JP5821828B2 - Ｓｏｉウェーハの製造方法 - Google Patents

Ｓｏｉウェーハの製造方法 Download PDF

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Publication number
JP5821828B2
JP5821828B2 JP2012255719A JP2012255719A JP5821828B2 JP 5821828 B2 JP5821828 B2 JP 5821828B2 JP 2012255719 A JP2012255719 A JP 2012255719A JP 2012255719 A JP2012255719 A JP 2012255719A JP 5821828 B2 JP5821828 B2 JP 5821828B2
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JP
Japan
Prior art keywords
wafer
oxide film
soi
bond
bond wafer
Prior art date
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Active
Application number
JP2012255719A
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English (en)
Japanese (ja)
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JP2014103329A5 (https=
JP2014103329A (ja
Inventor
阿賀　浩司
浩司 阿賀
徹 石塚
徹 石塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority to JP2012255719A priority Critical patent/JP5821828B2/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to PCT/JP2013/006072 priority patent/WO2014080563A1/ja
Priority to CN201380047666.6A priority patent/CN104620384B/zh
Priority to US14/427,151 priority patent/US9378999B2/en
Priority to EP13856571.8A priority patent/EP2924736B1/en
Priority to SG11201501873QA priority patent/SG11201501873QA/en
Priority to KR1020157005866A priority patent/KR101910100B1/ko
Publication of JP2014103329A publication Critical patent/JP2014103329A/ja
Publication of JP2014103329A5 publication Critical patent/JP2014103329A5/ja
Application granted granted Critical
Publication of JP5821828B2 publication Critical patent/JP5821828B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments

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  • Element Separation (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2012255719A 2012-11-21 2012-11-21 Ｓｏｉウェーハの製造方法 Active JP5821828B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2012255719A JP5821828B2 (ja) 2012-11-21 2012-11-21 Ｓｏｉウェーハの製造方法
CN201380047666.6A CN104620384B (zh) 2012-11-21 2013-10-11 Soi晶圆的制造方法
US14/427,151 US9378999B2 (en) 2012-11-21 2013-10-11 Method for manufacturing SOI wafer
EP13856571.8A EP2924736B1 (en) 2012-11-21 2013-10-11 Method for manufacturing soi wafer
PCT/JP2013/006072 WO2014080563A1 (ja) 2012-11-21 2013-10-11 Ｓｏｉウェーハの製造方法
SG11201501873QA SG11201501873QA (en) 2012-11-21 2013-10-11 Method for manufacturing soi wafer
KR1020157005866A KR101910100B1 (ko) 2012-11-21 2013-10-11 Soi 웨이퍼의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012255719A JP5821828B2 (ja) 2012-11-21 2012-11-21 Ｓｏｉウェーハの製造方法

Publications (3)

Publication Number Publication Date
JP2014103329A JP2014103329A (ja) 2014-06-05
JP2014103329A5 JP2014103329A5 (https=) 2015-04-30
JP5821828B2 true JP5821828B2 (ja) 2015-11-24

Family

ID=50775761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012255719A Active JP5821828B2 (ja) 2012-11-21 2012-11-21 Ｓｏｉウェーハの製造方法

Country Status (7)

Country Link
US (1) US9378999B2 (https=)
EP (1) EP2924736B1 (https=)
JP (1) JP5821828B2 (https=)
KR (1) KR101910100B1 (https=)
CN (1) CN104620384B (https=)
SG (1) SG11201501873QA (https=)
WO (1) WO2014080563A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6353814B2 (ja) * 2015-06-09 2018-07-04 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
JP6556511B2 (ja) * 2015-06-17 2019-08-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN110085549B (zh) * 2018-01-26 2021-06-04 沈阳硅基科技有限公司 一种双面注入得到soi的方法
CN110544668B (zh) 2018-05-28 2022-03-25 沈阳硅基科技有限公司 一种通过贴膜改变soi边缘stir的方法
CN109360805A (zh) * 2018-09-28 2019-02-19 沈阳硅基科技有限公司 一种图形soi硅片的制备方法
CN115188703B (zh) * 2022-05-16 2025-09-19 绍兴中芯集成电路制造股份有限公司 一种soi晶圆及制造方法
FR3146019A1 (fr) * 2023-02-16 2024-08-23 Soitec Procédé de formation d’une zone de fragisilation dans un substrat semi-conducteur

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0355822A (ja) 1989-07-25 1991-03-11 Shin Etsu Handotai Co Ltd 半導体素子形成用基板の製造方法
JPH0680624B2 (ja) * 1990-02-28 1994-10-12 信越半導体株式会社 接合ウエーハの製造方法
JP3422225B2 (ja) * 1997-07-08 2003-06-30 三菱住友シリコン株式会社 貼り合わせ半導体基板及びその製造方法
JP3500063B2 (ja) * 1998-04-23 2004-02-23 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
FR2811807B1 (fr) 2000-07-12 2003-07-04 Commissariat Energie Atomique Procede de decoupage d'un bloc de materiau et de formation d'un film mince
EP1667207B1 (en) * 2003-09-08 2019-07-17 SUMCO Corporation Bonded wafer and its manufacturing method
US20080315349A1 (en) * 2005-02-28 2008-12-25 Shin-Etsu Handotai Co., Ltd. Method for Manufacturing Bonded Wafer and Bonded Wafer
JP4398934B2 (ja) * 2005-02-28 2010-01-13 信越半導体株式会社 Ｓｏｉウエーハの製造方法
US7902039B2 (en) 2006-11-30 2011-03-08 Sumco Corporation Method for manufacturing silicon wafer
JP5233111B2 (ja) 2006-11-30 2013-07-10 株式会社Ｓｕｍｃｏ 貼り合わせｓｏｉウェーハの製造方法
JP2011187502A (ja) * 2010-03-04 2011-09-22 Seiko Epson Corp 半導体装置の製造方法
CN102986020A (zh) * 2010-06-30 2013-03-20 康宁股份有限公司 对绝缘体基材上的硅进行精整的方法

Also Published As

Publication number Publication date
SG11201501873QA (en) 2015-05-28
US20150243550A1 (en) 2015-08-27
EP2924736A1 (en) 2015-09-30
EP2924736B1 (en) 2017-08-30
KR20150087181A (ko) 2015-07-29
CN104620384B (zh) 2017-06-06
US9378999B2 (en) 2016-06-28
WO2014080563A1 (ja) 2014-05-30
EP2924736A4 (en) 2016-06-29
CN104620384A (zh) 2015-05-13
KR101910100B1 (ko) 2018-10-19
JP2014103329A (ja) 2014-06-05

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