KR20120060827A - 웨이퍼 바이어스 전위를 측정하기 위한 방법 및 장치 - Google Patents

웨이퍼 바이어스 전위를 측정하기 위한 방법 및 장치 Download PDF

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Publication number
KR20120060827A
KR20120060827A KR1020127004327A KR20127004327A KR20120060827A KR 20120060827 A KR20120060827 A KR 20120060827A KR 1020127004327 A KR1020127004327 A KR 1020127004327A KR 20127004327 A KR20127004327 A KR 20127004327A KR 20120060827 A KR20120060827 A KR 20120060827A
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KR
South Korea
Prior art keywords
wafer
contact
potential
edge ring
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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KR1020127004327A
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English (en)
Korean (ko)
Inventor
콘스탄틴 마크라체프
존 발코어
Original Assignee
램 리써치 코포레이션
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Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20120060827A publication Critical patent/KR20120060827A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Drying Of Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Plasma Technology (AREA)
KR1020127004327A 2009-08-21 2010-08-18 웨이퍼 바이어스 전위를 측정하기 위한 방법 및 장치 Abandoned KR20120060827A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/545,293 2009-08-21
US12/545,293 US9299539B2 (en) 2009-08-21 2009-08-21 Method and apparatus for measuring wafer bias potential
PCT/IB2010/053735 WO2011021160A2 (en) 2009-08-21 2010-08-18 Method and apparatus for measuring wafer bias potential

Publications (1)

Publication Number Publication Date
KR20120060827A true KR20120060827A (ko) 2012-06-12

Family

ID=43604835

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127004327A Abandoned KR20120060827A (ko) 2009-08-21 2010-08-18 웨이퍼 바이어스 전위를 측정하기 위한 방법 및 장치

Country Status (7)

Country Link
US (1) US9299539B2 (enExample)
JP (1) JP5661113B2 (enExample)
KR (1) KR20120060827A (enExample)
CN (1) CN102484062B (enExample)
SG (2) SG178285A1 (enExample)
TW (1) TWI562259B (enExample)
WO (1) WO2011021160A2 (enExample)

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US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
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US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
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Also Published As

Publication number Publication date
CN102484062A (zh) 2012-05-30
SG10201404395UA (en) 2014-10-30
TWI562259B (en) 2016-12-11
WO2011021160A2 (en) 2011-02-24
SG178285A1 (en) 2012-03-29
JP5661113B2 (ja) 2015-01-28
JP2013502718A (ja) 2013-01-24
WO2011021160A3 (en) 2011-08-11
US20110043228A1 (en) 2011-02-24
TW201133678A (en) 2011-10-01
CN102484062B (zh) 2015-03-04
US9299539B2 (en) 2016-03-29

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