JP5819138B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5819138B2 JP5819138B2 JP2011181492A JP2011181492A JP5819138B2 JP 5819138 B2 JP5819138 B2 JP 5819138B2 JP 2011181492 A JP2011181492 A JP 2011181492A JP 2011181492 A JP2011181492 A JP 2011181492A JP 5819138 B2 JP5819138 B2 JP 5819138B2
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- 239000004065 semiconductor Substances 0.000 title claims description 142
- 239000010408 film Substances 0.000 claims description 144
- 239000010409 thin film Substances 0.000 claims description 82
- 239000000463 material Substances 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 46
- 229910044991 metal oxide Inorganic materials 0.000 claims description 35
- 150000004706 metal oxides Chemical class 0.000 claims description 35
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 28
- 239000001301 oxygen Substances 0.000 claims description 28
- 229910052760 oxygen Inorganic materials 0.000 claims description 28
- 229910052738 indium Inorganic materials 0.000 claims description 18
- 229910052733 gallium Inorganic materials 0.000 claims description 16
- 238000007667 floating Methods 0.000 claims description 15
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 15
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 13
- 229910052718 tin Inorganic materials 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910020923 Sn-O Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 6
- 229910007541 Zn O Inorganic materials 0.000 claims 4
- 238000000034 method Methods 0.000 description 32
- 238000004519 manufacturing process Methods 0.000 description 28
- 238000010586 diagram Methods 0.000 description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229920006395 saturated elastomer Polymers 0.000 description 6
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229920003026 Acene Polymers 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical class C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 150000001454 anthracenes Chemical class 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229920000547 conjugated polymer Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 150000002964 pentacenes Chemical class 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 150000003577 thiophenes Chemical class 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910007604 Zn—Sn—O Inorganic materials 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- KBEVZHAXWGOKCP-UHFFFAOYSA-N zinc oxygen(2-) tin(4+) Chemical compound [O--].[O--].[O--].[Zn++].[Sn+4] KBEVZHAXWGOKCP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
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- Microelectronics & Electronic Packaging (AREA)
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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Description
以下、図面を参照しながら本実施の形態の半導体装置の構成と製造方法について詳細に説明する。図5〜図11は、本実施の形態の半導体装置の構成、動作原理、製造工程を示す要部等価回路図、要部平面図、要部断面図、電気特性データである。なお、図6及び図9A〜Hの要部断面図は図5BのA’−A”部に対応し、図7の要部断面図は図5BのA−A”部に対応する。
まず、本実施の形態の半導体装置の等価回路図(図5A)、平面図(図5B)、断面図(図6、図7)、別の平面図(図8)を参照しつつ、本実施の形態の半導体装置の特徴的な構成を説明する。
(0×COLS+VDD/2×C L +VDD×COLD)/(COLS+L+COLD)…(1)
ここで、Lはチャネル長を表わし、C L はチャネル容量を表わす。(1)式に従えば、例えばCOLS=COLDのとき、VFGは、VDD/2となる。
次いで、本実施の形態の半導体装置の製造工程を示す断面図(図9A〜図9H)を参照しながら、本実施の形態の半導体装置の製造工程を説明するとともに、当該半導体装置の構成をより明確にする。
以上の工程により、本実施の形態の薄膜トランジスタが略完成する。
次いで、本発明者の検討事項に基づき、本実施の形態の効果を詳細に説明する。
ここでは、TFTのチャネル層CHNに酸化インジウムガリウム亜鉛(In−Ga−Zn−O)を用い、電源電圧VDDを5Vとした場合の検討結果を例に用いて説明する。まず、従来方式である飽和負荷型インバータ(図3A、B)について説明する。
なお、これらの構造の製造方法は「製造方法説明」の欄において、図9を用いて説明したボトムゲート/トップコンタクトのチャネルエッチ構造の製造方法より容易に類推できるため、詳細の説明は省略する。
以下、図面を参照しながら本実施の形態の半導体装置の構成と製造方法について詳細に説明する。図20及び21は、本実施の形態の半導体装置の構成、動作原理を示す要部等価回路図、要部平面図、要部断面図である。なお、図21の要部断面図は、図20BのB−B’部に対応する。
本実施の形態の半導体装置の等価回路図(図20A)、平面図(図20B)、断面図(図21)を参照しつつ、本実施の形態の半導体装置の特徴的な構成について説明する。
次いで、本発明者の検討事項に基づき本実施の形態の効果を詳細に説明する。
例えば電源電圧VDDを5Vとする場合、負荷トランジスタLTFTを流れる電流とオフセット長との関係を図22に示す。縦軸が電流量であり、横軸がオフセット長である。ここでは、チャネル層CHNにIn−Ga−Zn−Oを用い、ソース側オフセットOSSとドレイン側オフセットOSDの長さが同一であるものとする。
なお、これらの構造の製造方法は「製造方法説明」の欄において、図9を用いて説明したボトムゲート/トップコンタクトのチャネルエッチ構造の製造方法より容易に類推できるため、詳細の説明は省略する。
上述の実施の形態1及び2で説明した薄膜トランジスタの適用例に制限はないが、例えば液晶表示装置などの電気光学装置に用いられるアクティブマトリクス駆動方式に対応した基板(アレイ基板)に適用することができる。
前述の実施の形態1又は実施の形態2で説明した薄膜トランジスタの適用例に制限はない。当該薄膜トランジスタは、例えばRFID(Radio Frequency Identification)タグに適用することができる。
CHN チャネル層、
DD 電源端子、
DDC データ線駆動回路、
DDE 電源端子電極、
DE ドレイン電極、
DL データ線、
DTFT 駆動トランジスタ
GDC ゲート線駆動回路、
GE ゲート電極、
GIF ゲート絶縁膜、
GL ゲート線、
GND グランド端子
GNDE グランド端子電極、
IN 入力端子、
IN1 入力端子、
IN2 入力端子、
L チャネル長、
LOG 論理回路
LRES 負荷抵抗、
LTFT 負荷トランジスタ、
MOD 変調回路、
CD1 金属膜、
CD2 金属膜、
NMOS N型電界効果トランジスタ、
OLD ドレイン側オーバラップ、
OLS ソース側オーバラップ、
OSD ドレイン側オフセット、
OSS ソース側オフセット、
OUT 出力端子、
OUTE 出力端子電極、
PAS 保護膜、
PE 画素電極、
PMOS P型電界効果トランジスタ
RCT 整流回路、
RES 抵抗体、
RW リーダライタ、
SE ソース電極、
SUB 基板、
TFT 薄膜トランジスタ、
WD 駆動トランジスタのチャネル幅、
WL 負荷トランジスタのチャネル幅
Claims (11)
- 基板上にゲート絶縁膜を介してゲート電極と半導体層が配置され、前記半導体層に接続してソース電極とドレイン電極が配置される薄膜トランジスタを2つ以上含み、
少なくとも第一の薄膜トランジスタにおいて、前記ゲート電極が電気的に浮遊状態にあり、かつ、前記半導体層は前記基板面に対して垂直方向について、前記ゲート電極と前記ソース電極により挟まれる第1の重なり領域と前記ゲート電極と前記ドレイン電極により挟まれる第2の重なり領域を有し、
少なくとも第二の薄膜トランジスタにおいて、前記ゲート電極が入力端子に接続され、かつ、前記半導体層は前記基板面に対して垂直方向について、前記ゲート電極と前記ソース電極により挟まれる第1の重なり領域と前記ゲート電極と前記ドレイン電極により挟まれる第2の重なり領域を有し、
前記第一の薄膜トランジスタの前記ドレイン電極が電源線に接続され、前記第二の薄膜トランジスタの前記ドレイン電極が前記第一の薄膜トランジスタの前記ソース電極に接続され、
前記第一の薄膜トランジスタの前記ソース電極及び前記第二の薄膜トランジスタの前記ドレイン電極が出力端子に接続され、
前記入力端子に接続される前記第二の薄膜トランジスタの前記ゲート電極の電位に応じて、電気的に浮遊状態にある前記第一の薄膜トランジスタの前記ゲート電極の電位が動的に変化する論理ゲートを含む
ことを特徴とする半導体装置。 - 前記ゲート電極が前記半導体層よりも前記基板に近い側に配置され、
前記ソース電極および前記ドレイン電極が前記半導体層よりも前記基板から遠い側に配置される
ことを特徴とする請求項1記載の半導体装置。 - 前記半導体層が金属酸化物材料よりなる
ことを特徴とする請求項1記載の半導体装置。 - 前記半導体層がIn、Ga、Zn、Sn、Alのいずれか、または複数を含有する金属酸化物材料よりなる
ことを特徴とする請求項1記載の半導体装置。 - 前記半導体層が、インジウム(In)元素、ガリウム(Ga)元素、亜鉛(Zn)元素および酸素元素を含む膜(In−Ga−Zn−O)、亜鉛(Zn)元素および酸素元素を含む膜(Zn−O)、亜鉛(Zn)元素、すず(Sn)元素および酸素元素を含む膜(Zn−Sn−O)、インジウム(In)元素および酸素元素を含む膜(In−O)、ガリウム(Ga)元素および酸素元素を含む膜(Ga−O)、インジウム(In)元素、すず(Sn)元素および酸素元素を含む膜(In−Sn−O)、すず(Sn)元素および酸素元素を含む膜(Sn−O)、インジウム(In)元素、亜鉛(Zn)元素および酸素元素を含む膜(In−Zn−O)、ガリウム(Ga)元素、亜鉛(Zn)元素および酸素元素を含む膜(Ga−Zn−O)、インジウム(In)元素、ガリウム(Ga)元素および酸素元素を含む膜(In−Ga−O)、アルミニウム(Al)元素、亜鉛(Zn)元素および酸素元素を含む膜(Al−Zn−O)から選択されるいずれかの膜である
ことを特徴とする請求項1記載の半導体装置。 - 基板上にゲート絶縁膜を介してゲート電極と半導体層が配置され、前記半導体層に接続してソース電極とドレイン電極とが配置される薄膜トランジスタを2つ以上含み、
少なくとも第一の薄膜トランジスタにおいて、前記半導体層は前記ソース電極と前記ドレイン電極を結ぶ電流経路中に、前記基板面に対して垂直な方向について、前記ゲート電極と前記ソース電極と前記ドレイン電極のいずれとも重ならず、かつ、前記ドレイン電極と電気的に接続される第1のオフセット領域を有し、
少なくとも第二の薄膜トランジスタにおいて、前記半導体層は基板面に対して垂直な方向について、前記ゲート電極と前記ソース電極により挟まれる第1の重なり領域と前記ゲート電極と前記ドレイン電極により挟まれる第2の重なり領域を有し、
前記第一の薄膜トランジスタの前記ゲート電極と前記ドレイン電極が電源線に接続され、前記第二の薄膜トランジスタの前記ドレイン電極が前記第一の薄膜トランジスタの前記ソース電極に接続され、
前記第二の薄膜トランジスタの前記ゲート電極が入力端子に接続され、前記第一の薄膜トランジスタの前記ソース電極及び前記第二の薄膜トランジスタの前記ドレイン電極が出力端子に接続される論理ゲートを含む
ことを特徴とする半導体装置。 - 前記第一の薄膜トランジスタは、前記半導体層内の前記ソース電極と前記ドレイン電極を結ぶ電流経路中に前記ゲート電極と前記ソース電極と前記ドレイン電極のいずれとも重ならず、かつ、前記ソース電極と電気的に接続される第2のオフセット領域を更に有する
ことを特徴とする請求項6記載の半導体装置。 - 前記ゲート電極が前記半導体層よりも前記基板に近い側に配置され、
前記ソース電極および前記ドレイン電極が前記半導体層よりも前記基板から遠い側に配置される
ことを特徴とする請求項6記載の半導体装置。 - 前記半導体層が金属酸化物材料よりなる
ことを特徴とする請求項6記載の半導体装置。 - 前記半導体層がIn、Ga、Zn、Sn、Alのいずれか、または複数を含有する金属酸化物材料よりなることを特徴とする請求項6記載の半導体装置。
- 前記半導体層が、インジウム(In)元素、ガリウム(Ga)元素、亜鉛(Zn)元素および酸素元素を含む膜(In−Ga−Zn−O)、亜鉛(Zn)元素および酸素元素を含む膜(Zn−O)、亜鉛(Zn)元素、すず(Sn)元素および酸素元素を含む膜(Zn−Sn−O)、インジウム(In)元素および酸素元素を含む膜(In−O)、ガリウム(Ga)元素および酸素元素を含む膜(Ga−O)、インジウム(In)元素、すず(Sn)元素および酸素元素を含む膜(In−Sn−O)、すず(Sn)元素および酸素元素を含む膜(Sn−O)、インジウム(In)元素、亜鉛(Zn)元素および酸素元素を含む膜(In−Zn−O)、ガリウム(Ga)元素、亜鉛(Zn)元素および酸素元素を含む膜(Ga−Zn−O)、インジウム(In)元素、ガリウム(Ga)元素および酸素元素を含む膜(In−Ga−O)、アルミニウム(Al)元素、亜鉛(Zn)元素および酸素元素を含む膜(Al−Zn−O)から選択されるいずれかの膜である
ことを特徴とする請求項6記載の半導体装置。
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