JP5826178B2 - 電極用ガラス組成物、及びそれを用いた電極用ペースト、並びにそれを適用した電子部品 - Google Patents
電極用ガラス組成物、及びそれを用いた電極用ペースト、並びにそれを適用した電子部品 Download PDFInfo
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- JP5826178B2 JP5826178B2 JP2012528656A JP2012528656A JP5826178B2 JP 5826178 B2 JP5826178 B2 JP 5826178B2 JP 2012528656 A JP2012528656 A JP 2012528656A JP 2012528656 A JP2012528656 A JP 2012528656A JP 5826178 B2 JP5826178 B2 JP 5826178B2
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- 239000011521 glass Substances 0.000 title claims description 373
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- 239000002003 electrode paste Substances 0.000 title claims description 95
- 239000002245 particle Substances 0.000 claims description 156
- 239000010949 copper Substances 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 35
- 239000011230 binding agent Substances 0.000 claims description 33
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- 229920005989 resin Polymers 0.000 claims description 33
- 239000002904 solvent Substances 0.000 claims description 33
- 239000002923 metal particle Substances 0.000 claims description 32
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 28
- 229910052720 vanadium Inorganic materials 0.000 claims description 25
- 229910052723 transition metal Inorganic materials 0.000 claims description 23
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- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical group CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 13
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- 239000002184 metal Substances 0.000 claims description 11
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- 239000011572 manganese Substances 0.000 claims description 9
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052748 manganese Inorganic materials 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
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- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 claims description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 claims description 4
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- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
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- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
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- 101500027749 Mus musculus Serpinin Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
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- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 1
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/08—Frit compositions, i.e. in a powdered or comminuted form containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Conductive Materials (AREA)
- Glass Compositions (AREA)
- Non-Insulated Conductors (AREA)
- Gas-Filled Discharge Tubes (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (23)
- 金属とガラス組成物とを含む電極に用いられる材料であって、銀、リン及び酸素を含み、かつ、実質的に鉛を含まず、テルル又はバナジウムを含み、バリウム、タングステン、モリブデン、鉄、マンガン及び亜鉛のうち一種以上を含むことを特徴とする電極用ガラス組成物。
- 酸化物換算で、Ag2Oが5〜60重量%、P2O5が5〜50重量%、V2O5が0〜50重量%、TeO2が0〜30重量%、その他の酸化物が0〜40重量%であり、さらに、Ag2OとV2O5との合計が30〜86重量%、P2O5とTeO2との合計が14〜50重量%であることを特徴とする請求項1記載の電極用ガラス組成物。
- 前記その他の酸化物は、BaO、WO3、MoO3、Fe2O3、MnO2及びZnOからなる群から選択される一種以上であることを特徴とする請求項2記載の電極用ガラス組成物。
- 酸化物換算で、Ag2OとV2O5との合計が40〜70重量%であって、Ag2Oが10〜50重量%であり、かつ、V2O5が20〜50重量%であり、P2O5とTeO2との合計が25〜50重量%であって、P2O5が10〜30重量%であり、かつ、TeO2が0〜30重量%であり、BaOとWO3とFe2O3とZnOとの合計が0〜30重量%であって、BaOが0〜20重量%であり、かつ、WO3が0〜10重量%であり、かつ、Fe2O3が0〜10重量%であり、かつ、ZnOが0〜15重量%であることを特徴とする請求項1記載の電極用ガラス組成物。
- 転移点が392℃以下であることを特徴とする請求項1記載の電極用ガラス組成物。
- 前記転移点が310℃以下であることを特徴とする請求項5記載の電極用ガラス組成物。
- 銀、アルミニウム及び銅のうちいずれか一種以上の金属元素を含む金属粒子と、請求項1記載の電極用ガラス組成物の粒子と、樹脂バインダーと、溶剤とを含むことを特徴とする電極用ペースト。
- 前記金属粒子100重量部と、前記電極用ガラス組成物0.2〜20重量部とを含むことを特徴とする請求項7記載の電極用ペースト。
- 前記金属粒子は、銀を主成分とし、前記金属粒子100重量部と、前記電極用ガラス組成物3〜15重量部とを含むことを特徴とする請求項7記載の電極用ペースト。
- 前記金属粒子は、アルミニウムを主成分とし、前記金属粒子100重量部と、前記電極用ガラス組成物0.2〜20重量部とを含むことを特徴とする請求項7記載の電極用ペースト。
- 前記金属粒子は、銅を主成分とし、前記金属粒子100重量部と、前記電極用ガラス組成物3〜15重量部とを含むことを特徴とする請求項7記載の電極用ペースト。
- 前記樹脂バインダーは、エチルセルロース又はニトロセルロースであり、前記溶剤は、ブチルカルビトールアセテート又はα-テルピネオールであることを特徴とする請求項7記載の電極用ペースト。
- 請求項7記載の電極用ペーストを用いて形成した電極を含むことを特徴とする電子部品。
- 前記電極に含まれる前記電極用ガラス組成物は、0.1〜30体積%であることを特徴とする請求項13記載の電子部品。
- 前記電極は、銀を金属導体の主成分とするものであり、前記電極に含まれる前記電極用ガラス組成物は、5〜30体積%であることを特徴とする請求項14記載の電子部品。
- 前記電極は、アルミニウムを金属導体の主成分とするものであり、前記電極に含まれる前記電極用ガラス組成物は、0.1〜15体積%であることを特徴とする請求項14記載の電子部品。
- 前記電極は、銅を金属導体の主成分とするものであり、前記電極に含まれる前記電極用ガラス組成物は、5〜20体積%であることを特徴とする請求項14記載の電子部品。
- 太陽電池素子、画像表示デバイス、積層コンデンサー又は多層回路基板であることを特徴とする請求項13記載の電子部品。
- シリコン基板を用いた太陽電池素子であることを特徴とする請求項13記載の電子部品。
- 前記集電電極に含まれる前記導電性ガラス組成物が0.1〜5体積%であることを特徴とする請求項20記載の太陽電池素子。
- 前記出力取出し電極は、請求項7記載の電極用ペーストを用いて形成されたものであることを特徴とする請求項20記載の太陽電池素子。
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PCT/JP2011/067881 WO2012020694A1 (ja) | 2010-08-11 | 2011-08-04 | 電極用ガラス組成物、及びそれを用いた電極用ペースト、並びにそれを適用した電子部品 |
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JPWO2012020694A1 (ja) | 2013-10-28 |
CN103052605B (zh) | 2016-01-20 |
CN103052605A (zh) | 2013-04-17 |
WO2012020694A1 (ja) | 2012-02-16 |
KR101414091B1 (ko) | 2014-07-02 |
TWI448444B (zh) | 2014-08-11 |
KR20130041076A (ko) | 2013-04-24 |
TW201213268A (en) | 2012-04-01 |
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