JP5825744B2 - パワー絶縁ゲート型電界効果トランジスタ - Google Patents

パワー絶縁ゲート型電界効果トランジスタ Download PDF

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Publication number
JP5825744B2
JP5825744B2 JP2011201446A JP2011201446A JP5825744B2 JP 5825744 B2 JP5825744 B2 JP 5825744B2 JP 2011201446 A JP2011201446 A JP 2011201446A JP 2011201446 A JP2011201446 A JP 2011201446A JP 5825744 B2 JP5825744 B2 JP 5825744B2
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Prior art keywords
semiconductor layer
electrode
oxide semiconductor
oxide
gate electrode
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Expired - Fee Related
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JP2011201446A
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Japanese (ja)
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JP2013062461A5 (enExample
JP2013062461A (ja
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竹村　保彦
保彦 竹村
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2011201446A priority Critical patent/JP5825744B2/ja
Priority to US13/608,187 priority patent/US8921849B2/en
Publication of JP2013062461A publication Critical patent/JP2013062461A/ja
Publication of JP2013062461A5 publication Critical patent/JP2013062461A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2011201446A 2011-09-15 2011-09-15 パワー絶縁ゲート型電界効果トランジスタ Expired - Fee Related JP5825744B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011201446A JP5825744B2 (ja) 2011-09-15 2011-09-15 パワー絶縁ゲート型電界効果トランジスタ
US13/608,187 US8921849B2 (en) 2011-09-15 2012-09-10 Insulated-gate field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011201446A JP5825744B2 (ja) 2011-09-15 2011-09-15 パワー絶縁ゲート型電界効果トランジスタ

Publications (3)

Publication Number Publication Date
JP2013062461A JP2013062461A (ja) 2013-04-04
JP2013062461A5 JP2013062461A5 (enExample) 2014-10-09
JP5825744B2 true JP5825744B2 (ja) 2015-12-02

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Country Link
US (1) US8921849B2 (enExample)
JP (1) JP5825744B2 (enExample)

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