JP5830176B2 - 省電力混合電圧不揮発性メモリ集積回路 - Google Patents
省電力混合電圧不揮発性メモリ集積回路 Download PDFInfo
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- JP5830176B2 JP5830176B2 JP2014539966A JP2014539966A JP5830176B2 JP 5830176 B2 JP5830176 B2 JP 5830176B2 JP 2014539966 A JP2014539966 A JP 2014539966A JP 2014539966 A JP2014539966 A JP 2014539966A JP 5830176 B2 JP5830176 B2 JP 5830176B2
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- circuit
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Description
20 マイクロコントローラ
30 混合IP
100 フラッシュメモリ
Claims (9)
- 第1の電圧を受け取るための第1のダイパッドと、
前記第1の電圧よりも低い第2の電圧を受け取るための第2のダイパッドと、
前記第1の電圧で動作可能な第1の回路と、
前記第2の電圧で動作可能で前記第2のダイパッドに接続された第2の回路と、
前記第2のダイパッドからの電流フローを検出するための回路と、
前記第1の電圧を前記第2の電圧に変換するための電圧調整器と、
を備えた集積回路ダイであって、
前記第2のダイパッドからの電流フローを検出するための前記回路は、前記電流フローの検出に応答して前記電圧調整器をアクティブにすることを特徴とする集積回路ダイ。 - 前記第2の回路は、不揮発性メモリセルアレイであり、前記第1の回路は、前記メモリセルアレイの周辺回路である、請求項1に記載の集積回路ダイ。
- 前記第1の回路は、前記不揮発性メモリセルアレイ用のマイクロコントローラ回路を含む、請求項2に記載の集積回路ダイ。
- 前記第1の回路は、アドレス信号を受け取り、デコードしたアドレス信号を前記不揮発性メモリセルアレイに供給するためのアドレスデコーダ回路を含む、請求項2に記載の集積回路ダイ。
- 前記第1の回路は、不揮発性メモリデバイス用のセンスアンプ回路の第1の部分であり、前記第2の回路は、前記不揮発性メモリデバイス用のセンスアンプの第2の部分である、請求項1に記載の集積回路ダイ。
- メモリフラッシュアレイと、
第1のダイパッドと、
前記第1のダイパッドに接続された第1の回路と、
第2のダイパッドと、
前記第2のダイパッドに接続された第2の回路と、
コンフィギュレーションビットを提供して、パワーアップ中第1の電圧しきい値を超える第1の電圧供給源からの電圧に応答する前記第1の回路、パワーアップ中第2の電圧を超える第2の電圧供給源に応答する前記第2の回路、及び前記第1のダイパッドと前記第2のダイパッドとの接続、を構成するための電源シーケンスコントローラと、
を備える集積回路フラッシュメモリシステム。 - 前記コンフィギュレーションビットが電源シーケンスから提供されるように制御するための電源シーケンスコントローラを更に備える、請求項6に記載のシステム。
- 前記電源シーケンスは、並行のパターンチェックを含む、請求項7に記載のシステム。
- 前記コンフィギュレーションビットは、消去、プログラム、読み出し、スタンバイ、及びディープパワーダウンに関する種々の省電力モードを、前記第1の回路及び前記第2の回路用のハード及びソフト調整電圧レベルで制御する、請求項6に記載のシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/286,969 | 2011-11-01 | ||
US13/286,969 US8705282B2 (en) | 2011-11-01 | 2011-11-01 | Mixed voltage non-volatile memory integrated circuit with power saving |
PCT/US2012/059808 WO2013066592A2 (en) | 2011-11-01 | 2012-10-11 | A mixed voltage non-volatile memory integrated circuit with power saving |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014532953A JP2014532953A (ja) | 2014-12-08 |
JP5830176B2 true JP5830176B2 (ja) | 2015-12-09 |
Family
ID=48172294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014539966A Active JP5830176B2 (ja) | 2011-11-01 | 2012-10-11 | 省電力混合電圧不揮発性メモリ集積回路 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8705282B2 (ja) |
EP (1) | EP2774152B1 (ja) |
JP (1) | JP5830176B2 (ja) |
KR (1) | KR101485308B1 (ja) |
CN (3) | CN104160447B (ja) |
TW (2) | TWI497276B (ja) |
WO (1) | WO2013066592A2 (ja) |
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JP7259130B2 (ja) * | 2020-08-06 | 2023-04-17 | 長江存儲科技有限責任公司 | 3次元メモリのためのマルチダイピーク電力管理 |
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2011
- 2011-11-01 US US13/286,969 patent/US8705282B2/en active Active
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2012
- 2012-10-11 KR KR1020147014673A patent/KR101485308B1/ko active IP Right Grant
- 2012-10-11 CN CN201280065657.5A patent/CN104160447B/zh active Active
- 2012-10-11 WO PCT/US2012/059808 patent/WO2013066592A2/en active Application Filing
- 2012-10-11 EP EP12846107.6A patent/EP2774152B1/en active Active
- 2012-10-11 CN CN201610844224.XA patent/CN107093441B/zh active Active
- 2012-10-11 JP JP2014539966A patent/JP5830176B2/ja active Active
- 2012-10-11 CN CN201510008451.4A patent/CN104681087B/zh active Active
- 2012-10-19 TW TW101138697A patent/TWI497276B/zh active
- 2012-10-19 TW TW104122573A patent/TWI541640B/zh active
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2014
- 2014-04-21 US US14/257,335 patent/US9378838B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2774152B1 (en) | 2019-07-31 |
TWI497276B (zh) | 2015-08-21 |
TW201614419A (en) | 2016-04-16 |
CN104160447A (zh) | 2014-11-19 |
US9378838B2 (en) | 2016-06-28 |
US8705282B2 (en) | 2014-04-22 |
TWI541640B (zh) | 2016-07-11 |
CN104160447B (zh) | 2016-10-12 |
CN107093441A (zh) | 2017-08-25 |
JP2014532953A (ja) | 2014-12-08 |
CN104681087B (zh) | 2018-09-18 |
KR101485308B1 (ko) | 2015-01-21 |
TW201321962A (zh) | 2013-06-01 |
CN104681087A (zh) | 2015-06-03 |
US20130107632A1 (en) | 2013-05-02 |
EP2774152A4 (en) | 2015-07-08 |
EP2774152A2 (en) | 2014-09-10 |
US20140226409A1 (en) | 2014-08-14 |
KR20140087048A (ko) | 2014-07-08 |
CN107093441B (zh) | 2021-02-09 |
WO2013066592A3 (en) | 2014-05-22 |
WO2013066592A2 (en) | 2013-05-10 |
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