22 | 2012-04-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
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| US7837827B2 (en) | 2007-06-28 | 2010-11-23 | Lam Research Corporation | Edge ring arrangements for substrate processing |
| KR20090049187A (ko) | 2007-11-13 | 2009-05-18 | 주식회사 동부하이텍 | 베벨 식각 장치 |
| JP5281309B2 (ja) * | 2008-03-28 | 2013-09-04 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体 |
| US20100018648A1 (en) * | 2008-07-23 | 2010-01-28 | Applied Marterials, Inc. | Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring |
-
2009
- 2009-08-21 US US12/545,293 patent/US9299539B2/en active Active
-
2010
- 2010-08-18 SG SG2012008272A patent/SG178285A1/en unknown
- 2010-08-18 CN CN201080036933.6A patent/CN102484062B/zh active Active
- 2010-08-18 WO PCT/IB2010/053735 patent/WO2011021160A2/en not_active Ceased
- 2010-08-18 JP JP2012525242A patent/JP5661113B2/ja not_active Expired - Fee Related
- 2010-08-18 SG SG10201404395UA patent/SG10201404395UA/en unknown
- 2010-08-18 KR KR1020127004327A patent/KR20120060827A/ko not_active Abandoned
- 2010-08-20 TW TW099127916A patent/TWI562259B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN102484062A (zh) | 2012-05-30 |
| SG10201404395UA (en) | 2014-10-30 |
| KR20120060827A (ko) | 2012-06-12 |
| TWI562259B (en) | 2016-12-11 |
| WO2011021160A2 (en) | 2011-02-24 |
| JP5661113B2 (ja) | 2015-01-28 |
| JP2013502718A (ja) | 2013-01-24 |
| WO2011021160A3 (en) | 2011-08-11 |
| US20110043228A1 (en) | 2011-02-24 |
| TW201133678A (en) | 2011-10-01 |
| CN102484062B (zh) | 2015-03-04 |
| US9299539B2 (en) | 2016-03-29 |
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